JP4793618B2 - Cmosイメージセンサ構造体及びこれを用いたカメラモジュールを製作する為のプロセス - Google Patents
Cmosイメージセンサ構造体及びこれを用いたカメラモジュールを製作する為のプロセス Download PDFInfo
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- JP4793618B2 JP4793618B2 JP2003293248A JP2003293248A JP4793618B2 JP 4793618 B2 JP4793618 B2 JP 4793618B2 JP 2003293248 A JP2003293248 A JP 2003293248A JP 2003293248 A JP2003293248 A JP 2003293248A JP 4793618 B2 JP4793618 B2 JP 4793618B2
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- 238000000034 method Methods 0.000 title claims description 34
- 238000004519 manufacturing process Methods 0.000 title description 21
- 125000006850 spacer group Chemical group 0.000 claims description 76
- 239000000463 material Substances 0.000 claims description 16
- 238000003491 array Methods 0.000 claims description 14
- 238000005520 cutting process Methods 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 6
- 238000000206 photolithography Methods 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 description 15
- 238000000576 coating method Methods 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
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- 238000003384 imaging method Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 230000008901 benefit Effects 0.000 description 4
- 238000011109 contamination Methods 0.000 description 4
- 229920001690 polydopamine Polymers 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000000712 assembly Effects 0.000 description 3
- 238000000429 assembly Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000006117 anti-reflective coating Substances 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000001444 catalytic combustion detection Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/64—Heating using microwaves
- H05B6/80—Apparatus for specific applications
- H05B6/806—Apparatus for specific applications for laboratory use
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- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Clinical Laboratory Science (AREA)
- General Health & Medical Sciences (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Lens Barrels (AREA)
Description
120 画素センサ
130、230 マイクロレンズ
135 ギャップ
140 支持部
150 スペーサープレート
160 屈折率勾配レンズ
Claims (9)
- 基板中及び基板上に形成された画素センサのアレイと、
該基板に取り付けられ、該画素センサのアレイ上に横たわるスペーサープレートと、
該スペーサープレート上にあり、前記スペーサープレート上の材料層に対するフォトリソグラフィによって前記画素センサのアレイの平面上に全体にわたって画像を形成するように配置されたファーフィールド・レンズとしての屈折率勾配レンズとを含んでなる構造体。 - 前記画素センサのアレイと前記スペーサープレートとの間にマイクロレンズアレイを更に含む請求項1に記載の構造体。
- 前記マイクロレンズアレイが屈折率勾配レンズのアレイを含み、前記スペーサープレートが前記屈折率勾配レンズのアレイに取り付けられている請求項2に記載の構造体。
- 前記画素センサのアレイ及び前記マイクロレンズアレイを取り囲む支持部を更に含み、
前記スペーサープレートが該支持部に取り付けられていることによって前記マイクロレンズアレイと前記スペーサープレートとの間に間隙が設けられている請求項2に記載の構造体。 - 前記基板が画素センサの複数のアレイを含むウエハであり、前記スペーサープレートが前記複数のアレイにわたって伸びている請求項1から4のいずれかに記載の構造体。
- 画素センサの複数のアレイをウエハ上に形成するステップと、
前記画素センサのアレイ上で、前記ウエハにスペーサープレートを取り付けるステップと、
前記ウエハの切断に先立って前記画素センサの複数の前記アレイの各々に対応するように前記スペーサープレート上の材料層に対するフォトリソグラフィによって前記スペーサープレート上に複数の屈折率勾配レンズを形成するステップであって、該屈折率勾配レンズの各々が、前記画素センサのアレイの1つに対応し前記画素センサのアレイ上にあり、前記画素センサのアレイの平面上に対応する領域にわたる画像を形成するファーフィールド・レンズであるステップと、
前記ウエハを切断して、1つの前記画素センサのアレイと1つの前記屈折率勾配レンズとを含む各カメラモジュールに分離するステップとを含んでなる、カメラモジュールを製作する方法。 - 前記画素センサの前記複数のアレイを前記ウエハ上に形成する前記ステップの後に、前記画素センサの前記複数のアレイの上にマイクロレンズのアレイを複数形成するステップを更に含み、該マイクロレンズが対応する画素センサ上へと光を収束するものである請求項6に記載の方法。
- 前記スペーサープレートを取り付けるステップが、前記スペーサープレートを前記マイクロレンズのアレイを構成する屈折率勾配レンズに取り付けるものである請求項7に記載の方法。
- 複数の支持部を形成するステップを更に含み、該支持部の各々が、マイクロレンズアレイの対応する1つを取り囲んでおり、前記スペーサープレートを取り付けるステップが、
前記スペーサープレートを前記支持部に取り付けることによって前記マイクロレンズアレイと前記スペーサープレートとの間に間隙が設けられるものである請求項7に記載の方法。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US40341102P | 2002-08-13 | 2002-08-13 | |
US60/403411 | 2002-08-13 | ||
US10/260,186 US7414661B2 (en) | 2002-08-13 | 2002-09-27 | CMOS image sensor using gradient index chip scale lenses |
US10/260186 | 2002-09-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2004080039A JP2004080039A (ja) | 2004-03-11 |
JP4793618B2 true JP4793618B2 (ja) | 2011-10-12 |
Family
ID=30772599
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003293248A Expired - Fee Related JP4793618B2 (ja) | 2002-08-13 | 2003-08-13 | Cmosイメージセンサ構造体及びこれを用いたカメラモジュールを製作する為のプロセス |
Country Status (4)
Country | Link |
---|---|
US (2) | US7414661B2 (ja) |
EP (1) | EP1389804B1 (ja) |
JP (1) | JP4793618B2 (ja) |
DE (1) | DE60335591D1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015095546A (ja) * | 2013-11-12 | 2015-05-18 | 株式会社リコー | 撮像素子パッケージ及び撮像装置 |
Families Citing this family (40)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7535509B2 (en) * | 2003-08-22 | 2009-05-19 | Konica Minolta Opto, Inc. | Transparent member in a solid-state image pick-up apparatus supported through use of micro-lenses larger in size than pixel micro-lenses and a method for producing the micro-lenses and transparent member |
GB0401462D0 (en) * | 2004-01-23 | 2004-02-25 | Melexis Nv | Digital imaging device |
EP1569276A1 (en) * | 2004-02-27 | 2005-08-31 | Heptagon OY | Micro-optics on optoelectronics |
DE102004013850B4 (de) * | 2004-03-20 | 2006-12-21 | Robert Bosch Gmbh | Filterchip mit integrierter Blende |
JP2005347416A (ja) * | 2004-06-01 | 2005-12-15 | Sharp Corp | 固体撮像装置、半導体ウエハ及びカメラモジュール |
JP4838501B2 (ja) * | 2004-06-15 | 2011-12-14 | 富士通セミコンダクター株式会社 | 撮像装置及びその製造方法 |
JP2007033597A (ja) * | 2005-07-25 | 2007-02-08 | Seiko Epson Corp | 光学シート、バックライトユニット、電気光学装置及び電子機器、並びに光学シートの製造方法及び光学シートの切断方法 |
JP2007142058A (ja) * | 2005-11-17 | 2007-06-07 | Matsushita Electric Ind Co Ltd | 半導体撮像素子およびその製造方法並びに半導体撮像装置とその製造方法 |
US7608875B2 (en) * | 2005-11-30 | 2009-10-27 | Aptina Imaging Corporation | Method and apparatus for blocking light to peripheral circuitry of an imager device |
KR101176777B1 (ko) * | 2006-02-26 | 2012-08-23 | 팸텍주식회사 | 콤펙트 카메라 모듈용 핸들러의 자동초점 조정 장치 |
JP2007288755A (ja) * | 2006-04-14 | 2007-11-01 | Optopac Co Ltd | カメラモジュール |
KR100871564B1 (ko) * | 2006-06-19 | 2008-12-02 | 삼성전기주식회사 | 카메라 모듈 |
EP1944808A1 (fr) * | 2007-01-15 | 2008-07-16 | Stmicroelectronics Sa | Module optique imageur destiné à être associé à un composant semi-conducteur optique et procédé pour sa fabrication. |
US8650030B2 (en) | 2007-04-02 | 2014-02-11 | Google Inc. | Location based responses to telephone requests |
CN101730863B (zh) * | 2007-04-24 | 2011-12-28 | 弗莱克斯电子有限责任公司 | 相机模块及其制造方法 |
US7825985B2 (en) | 2007-07-19 | 2010-11-02 | Flextronics Ap, Llc | Camera module back-focal length adjustment method and ultra compact components packaging |
US7732244B2 (en) * | 2007-12-20 | 2010-06-08 | Visera Technologies Company Limited | Method for forming light-transmitting regions |
US9118825B2 (en) * | 2008-02-22 | 2015-08-25 | Nan Chang O-Film Optoelectronics Technology Ltd. | Attachment of wafer level optics |
US7888758B2 (en) | 2008-03-12 | 2011-02-15 | Aptina Imaging Corporation | Method of forming a permanent carrier and spacer wafer for wafer level optics and associated structure |
FR2930372B1 (fr) * | 2008-04-18 | 2011-05-27 | St Microelectronics Sa | Element et module optique imageur pour composant semi-conducteur optique, procede pour le traitement d'un element optique imageur et appareil de captation d'images |
KR100945448B1 (ko) | 2008-05-06 | 2010-03-05 | 삼성전기주식회사 | 웨이퍼 레벨 카메라 모듈의 디포커스 보정방법 |
US7710667B2 (en) | 2008-06-25 | 2010-05-04 | Aptina Imaging Corp. | Imaging module with symmetrical lens system and method of manufacture |
US8048708B2 (en) | 2008-06-25 | 2011-11-01 | Micron Technology, Inc. | Method and apparatus providing an imager module with a permanent carrier |
US7773317B2 (en) | 2008-07-01 | 2010-08-10 | Aptina Imaging Corp. | Lens system with symmetrical optics |
KR101445185B1 (ko) * | 2008-07-10 | 2014-09-30 | 삼성전자주식회사 | 복수 개의 영상촬영유닛을 구비한 플렉시블 영상촬영장치및 그 제조방법 |
JP5329903B2 (ja) * | 2008-10-15 | 2013-10-30 | オリンパス株式会社 | 固体撮像装置、固体撮像装置の製造方法 |
JP4560121B2 (ja) | 2008-12-17 | 2010-10-13 | 株式会社東芝 | センサー固定装置およびカメラモジュール |
US20100238346A1 (en) * | 2009-03-17 | 2010-09-23 | Hong Kong Applied Science And Technology Research Institute Co. Ltd. | Compact imaging device |
WO2010129039A1 (en) | 2009-05-05 | 2010-11-11 | Tessera Technologies Hungary Kft. | Folded optic, camera system including the same, and associated methods |
US9419032B2 (en) | 2009-08-14 | 2016-08-16 | Nanchang O-Film Optoelectronics Technology Ltd | Wafer level camera module with molded housing and method of manufacturing |
US8885257B2 (en) | 2009-10-20 | 2014-11-11 | Flir Systems Trading Belgium Bvba | Focus compensation for optical elements and applications thereof |
CN102668082B (zh) * | 2009-10-20 | 2015-09-30 | Flir系统贸易比利时有限公司 | 用于光学元件的聚焦补偿及其应用 |
WO2012161802A2 (en) | 2011-02-24 | 2012-11-29 | Flextronics Ap, Llc | Autofocus camera module packaging with circuitry-integrated actuator system |
US8545114B2 (en) | 2011-03-11 | 2013-10-01 | Digitaloptics Corporation | Auto focus-zoom actuator or camera module contamination reduction feature with integrated protective membrane |
JP2013109011A (ja) * | 2011-11-17 | 2013-06-06 | Toshiba Corp | カメラモジュール |
US8953083B2 (en) | 2012-02-13 | 2015-02-10 | Apple Inc. | Housing camera lens cover using GRIN technology |
KR102055840B1 (ko) | 2014-02-20 | 2019-12-17 | 삼성전자 주식회사 | 이미지 센서 패키지 |
US10638055B2 (en) * | 2018-01-15 | 2020-04-28 | Qualcomm Incorporated | Aperture simulation |
US10924667B2 (en) * | 2018-10-04 | 2021-02-16 | Samsung Electronics Co., Ltd. | Image sensor and image sensing method |
US11375092B2 (en) | 2018-10-04 | 2022-06-28 | Samsung Electronics Co., Ltd. | Image sensor and image sensing method |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6150479A (ja) * | 1984-08-20 | 1986-03-12 | Fuji Photo Film Co Ltd | 固体撮像装置 |
JPH06260623A (ja) * | 1993-03-04 | 1994-09-16 | Nitto Denko Corp | 固体撮像素子及びその撮像装置 |
JPH08116042A (ja) * | 1994-10-18 | 1996-05-07 | Olympus Optical Co Ltd | 固体撮像装置及びその製造方法 |
JP3932565B2 (ja) * | 1995-11-06 | 2007-06-20 | コニカミノルタホールディングス株式会社 | 撮像装置 |
JPH10177643A (ja) * | 1996-12-14 | 1998-06-30 | Ricoh Co Ltd | 画像入力装置 |
TW396645B (en) * | 1998-06-16 | 2000-07-01 | United Microelectronics Corp | Manufacturing method of CMOS sensor devices |
JP2000031445A (ja) | 1998-07-08 | 2000-01-28 | Olympus Optical Co Ltd | 固体撮像モジュール |
JP2000323692A (ja) | 1999-05-07 | 2000-11-24 | Canon Inc | 固体撮像装置 |
US6285064B1 (en) * | 2000-03-28 | 2001-09-04 | Omnivision Technologies, Inc. | Chip scale packaging technique for optical image sensing integrated circuits |
JP2001351997A (ja) | 2000-06-09 | 2001-12-21 | Canon Inc | 受光センサーの実装構造体およびその使用方法 |
US20040012698A1 (en) | 2001-03-05 | 2004-01-22 | Yasuo Suda | Image pickup model and image pickup device |
US6744109B2 (en) * | 2002-06-26 | 2004-06-01 | Agilent Technologies, Inc. | Glass attachment over micro-lens arrays |
-
2002
- 2002-09-27 US US10/260,186 patent/US7414661B2/en active Active
-
2003
- 2003-04-04 DE DE60335591T patent/DE60335591D1/de not_active Expired - Lifetime
- 2003-04-04 EP EP03007806A patent/EP1389804B1/en not_active Expired - Lifetime
- 2003-08-13 JP JP2003293248A patent/JP4793618B2/ja not_active Expired - Fee Related
-
2008
- 2008-07-31 US US12/183,633 patent/US7683961B2/en not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015095546A (ja) * | 2013-11-12 | 2015-05-18 | 株式会社リコー | 撮像素子パッケージ及び撮像装置 |
Also Published As
Publication number | Publication date |
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US7414661B2 (en) | 2008-08-19 |
US20080283730A1 (en) | 2008-11-20 |
EP1389804B1 (en) | 2011-01-05 |
DE60335591D1 (de) | 2011-02-17 |
EP1389804A3 (en) | 2006-01-11 |
JP2004080039A (ja) | 2004-03-11 |
EP1389804A2 (en) | 2004-02-18 |
US20040032523A1 (en) | 2004-02-19 |
US7683961B2 (en) | 2010-03-23 |
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