CN101677096B - 半导体器件 - Google Patents

半导体器件 Download PDF

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Publication number
CN101677096B
CN101677096B CN2009101461061A CN200910146106A CN101677096B CN 101677096 B CN101677096 B CN 101677096B CN 2009101461061 A CN2009101461061 A CN 2009101461061A CN 200910146106 A CN200910146106 A CN 200910146106A CN 101677096 B CN101677096 B CN 101677096B
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mentioned
pad
semiconductor chip
pads
limit
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Chinese (zh)
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CN101677096A (zh
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小松干彦
日高隆雄
木村纯子
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Renesas Electronics Corp
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Renesas Technology Corp
Renesas Electronics Corp
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Priority to CN201310353788.XA priority Critical patent/CN103794591B/zh
Publication of CN101677096A publication Critical patent/CN101677096A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H—ELECTRICITY
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/464—Additional interconnections in combination with leadframes
    • H10W70/465—Bumps or wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/129—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed forming a chip-scale package [CSP]
    • H—ELECTRICITY
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    • H10W90/00—Package configurations
    • H10W90/811—Multiple chips on leadframes
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F1/00—Details not covered by groups G06F3/00 - G06F13/00 and G06F21/00
    • G06F1/26—Power supply means, e.g. regulation thereof
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H10W44/203—Electrical connections
    • H10W44/206—Wires
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07531—Techniques
    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
    • H10W72/07533—Ultrasonic bonding, e.g. thermosonic bonding
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    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07554—Controlling the environment, e.g. atmosphere composition or temperature changes in dispositions
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    • H10W72/00—Interconnections or connectors in packages
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    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
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    • H10W72/00—Interconnections or connectors in packages
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    • H10W72/531—Shapes of wire connectors
    • H10W72/5366—Shapes of wire connectors the bond wires having kinks
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5473—Dispositions of multiple bond wires multiple bond wires connected to a common bond pad
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H10W72/5475—Dispositions of multiple bond wires multiple bond wires connected to common bond pads at both ends of the wires
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
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    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/926—Multiple bond pads having different sizes
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    • H10W72/00—Interconnections or connectors in packages
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    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
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    • H10W72/00—Interconnections or connectors in packages
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    • H10W72/934—Cross-sectional shape, i.e. in side view
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    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
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    • H10W72/90—Bond pads, in general
    • H10W72/981—Auxiliary members, e.g. spacers
    • H10W72/983—Reinforcing structures, e.g. collars
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    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips
    • H10W90/24—Configurations of stacked chips at least one of the stacked chips being laterally offset from a neighbouring stacked chip, e.g. chip stacks having a staircase shape
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    • H10W90/00—Package configurations
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    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/732—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between stacked chips
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    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
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    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/752—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between stacked chips
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    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/753—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between laterally-adjacent chips
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

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  • Semiconductor Integrated Circuits (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Control Of Electrical Variables (AREA)
CN2009101461061A 2008-09-19 2009-06-12 半导体器件 Active CN101677096B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201310353788.XA CN103794591B (zh) 2008-09-19 2009-06-12 半导体器件

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008240825 2008-09-19
JP2008-240825 2008-09-19
JP2008240825A JP5405785B2 (ja) 2008-09-19 2008-09-19 半導体装置

Related Child Applications (2)

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CN201310353825.7A Division CN103400818B (zh) 2008-09-19 2009-06-12 半导体器件
CN201310353788.XA Division CN103794591B (zh) 2008-09-19 2009-06-12 半导体器件

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CN101677096A CN101677096A (zh) 2010-03-24
CN101677096B true CN101677096B (zh) 2013-09-11

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CN201310353788.XA Active CN103794591B (zh) 2008-09-19 2009-06-12 半导体器件
CN201310353825.7A Active CN103400818B (zh) 2008-09-19 2009-06-12 半导体器件

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CN201310353825.7A Active CN103400818B (zh) 2008-09-19 2009-06-12 半导体器件

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US (4) US8134228B2 (https=)
JP (2) JP5405785B2 (https=)
CN (3) CN101677096B (https=)
TW (3) TWI581393B (https=)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5405785B2 (ja) * 2008-09-19 2014-02-05 ルネサスエレクトロニクス株式会社 半導体装置
JP5448727B2 (ja) * 2009-11-05 2014-03-19 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
US9048112B2 (en) * 2010-06-29 2015-06-02 Qualcomm Incorporated Integrated voltage regulator with embedded passive device(s) for a stacked IC
KR101695770B1 (ko) * 2010-07-02 2017-01-13 삼성전자주식회사 회전 적층 구조를 갖는 반도체 패키지
FR2966982B1 (fr) * 2010-10-27 2012-12-07 St Microelectronics Sa Ligne de transmission pour circuits electroniques
US8686537B2 (en) 2011-03-03 2014-04-01 Skyworks Solutions, Inc. Apparatus and methods for reducing impact of high RF loss plating
US8889995B2 (en) 2011-03-03 2014-11-18 Skyworks Solutions, Inc. Wire bond pad system and method
US9402319B2 (en) * 2011-05-11 2016-07-26 Vlt, Inc. Panel-molded electronic assemblies
WO2013018674A1 (ja) * 2011-08-01 2013-02-07 株式会社村田製作所 高周波モジュール
US9679869B2 (en) 2011-09-02 2017-06-13 Skyworks Solutions, Inc. Transmission line for high performance radio frequency applications
JP5743922B2 (ja) * 2012-02-21 2015-07-01 日立オートモティブシステムズ株式会社 熱式空気流量測定装置
JP6051542B2 (ja) * 2012-03-07 2016-12-27 ミツミ電機株式会社 電池電圧監視回路
JP5893800B2 (ja) 2012-06-14 2016-03-23 スカイワークス ソリューションズ, インコーポレイテッドSkyworks Solutions, Inc. パワーアンプモジュールを含む関連するシステム、デバイス、および方法
JP5968713B2 (ja) * 2012-07-30 2016-08-10 ルネサスエレクトロニクス株式会社 半導体装置
EP2899556B1 (en) * 2012-09-10 2018-12-19 Renesas Electronics Corporation Semiconductor device and battery voltage monitoring device
JP6063713B2 (ja) 2012-11-08 2017-01-18 ルネサスエレクトロニクス株式会社 電池保護システム
KR101350388B1 (ko) 2012-11-22 2014-01-15 숭실대학교산학협력단 적층 구조를 가지는 집적회로
CN103750834A (zh) * 2014-02-13 2014-04-30 重庆海睿科技有限公司 一种心电信号采集线
US9557755B2 (en) * 2014-06-13 2017-01-31 Gn Resound A/S Interface circuit for a hearing aid and method
US9875963B2 (en) * 2014-12-19 2018-01-23 Toshiba Memory Corporation Semiconductor device
US9967984B1 (en) 2015-01-14 2018-05-08 Vlt, Inc. Power adapter packaging
US9666509B2 (en) * 2015-01-16 2017-05-30 New Japan Radio Co., Ltd. Semiconductor device
WO2016117072A1 (ja) * 2015-01-22 2016-07-28 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US9589946B2 (en) * 2015-04-28 2017-03-07 Kabushiki Kaisha Toshiba Chip with a bump connected to a plurality of wirings
US10264664B1 (en) 2015-06-04 2019-04-16 Vlt, Inc. Method of electrically interconnecting circuit assemblies
JP6515724B2 (ja) * 2015-07-31 2019-05-22 富士通株式会社 半導体装置
JP6771870B2 (ja) * 2015-08-31 2020-10-21 三菱電機株式会社 点灯装置および照明装置
JP6753042B2 (ja) * 2015-08-31 2020-09-09 三菱電機株式会社 点灯装置、点灯制御ｉｃおよび照明装置
US10158357B1 (en) 2016-04-05 2018-12-18 Vlt, Inc. Method and apparatus for delivering power to semiconductors
US10903734B1 (en) 2016-04-05 2021-01-26 Vicor Corporation Delivering power to semiconductor loads
US11336167B1 (en) 2016-04-05 2022-05-17 Vicor Corporation Delivering power to semiconductor loads
TWI652790B (zh) 2016-10-19 2019-03-01 Upi Semiconductor Corp. 瞬間電壓抑制器裝置
TWI637476B (zh) * 2017-02-14 2018-10-01 Lyontek Inc. 雙晶片封裝結構
CN108511427A (zh) * 2017-02-24 2018-09-07 来扬科技股份有限公司 双芯片封装结构
TWI631681B (zh) * 2017-12-15 2018-08-01 Lyontek Inc. 雙晶片封裝結構
JP6606236B2 (ja) * 2018-08-02 2019-11-13 ラピスセミコンダクタ株式会社 半導体チップ
JP7243845B2 (ja) 2019-09-25 2023-03-22 富士電機株式会社 半導体装置
CN112309995B (zh) * 2019-10-30 2023-05-30 成都华微电子科技股份有限公司 电压调整器陶瓷管壳、封装结构及其制造方法
KR102817225B1 (ko) * 2020-02-13 2025-06-05 에스케이하이닉스 주식회사 점대칭 구조의 칩 패드를 구비하는 반도체 칩을 포함하는 반도체 패키지
JP7413102B2 (ja) 2020-03-17 2024-01-15 キオクシア株式会社 半導体装置
TWI749580B (zh) * 2020-06-08 2021-12-11 星河半導體股份有限公司 多通道天線晶片測試系統及方法
US11289437B1 (en) * 2020-10-28 2022-03-29 Renesas Electronics Corporation Semiconductor device
JP7562234B2 (ja) 2021-01-26 2024-10-07 エイブリック株式会社 半導体装置
CN116974322B (zh) * 2022-04-22 2026-01-23 创意电子股份有限公司 捕获电阻电压降的分析器以及其分析方法
JP2024066619A (ja) * 2022-11-02 2024-05-16 ローム株式会社 半導体回路および半導体装置
WO2025253958A1 (ja) * 2024-06-04 2025-12-11 ソニーセミコンダクタソリューションズ株式会社 半導体装置
DE102024208095A1 (de) 2024-08-26 2026-02-26 Robert Bosch Gesellschaft mit beschränkter Haftung Elektronische Anordnung

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005183611A (ja) * 2003-12-18 2005-07-07 Matsushita Electric Ind Co Ltd マルチチップ型半導体装置

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6159762A (ja) * 1984-08-30 1986-03-27 Fujitsu Ltd 半導体装置
JPH0741607U (ja) * 1993-11-17 1995-07-21 富士通テン株式会社 電源回路
US5408127A (en) * 1994-03-21 1995-04-18 National Semiconductor Corporation Method of and arrangement for preventing bonding wire shorts with certain integrated circuit components
KR100192179B1 (ko) * 1996-03-06 1999-06-15 김영환 반도체 패키지
JP3732884B2 (ja) 1996-04-22 2006-01-11 株式会社ルネサステクノロジ 内部電源電圧発生回路、内部電圧発生回路および半導体装置
KR0179920B1 (ko) * 1996-05-17 1999-03-20 문정환 칩 사이즈 패키지의 제조방법
JP3311935B2 (ja) 1996-08-12 2002-08-05 株式会社東芝 半導体装置およびその計測方法
JP2001110184A (ja) * 1999-10-14 2001-04-20 Hitachi Ltd 半導体装置
JP2002026173A (ja) * 2000-07-10 2002-01-25 Fuji Photo Film Co Ltd Ｉｃ装置、基板、およびｉｃ組付基板
JP2002043504A (ja) 2000-07-27 2002-02-08 Sharp Corp 複合デバイス
JP2002124626A (ja) 2000-10-16 2002-04-26 Hitachi Ltd 半導体装置
CN100364088C (zh) * 2002-01-31 2008-01-23 迈克纳斯公司 可编程电子处理器件的装置
JP2003243435A (ja) * 2002-02-14 2003-08-29 Hitachi Ltd 半導体集積回路装置の製造方法
JP2004128329A (ja) 2002-10-04 2004-04-22 Rohm Co Ltd 電圧帰還回路を有する半導体装置及びそれを用いた電子装置
KR100594872B1 (ko) * 2002-10-04 2006-06-30 롬 씨오.엘티디 전압귀환회로를 갖는 반도체 장치 및 이를 이용한 전자장치
JP4236448B2 (ja) 2002-11-15 2009-03-11 三洋電機株式会社 半導体集積回路
JP2007066922A (ja) * 2003-11-28 2007-03-15 Renesas Technology Corp 半導体集積回路装置
EP1544917A1 (en) * 2003-12-15 2005-06-22 Dialog Semiconductor GmbH Integrated battery pack with lead frame connection
US7154186B2 (en) * 2004-03-18 2006-12-26 Fairchild Semiconductor Corporation Multi-flip chip on lead frame on over molded IC package and method of assembly
JP2006073625A (ja) * 2004-08-31 2006-03-16 Sharp Corp 電子部品
US20060065962A1 (en) * 2004-09-29 2006-03-30 Intel Corporation Control circuitry in stacked silicon
JP4808979B2 (ja) * 2005-03-18 2011-11-02 株式会社リコー マルチチップ型半導体装置及びその製造方法
JP2006309312A (ja) * 2005-04-26 2006-11-09 Sharp Corp レギュレータ
US7368960B2 (en) * 2005-06-15 2008-05-06 Cypress Semiconductor Corp. Circuit and method for monitoring the integrity of a power supply
US8258607B2 (en) * 2005-10-19 2012-09-04 Avago Technologies General Ip (Singapore) Pte. Ltd. Apparatus and method for providing bypass capacitance and power routing in QFP package
JP2008004639A (ja) * 2006-06-20 2008-01-10 Toshiba Corp 半導体装置
JP2008060444A (ja) * 2006-09-01 2008-03-13 Seiko Epson Corp 集積回路装置
TW200814275A (en) * 2006-09-06 2008-03-16 Advanced Semiconductor Eng Chip carrier with a signal collection tape and manufacturing method thereof
JPWO2008084841A1 (ja) * 2007-01-11 2010-05-06 日本電気株式会社 半導体装置
JP4940064B2 (ja) * 2007-08-28 2012-05-30 ルネサスエレクトロニクス株式会社 半導体装置
US7676912B2 (en) * 2007-09-05 2010-03-16 Headway Technologies, Inc. Method of manufacturing electronic component package
JP5405785B2 (ja) * 2008-09-19 2014-02-05 ルネサスエレクトロニクス株式会社 半導体装置
JP5407667B2 (ja) * 2008-11-05 2014-02-05 株式会社村田製作所 半導体装置
JP5335931B2 (ja) * 2008-12-26 2013-11-06 メギカ・コーポレイション 電力管理集積回路を有するチップ・パッケージおよび関連技術
JP5481161B2 (ja) * 2009-10-30 2014-04-23 ルネサスエレクトロニクス株式会社 半導体装置および電源装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005183611A (ja) * 2003-12-18 2005-07-07 Matsushita Electric Ind Co Ltd マルチチップ型半導体装置

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