CN101276740A - 一种形成极薄功率装置芯片的方法 - Google Patents
一种形成极薄功率装置芯片的方法 Download PDFInfo
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- CN101276740A CN101276740A CNA2008100870201A CN200810087020A CN101276740A CN 101276740 A CN101276740 A CN 101276740A CN A2008100870201 A CNA2008100870201 A CN A2008100870201A CN 200810087020 A CN200810087020 A CN 200810087020A CN 101276740 A CN101276740 A CN 101276740A
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3043—Making grooves, e.g. cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Dicing (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
Claims (23)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/694,888 | 2007-03-30 | ||
US11/694,888 US20080242052A1 (en) | 2007-03-30 | 2007-03-30 | Method of forming ultra thin chips of power devices |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101276740A true CN101276740A (zh) | 2008-10-01 |
CN101276740B CN101276740B (zh) | 2010-12-01 |
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Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008100870201A Active CN101276740B (zh) | 2007-03-30 | 2008-03-28 | 一种形成极薄功率装置芯片的方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20080242052A1 (zh) |
CN (1) | CN101276740B (zh) |
TW (1) | TWI423315B (zh) |
Cited By (18)
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CN101625972A (zh) * | 2008-07-11 | 2010-01-13 | 半导体元件工业有限责任公司 | 使半导体晶片变薄的方法 |
US7989318B2 (en) | 2008-12-08 | 2011-08-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for stacking semiconductor dies |
CN102403217A (zh) * | 2011-11-11 | 2012-04-04 | 华中科技大学 | 一种超薄芯片的制备方法 |
CN102097404B (zh) * | 2009-12-10 | 2013-09-11 | 万国半导体有限公司 | 低衬底电阻的晶圆级芯片尺寸封装及其制造方法 |
CN103681238A (zh) * | 2012-09-10 | 2014-03-26 | 拉碧斯半导体株式会社 | 半导体装置及半导体装置的制造方法 |
CN103811396A (zh) * | 2014-01-24 | 2014-05-21 | 南通富士通微电子股份有限公司 | 圆片封装工艺用治具 |
US8816491B2 (en) | 2009-01-13 | 2014-08-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Stacked integrated chips and methods of fabrication thereof |
CN104124176A (zh) * | 2013-04-24 | 2014-10-29 | 万国半导体股份有限公司 | 制备应用在倒装安装工艺上的半导体器件的方法 |
CN104170063A (zh) * | 2012-03-12 | 2014-11-26 | 三菱电机株式会社 | 真空吸附台、半导体晶片的切割方法以及退火方法 |
CN105428209A (zh) * | 2014-09-12 | 2016-03-23 | 英飞凌科技股份有限公司 | 半导体器件装置和用于形成半导体器件装置的方法 |
CN108022836A (zh) * | 2016-10-31 | 2018-05-11 | 中芯国际集成电路制造(上海)有限公司 | 一种多层堆叠晶圆的研磨方法 |
CN108022877A (zh) * | 2016-11-04 | 2018-05-11 | 株式会社迪思科 | 晶片的加工方法 |
CN109659253A (zh) * | 2017-10-11 | 2019-04-19 | 株式会社迪思科 | 板状物的分割装置 |
CN110133240A (zh) * | 2019-06-03 | 2019-08-16 | 杭州致爱包装制品有限公司 | 一种嵌入式生物芯片匣及其制作方法 |
CN110277345A (zh) * | 2019-05-15 | 2019-09-24 | 福建省福联集成电路有限公司 | 一种传感器的制造方法及传感器 |
CN113172778A (zh) * | 2021-04-28 | 2021-07-27 | 华虹半导体(无锡)有限公司 | 太鼓环去除方法及用于太鼓环去除的定位装置 |
CN113732525A (zh) * | 2021-09-03 | 2021-12-03 | 湖北三维半导体集成创新中心有限责任公司 | 一种晶圆的切割方法 |
CN114242835A (zh) * | 2021-12-08 | 2022-03-25 | 西南技术物理研究所 | 一种用于硅基光敏芯片减薄的方法 |
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US20060145312A1 (en) * | 2005-01-05 | 2006-07-06 | Kai Liu | Dual flat non-leaded semiconductor package |
US7884454B2 (en) | 2005-01-05 | 2011-02-08 | Alpha & Omega Semiconductor, Ltd | Use of discrete conductive layer in semiconductor device to re-route bonding wires for semiconductor device package |
US7898092B2 (en) * | 2007-11-21 | 2011-03-01 | Alpha & Omega Semiconductor, | Stacked-die package for battery power management |
JP4927484B2 (ja) * | 2006-09-13 | 2012-05-09 | 株式会社ディスコ | 積層用デバイスの製造方法 |
US7678667B2 (en) * | 2007-06-20 | 2010-03-16 | Silverbrook Research Pty Ltd | Method of bonding MEMS integrated circuits |
US20080318413A1 (en) * | 2007-06-21 | 2008-12-25 | General Electric Company | Method for making an interconnect structure and interconnect component recovery process |
JP2010016116A (ja) * | 2008-07-02 | 2010-01-21 | Disco Abrasive Syst Ltd | 半導体デバイスの製造方法 |
US8062958B2 (en) * | 2009-04-01 | 2011-11-22 | Micron Technology, Inc. | Microelectronic device wafers and methods of manufacturing |
US9257375B2 (en) | 2009-07-31 | 2016-02-09 | Alpha and Omega Semiconductor Inc. | Multi-die semiconductor package |
US8164199B2 (en) | 2009-07-31 | 2012-04-24 | Alpha and Omega Semiconductor Incorporation | Multi-die package |
JP5641766B2 (ja) * | 2010-04-22 | 2014-12-17 | 株式会社ディスコ | ウェーハの分割方法 |
JP5686551B2 (ja) * | 2010-08-31 | 2015-03-18 | 株式会社ディスコ | ウエーハの加工方法 |
JP5755043B2 (ja) * | 2011-06-20 | 2015-07-29 | 株式会社ディスコ | 半導体ウエーハの加工方法 |
CN102842556B (zh) * | 2011-06-21 | 2015-04-22 | 万国半导体(开曼)股份有限公司 | 双面外露的半导体器件及其制作方法 |
US8450152B2 (en) * | 2011-07-28 | 2013-05-28 | Alpha & Omega Semiconductor, Inc. | Double-side exposed semiconductor device and its manufacturing method |
US8785296B2 (en) * | 2012-02-14 | 2014-07-22 | Alpha & Omega Semiconductor, Inc. | Packaging method with backside wafer dicing |
US9418876B2 (en) * | 2011-09-02 | 2016-08-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of three dimensional integrated circuit assembly |
US9245773B2 (en) | 2011-09-02 | 2016-01-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device packaging methods and structures thereof |
JP5868081B2 (ja) * | 2011-09-05 | 2016-02-24 | 株式会社ディスコ | 加工装置 |
JP5981154B2 (ja) * | 2012-02-02 | 2016-08-31 | 三菱電機株式会社 | 半導体装置の製造方法 |
US8716067B2 (en) * | 2012-02-20 | 2014-05-06 | Ixys Corporation | Power device manufacture on the recessed side of a thinned wafer |
JP2013187272A (ja) * | 2012-03-07 | 2013-09-19 | Disco Abrasive Syst Ltd | 加工方法 |
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US11361970B2 (en) | 2017-08-17 | 2022-06-14 | Semiconductor Components Industries, Llc | Silicon-on-insulator die support structures and related methods |
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FR3085575B1 (fr) | 2018-09-03 | 2021-06-18 | St Microelectronics Tours Sas | Boitier de puce electronique |
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FR3093230B1 (fr) * | 2019-02-27 | 2023-01-06 | St Microelectronics Tours Sas | Boîtier de puce électronique |
US20210013176A1 (en) * | 2019-07-09 | 2021-01-14 | Semiconductor Components Industries, Llc | Pre-stacking mechanical strength enhancement of power device structures |
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JP4462997B2 (ja) * | 2003-09-26 | 2010-05-12 | 株式会社ディスコ | ウェーハの加工方法 |
US6861336B1 (en) * | 2003-11-30 | 2005-03-01 | Union Semiconductor Technology Corporation | Die thinning methods |
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JP4741332B2 (ja) * | 2005-09-30 | 2011-08-03 | 株式会社ディスコ | ウエーハの加工方法 |
JP5111938B2 (ja) * | 2007-05-25 | 2013-01-09 | 日東電工株式会社 | 半導体ウエハの保持方法 |
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2007
- 2007-03-30 US US11/694,888 patent/US20080242052A1/en not_active Abandoned
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2008
- 2008-03-28 CN CN2008100870201A patent/CN101276740B/zh active Active
- 2008-03-31 TW TW097111794A patent/TWI423315B/zh active
Cited By (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101625972A (zh) * | 2008-07-11 | 2010-01-13 | 半导体元件工业有限责任公司 | 使半导体晶片变薄的方法 |
CN101625972B (zh) * | 2008-07-11 | 2014-07-23 | 半导体元件工业有限责任公司 | 使半导体晶片变薄的方法 |
US7989318B2 (en) | 2008-12-08 | 2011-08-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for stacking semiconductor dies |
CN101752238B (zh) * | 2008-12-08 | 2012-11-07 | 台湾积体电路制造股份有限公司 | 半导体元件的形成方法 |
US8362593B2 (en) | 2008-12-08 | 2013-01-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for stacking semiconductor dies |
US8629042B2 (en) | 2008-12-08 | 2014-01-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for stacking semiconductor dies |
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