TWI269379B - Back-grinding/dicing tape applying system - Google Patents

Back-grinding/dicing tape applying system Download PDF

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Publication number
TWI269379B
TWI269379B TW092118491A TW92118491A TWI269379B TW I269379 B TWI269379 B TW I269379B TW 092118491 A TW092118491 A TW 092118491A TW 92118491 A TW92118491 A TW 92118491A TW I269379 B TWI269379 B TW I269379B
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Taiwan
Prior art keywords
wafer
dicing tape
tape
dicing
cut
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TW092118491A
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Chinese (zh)
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TW200423243A (en
Inventor
Kazuo Kobayashi
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Tokyo Seimitsu Co Ltd
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Publication of TW200423243A publication Critical patent/TW200423243A/en
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Publication of TWI269379B publication Critical patent/TWI269379B/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling
    • H01L2221/68395—Separation by peeling using peeling wheel

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

A dicing tape applying apparatus, comprising a pre-cut dicing tape edge position detector detecting the edge of a pre-cut dicing tape and a cutter cutting a non-cut dicing tape into a desired shape when it is applied, and able to use both the non-cut dicing tape and the pre-cut dicing tape, has been disclosed.

Description

1269379 坎、發明說明： 【發明所屬之技術領域】 =發明係關於使用切晶帶之裝置，該裝置在一晶圓切割 ^丽在其背部使用一切晶帶，及使用背部研磨/切晶帶之系 流曰其包括··一背部研磨器，其藉由研磨一晶圓之背部使 Q又4，及一使用切晶帶之裝置，其向該變薄之晶圓 的背部使用一切晶帶。 【先别技術】 /在製造半導體中，在一晶圓表面上形成諸多晶片（晶粒） " 半$ 日日片而藉由一切晶程序（其中，將晶粒分離）及 、、’、口耘序（其中，將晶粒固定於一鉛制框架或類似結構上 並進行焊接）而完成。在該切晶程序中，可藉由一切晶裝置 在一晶圓之表面上的晶粒之間形成溝槽並使該等晶粒分離 。在该晶圓背部使用-切晶帶，以避免該等晶粒在分離過 程中散開。 圖1A與圖1B為顯示切晶前一晶圓的狀態之圖式，圖1 a為 頁視圖，而圖1B為一斷面圖。如圖所示，將一晶圓}配置 於一盤狀框架2内的一圓孔中，並將在該晶圓i與框架2的背 邰使用切晶帶3。一切晶裝置在晶粒之間會形成許多溝槽。 I成之溝槽使之到達切晶帶3，但即使晶圓切割成晶粒時， 由於其背部使用有切晶帶3，故該等晶粒不會散開。在某些 情況中，首先形成之該等溝槽使得該晶圓之一部分保留不 切割，隨後在該組合程序中將晶圓完全分離。在該組合程 序中，在該晶圓與該框架之間之部分切晶帶3展開（擴展狀 86500 1269379 態）時，執行一焊接程序，並逐一挑揀各晶圓，將6 -鉛制框架、一電路薄膜或類似結 、疋於 或類似牛,u狀 此日執行冷卻 ^ V ”’ ，以使垓等晶粒容易與該切晶帶3分離。 為在晶圓1與框架2的背部使用切晶帶3，使用一 :裝置。在該使用切晶帶裝置中，在該晶圓1的表面 木2的表面保留於臺面之狀態，將在該晶圓1與該框架2的北 度f於該框架的一切晶帶，使-切割Μ ^ 〇匡木上的该切晶帶接觸，並旋轉至將其切割成一圓形， 並在剝離該切晶帶後留下一圓形切晶帶。 最近，不是在如上述使用切晶帶之後進行切割，而是使 用已預先切割成一固定形狀並保留於一載膜上的切晶帶。 此處’預先切割成一固定形狀的切晶帶稱為預切割切晶帶 ，而預先亚未切割而待以後切割的的傳統切晶 割切晶帶。當使用預切割切晶帶時，，需要切割器= 須提供一機構，用於提供一具有一偵測器的預切割切晶帶 ，該偵測器偵測一預切割切晶帶的邊緣位置，並在該位置 相對於保持在固定位置的該晶圓及該框架對齊後，使用切 晶帶。 如上所述，在將已完成切晶程序之該晶圓上的各晶粒固 疋於一包裝（諸如一鉛架或用於下一組合程序中之電路的 薄膜）後，該晶粒的電極焊墊與該包裝的電極可藉由一焊線 或類似物連接。在向一晶粒背部或該包裝使用一黏合劑後 ，將該晶粒固定於該包裝。由於黏合劑具有流動性，其會 散佈至該包裝之該焊接表面的周邊及該晶粒的該等側面， 86500 1269379 固。由於該趣，會產生一問題，即該 月匕政佈至遠處不需要黏合的部 至p 4 卩刀。例如，若該黏合劑散佈 至“粒之表面’則該電極焊塾與該連接導線（如該 間的電性連接會受到不利影響。 X干"） 接Γ，需使用將該包裝固定於該晶粒之背部的-晶粒焊 接H帶被稱為晶粒黏„、晶粒焊接膜等等。通常 各晶粒係逐個黏合於晶粒焊接帶，但此情況下的效率不古 ’因r在該晶圓的背部使用由一切晶帶與一晶粒谭接； 互相烊接組成的一;f，並將該晶圓與該晶粒焊接帶—同切 割。在隨後的組合階段，在該晶粒焊接帶附著於背部狀能 下，將該晶粒從該切晶帶上剝離，並將其㈣於該包裝: 。該切晶帶使用—材料’該材料的黏合力與該晶粒焊接 所用材料的黏合力不同，因A，可在該晶粒焊接帶附著於 晶粒狀態下’將該晶粒從該切晶帶剝離’並將二帶以紫外 線照射、加熱、冷卻等等。該晶粒焊接帶可附著於該未切 割切晶帶與該預切割切晶帶上。1269379 kan, invention description: [Technical field of invention] = invention relates to a device using a dicing tape, which is used for cutting a wafer on a wafer, using a back crystal/cutting ribbon The system includes a back grinder that grinds the back of a wafer to make Q and 4, and a device that uses a dicing tape to use all of the crystal strips to the back of the thinned wafer. [Before Technology] /In the manufacture of semiconductors, a plurality of wafers (grains) are formed on the surface of a wafer, and a half-day film is formed by a crystal process (in which the crystal grains are separated) and , ', The sputum order (where the dies are fixed to a lead frame or the like and soldered) is completed. In the crystal cutting process, trenches are formed between the crystal grains on the surface of a wafer by all crystal devices and the crystal grains are separated. A dicing tape is used on the back of the wafer to prevent the grains from spreading during the separation process. 1A and 1B are views showing a state of a wafer before dicing, and Fig. 1a is a page view, and Fig. 1B is a cross-sectional view. As shown, a wafer} is disposed in a circular hole in a disk-shaped frame 2, and a dicing tape 3 is used in the backside of the wafer i and the frame 2. All crystal devices form many grooves between the grains. The groove formed by I reaches the dicing tape 3, but even if the wafer is cut into crystal grains, since the dicing tape 3 is used on the back, the crystal grains do not spread. In some cases, the trenches are first formed such that a portion of the wafer remains uncut, and then the wafer is completely separated in the assembly process. In the combination process, when a part of the dicing tape 3 between the wafer and the frame is unfolded (extended 86500 1269379 state), a welding process is performed, and each wafer is picked one by one, and a 6-lead frame, A circuit film or similar junction, tantalum or similar cow, u-shaped cooling ^ V ′′ is performed on this day, so that the crystal grains such as germanium are easily separated from the crystal cutting ribbon 3. For use on the back of the wafer 1 and the frame 2 The dicing tape 3 uses a device in which the surface of the surface of the wafer 1 remains on the mesa in the dicing tape device, and the wafer 1 and the north of the frame 2 are f. All the ribbons in the frame are brought into contact with the dicing tape on the Μ 〇匡 〇匡 , , , , , , , , , , , 接触 接触 接触 接触 接触 接触 接触 接触 接触 接触 接触 接触 接触 接触 接触 接触 接触 接触 接触 接触 接触 接触 接触 接触 接触Recently, instead of cutting after using the dicing tape as described above, a dicing tape which has been previously cut into a fixed shape and retained on a carrier film is used. Here, the dicing tape which is previously cut into a fixed shape is called Pre-cut dicing tape, while traditional dicing that is not sub-cut and is to be cut later Cutting ribbon. When using a pre-cut dicing tape, a cutter is required = a mechanism is required to provide a pre-cut dicing tape with a detector that detects a pre-cut dicing The edge position of the tape, and after the position is aligned with respect to the wafer and the frame held in a fixed position, a dicing tape is used. As described above, each grain on the wafer that has completed the dicing process is used. After being fixed in a package such as a lead frame or a film for a circuit in the next combination process, the electrode pads of the die and the electrodes of the package can be connected by a wire or the like. After a die back or the package uses an adhesive, the die is fixed to the package. Since the adhesive has fluidity, it spreads to the periphery of the soldering surface of the package and the sides of the die. 86500 1269379 Solid. Because of this interest, there is a problem that the part that does not need to be bonded to the distance in the month is to the p 4 file. For example, if the adhesive is spread to the surface of the grain, the electrode is welded.塾 with the connecting wire (such as the electrical connection between the two Defectively affected. X dry ") joints, the use of the package to fix the back of the die - the grain-welded H-band is called grain adhesion, grain soldering film, etc. Usually each grain Bonding to the die bond strip one by one, but in this case the efficiency is not good 'because r is used on the back of the wafer by all the crystal strips and a die tan; one of the mutually connected ones; f, and will The wafer is cut with the die bonding strip. In the subsequent combination stage, the die is peeled off from the dicing tape and the (4) is packaged in the package. : The dicing tape uses - the material 'the adhesive force of the material is different from the bonding force of the material used for the grain bonding, because A, the grain can be attached to the grain state The dicing strip is stripped' and the two strips are irradiated with ultraviolet light, heated, cooled, and the like. The die bond tape can be attached to the uncut dicing tape and the pre-cut dicing tape.

最近的趨勢之一為在可攜式裝置或卡上安裝半導體裝置 更加頻繁，因此使半導體晶片（晶粒）變得越來越薄。為此 ，切晶前，用一研磨器研磨一晶圓的背部。這稱為背部研 磨，用於背部研磨的裝置稱為背部研磨器。在該表面使用 一保護帶用於保護的狀態下，執行背部研磨。當對—晶圓 執行背部研磨時，會產生變形，其可藉由蝕刻移除，但Z 刻不能在使用了保護帶的狀態下執行，因此，應在保護帶 剝離後執行蝕刻。藉由背部研磨，該晶圓之厚度通常會Z 86500 1269379 得約小於1 5 Ο μηι。 最·近，取代月部研磨接办丨 ., 傻钱刻的方法，對一晶圓背部執行 抛光以移除變形部分，R。θ / 且已盛行使用抛光/背部研磨裝置。 該裝置之好處在於，用以梦^…# 用以私除交形之背部研磨及拋光可使 用同一裝置完成，因此製造效率高。 在稭由上述使用切晶帶之裝置使用_切日日日帶後，在切晶 程序中將該㈣研磨晶圓分成“，並目定於—包裝中然 後組合。一般而5 ’將該丰導辦制、土加& / 千V脰衣造私序分成一前程序（其 中對該晶圓進行處理）及—後程序，該後程序係、在該晶圓^ 的所有程序結束後執行。例如在某些情況下，該前程序係 在一國家之一工廠内執行，而兮你 Ί 向3後程序係可在另一國家的 另一工廠内執行。 如上所述，該切晶帶包括該未切割切晶帶與該預切割切 晶帶，且該未切割切晶帶為傳統用法，而該預切割切晶帶 係最近才盛行使用。一般認為，值銥 勺得統的使用未切割切晶帶 裝置不能用於使用預切割切晶帶，# 7曰曰V，因此該裝置不能使用預 切割切晶帶。而且，該使用預切宝丨 貝刀割切晶帶裝置係在假定其 使用預切割切晶帶而製造的，因Μ 甘 U此，其不能使用未切割切 晶帶。一使用切晶帶裝置為（如上 ^ 、 上所述）一僅能使用一種帶 的裝置。 然而如上所述，該未切割切晶器命# ^ 日日咿與該預切割切晶帶在實 際製造程序中需混合使用，因此有 ’义要提供兩種使用切晶 帶之裝置，即一種用於該未切割切曰册二g ^ 刀日日页，而另一種用於該 預切割切晶帶。這會造成一問題，g ^ 即不但設備成本會增加 86500 1269379 ’而且需要有較大安裝空間。 此外，在剝離該保護帶並在該㈣研磨晶圓上實行餘刻 之後，或在拋光晶圓背部然後剝離該保護帶後，將 置於一晶圓盒内，帶到一工^ i^彳& 、 j廠進仃後處理，並將其切晶及 組合。 如上所述，該背部研磨晶圓之厚度係約小於150 _，去 將削呆h剝離或使用切晶帶後，若在保持該晶圓之 面上有灰層或類似物，則 ^ 貝b亥曰曰囫很谷易損壞出現產量 的問題。_ 牛低 【發明内容】 :發明係考慮了上述問題而開發出來，其第一目的是實 現-使用切晶帶之裝置，其可、 切曰器，,ν砝丨 个刀口j切日日耶與預切割 曰日 减〉、設傷成本並節省空間，第二目的是實現在 :使：背部研磨/切晶帶之系統及在其中使用的使用切曰 置’其係能減少該背部研磨晶圓的損壞率並提高產 為貫現上述第一目的 彳力姑 如曰* 目的依據本發明之第-方面的一使用 〜占 包括.一預切割切晶帶邊緣位置值測哭，复 能谓測該預切割切晶帶H 偵貝J。。其 使用的去+77 W 置及切告1i ，其將所 帶夕壯里^ 7而I狀，以便該使用切晶 页之衣置可用於該未切割切 日日贡及该預切剎切晶帶。 換3之’依據本發明之第— 為對一曰曰圓蚀田， 方面的该使用切晶帶之裝置 徵在於，包括…… '、…刀曰曰耘序的裝置，其特 .一保持该晶圓的臺面；一切晶帶供應機構 86500 1269379 ’其能設定該未切割切晶帶與該預切割切晶帶，並供應設 疋的未切割切晶帶或固定的預切割切晶帶；一預切割切晶 邊彖位置偵’則為’當該切晶帶供應機構供應該預切割切 日曰帶時，其能偵測該預切割切晶帶的邊緣位置；一使用機 構’其在該晶圓背部使用該切晶帶供應機構提供的該未切 ::切ί!物員切割切晶帶；及一切割器，當使用該未切 ^ ^其此將该未切割切晶帶切割成所需形狀。 依據本發明之第一方面的使用切晶帶之裝置可用於未切 割切晶帶與預切割切晶帶，由於該裝置能夠在使用該未切 ::晶帶時將其切割成所需形狀，且在使用該預切割切晶 页日、，其亦能夠藉由該預切割切晶帶邊緣位置偵測器偵測 到邊、、、彖位置，用於對齊位置及使用該切晶帶。 该未切割切晶帶與該預切割切晶帶可藉由該 晶粒焊接帶互相焊接而製成。 冗/、3 為貫現上述第-目的占 的在依據本發明之-第二方面的- 便用月口 [5研磨/ 士刀曰j 1 丨切曰…糸統中，變形部分藉由 研磨裝置移除，在背部研磨 九、4 -仅垃丁 α 所以，月間’在表面所使用的該保護 -保持不爾態了’將該晶圓送至一使用切晶帶之裝置 且在使用該切晶帶後將該保護帶剝離。 換言之，依據本發明之筮- ^月之弟一方面的使用背部研磨/切曰册 之糸統的特徵在於，其包括：―拋光/背部 研磨並拋光晶圓之背部使該晶圓變薄，半導體電^猎由 於该晶圓表面上，且該表面使用保護帶；…成 之裝置，其在該變薄之a 使用切晶帶 -寻之曰曰®、部使用該切晶帶；該使用背 86500 -10- 1269379 部研磨/切晶帶之系統的特徵還在於，使用該切晶帶之後， 该使用切晶帶之裝置將該保護帶剝離。 在依據本發明之該第二方面的使用背部研磨/切晶帶之 系、’該變薄晶圓係在使用_帶的狀態下送至該使用 切曰曰孓之i置’且在使用該切晶帶後將該保護帶剝離，即 該晶圓係始終處於使用—帶之狀態，因此不可能發生損壞。 /依據第二方面的一系統中使用的該使用切晶帶之裝置必 須在使用切晶帶後剝離該保護帶。此外，與第一方面類似 ，该裝置可用於未切割切晶帶與 較為理想。 刀“切日日孓兩種切晶帶 依據本發明之第三方面的一 # 統的特徵在於，里包括p研磨/切晶帶之系 之背…： p研磨器，其藉由抛光晶圓 之月錢该晶圓變薄，半導體電路即 使用切晶帶之裝置，其盥該背 "上，一 變薄之晶圓背部使用該切曰鄰配置，且在該 ^ 发刀日日贡，及一拾α说描 該背部研磨器的該變薄晶圓輪送至該使用切日·其=來自 通常’該背部研磨器及該 ”之凌置。 在不同工薇，因此，經^_二;之裝置係分別安置 與此相反，在依據本發明之第三;=之晶圓進行處理。 研磨器與該使用切晶帶之裝置係相鄰=系：中，該背部 並簡化其間的輸送路徑，減少曰圓/置，因此，可縮短 亦會減少。 日曰圓處理頻率，因而損壞率 【貫施方式】 圖2為一示意圖，其顯 ^製造程序中，本發明的 86500 1269379 5亥寺具體貫施例中—ϋ力忠/此iLR 7：tl l先/月口fv研磨裝置及一使用切晶帶 之裝置之組態。 如圖2所示，已通過探針測試的該晶圓係在置於一晶圓盒 16與17内的狀態下提供。在該晶圓之表面使用一保護帶。 -拋光/背部研磨裝置（p〇Hshing/back_grinding卿㈣加； PG) 1〇的-機械手臂取出置於該晶圓盒“與i7内的該晶圓 並將其輸送至該旋轉台上。隨著台的旋轉，該晶圓移動至 第-研磨器U及-第二研磨器，且其背部受到抛光（背部研 磨）。隨後，該晶圓進一步移動至一拋光器13，接受拋光， 以移除變形部分。然後，藉由—清潔器⑷青除該晶圓背部 及表面上的該等保護帶並將該晶圓輸送至一安裝基座1 $。 -機械手臂21將該安裝基座15上的該變薄晶圓輸送至一基 座22在基座22中將該晶圓反轉過來。隨後，能夠在一 執道25上移動的一機械手臂％將該晶圓輸送至一對準器u 。該對準器23偵測該晶圓的一定向平面或缺口並將該晶圓 調整至一固定位置及方向。隨後，機械手臂26將來自該對 準器23的該晶圓輸送至_ uv照射裝置24。該υνκ射穿置^ 以紫外線照射該等保護帶，以減少該保護帶的黏合力、。隨 後，機械手臂26將該晶圓輸送至—使用切晶帶之裝置％。 上述拋光/背部研磨裝置10與該uv照射裝置24與傳統裝 置相同。在傳統程序中，該晶圓的位置與方向不能由對準 器23調整’且保護帶係在紫外線照射後剝離，該晶圓包含 在晶圓盒之中，其與本項具體實施例不同，在本具體實施 例中，該使用切晶帶之裝置3〇係與該拋光/背部研磨裝^ 86500 -12- 1269379 及4 uv知、射裝置24相鄰配置，且將該晶圓輸送至該使用切 晶帶裝置3Q之操作無需在紫外線照射後剝離保護帶。 在j使用切曰曰帶之裝置3〇中，因為一框架已經安放在 位於藉由參考數字32指示的該部分處的一臺面上，故該晶 圓係月部朝上安放於_圓形孔洞巾。如上所述，該晶圓的 位置與方向已藉由對準器23調整，從而其安置於該臺面上 的一固疋位置處，並亦相對於框架3 1安置於一固定位置處 。固定於該臺面的該晶圓與該框架31移至參考數字32所指 示的位置，並進入一使用切晶帶裝置33，且在該背部使用 該切晶帶後，該晶圓與該框架31在一反轉機構34中反轉， 且該晶圓表面上的保護帶會在一保護帶剝離裝置3 5中剝離 。隨後，該晶圓與該框架自一卸載區段36輸送至一切晶裝 置9 1 ,並在切晶後在一組合裝置92中組合於一包裝中。 圖3為一不意圖，其顯示依據本具體實施例之使用切晶帶 之裝置33的組態。如圖3所示，該晶圓與一框架（此處以參 考數字4指示）被吸至臺面5上。由於具有一移動機構6，故 臺面5可兼在水平及垂直方向中移動。參考數字41所指示為 一切晶帶供應捲盤，其提供該切晶帶，且該旋轉軸可保持 靜止狀態或自由旋轉狀態（其中，旋轉軸藉由拉切晶帶而旋One of the recent trends is that semiconductor devices are mounted more frequently on portable devices or cards, thus making semiconductor wafers (grains) thinner and thinner. To this end, the back of a wafer is polished with a grinder before dicing. This is called back grinding and the device for back grinding is called a back grinder. Back grinding is performed using a protective tape on the surface for protection. When the back-wafer is performed on the wafer, deformation occurs, which can be removed by etching, but the Z-cut cannot be performed in a state where the protective tape is used, and therefore etching should be performed after the protective tape is peeled off. With back grinding, the thickness of the wafer is typically less than 1 5 Ο μηι in Z 86500 1269379. The most recent, instead of the monthly grinding process, the method of stupid money, polishing the back of a wafer to remove the deformed part, R. θ / has been used in polishing / back grinding equipment. The advantage of this device is that the back grinding and polishing used for the private cross-section can be completed by the same device, and thus the manufacturing efficiency is high. After the straw is used by the apparatus using the dicing tape described above, the (four) ground wafer is divided into "in the dicing process, and is specified in the package and then combined. Generally, the 5' will be abundance. The guide system, the Tujia & / 千 脰 造 造 分成 分成 分成 分成 分成 分成 分成 分成 分成 分成 分成 分成 分成 分成 分成 分成 分成 分成 分成 分成 分成 分成 分成 分成 分成 分成 分成 分成 分成 分成 分成 分成 分成 分成 分成 分成 分成 分成 分成For example, in some cases, the pre-program is executed in one of the factories in one country, and the post-program can be executed in another factory in another country. As described above, the dicing tape The uncut dicing tape and the pre-cut dicing tape are included, and the uncut dicing tape is conventionally used, and the pre-cut dicing tape is recently used. It is generally considered that the value of the dicing tape is not used. The cutting and dicing tape device cannot be used to use the pre-cut dicing tape, # 7曰曰V, so the device cannot use the pre-cut dicing tape. Moreover, the pre-cut boring knife cutting device is assumed. It is made using a pre-cut dicing tape, because it can't An uncut dicing tape is used. A dicing tape device is used (as described above, above) a device that can only use one tape. However, as described above, the uncut dicing device #^日咿The pre-cut dicing tapes need to be mixed in the actual manufacturing process, so there are two devices that use the dicing tape, that is, one for the uncut dicing book 2 g ^ knives day page, and the other Used for the pre-cutting dicing tape. This causes a problem, not only the equipment cost will increase 86500 1269379 'and requires a large installation space. In addition, the protective tape is peeled off and the (4) polished wafer is implemented. After engraving, or after polishing the back of the wafer and then peeling off the protective tape, it will be placed in a wafer cassette, brought to a factory, processed, processed, and diced and combined. As described above, the thickness of the back-grinding wafer is less than about 150 Å, and after stripping or using the dicing tape, if there is a gray layer or the like on the surface of the wafer, b 曰曰囫 曰曰囫 曰曰囫 谷 谷 易 易 易 易 易 易 谷 谷 谷 谷 谷 谷Contents: The invention was developed in consideration of the above problems, and its first purpose is to realize - a device using a dicing tape, which can be used, a cutter, and a knives j-cutting day and pre-cutting day The second objective is to: make the system of the back grinding/cutting tape and the use of the cutting device used therein to reduce the damage rate of the back grinding wafer and The purpose of improving the production is to achieve the above-mentioned first objective. The purpose of the first aspect of the present invention is to use a pre-cutting edge of the pre-cut dicing tape to measure the crying. The ribbon H is detected by J.. It is used to go to +77 W and to slash 1i, which will take the eve of the _ _ _ _ _ _ I, so that the use of the cleavage page can be used for the uncut day Rigong and the pre-cut brake cut crystal ribbon. In accordance with the third aspect of the present invention, the device for using the dicing tape in the case of a round etched field is characterized by, including... ', ... the device of the knives, the special one. The mesa of the wafer; all of the ribbon supply mechanism 86500 1269379 'which can set the uncut dicing tape and the pre-cut dicing tape, and supply the uncut dicing tape or the fixed pre-cut dicing tape provided with enamel; a pre-cut dicing edge position detection is 'when the dicing tape supply mechanism supplies the pre-cut tangential tape, it can detect the edge position of the pre-cut dicing tape; a use mechanism' The back of the wafer is cut by the dicing tape supply mechanism, and the cutter is used to cut the dicing tape; and a cutter is used to cut the uncut dicing tape. Into the desired shape. The apparatus using the dicing tape according to the first aspect of the present invention can be used for an uncut dicing tape and a pre-cut dicing tape, since the apparatus can cut the uncut:: crystal ribbon into a desired shape, And when the pre-cut dicing page is used, the edge, the 彖 position can be detected by the pre-cut dicing tape edge position detector for aligning the position and using the dicing tape. The uncut dicing tape and the pre-cut dicing tape can be formed by welding the die bonding strips to each other. Redundant /, 3 for the above-mentioned first-purpose object in the second aspect of the invention - use the lunar port [5 grinding / knife 曰 j 1 丨 曰 曰 糸 糸 , , , , 变形 变形 变形 变形 变形 变形 变形 变形 变形 变形 变形 变形 变形The device is removed, and the back is ground 9 - 4 - only the diced α. Therefore, during the month, the protection used on the surface - remains unchanged - the wafer is sent to a device using a dicing tape and is used. The protective tape is peeled off after the dicing tape. In other words, in accordance with the present invention, the use of a back grinding/cutting system on the one hand is characterized by: - polishing/back grinding and polishing the back of the wafer to thin the wafer, The semiconductor device is mounted on the surface of the wafer, and the surface is protected by a device; the device is used in the thinned layer a, and the dicing tape is used. The back 86500 -10- 1269379 portion of the polishing/cutting ribbon system is further characterized in that after the dicing tape is used, the protective tape is peeled off by the device using the dicing tape. In the second aspect of the present invention, the back grinding/cutting tape system is used, and the thinned wafer is sent to the use switch in the state of using the tape, and is used. After the dicing tape is stripped, the protective tape is peeled off, that is, the wafer system is always in the state of use-band, so that damage is unlikely to occur. The apparatus using the dicing tape used in a system according to the second aspect must peel off the protective tape after using the dicing tape. Furthermore, similar to the first aspect, the device can be used for uncut dicing tapes and is preferred. The knives "cutting the two kinds of dicing tapes according to the third aspect of the present invention are characterized in that they include a back of a p-grinding/cutting tape...: a p-grinding machine by polishing a wafer The wafer is thinned by the moon, and the semiconductor circuit is a device using a dicing tape. On the back, a thinned wafer is used on the back of the wafer, and the knives are used in the day. And picking up the thinned wafer of the back grinder to the use of the cutting day, which is from the usual 'the back grinder and the'. In the different work, the device is placed in the opposite direction, and the wafer is processed in the third; = according to the present invention. The grinder and the device using the dicing tape are adjacent to the system: in the middle, the back is simplified and the transport path is reduced, and the rounding/setting is reduced, so that the shortening and the reduction can be reduced. The processing frequency of the sundial circle, and thus the damage rate [through the way] Figure 2 is a schematic diagram, in the manufacturing process, the 86500 1269379 5 Temple of the present invention in the specific embodiment - ϋ力忠 / this iLR 7: tl l First/month port fv grinding device and configuration of a device using a dicing tape. As shown in Fig. 2, the wafer which has been tested by the probe is provided in a state of being placed in a wafer cassette 16 and 17. A protective tape is used on the surface of the wafer. - Polishing/Back Grinding Device (p〇Hshing/back_grinding (4) Plus; PG) 1〇 - The robot arm takes out the wafer placed in the wafer cassette "with i7 and transports it to the rotating table. With the rotation of the stage, the wafer is moved to the first-grinder U and the second-grinder, and the back is polished (back-grinded). Subsequently, the wafer is further moved to a polisher 13 to be polished to be moved. In addition to the deformed portion, the protective tape on the back and surface of the wafer is then removed by the cleaner (4) and the wafer is transferred to a mounting base 1 $. - The robot arm 21 mounts the mounting base 15 The thinned wafer is transferred to a susceptor 22 to reverse the wafer in the susceptor 22. Subsequently, a robotic arm that can move on a trajectory 25 sends the wafer to an alignment. The aligner 23 detects a certain plane or notch of the wafer and adjusts the wafer to a fixed position and orientation. Subsequently, the robot arm 26 transports the wafer from the aligner 23 to the wafer. _ uv illuminating device 24. The υνκ shot is placed on the protective tape by ultraviolet rays to reduce the The adhesive force of the belt, and then the robot arm 26 transports the wafer to the device using the dicing tape. The above polishing/back grinding device 10 and the uv irradiation device 24 are the same as the conventional device. In the conventional program, The position and orientation of the wafer cannot be adjusted by the aligner 23 and the protective tape is peeled off after the ultraviolet irradiation, and the wafer is contained in the wafer cassette, which is different from the specific embodiment, in the specific embodiment The device 3 using the dicing tape is disposed adjacent to the polishing/back grinding device 86500 -12- 1269379 and the 4 uv sensing device 24, and the wafer is transported to the dicing tape device. The operation of 3Q does not need to peel off the protective tape after ultraviolet irradiation. In the device 3 using a cutting tape, since a frame has been placed on a face at the portion indicated by reference numeral 32, the crystal The circular moon is placed upwards on the _ circular hole towel. As described above, the position and orientation of the wafer has been adjusted by the aligner 23 so that it is placed at a solid position on the table, and Placed in a fixed position relative to the frame 3 1 Positioning the wafer fixed to the mesa and the frame 31 to the position indicated by reference numeral 32, and entering a use of the dicing tape device 33, and after using the dicing tape on the back, the wafer is The frame 31 is reversed in a reversing mechanism 34, and the protective tape on the surface of the wafer is peeled off in a protective tape stripping device 35. Subsequently, the wafer and the frame are transported from an unloading section 36 to All of the crystal devices 9 1 are combined in a package after dicing in a combination device 92. Figure 3 is a schematic view showing the configuration of the device 33 using the dicing tape in accordance with the present embodiment. As shown in FIG. 3, the wafer is attracted to a mesa 5 with a frame (here indicated by reference numeral 4). Since the moving mechanism 6 is provided, the table 5 can move in both the horizontal and vertical directions. Reference numeral 41 indicates all of the ribbon supply reels, which provide the dicing tape, and the rotating shaft can be maintained in a stationary state or a freely rotating state (wherein the rotating shaft is rotated by pulling the ribbon)

轉）。該切晶帶係分成切晶帶本身及該襯墊，即部分滾輪U 上的表層覆蓋，且該襯墊與該切晶帶之供給同步繞一宁於 43旋轉。對於不使用襯墊的切晶帶，無需使用滾輪43。= 裝置如此設計，使該切晶帶本身係自滾輪42經由滾輪仏與 47後圍繞一滾輪48旋轉。提供有一邊緣偵測器44， 、 σ /、在預 86500 13 1269379 切割切晶帶情況下，偵測滾輪42與45之間該切晶帶的邊緣。 此外，其亦可能藉由適當改變該邊緣偵測器44的安裝位 置而偵測出該切晶帶之側緣或後緣。 、 滾輪47與48附著於一移動部件46上，且一移動機構的限 制垓私動部件46，使得其僅能向右及左移動。滾輪47稱為 壓帶滾輪’其能向上及向下移動，並在一恒定壓力下下壓 。切割器60係藉由一旋轉移動機構（儘管此處並未顯示）保 持其可旋# ’且該切割器之刀口可圍繞該框架之該孔洞晝 出一圓形軌跡。 圖4為示思圖，其顯示一預切割切晶帶。如圖*所示， -圓形切晶帶52形成於-載送帶51上，—圓形晶粒焊接帶 53形成於其上，並進一步形成一襯墊“，以便覆蓋該載送 帶51。如圖1所示，該切晶帶52係大於該框架2的該圓形孔 ，但不可大於框架2。該晶粒焊接帶53係用於將該晶粒的背 部固定於該包裝上之帶，且其為一圓幵[大小等於或略微 大於該晶圓。載送帶51及襯墊54之製造材料使其易於從切 晶帶52及晶粒焊接帶53上剝離。此處，該圖顯示，其上既 …、切aa V 5 2，也無晶粒焊接帶5 3存在的部分該載送帶$ 1係 直接與該襯墊54接觸，但唯一的要求是，在與該切晶帶” 的該圓形有一固定距離的一區域内沒有切晶帶52與晶粒黏 合帶53存在，因此，切晶帶52與晶粒黏合帶53可存在於除 該特定區域外的任何區域上。 圖5A至5C為示意圖，其說明該使用切晶帶之裝置如何使 用該未切割切晶帶。如圖5A所示，滾輪47與48係位於該對 36500 -14 - 1269379 晶圓的右側及右邊 ^ ^ 而邛，且框架位於滾輪47附近。隨後， 滾輪48終止旋轉，脸μ 又 ^ ^ 將滾輪41帶入一自由旋轉狀態，且將該 移動部件移至为4息 ’從而滾輪47與48亦移至左邊.。因此將 该未切割切晶帶從 攸/衰輪41拉出，且藉由滾輪47使該未切割 切晶帶受壓，並將复 ^貼至δ亥晶圓與該框架的背部。 如圖5 Β所示，去八丄> # ^ 田&生在5亥晶圓與該框架的整個背部使用 該未切割切晶帶之 ▼之狀恶呀，切割器60會移至該框架上，且 一刀片6 1的刀口合盥 y 3 °亥框木上的該未切割切晶帶接觸。隨 後’切割器60旋糙梦知 w 一 心動’亚將該未切割切晶帶切割成圖1 所示形狀。 ί1近後如圖5C所示，滾輪4H皮帶入一靜止狀態，且藉由 在滾輪48旋轉時，將該移動部件移至右邊，而將滾輪47與 鄉至右4。藉此，除了該㈣彳ϋ所切割之圓形部分外的 。亥未切割切晶帶之該部分會圍繞滾輪48滾動。&外，在部 分滾輪48處該未切割切晶帶之方向明顯變化之事實對於： 剝離的該圓形部分以外的該未㈣切晶帶非常重要。 在上述方式中，在固定於如圖1Α與圖1Β所示臺面上的該 ㈣料㈣H使㈣切適用於採用與該^ 粒焊接帶焊接的該未切割切晶帶的情況。而且，在圖5顯示 的狀&下，有可能在臺面未提升的情況下將滾輪47與48移 至取左側，且不在該晶圓與該框架使用該未切割切晶帶， Ik後藉由提升該臺面在該晶圓與該框架的該等完整表面上 同％使用該該未切割切晶帶。 當使用該預切割切晶帶時，滾輪47與48會移至右邊，且 86500 1269379 $面5移動，直至該框架的左端位於滾輪44的右側之上。隨 後γ將滾輪4 1帶入一自由旋轉狀態，並轉動滾輪48。藉此 滾輪41提供該預切割切晶帶，隨後，藉由邊緣偵測器44偵 測該預切割切晶帶之邊緣，且與此同#，該臺面開始向左 移動。由於臺面以與該預切割切晶帶相同的速度移動，故 可藉由向。亥aa圓及該框架擠壓滾輪4 7而在該框架及該晶圓 的固定位置使用該預切割切晶帶。由於該切晶帶的方向在 部分滾輪47處明顯變化，故該載送帶會圍繞滾輪48滾動， 而該圓形切晶帶與晶粒焊接帶會由此使用至該框架及該晶 圓上。按此方式，若藉由滾輪48之滾動在該框架及該晶圓 已移至#刀；袞輪4 7以外之左邊的狀態下停止，則可如圖工a 及1B所示，將固定於該臺面的該晶圓與該框架的該等背面 上使用該切晶帶。 保護帶剝離褒置35具有(例如)如圖3所示的一結構，且可 藉由沒有切割器的-裝置而實現。保護帶剝離裝置h會加 熱已反轉的該晶圓，以減少該保護帶的黏合力。隨後向該 保護帶使用另一黏合帶，且在剝離該黏合帶時，一同剝離 έ亥保護帶。 包括依據本發明之該等具體實施例之該背部研磨哭幻 使用切晶帶之裝置的部分已如上述。以下藉由參考圖： 圖6Η說明在此程序中在該晶圓表面使用該等帶的變化。 如圖6Α所示，在該抛光/背部研磨裝 辦锋义丄^ 、甲’在一厚晶圓 ，交溥丽在其表面上使用一保護帶7〇， m a 其月部藉由研磨， 80來研磨並拋光。隨後，如圖6B所示， 對使用保護帶70^ 86500 1269379 5亥變薄晶圓1進行、、主、知 仃π冻。之後，將晶圓1反轉，使其背部向 上。在該使用切晶帶裝置33中，該晶圓〗係安置在圖心； 該框架的該孔中背 口匕所不 圓_等背部使=Λ’：·如圖6D所示在該框架2與該晶 53焊接的該預切日：；52。此時，若使用與晶粒焊接帶 粒焊接帶53,❹曰曰^則僅在該晶圓1的背部使用該晶 、’使用切晶帶5 2 (如圖示）。 在如圖6E所示及趟 # 置35中使用-剝離：圖印所示’在保護帶剝離裝 ; 贡7 1，且當剝離帶7 1如圖0G剝離時，將 保護帶70—同剝離。 f將 =6H所示，在該切晶裝置中形成溝㈣ 溥晶圓1及晶粒焊接黑^古r t ^ ^ ^ 態下，藉由加熱、A卻戍切晶帶5 2的中點。在此狀 人 — 7 P或务、外、、泉照射，減小該切晶帶的黏 1”:且=真空吸收或類似操作可輕易從該切晶帶剝離 狀態下不會減小。…才料，以便其黏合力在此 如上料’依據本發明之第一方面的該使用切晶帶之穿 ，用该未切割切晶帶與該預切割謂，因此其不僅 ::減?广：成本而且可有效節省空間。此★，依據本 弟—及第二方面的該使用背部研磨/切晶帶之系統 2使用切晶帶之裝置’可有效減少對該等背部研磨晶圓 的損壞並可提高產量。 【圖式簡單說明】 本發明的該等特徵及好處根據以上結合附圖之說明更易 理解，其中： 又勿 86500 17 1269379 圖1 A與圖1 B為示意圖，其顯示一晶圓及一框架使用一切 晶帶的狀態。 圖2為一示意圖，其顧示本發明的該等具體實施例中包括 一背部研磨器及一使用切晶帶之裝置的部分組態。 圖3為一示意圖，其顯示該等具體實施例中該使用切晶帶 之裝置的組態。 圖4為一示意圖，其顯示在該等具體實施例中使用的一預 切割切晶帶。 _ 圖5A至5C為示意圖，其說明如何在該使用切晶帶之裝置 中使用一未切割切晶帶。 圖6A至6H為示意圖，其說明欲在該背部研磨程序及該使 用切晶帶之程序中使用的該等帶的變化。 【圖式代表符號說明】 卜1， 晶圓 2 框架 3 切晶帶 4 參考數字 5 臺面 6 移動機構 10 拋光/背部研磨裝置 11 第一研磨器 13 抛光器 14 清潔器 15 安裝基座 86500 -18 - 晶圓盒 機械手臂 基座 對準器 紫外線照射裝置 執道 機械手臂 使用切晶帶之裝置 框架 參考數字 使用切晶帶之裝置 反轉機構 保護帶剝離裝置 卸載區段 參考數字 滾輪 邊緣偵測器 滾輪 移動部件 滾輪 移動機構 載送帶 圓形切晶帶 圓形晶粒焊接帶 19 1269379 54 襯墊 60 切割器 70 保護帶 71 剝離 80 研磨石 81 溝槽 91 切晶裝置 92 組合裝置 -20- 86500turn). The dicing tape is divided into a dicing tape itself and the liner, i.e., a surface layer covering a portion of the roller U, and the liner rotates about a rotation of 43 in synchronization with the supply of the dicing tape. For a dicing tape that does not use a liner, it is not necessary to use the roller 43. = The device is designed such that the dicing tape itself rotates from the roller 42 via the roller cymbal 47 and around a roller 48. An edge detector 44, σ / is provided to detect the edge of the dicing band between the rollers 42 and 45 in the case of cutting the dicing tape by the pre-86500 13 1269379. In addition, it is also possible to detect the side or trailing edge of the dicing tape by appropriately changing the mounting position of the edge detector 44. The rollers 47 and 48 are attached to a moving member 46, and a moving mechanism restricts the squatting member 46 so that it can only move to the right and left. The roller 47 is called a pinch roller' which is movable up and down and is pressed down under a constant pressure. The cutter 60 is held in rotation by a rotary moving mechanism (although not shown here) and the cutting edge of the cutter can project a circular trajectory around the hole of the frame. Figure 4 is a diagram showing a pre-cut dicing tape. As shown in FIG. *, a circular dicing tape 52 is formed on the carrier tape 51, on which a circular die bond belt 53 is formed, and a pad is further formed to cover the carrier tape 51. As shown in FIG. 1, the dicing tape 52 is larger than the circular hole of the frame 2, but not larger than the frame 2. The die bonding tape 53 is used for fixing the back of the die to the package. The strip is a round 幵 [the size is equal to or slightly larger than the wafer. The carrier tape 51 and the spacer 54 are made of a material which makes it easy to peel off from the dicing tape 52 and the die bond belt 53. Here, the figure It is shown that the carrier tape $1 is directly in contact with the pad 54 on the portion where the aa V 5 2 is cut, and the die-free ribbon 5 3 is present, but the only requirement is that the crystal is cut There is no dicing tape 52 and die bonding tape 53 in a region of the circle having a fixed distance. Therefore, the dicing tape 52 and the die bonding tape 53 may exist on any region other than the specific region. . Figures 5A through 5C are schematic views showing how the apparatus for using a dicing tape uses the uncut dicing tape. As shown in Fig. 5A, the rollers 47 and 48 are located on the right and left sides of the pair of 36500 - 14 - 1269379 wafers, and the frame is located near the roller 47. Subsequently, the roller 48 terminates the rotation, and the face μ again ^ ^ brings the roller 41 into a freely rotating state, and moves the moving member to the position 4 so that the rollers 47 and 48 are also moved to the left. The uncut dicing tape is thus pulled from the crucible/destroy wheel 41, and the uncut dicing tape is pressed by the roller 47 and attached to the δH wafer and the back of the frame. As shown in Fig. 5, go to gossip >#^田& born in the 5 hai wafer and the entire back of the frame using the uncut dicing tape, the cutter 60 will move to the On the frame, the edge of a blade 61 is brought into contact with the uncut dicing tape on the y 3 ° frame wood. The uncut cutter 60 is then cut into the shape shown in Fig. 1 by turning on the cutter 60. Immediately thereafter, as shown in Fig. 5C, the roller 4H is brought into a stationary state, and by moving the moving member to the right while the roller 48 is rotated, the roller 47 is moved to the right by 4. Thereby, in addition to the circular portion cut by the (four) 彳ϋ. This portion of the uncut dicing tape will roll around the roller 48. In addition, the fact that the direction of the uncut dicing tape is significantly changed at the partial roller 48 is very important for: the un-fourth dicing tape other than the rounded portion of the peeling. In the above manner, the (four) material (four) H fixed to the table surface as shown in Figs. 1A and 1B is used to apply the (four) cutting to the case where the uncut dicing tape welded to the bonding tape is used. Moreover, in the shape & shown in Fig. 5, it is possible to move the rollers 47 and 48 to the left side without lifting the table, and not to use the uncut dicing tape for the wafer and the frame, Ik The uncut dicing tape is used by raising the mesa in the same amount of the wafer and the complete surface of the frame. When the pre-cut dicing tape is used, the rollers 47 and 48 will move to the right and the 86500 1269379 $ face 5 will move until the left end of the frame is above the right side of the roller 44. Then, γ brings the roller 4 1 into a freely rotating state and rotates the roller 48. The pre-cut dicing tape is thereby provided by the roller 41, and then the edge of the pre-cut dicing tape is detected by the edge detector 44, and the table starts to move to the left. Since the mesa moves at the same speed as the pre-cut dicing tape, it can be used. The aa a circle and the frame squeezing roller 4 7 use the pre-cut dicing tape at the frame and the fixed position of the wafer. Since the direction of the dicing tape changes significantly at the portion of the roller 47, the carrier tape will roll around the roller 48, and the circular dicing tape and the die bond tape will be used thereby on the frame and the wafer. . In this manner, if the scrolling of the roller 48 is stopped in the frame and the wafer has been moved to the left side of the #刀;衮轮4 7 , it can be fixed as shown in Figures a and 1B. The dicing tape is used on the wafer of the mesa and on the back side of the frame. The protective tape peeling device 35 has, for example, a structure as shown in Fig. 3, and can be realized by a device without a cutter. The protective tape stripping device h heats the wafer that has been reversed to reduce the adhesion of the protective tape. Another adhesive tape is then applied to the protective tape, and when the adhesive tape is peeled off, the protective tape is peeled off together. The portion including the device for back grinding and crying using the dicing tape in accordance with the specific embodiments of the present invention has been as described above. The following is by reference to the figure: Figure 6A illustrates the variation in the use of the strips on the wafer surface in this procedure. As shown in Fig. 6Α, in the polishing/back grinding apparatus, a thick wafer is used, and a protective tape is used on the surface of the wafer, and the moon is ground by grinding. To grind and polish. Subsequently, as shown in FIG. 6B, the wafer 1 is thinned using the protective tape 70^86500 1269379, and the main wafer is frozen. Thereafter, the wafer 1 is reversed so that its back faces upward. In the use of the dicing tape device 33, the wafer is placed in the center of the drawing; the back of the frame is not rounded, and the back is made = Λ': as shown in Fig. 6D in the frame 2 The pre-cut day welded to the crystal 53: 52. At this time, if the die-bonded ribbon 53 is bonded to the die, the crystal is used only on the back of the wafer 1, and the dicing tape 5 2 (as shown) is used. In the case shown in Fig. 6E and 趟#, the use of - peeling: the print shown in the protective tape stripping device; tribute 7 1, and when the peeling tape 7 1 is peeled off as shown in Fig. 0G, the protective tape 70 is peeled off . f will be as shown in =6H, in the dicing device, the trench (4) 溥 wafer 1 and the grain solder black 古 ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ In this case, the person is 7 P or the external, and the spring is irradiated, and the adhesion of the dicing tape is reduced 1: and = vacuum absorption or the like can be easily removed from the diced strip. In order to make the adhesive force as described above, the wearing of the dicing tape according to the first aspect of the present invention uses the uncut dicing tape and the pre-cutting, so that it not only:: Cost and space saving. This ★, according to the younger brother - and the second aspect of the system using the back grinding / dicing tape 2 using a dicing tape device - can effectively reduce the damage of the back grinding wafer and The present invention can be easily understood according to the above description in conjunction with the accompanying drawings, wherein: 86500 17 1269379 FIG. 1A and FIG. 1B are schematic diagrams showing a wafer. And a frame using all of the states of the ribbon. Figure 2 is a schematic diagram showing the partial configuration of a back grinder and a device using a dicing tape in the specific embodiments of the present invention. Schematic showing the specific embodiments The configuration of the device using the dicing tape. Figure 4 is a schematic view showing a pre-cut dicing tape used in the specific embodiments. _ Figures 5A to 5C are schematic views showing how to use the dicing An uncut dicing tape is used in the device of the ribbon. Figures 6A through 6H are schematic views illustrating variations of the bands to be used in the back grinding process and the procedure using the dicing tape. Description] Bu1, Wafer 2 Frame 3 Tangent Band 4 Reference Numeral 5 Table 6 Moving Mechanism 10 Polishing/Back Grinding Device 11 First Grinder 13 Polisher 14 Cleaner 15 Mounting Base 86500 -18 - Wafer Box Machinery Arm base aligner UV irradiation device Exercising robot arm using dicing tape device frame reference number using dicing tape device reversing mechanism protection tape stripping device unloading section reference digital roller edge detector roller moving part roller moving Mechanism carrier with round dicing tape round die welded strip 19 1269379 54 pad 60 cutter 70 protective tape 71 stripping 80 grinding stone 81 groove 91 Cleavage device 92 Combination device -20- 86500

Claims (1)

126場說849丨號專利申請案 中文申請專利範圍替換本(95年8月） 拾、申請專利範圍： 1. 一種使用背部研磨/切晶帶之 1心糸統，其包括： 一拋光/背部研磨裝置，里 主道M + h 今納一取自一晶圓盒之晶圓 ’半V體電路被形成於該晶阓 ^ m _之一表面，且於該晶圓之 该表面上使用一保護帶，該 凌置於5亥日日圓之背面進行研 磨作業後於該晶圓之背面持續進行拋光作業，且清= 晶及該使用該保護帶於該晶圓之該表面； 一對準器，其偵測該被反錶 饭久褥之晶囫之一定位平面或槽 口，並調整該晶圓至-固定位置及方向； 一紫外線（UV)照射裝置，Α 具使用紫外線照射該保護 帶，以減少該保護帶的黏合力；及 -使用切晶帶裝置，其選擇一未切割切晶帶或一預切 』切曰e f X對-平面框架使用該選定之切晶帶，該平 面框架有-圓形孔洞，且該晶圓之該背面被安放於該圓 I孔/同中反轉5亥框架及該晶圓，並自該晶圓之該表面 剝離該保護帶； 其中㈣光/背部研磨裝置、該對準器、該紫外線照射 裝置及該使用切晶帶裝置以相鄰的方式配置，且於該拋 光/背部研磨裝置、該對準器、該紫外線照射裝置及該使 用切晶帶裝置中之過程，係相續地產生。 86500126 pp. 849 专利 Patent Application Chinese Patent Application Scope Replacement (August 95) Pickup, Patent Scope: 1. A 1 糸 system using a back grinding/cutting tape, including: a polished/back In the grinding device, the inner main channel M + h is a wafer from a wafer cassette. A semi-V body circuit is formed on one surface of the wafer, and a surface is used on the surface of the wafer. a protective tape, which is placed on the back side of the 5th day of the Japanese calendar to perform a polishing operation on the back side of the wafer, and is cleaned and used to the surface of the wafer; an aligner Detecting one of the positioning planes or slots of the wafer that has been used for a long time, and adjusting the wafer to a fixed position and direction; an ultraviolet (UV) irradiation device that irradiates the protective tape with ultraviolet rays To reduce the adhesion of the protective tape; and - using a dicing tape device, which selects an uncut dicing tape or a pre-cut 曰 ef X-to-plane frame using the selected dicing tape, the planar frame There is a circular hole and the back side of the wafer is Putting the 5H frame and the wafer in the circle I hole/the same, and peeling off the protective tape from the surface of the wafer; wherein (4) the light/back grinding device, the aligner, the ultraviolet irradiation device and The use of the dicing tape device is disposed in an adjacent manner, and the processes in the polishing/back grinding device, the aligner, the ultraviolet ray irradiation device, and the use of the dicing tape device are successively produced. 86500
TW092118491A 2002-07-12 2003-07-07 Back-grinding/dicing tape applying system TWI269379B (en)

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JP2002204704A JP2004047823A (en) 2002-07-12 2002-07-12 Dicing tape sticking device and back grind dicing tape sticking system

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