FR3077423B1 - Structure de manipulation pour amincir un substrat et procede d'amincissement d'un substrat utilisant une telle structure - Google Patents

Structure de manipulation pour amincir un substrat et procede d'amincissement d'un substrat utilisant une telle structure Download PDF

Info

Publication number
FR3077423B1
FR3077423B1 FR1850732A FR1850732A FR3077423B1 FR 3077423 B1 FR3077423 B1 FR 3077423B1 FR 1850732 A FR1850732 A FR 1850732A FR 1850732 A FR1850732 A FR 1850732A FR 3077423 B1 FR3077423 B1 FR 3077423B1
Authority
FR
France
Prior art keywords
thinning
substrate
face
handling
adhesive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR1850732A
Other languages
English (en)
Other versions
FR3077423A1 (fr
Inventor
Messaoud Bedjaoui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA, Commissariat a lEnergie Atomique et aux Energies Alternatives CEA filed Critical Commissariat a lEnergie Atomique CEA
Priority to FR1850732A priority Critical patent/FR3077423B1/fr
Priority to PCT/FR2019/050154 priority patent/WO2019150020A1/fr
Publication of FR3077423A1 publication Critical patent/FR3077423A1/fr
Application granted granted Critical
Publication of FR3077423B1 publication Critical patent/FR3077423B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/05—Accumulators with non-aqueous electrolyte
    • H01M10/052—Li-accumulators
    • H01M10/0525—Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/05—Accumulators with non-aqueous electrolyte
    • H01M10/058—Construction or manufacture
    • H01M10/0585—Construction or manufacture of accumulators having only flat construction elements, i.e. flat positive electrodes, flat negative electrodes and flat separators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/05—Accumulators with non-aqueous electrolyte
    • H01M10/056—Accumulators with non-aqueous electrolyte characterised by the materials used as electrolytes, e.g. mixed inorganic/organic electrolytes
    • H01M10/0561—Accumulators with non-aqueous electrolyte characterised by the materials used as electrolytes, e.g. mixed inorganic/organic electrolytes the electrolyte being constituted of inorganic materials only
    • H01M10/0562—Solid materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M6/00—Primary cells; Manufacture thereof
    • H01M6/40—Printed batteries, e.g. thin film batteries
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Laser Beam Processing (AREA)

Abstract

Structure de manipulation (100) pour amincir un substrat, sur lequel peut être disposé un dispositif microélectronique, telle qu'une microbatterie au lithium, comprenant un film adhésif (110) et un cadre de support (120), le film adhésif (110) comprenant une première face adhésive (111) et une seconde face (112), opposée à la première face adhésive (111).
FR1850732A 2018-01-30 2018-01-30 Structure de manipulation pour amincir un substrat et procede d'amincissement d'un substrat utilisant une telle structure Expired - Fee Related FR3077423B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR1850732A FR3077423B1 (fr) 2018-01-30 2018-01-30 Structure de manipulation pour amincir un substrat et procede d'amincissement d'un substrat utilisant une telle structure
PCT/FR2019/050154 WO2019150020A1 (fr) 2018-01-30 2019-01-24 Procede d'amincissement d'un substrat assemble avec une structure de manipulation

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1850732 2018-01-30
FR1850732A FR3077423B1 (fr) 2018-01-30 2018-01-30 Structure de manipulation pour amincir un substrat et procede d'amincissement d'un substrat utilisant une telle structure

Publications (2)

Publication Number Publication Date
FR3077423A1 FR3077423A1 (fr) 2019-08-02
FR3077423B1 true FR3077423B1 (fr) 2020-11-27

Family

ID=62167497

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1850732A Expired - Fee Related FR3077423B1 (fr) 2018-01-30 2018-01-30 Structure de manipulation pour amincir un substrat et procede d'amincissement d'un substrat utilisant une telle structure

Country Status (2)

Country Link
FR (1) FR3077423B1 (fr)
WO (1) WO2019150020A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3099292B1 (fr) 2019-07-23 2021-09-24 Commissariat Energie Atomique Procede d’amincissement et d’encapsulation de composants microelectroniques

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100652788B1 (ko) * 2004-10-26 2006-12-01 다이닛뽕스크린 세이조오 가부시키가이샤 웨이퍼 처리장치 및 웨이퍼 처리방법
WO2007055010A1 (fr) * 2005-11-10 2007-05-18 Renesas Technology Corp. Procede de fabrication d'un dispositif semi-conducteur et dispositif semi-conducteur
US20080242052A1 (en) * 2007-03-30 2008-10-02 Tao Feng Method of forming ultra thin chips of power devices
JP6052304B2 (ja) * 2012-12-26 2016-12-27 日立化成株式会社 エキスパンド方法、半導体装置の製造方法、及び半導体装置
US9129899B2 (en) * 2013-07-17 2015-09-08 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for thinning wafer thereof

Also Published As

Publication number Publication date
FR3077423A1 (fr) 2019-08-02
WO2019150020A1 (fr) 2019-08-08

Similar Documents

Publication Publication Date Title
TW200509180A (en) Method for fabricating thin film pattern, device and fabricating method therefor, method for fabricating liquid crystal display, liquid crystal display, method for fabricating active matrix substrate, electro-optical apparatus, and electrical apparatus
EP3312644A3 (fr) Film transparent empilé et fenêtre pour dispositif d'affichage et dispositif d'affichage
EP3567421A3 (fr) Afficheur
EP4102565A3 (fr) Dispositif d'affichage
SG156635A1 (en) Exposure apparatus and device manufacturing method
FR3066317B1 (fr) Procede de fabrication d'un dispositif d'affichage emissif a led
TW200638074A (en) Polarizing plate, method for manufacturing such polarizing plate, optical film and image display device using such optical film
EP3187928A3 (fr) Afficheur
ATE517165T1 (de) Fluorenderivate
EP3579029A4 (fr) Film optique, plaque de polarisation et dispositif d'affichage d'image
TW200519810A (en) Electro-optical device, electronic equipment, and manufacturing method of electro-optical device
FR2891376B1 (fr) Dispositif d'affichage a cristaux liquides,procede pour fabriquer celui-ci et structure d'espaceur de dispositif d'affichage
TW200625625A (en) Thin film transistor, electro-optical device and electronic apparatus
ATE551839T1 (de) Stereoskopische anzeigevorrichtung
DE602005022708D1 (de) Mit mehreren seitenverhältnissen betreibbare abbildungseinrichtungen
EP2063314A3 (fr) Film optique et affichage à cristaux liquides doté de celui-ci
TW200632577A (en) Exposure device and manufacturing method of device
SG11201902647VA (en) Thin film affixing device
TW200611083A (en) Exposure system, exposing method, and device manufacturing method
TW200632478A (en) Substrate and liquid crystal display using it
EP3575381A4 (fr) Composition d'agent d'alignement de cristaux liquides, procédé de production d'un film d'alignement de cristaux liquides l'utilisant, film d'alignement de cristaux liquides l'utilisant et dispositif d'affichage à cristaux liquides
FR3037142B1 (fr) Dispositif de mesure de pression a fiabilite amelioree et procede de calibrage associe
FR3077423B1 (fr) Structure de manipulation pour amincir un substrat et procede d'amincissement d'un substrat utilisant une telle structure
TW200730981A (en) Thin film transistor array panel for liquid crystal display and manufacturing method thereof
CN104505371B (zh) 测试垫的形成方法及利用该测试垫进行阵列测试的方法

Legal Events

Date Code Title Description
PLFP Fee payment

Year of fee payment: 2

PLSC Publication of the preliminary search report

Effective date: 20190802

PLFP Fee payment

Year of fee payment: 3

PLFP Fee payment

Year of fee payment: 4

ST Notification of lapse

Effective date: 20220905