CN101150113A - 半导体器件和提高电熔断器的电阻值的方法 - Google Patents
半导体器件和提高电熔断器的电阻值的方法 Download PDFInfo
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- CN101150113A CN101150113A CNA2007100069083A CN200710006908A CN101150113A CN 101150113 A CN101150113 A CN 101150113A CN A2007100069083 A CNA2007100069083 A CN A2007100069083A CN 200710006908 A CN200710006908 A CN 200710006908A CN 101150113 A CN101150113 A CN 101150113A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 54
- 238000000034 method Methods 0.000 title claims description 39
- 230000004888 barrier function Effects 0.000 claims abstract description 24
- 230000008018 melting Effects 0.000 claims abstract description 24
- 238000002844 melting Methods 0.000 claims abstract description 24
- 239000010410 layer Substances 0.000 claims description 170
- 230000000694 effects Effects 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 17
- 239000010949 copper Substances 0.000 claims description 12
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000011229 interlayer Substances 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 2
- 238000007667 floating Methods 0.000 claims description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims 2
- 239000012212 insulator Substances 0.000 abstract description 3
- 239000011347 resin Substances 0.000 abstract 1
- 229920005989 resin Polymers 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 description 44
- 239000002184 metal Substances 0.000 description 44
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- 150000002736 metal compounds Chemical class 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 101150036540 Copb1 gene Proteins 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000004566 building material Substances 0.000 description 1
- 230000002301 combined effect Effects 0.000 description 1
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- 238000007796 conventional method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
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- 238000005516 engineering process Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H85/00—Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
- H01H85/02—Details
- H01H85/04—Fuses, i.e. expendable parts of the protective device, e.g. cartridges
- H01H85/041—Fuses, i.e. expendable parts of the protective device, e.g. cartridges characterised by the type
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- H01L23/00—Details of semiconductor or other solid state devices
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- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
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- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/528—Geometry or layout of the interconnection structure
- H01L23/5283—Cross-sectional geometry
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- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
- H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
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- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
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- H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
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- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
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- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/62—Protection against overvoltage, e.g. fuses, shunts
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Geometry (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
布线宽度(μm) | 布线厚度(nm) | |
精细层 | 0.12 | 200 |
半球形层 | 0.3 | 400 |
球形层 | 0.6 | 1000 |
线性膨胀系数(10-6/K) | 熔点(℃) | ||||
300K | 600K | 800K | 1000K | ||
Al | 23.2 | 28.4 | 34 | - | 660.4 |
Cu | 16.6 | 18.9 | 20.3 | 22.4 | 1084.5 |
Ta | 6.3 | - | - | 7.3 | 2996 |
Ti | 8.7 | 10.4 | 11.1 | 11.5 | 1675 |
W | 4.5 | 4.7 | 5 | 5.2 | 3387 |
在半导体领域中使用的氧化物膜或氮化物膜 | 0.5-10 | - | - | - | 约1000-1600 |
室温下的密度(g/cm3) | 液化金属密度(g/cm3) | 参考熔点(℃) | |
铝 | 2.69 | 2.5(800℃) | 660.4 |
铜 | 8.93 | 7.8(1200℃) | 1084.5 |
铁 | 7.86 | 7.1(1550℃) | 1535 |
材料 | 特定热量(kJ/(kgK)) | 熔点(℃) | 熔融的热量(kJ/kg) | 沸点(℃) | 蒸发热量(kJ/kg) | 电流(mA) | 体积电阻率(×10-8Ωm) | 布线膜厚度(μm) | 布线宽度(μm) | 布线长度(μm) | 密度(kg/m3) | 熔点到达时间(μs) |
Al | 1 | 660.4 | 311.3 | 2486 | 10888.9 | 15 | 2.7 | 0.2 | 0.1 | 8 | 2690 | 0.113 |
Cu | 0.47 | 1084.5 | 213 | 2580 | 4789 | 15 | 1.6 | 0.2 | 0.1 | 8 | 8500 | 0.470 |
Al | 1 | 660.4 | 311.3 | 2486 | 10888.9 | 30 | 2.7 | 0.2 | 0.1 | 8 | 2690 | 0.028 |
Cu | 0.47 | 1084.5 | 213 | 2580 | 4789 | 30 | 1.6 | 0.2 | 0.1 | 8 | 8500 | 0.118 |
Claims (15)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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JP061512/2006 | 2006-03-07 | ||
JP2006061512 | 2006-03-07 | ||
JP256226/2006 | 2006-09-21 | ||
JP2006256226A JP4959267B2 (ja) | 2006-03-07 | 2006-09-21 | 半導体装置および電気ヒューズの抵抗値の増加方法 |
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CN2011100484985A Division CN102157490A (zh) | 2006-03-07 | 2007-01-30 | 半导体器件和提高电熔断器的电阻值的方法 |
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CN101150113A true CN101150113A (zh) | 2008-03-26 |
CN101150113B CN101150113B (zh) | 2011-04-13 |
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CN2011100484985A Pending CN102157490A (zh) | 2006-03-07 | 2007-01-30 | 半导体器件和提高电熔断器的电阻值的方法 |
CN2007100069083A Active CN101150113B (zh) | 2006-03-07 | 2007-01-30 | 半导体器件和提高电熔断器的电阻值的方法 |
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Country Status (5)
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US (7) | US7745905B2 (zh) |
JP (1) | JP4959267B2 (zh) |
KR (1) | KR101354389B1 (zh) |
CN (2) | CN102157490A (zh) |
TW (1) | TWI408777B (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102104043A (zh) * | 2009-11-16 | 2011-06-22 | 瑞萨电子株式会社 | 半导体器件 |
CN102428563A (zh) * | 2009-05-22 | 2012-04-25 | 国际商业机器公司 | 形成用于集成电路的电断金属熔丝的结构和方法 |
CN107615440A (zh) * | 2015-06-04 | 2018-01-19 | 迪睿合株式会社 | 熔丝元件、熔丝器件、保护元件、短路元件、切换元件 |
CN108231616A (zh) * | 2016-12-09 | 2018-06-29 | 矢崎总业株式会社 | 电压检测构造和电压检测模块 |
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JP4127678B2 (ja) * | 2004-02-27 | 2008-07-30 | 株式会社東芝 | 半導体装置及びそのプログラミング方法 |
JP4959267B2 (ja) * | 2006-03-07 | 2012-06-20 | ルネサスエレクトロニクス株式会社 | 半導体装置および電気ヒューズの抵抗値の増加方法 |
JP4861051B2 (ja) * | 2006-05-09 | 2012-01-25 | ルネサスエレクトロニクス株式会社 | 半導体装置および電気ヒューズの切断方法 |
US7491585B2 (en) * | 2006-10-19 | 2009-02-17 | International Business Machines Corporation | Electrical fuse and method of making |
US8124971B2 (en) * | 2007-03-30 | 2012-02-28 | Sandisk 3D Llc | Implementation of diffusion barrier in 3D memory |
US7629253B2 (en) * | 2007-03-30 | 2009-12-08 | Sandisk 3D Llc | Method for implementing diffusion barrier in 3D memory |
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US8772156B2 (en) * | 2008-05-09 | 2014-07-08 | International Business Machines Corporation | Methods of fabricating interconnect structures containing various capping materials for electrical fuse and other related applications |
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-
2006
- 2006-09-21 JP JP2006256226A patent/JP4959267B2/ja active Active
- 2006-12-13 TW TW095146735A patent/TWI408777B/zh active
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2007
- 2007-01-30 CN CN2011100484985A patent/CN102157490A/zh active Pending
- 2007-01-30 CN CN2007100069083A patent/CN101150113B/zh active Active
- 2007-03-07 US US11/683,053 patent/US7745905B2/en active Active
- 2007-03-07 KR KR1020070022483A patent/KR101354389B1/ko active IP Right Grant
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- 2010-04-15 US US12/760,648 patent/US20100264514A1/en not_active Abandoned
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Cited By (8)
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CN102428563A (zh) * | 2009-05-22 | 2012-04-25 | 国际商业机器公司 | 形成用于集成电路的电断金属熔丝的结构和方法 |
CN102428563B (zh) * | 2009-05-22 | 2014-06-11 | 国际商业机器公司 | 形成用于集成电路的电断金属熔丝的结构和方法 |
CN102104043A (zh) * | 2009-11-16 | 2011-06-22 | 瑞萨电子株式会社 | 半导体器件 |
CN102104043B (zh) * | 2009-11-16 | 2015-09-02 | 瑞萨电子株式会社 | 半导体器件 |
CN107615440A (zh) * | 2015-06-04 | 2018-01-19 | 迪睿合株式会社 | 熔丝元件、熔丝器件、保护元件、短路元件、切换元件 |
CN107615440B (zh) * | 2015-06-04 | 2019-11-01 | 迪睿合株式会社 | 熔丝元件、熔丝器件、保护元件、短路元件、切换元件 |
CN108231616A (zh) * | 2016-12-09 | 2018-06-29 | 矢崎总业株式会社 | 电压检测构造和电压检测模块 |
CN108231616B (zh) * | 2016-12-09 | 2021-08-20 | 矢崎总业株式会社 | 电压检测构造和电压检测模块 |
Also Published As
Publication number | Publication date |
---|---|
KR101354389B1 (ko) | 2014-01-22 |
JP4959267B2 (ja) | 2012-06-20 |
CN101150113B (zh) | 2011-04-13 |
CN102157490A (zh) | 2011-08-17 |
US7745905B2 (en) | 2010-06-29 |
US20150303144A1 (en) | 2015-10-22 |
US20070210414A1 (en) | 2007-09-13 |
US20180138121A1 (en) | 2018-05-17 |
US20140021559A1 (en) | 2014-01-23 |
US20100264514A1 (en) | 2010-10-21 |
TW200739817A (en) | 2007-10-16 |
KR20070092161A (ko) | 2007-09-12 |
US20170040261A1 (en) | 2017-02-09 |
US9508641B2 (en) | 2016-11-29 |
US10923419B2 (en) | 2021-02-16 |
JP2007273940A (ja) | 2007-10-18 |
US20190378796A1 (en) | 2019-12-12 |
TWI408777B (zh) | 2013-09-11 |
US9893013B2 (en) | 2018-02-13 |
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