CN1881576A - 可再编程熔丝结构及方法 - Google Patents
可再编程熔丝结构及方法 Download PDFInfo
- Publication number
- CN1881576A CN1881576A CNA2006100918396A CN200610091839A CN1881576A CN 1881576 A CN1881576 A CN 1881576A CN A2006100918396 A CNA2006100918396 A CN A2006100918396A CN 200610091839 A CN200610091839 A CN 200610091839A CN 1881576 A CN1881576 A CN 1881576A
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- China
- Prior art keywords
- phase
- change material
- fuse
- via hole
- reprogrammable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 238000000034 method Methods 0.000 title claims description 20
- 239000012782 phase change material Substances 0.000 claims abstract description 85
- 239000000463 material Substances 0.000 claims abstract description 40
- 230000008859 change Effects 0.000 claims abstract description 11
- 230000002441 reversible effect Effects 0.000 claims abstract description 9
- 239000000203 mixture Substances 0.000 claims description 34
- 239000004020 conductor Substances 0.000 claims description 22
- 239000003989 dielectric material Substances 0.000 claims description 17
- 230000009977 dual effect Effects 0.000 claims description 9
- 230000009466 transformation Effects 0.000 claims description 9
- 238000002425 crystallisation Methods 0.000 claims description 8
- 230000008025 crystallization Effects 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 5
- 230000007704 transition Effects 0.000 claims description 3
- 208000019901 Anxiety disease Diseases 0.000 claims 1
- 230000036506 anxiety Effects 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 239000002178 crystalline material Substances 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 238000010791 quenching Methods 0.000 abstract 1
- 230000000171 quenching effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000010949 copper Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 150000004770 chalcogenides Chemical class 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000013100 final test Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 230000008439 repair process Effects 0.000 description 2
- 239000013049 sediment Substances 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 241001269238 Data Species 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
Images
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5252—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising anti-fuses, i.e. connections having their state changed from non-conductive to conductive
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
- H10N70/066—Shaping switching materials by filling of openings, e.g. damascene method
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/253—Multistable switching devices, e.g. memristors having three or more electrodes, e.g. transistor-like devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/861—Thermal details
- H10N70/8613—Heating or cooling means other than resistive heating electrodes, e.g. heater in parallel
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/861—Thermal details
- H10N70/8616—Thermal insulation means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/884—Switching materials based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Abstract
Description
Claims (33)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/152,750 US7388273B2 (en) | 2005-06-14 | 2005-06-14 | Reprogrammable fuse structure and method |
US11/152,750 | 2005-06-14 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1881576A true CN1881576A (zh) | 2006-12-20 |
CN100481435C CN100481435C (zh) | 2009-04-22 |
Family
ID=37519690
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2006100918396A Expired - Fee Related CN100481435C (zh) | 2005-06-14 | 2006-06-12 | 可再编程熔丝结构及方法 |
Country Status (2)
Country | Link |
---|---|
US (3) | US7388273B2 (zh) |
CN (1) | CN100481435C (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100590861C (zh) * | 2007-08-03 | 2010-02-17 | 国际商业机器公司 | 可编程通孔器件及其制造方法以及集成逻辑电路 |
CN104040711A (zh) * | 2012-01-11 | 2014-09-10 | 国际商业机器公司 | 后段电可编程熔断器 |
CN103839919B (zh) * | 2012-11-23 | 2018-09-14 | 中芯国际集成电路制造(上海)有限公司 | 电极的制造方法、熔丝装置及其制造方法 |
Families Citing this family (70)
Publication number | Priority date | Publication date | Assignee | Title |
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DE10349749B3 (de) * | 2003-10-23 | 2005-05-25 | Infineon Technologies Ag | Anti-Fuse-Verbindung für integrierte Schaltungen sowie Verfahren zur Herstellung von Anti-Fuse-Verbindungen |
US7388273B2 (en) | 2005-06-14 | 2008-06-17 | International Business Machines Corporation | Reprogrammable fuse structure and method |
US8183551B2 (en) | 2005-11-03 | 2012-05-22 | Agale Logic, Inc. | Multi-terminal phase change devices |
US7635855B2 (en) | 2005-11-15 | 2009-12-22 | Macronix International Co., Ltd. | I-shaped phase change memory cell |
US7449710B2 (en) | 2005-11-21 | 2008-11-11 | Macronix International Co., Ltd. | Vacuum jacket for phase change memory element |
US7545667B2 (en) * | 2006-03-30 | 2009-06-09 | International Business Machines Corporation | Programmable via structure for three dimensional integration technology |
US7646006B2 (en) | 2006-03-30 | 2010-01-12 | International Business Machines Corporation | Three-terminal cascade switch for controlling static power consumption in integrated circuits |
KR100791071B1 (ko) * | 2006-07-04 | 2008-01-02 | 삼성전자주식회사 | 일회 프로그래머블 소자, 이를 구비하는 전자시스템 및 그동작 방법 |
US20080019257A1 (en) * | 2006-07-18 | 2008-01-24 | Jan Boris Philipp | Integrated circuit with resistivity changing material having a step-like programming characteristitic |
US7634248B2 (en) * | 2006-08-01 | 2009-12-15 | Carnegie Mellon University | Configurable circuits using phase change switches |
US7394089B2 (en) * | 2006-08-25 | 2008-07-01 | International Business Machines Corporation | Heat-shielded low power PCM-based reprogrammable EFUSE device |
US7772581B2 (en) | 2006-09-11 | 2010-08-10 | Macronix International Co., Ltd. | Memory device having wide area phase change element and small electrode contact area |
US7652278B2 (en) * | 2006-12-19 | 2010-01-26 | International Business Machines Corporation | Programmable via structure and method of fabricating same |
US7718989B2 (en) | 2006-12-28 | 2010-05-18 | Macronix International Co., Ltd. | Resistor random access memory cell device |
US8004059B2 (en) * | 2007-01-12 | 2011-08-23 | International Business Machines Corporation | eFuse containing SiGe stack |
KR100871697B1 (ko) * | 2007-01-17 | 2008-12-08 | 삼성전자주식회사 | 열발산 구조를 포함하는 전기 퓨즈 |
US7411818B1 (en) * | 2007-02-07 | 2008-08-12 | International Business Machines Corporation | Programmable fuse/non-volatile memory structures using externally heated phase change material |
US7729161B2 (en) | 2007-08-02 | 2010-06-01 | Macronix International Co., Ltd. | Phase change memory with dual word lines and source lines and method of operating same |
US20090040006A1 (en) * | 2007-08-08 | 2009-02-12 | International Business Machines Corporation | Electrical fuse with enhanced programming current divergence |
US7633079B2 (en) * | 2007-09-06 | 2009-12-15 | International Business Machines Corporation | Programmable fuse/non-volatile memory structures in BEOL regions using externally heated phase change material |
US9058887B2 (en) * | 2007-10-30 | 2015-06-16 | International Business Machines Corporation | Reprogrammable electrical fuse |
US8077505B2 (en) | 2008-05-07 | 2011-12-13 | Macronix International Co., Ltd. | Bipolar switching of phase change device |
US8772156B2 (en) * | 2008-05-09 | 2014-07-08 | International Business Machines Corporation | Methods of fabricating interconnect structures containing various capping materials for electrical fuse and other related applications |
US7956466B2 (en) * | 2008-05-09 | 2011-06-07 | International Business Machines Corporation | Structure for interconnect structure containing various capping materials for electrical fuse and other related applications |
JP2010003916A (ja) * | 2008-06-20 | 2010-01-07 | Elpida Memory Inc | 半導体装置及びその製造方法 |
US8134857B2 (en) | 2008-06-27 | 2012-03-13 | Macronix International Co., Ltd. | Methods for high speed reading operation of phase change memory and device employing same |
KR100985184B1 (ko) * | 2008-07-23 | 2010-10-05 | 삼성전자주식회사 | 전기 소자 및 그 형성 방법 |
US8107283B2 (en) | 2009-01-12 | 2012-01-31 | Macronix International Co., Ltd. | Method for setting PCRAM devices |
US8030635B2 (en) | 2009-01-13 | 2011-10-04 | Macronix International Co., Ltd. | Polysilicon plug bipolar transistor for phase change memory |
US8064247B2 (en) | 2009-01-14 | 2011-11-22 | Macronix International Co., Ltd. | Rewritable memory device based on segregation/re-absorption |
US8933536B2 (en) | 2009-01-22 | 2015-01-13 | Macronix International Co., Ltd. | Polysilicon pillar bipolar transistor with self-aligned memory element |
US8885392B1 (en) * | 2009-02-27 | 2014-11-11 | Altera Corporation | RAM/ROM memory circuit |
US8084760B2 (en) | 2009-04-20 | 2011-12-27 | Macronix International Co., Ltd. | Ring-shaped electrode and manufacturing method for same |
US8173987B2 (en) | 2009-04-27 | 2012-05-08 | Macronix International Co., Ltd. | Integrated circuit 3D phase change memory array and manufacturing method |
US8097871B2 (en) | 2009-04-30 | 2012-01-17 | Macronix International Co., Ltd. | Low operational current phase change memory structures |
US7933139B2 (en) | 2009-05-15 | 2011-04-26 | Macronix International Co., Ltd. | One-transistor, one-resistor, one-capacitor phase change memory |
US7968876B2 (en) | 2009-05-22 | 2011-06-28 | Macronix International Co., Ltd. | Phase change memory cell having vertical channel access transistor |
US8350316B2 (en) | 2009-05-22 | 2013-01-08 | Macronix International Co., Ltd. | Phase change memory cells having vertical channel access transistor and memory plane |
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US8406033B2 (en) | 2009-06-22 | 2013-03-26 | Macronix International Co., Ltd. | Memory device and method for sensing and fixing margin cells |
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US7956671B2 (en) * | 2009-07-01 | 2011-06-07 | International Business Machines Corporation | Circuit structure and method for programming and re-programming a low power, multiple states, electronic fuse (e-fuse) |
US8198619B2 (en) | 2009-07-15 | 2012-06-12 | Macronix International Co., Ltd. | Phase change memory cell structure |
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DE60331625D1 (de) * | 2002-09-13 | 2010-04-22 | Ricoh Kk | Optisches Aufzeichnungsmedium |
US6879505B2 (en) * | 2003-03-31 | 2005-04-12 | Matrix Semiconductor, Inc. | Word line arrangement having multi-layer word line segments for three-dimensional memory array |
US7177183B2 (en) * | 2003-09-30 | 2007-02-13 | Sandisk 3D Llc | Multiple twin cell non-volatile memory array and logic block structure and method therefor |
US7298665B2 (en) * | 2004-12-30 | 2007-11-20 | Sandisk 3D Llc | Dual-mode decoder circuit, integrated circuit memory array incorporating same, and related methods of operation |
US7359279B2 (en) * | 2005-03-31 | 2008-04-15 | Sandisk 3D Llc | Integrated circuit memory array configuration including decoding compatibility with partial implementation of multiple memory layers |
US7272052B2 (en) * | 2005-03-31 | 2007-09-18 | Sandisk 3D Llc | Decoding circuit for non-binary groups of memory line drivers |
US7142471B2 (en) * | 2005-03-31 | 2006-11-28 | Sandisk 3D Llc | Method and apparatus for incorporating block redundancy in a memory array |
US7388273B2 (en) * | 2005-06-14 | 2008-06-17 | International Business Machines Corporation | Reprogrammable fuse structure and method |
-
2005
- 2005-06-14 US US11/152,750 patent/US7388273B2/en not_active Expired - Fee Related
-
2006
- 2006-06-12 CN CNB2006100918396A patent/CN100481435C/zh not_active Expired - Fee Related
-
2007
- 2007-08-23 US US11/844,109 patent/US7960808B2/en active Active
-
2011
- 2011-05-04 US US13/100,456 patent/US8278155B2/en active Active
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100590861C (zh) * | 2007-08-03 | 2010-02-17 | 国际商业机器公司 | 可编程通孔器件及其制造方法以及集成逻辑电路 |
CN104040711A (zh) * | 2012-01-11 | 2014-09-10 | 国际商业机器公司 | 后段电可编程熔断器 |
US9685404B2 (en) | 2012-01-11 | 2017-06-20 | International Business Machines Corporation | Back-end electrically programmable fuse |
US9893011B2 (en) | 2012-01-11 | 2018-02-13 | International Business Machines Corporation | Back-end electrically programmable fuse |
CN103839919B (zh) * | 2012-11-23 | 2018-09-14 | 中芯国际集成电路制造(上海)有限公司 | 电极的制造方法、熔丝装置及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
US7388273B2 (en) | 2008-06-17 |
US20060278895A1 (en) | 2006-12-14 |
US7960808B2 (en) | 2011-06-14 |
US20110207286A1 (en) | 2011-08-25 |
US20070290233A1 (en) | 2007-12-20 |
CN100481435C (zh) | 2009-04-22 |
US8278155B2 (en) | 2012-10-02 |
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