CN100533596C - 半导体器件 - Google Patents

半导体器件 Download PDF

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Publication number
CN100533596C
CN100533596C CNB2005100093026A CN200510009302A CN100533596C CN 100533596 C CN100533596 C CN 100533596C CN B2005100093026 A CNB2005100093026 A CN B2005100093026A CN 200510009302 A CN200510009302 A CN 200510009302A CN 100533596 C CN100533596 C CN 100533596C
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CN
China
Prior art keywords
mos transistor
voltage
memory
circuit
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2005100093026A
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English (en)
Chinese (zh)
Other versions
CN1658328A (zh
Inventor
长田健一
竹村理一郎
高浦则克
松崎望
河原尊之
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Renesas Electronics Corp
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Renesas Technology Corp
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Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Publication of CN1658328A publication Critical patent/CN1658328A/zh
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Publication of CN100533596C publication Critical patent/CN100533596C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/004—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0033—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0064—Verifying circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0092—Write characterized by the shape, e.g. form, length, amplitude of the write pulse
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/82—Array having, for accessing a cell, a word line, a bit line and a plate or source line receiving different potentials

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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
CNB2005100093026A 2004-02-20 2005-02-18 半导体器件 Expired - Fee Related CN100533596C (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2004043948 2004-02-20
JP2004043948 2004-02-20
JP2005001979A JP4646636B2 (ja) 2004-02-20 2005-01-07 半導体装置
JP2005001979 2005-01-07

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN2009101513831A Division CN101587746B (zh) 2004-02-20 2005-02-18 半导体器件

Publications (2)

Publication Number Publication Date
CN1658328A CN1658328A (zh) 2005-08-24
CN100533596C true CN100533596C (zh) 2009-08-26

Family

ID=34863502

Family Applications (2)

Application Number Title Priority Date Filing Date
CNB2005100093026A Expired - Fee Related CN100533596C (zh) 2004-02-20 2005-02-18 半导体器件
CN2009101513831A Expired - Fee Related CN101587746B (zh) 2004-02-20 2005-02-18 半导体器件

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN2009101513831A Expired - Fee Related CN101587746B (zh) 2004-02-20 2005-02-18 半导体器件

Country Status (5)

Country Link
US (2) US7206216B2 (OSRAM)
JP (1) JP4646636B2 (OSRAM)
KR (2) KR101109883B1 (OSRAM)
CN (2) CN100533596C (OSRAM)
TW (1) TW200534469A (OSRAM)

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KR100498493B1 (ko) * 2003-04-04 2005-07-01 삼성전자주식회사 저전류 고속 상변화 메모리 및 그 구동 방식
JP4646636B2 (ja) * 2004-02-20 2011-03-09 ルネサスエレクトロニクス株式会社 半導体装置
DE602005024840D1 (de) * 2004-09-30 2010-12-30 Nxp Bv Integrierte schaltung mit speicherzellen mit einem programmierbaren widerstand und verfahren zum adressieren von speicherzellen mit einem programmierbaren widerstand
KR100657944B1 (ko) * 2005-01-12 2006-12-14 삼성전자주식회사 상전이 램 동작 방법
US7453715B2 (en) 2005-03-30 2008-11-18 Ovonyx, Inc. Reading a phase change memory
US8036013B2 (en) * 2005-03-30 2011-10-11 Ovonyx, Inc. Using higher current to read a triggered phase change memory
US20060284156A1 (en) * 2005-06-16 2006-12-21 Thomas Happ Phase change memory cell defined by imprint lithography
US7460389B2 (en) * 2005-07-29 2008-12-02 International Business Machines Corporation Write operations for phase-change-material memory
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JP4901763B2 (ja) * 2006-02-02 2012-03-21 ルネサスエレクトロニクス株式会社 半導体装置
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Also Published As

Publication number Publication date
US20050185445A1 (en) 2005-08-25
KR101149273B1 (ko) 2012-05-25
US7385838B2 (en) 2008-06-10
TWI359491B (OSRAM) 2012-03-01
KR20060042055A (ko) 2006-05-12
US7206216B2 (en) 2007-04-17
CN101587746B (zh) 2011-01-26
KR20110090861A (ko) 2011-08-10
JP4646636B2 (ja) 2011-03-09
KR101109883B1 (ko) 2012-03-13
CN101587746A (zh) 2009-11-25
US20070159871A1 (en) 2007-07-12
CN1658328A (zh) 2005-08-24
TW200534469A (en) 2005-10-16
JP2005267837A (ja) 2005-09-29

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