CN100401144C - 包括用于减少泄漏电流的tft的lcd设备 - Google Patents
包括用于减少泄漏电流的tft的lcd设备 Download PDFInfo
- Publication number
- CN100401144C CN100401144C CNB2004100576544A CN200410057654A CN100401144C CN 100401144 C CN100401144 C CN 100401144C CN B2004100576544 A CNB2004100576544 A CN B2004100576544A CN 200410057654 A CN200410057654 A CN 200410057654A CN 100401144 C CN100401144 C CN 100401144C
- Authority
- CN
- China
- Prior art keywords
- tft
- composition
- source electrode
- raceway groove
- drain electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
Abstract
Description
Claims (15)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP297575/2003 | 2003-08-21 | ||
JP2003297575A JP4593094B2 (ja) | 2003-08-21 | 2003-08-21 | 液晶表示装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1584718A CN1584718A (zh) | 2005-02-23 |
CN100401144C true CN100401144C (zh) | 2008-07-09 |
Family
ID=34191185
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2004100576544A Active CN100401144C (zh) | 2003-08-21 | 2004-08-23 | 包括用于减少泄漏电流的tft的lcd设备 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7460190B2 (zh) |
JP (1) | JP4593094B2 (zh) |
KR (1) | KR100722725B1 (zh) |
CN (1) | CN100401144C (zh) |
TW (1) | TWI248547B (zh) |
Cited By (1)
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CN106373966A (zh) * | 2016-09-27 | 2017-02-01 | 上海中航光电子有限公司 | 阵列基板、显示面板及显示装置 |
Families Citing this family (43)
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US7372528B2 (en) * | 2003-06-09 | 2008-05-13 | Samsung Electronics Co., Ltd. | Array substrate, method of manufacturing the same and liquid crystal display apparatus having the same |
JP4221314B2 (ja) | 2004-02-10 | 2009-02-12 | Nec液晶テクノロジー株式会社 | 薄膜トランジスタとそれを用いた液晶表示装置およびその薄膜トランジスタの製造方法 |
TWI240950B (en) * | 2004-03-26 | 2005-10-01 | Chi Mei Optoelectronics Corp | Thin film transistor, thin film transistor substrate, and methods for manufacturing the same |
JP2006352083A (ja) * | 2005-05-18 | 2006-12-28 | Ricoh Co Ltd | 有機薄膜トランジスタ及びアクティブマトリックス表示装置 |
CN1949080B (zh) * | 2005-10-13 | 2010-05-12 | 群康科技(深圳)有限公司 | 薄膜晶体管的制造装置和制造方法 |
US8149346B2 (en) | 2005-10-14 | 2012-04-03 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
KR101211255B1 (ko) * | 2005-11-10 | 2012-12-11 | 엘지디스플레이 주식회사 | 액정패널 및 그 제조 방법 |
US20070229722A1 (en) * | 2006-04-03 | 2007-10-04 | Wen-Hsiung Liu | Pixel structure and liquid crystal display panel thereof |
US7411213B2 (en) * | 2006-04-03 | 2008-08-12 | Chunghwa Picture Tubes, Ltd. | Pixel structure, thin film transistor array substrate and liquid crystal display panel |
TWI328878B (en) * | 2006-09-15 | 2010-08-11 | Au Optronics Corp | Electrode structure of a transistor, and pixel structure and display apparatus comprising the same |
KR20080028640A (ko) | 2006-09-27 | 2008-04-01 | 삼성전자주식회사 | 박막 트랜지스터 제조용 마스크, 이에 의해 제조된 박막트랜지스터 기판 및 이를 이용한 박막 트랜지스터 기판의제조방법 |
CN101382728B (zh) * | 2007-09-07 | 2010-07-28 | 北京京东方光电科技有限公司 | 灰阶掩膜版结构 |
CN101387825B (zh) * | 2007-09-10 | 2011-04-06 | 北京京东方光电科技有限公司 | 补偿型灰阶掩膜版结构 |
JP5432445B2 (ja) * | 2007-11-30 | 2014-03-05 | 三菱電機株式会社 | 薄膜トランジスタの製造方法,及び薄膜トランジスタ製造用のフォトマスク |
JP2009147001A (ja) * | 2007-12-12 | 2009-07-02 | Seiko Instruments Inc | 半導体装置 |
TWI491048B (zh) * | 2008-07-31 | 2015-07-01 | Semiconductor Energy Lab | 半導體裝置 |
TWI412855B (zh) | 2009-04-09 | 2013-10-21 | Wintek Corp | 液晶顯示裝置及其驅動方法 |
TWI411112B (zh) * | 2009-12-18 | 2013-10-01 | Ind Tech Res Inst | 薄膜電晶體裝置及其製造方法 |
JP5977523B2 (ja) * | 2011-01-12 | 2016-08-24 | 株式会社半導体エネルギー研究所 | トランジスタの作製方法 |
CN102655095B (zh) * | 2011-06-01 | 2014-10-15 | 京东方科技集团股份有限公司 | 薄膜晶体管及阵列基板的制造方法 |
CN102655175B (zh) * | 2012-04-06 | 2014-07-02 | 京东方科技集团股份有限公司 | Tft、阵列基板及显示装置、制备该tft的掩模板 |
JP2014067884A (ja) * | 2012-09-26 | 2014-04-17 | Toppan Printing Co Ltd | 薄膜トランジスタおよびその製造方法 |
US20150022211A1 (en) * | 2013-07-19 | 2015-01-22 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Detection circuit for display panel |
CN104409509A (zh) * | 2014-10-20 | 2015-03-11 | 深圳市华星光电技术有限公司 | 薄膜晶体管 |
TWI567950B (zh) * | 2015-01-08 | 2017-01-21 | 群創光電股份有限公司 | 顯示面板 |
CN104576761B (zh) * | 2015-02-06 | 2018-05-08 | 合肥京东方光电科技有限公司 | 薄膜晶体管及其制造方法、显示基板和显示装置 |
KR102378211B1 (ko) * | 2015-06-23 | 2022-03-25 | 삼성디스플레이 주식회사 | 마스크 및 이를 이용한 표시장치의 제조방법 |
CN104916651B (zh) * | 2015-07-07 | 2018-06-15 | 京东方科技集团股份有限公司 | 阵列基板和显示装置 |
CN105931995B (zh) * | 2016-04-29 | 2018-11-23 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法 |
CN106252363B (zh) * | 2016-09-29 | 2020-11-03 | 上海中航光电子有限公司 | 阵列基板、显示面板及显示装置 |
KR102455711B1 (ko) * | 2016-12-02 | 2022-10-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
CN106950771B (zh) * | 2017-03-31 | 2019-12-24 | 京东方科技集团股份有限公司 | 一种阵列基板、显示面板及显示装置 |
CN106847931A (zh) * | 2017-04-05 | 2017-06-13 | 厦门天马微电子有限公司 | 一种薄膜晶体管、阵列基板及显示装置 |
TWI613496B (zh) * | 2017-05-08 | 2018-02-01 | 友達光電股份有限公司 | 薄膜電晶體及其形成方法與應用其之畫素結構 |
JPWO2018216086A1 (ja) * | 2017-05-22 | 2020-03-26 | 堺ディスプレイプロダクト株式会社 | 表示パネルおよび表示装置 |
CN107591416B (zh) * | 2017-08-29 | 2020-04-14 | 惠科股份有限公司 | 一种阵列基板的制造方法和阵列基板 |
CN109870860B (zh) * | 2017-12-05 | 2021-10-26 | 瀚宇彩晶股份有限公司 | 像素结构 |
CN108183125B (zh) * | 2017-12-28 | 2020-12-29 | 武汉华星光电半导体显示技术有限公司 | 有机发光二极管显示面板 |
US10446632B2 (en) * | 2017-12-28 | 2019-10-15 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Organic light-emitting diode display panel |
KR102623339B1 (ko) * | 2018-07-17 | 2024-01-11 | 삼성디스플레이 주식회사 | 화소 및 그것을 포함하는 유기 발광 표시 장치 |
CN111129037B (zh) * | 2019-12-25 | 2022-09-09 | Tcl华星光电技术有限公司 | Tft阵列基板及其制作方法 |
TWI727752B (zh) * | 2020-04-21 | 2021-05-11 | 友達光電股份有限公司 | 主動元件 |
US11527555B2 (en) * | 2021-03-30 | 2022-12-13 | Innolux Corporation | Driving substrate and electronic device with a thin film transistor that is divided into multiple active blocks |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2283127A (en) * | 1993-09-10 | 1995-04-26 | Philips Electronics Uk Ltd | Thin-film transistors with reduced leakage |
US5563432A (en) * | 1993-04-23 | 1996-10-08 | Kabushiki Kaisha Toshiba | Thin-film transistor and display device using the same |
JPH10232409A (ja) * | 1996-12-18 | 1998-09-02 | Nec Corp | 薄膜トランジスタアレイ基板およびその製造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02216870A (ja) * | 1989-02-16 | 1990-08-29 | Mitsubishi Electric Corp | 薄膜トランジスタ |
JP3373620B2 (ja) * | 1993-10-21 | 2003-02-04 | 株式会社東芝 | 液晶表示装置 |
US5610737A (en) * | 1994-03-07 | 1997-03-11 | Kabushiki Kaisha Toshiba | Thin film transistor with source and drain regions having two semiconductor layers, one being fine crystalline silicon |
KR20010005298A (ko) | 1999-06-30 | 2001-01-15 | 김영환 | 반도체소자의 트랜지스터 |
JP2001324725A (ja) * | 2000-05-12 | 2001-11-22 | Hitachi Ltd | 液晶表示装置およびその製造方法 |
JP2002141512A (ja) * | 2000-11-06 | 2002-05-17 | Advanced Display Inc | 薄膜のパターニング方法およびそれを用いたtftアレイ基板およびその製造方法 |
JP2002261423A (ja) * | 2001-03-05 | 2002-09-13 | Murata Mfg Co Ltd | 配線形成方法及びそれを用いて製造した電子部品 |
JP2003068755A (ja) * | 2001-08-22 | 2003-03-07 | Sharp Corp | 薄膜トランジスタ及びその製造方法 |
-
2003
- 2003-08-21 JP JP2003297575A patent/JP4593094B2/ja not_active Expired - Lifetime
-
2004
- 2004-08-20 US US10/923,432 patent/US7460190B2/en active Active
- 2004-08-20 TW TW093125113A patent/TWI248547B/zh active
- 2004-08-21 KR KR1020040066160A patent/KR100722725B1/ko active IP Right Grant
- 2004-08-23 CN CNB2004100576544A patent/CN100401144C/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5563432A (en) * | 1993-04-23 | 1996-10-08 | Kabushiki Kaisha Toshiba | Thin-film transistor and display device using the same |
GB2283127A (en) * | 1993-09-10 | 1995-04-26 | Philips Electronics Uk Ltd | Thin-film transistors with reduced leakage |
JPH10232409A (ja) * | 1996-12-18 | 1998-09-02 | Nec Corp | 薄膜トランジスタアレイ基板およびその製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106373966A (zh) * | 2016-09-27 | 2017-02-01 | 上海中航光电子有限公司 | 阵列基板、显示面板及显示装置 |
CN106373966B (zh) * | 2016-09-27 | 2020-03-13 | 上海中航光电子有限公司 | 阵列基板、显示面板及显示装置 |
Also Published As
Publication number | Publication date |
---|---|
US7460190B2 (en) | 2008-12-02 |
TWI248547B (en) | 2006-02-01 |
CN1584718A (zh) | 2005-02-23 |
JP2005072135A (ja) | 2005-03-17 |
KR100722725B1 (ko) | 2007-05-29 |
JP4593094B2 (ja) | 2010-12-08 |
TW200512526A (en) | 2005-04-01 |
US20050041169A1 (en) | 2005-02-24 |
KR20050021252A (ko) | 2005-03-07 |
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C06 | Publication | ||
PB01 | Publication | ||
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
ASS | Succession or assignment of patent right |
Owner name: NIPPON ELECTRIC CO., LTD. Free format text: FORMER OWNER: NEC LCD TECHNOLOGY CO.,LTD Effective date: 20100610 |
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C41 | Transfer of patent application or patent right or utility model | ||
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Free format text: CORRECT: ADDRESS; FROM: KANAGAWA-KEN, JAPAN TO: TOKYO, JAPAN |
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TR01 | Transfer of patent right |
Effective date of registration: 20100610 Address after: Tokyo, Japan Patentee after: NEC Corp. Address before: Kanagawa, Japan Patentee before: NEC LCD Technologies, Ltd. |
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Owner name: JINZHEN CO., LTD. Free format text: FORMER OWNER: NEC CORP. Effective date: 20130327 |
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C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20130327 Address after: Samoa Apia hiSoft Center No. 217 mailbox Patentee after: Jinzhen Co.,Ltd. Address before: Tokyo, Japan Patentee before: NEC Corp. |
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TR01 | Transfer of patent right |
Effective date of registration: 20230515 Address after: Floor 4, No. 15, Lane 168, Xingshan Road, Neihu District, Taipei City, Taiwan, China, 114762, China Patentee after: HANNSTAR DISPLAY Corp. Address before: PO Box 217, Haihui Center, Apia, Samoa Patentee before: Jinzhen Co.,Ltd. |
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TR01 | Transfer of patent right |