CN101382728B - 灰阶掩膜版结构 - Google Patents

灰阶掩膜版结构 Download PDF

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CN101382728B
CN101382728B CN2007101215316A CN200710121531A CN101382728B CN 101382728 B CN101382728 B CN 101382728B CN 2007101215316 A CN2007101215316 A CN 2007101215316A CN 200710121531 A CN200710121531 A CN 200710121531A CN 101382728 B CN101382728 B CN 101382728B
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CN101382728A (zh
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董敏
刘圣烈
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BOE Technology Group Co Ltd
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Beijing BOE Optoelectronics Technology Co Ltd
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    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
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    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
    • G—PHYSICS
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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Abstract

本发明涉及一种灰阶掩膜版结构，包括掩膜版，所述掩膜版上设置有可掩膜出源极的源极区域和可掩膜出漏极的漏极区域，以及在所述源极区域与所述漏极区域之间的沟道区域，在所述沟道区域内均匀设置有数个挡光条，所述挡光条与所述沟道区域的中心线垂直。采用本发明所提供的灰阶掩膜版结构进行曝光工艺，由于存在多个狭缝使光发生多重干涉，使挡光条下的光刻胶得到均匀度较高的光强，减小光刻胶表面突起的数量与突起的尺寸，从而获得一定高度的且均匀度较高的光刻胶表面，灰化后进而进行二次刻蚀，改善了掩膜工艺的均匀性问题，降低了由于均匀性不良而出现源/漏层短路等问题的几率，获得性能优良的薄膜晶体管源/漏层沟道。

Description

灰阶掩膜版结构
技术领域
本发明涉及一种灰阶掩膜版结构，尤其是一种应用于四次掩膜工艺，在制备源/漏层(Source/Drain；以下简称：S/D层)过程中改善光刻胶均匀性的灰阶掩膜版结构。
背景技术
目前，在液晶面板的生产过程中，四次掩膜工艺由于对比五次掩膜工艺减少了一道掩膜工序，缩短了工艺周期，因而被广泛应用。其将五次掩膜工艺中的制备有源层和源/漏层合并为一道掩膜工序，通过狭缝/挡光条的组合形成一定高度的灰阶光刻胶，再通过两次刻蚀形成沟道。如图9所示，目前S/D层制造过程曝光工艺使所用的灰阶掩膜版，其上设置有可掩膜出源极的源极区域20和可掩膜出漏极的漏极区域10，源极区域20的端部位于漏极区域10“U”形状内，形成“U”形沟道区域，并在形成的沟道区域中沿沟道方向设置挡光条60，所述挡光条与源极区域20、漏极区域10之间形成狭缝50’，由于双缝干涉原理，在进行曝光工艺时，可在沟道区域对应位置形成较为平整的灰阶光刻胶(指高度与源/漏极光刻胶的高度成一定比例的光刻胶，例如比例为1/2)，进而在灰化后能够进行二次刻蚀，获得需要的沟道表面。
但是，应用沿“U”形沟道结构方向设置挡光条的掩膜版进行S/D层曝光工艺时，通过双缝干涉得到的光的强度分布如图10中所示，虽然最终获得了灰阶光刻胶表面，但由于双缝透过的光强度的不均匀性，使得在“U”形沟道中的沟道拐角部分、沟道中心及边缘部分容易存在光刻胶厚度的差异，所以仍然容易造成此处光刻胶表面出现较多的突起，导致沟道的有源层残留或S/D层短路等不良现象的发生。
发明内容
本发明的实施例提供一种灰阶掩膜版结构，用以改善现有掩膜版结构制造S/D层的光刻胶突起的问题，使S/D层获得均匀性较好的沟道。
本发明通过一些实施例提供了如下的技术方案：
一种灰阶掩膜版结构，包括掩膜版，所述掩膜版上设置有可掩膜出源极的源极区域和可掩膜出漏极的漏极区域，以及在所述源极区域与所述漏极区域之间的沟道区域，在所述沟道区域内均匀设置有数个挡光条，所述挡光条与所述沟道区域的中心线垂直。
采用本发明实施例所提供的灰阶掩膜版用于进行S/D层曝光工艺，由于存在多个狭缝使光发生多重干涉，使挡光条下的光刻胶得到均匀度较高的光强，减小光刻胶表面突起的数量与突起的尺寸，从而获得一定高度的且均匀度较高的光刻胶表面，灰化后进而进行二次刻蚀，改善了掩膜工艺的均匀性问题，降低由于均匀性不良而出现S/D层短路等问题的几率，获得性能优良的薄膜晶体管S/D层沟道。
下面结合附图和具体实施例进一步说明本发明的技术方案。
附图说明
图1为本发明U形状灰阶掩膜版结构示意图；
图2为本发明U形状灰阶掩膜版结构接收光强示意图；
图3为本发明平行状灰阶掩膜版结构示意图；
图4-8为制造本发明灰阶掩膜版工艺流程示意图；
图9为现有U形状灰阶掩膜版结构示意图；
图10为现有U形状灰阶掩膜版结构接收光强示意图。
具体实施方式
图1为本发明U形状灰阶掩膜版结构的示意图，包括掩膜版，掩膜版上设置有可掩膜出源极的源极区域20和可掩膜出漏极的漏极区域10，以及在源极区域20与漏极区域10之间的沟道区域30，在沟道区域30内均匀设置有数个挡光条40，挡光条40与沟道区域30的中心线垂直。
在掩膜工艺中，源极区域20与漏极区域10分别用于掩膜形成源极和漏极，沿垂直于沟道结构30中心线的方向均匀设置数个挡光条40，各个挡光条之间形成狭缝50。当光透过狭缝时，众多光束发生多重干涉，由于挡光条均匀设置，因此在狭缝50以及挡光条40的下方将得到强度均匀的光照，如图2所示，得到均匀平整的且具有一定高度的光刻胶表面，所述高度为源极区域与漏极区域光刻胶高度的一定比例(低于源极区域与漏极区域光刻胶高度)；然后可灰化后进行二次刻蚀，得到S/D层沟道，最终挡光条下的光刻胶表面的均匀度决定了刻蚀后S/D层沟道表面的均匀度。与现有应用沿沟道方向设置挡光条的掩膜版形成S/D层相比，采用本发明实施例所提供的灰阶掩膜版进行曝光的过程中，由于存在多个狭缝使光发生多重干涉，使挡光条下的光刻胶得到均匀度较高的光照，减小光刻胶表面突起的数量与突起的尺寸，从而获得一定高度的且均匀度较高的光刻胶表面，灰化后进而进行二次刻蚀，改善了掩膜工艺的均匀性问题，降低了由于均匀性不良而出现S/D层短路等问题的几率，获得性能优良的S/D层沟道。
在本发明上述技术方案基础上，可以将挡光条设置成条形状，保证光在发生多重干涉后形成具有较高的均匀度。进一步地，为了避免由于挡光条的端部与源极区域、漏极区域接触面较大而产生光照死角，可将挡光条的端部设置成尖角形状或梯形形状，即挡光条的端部与源极区域、漏极区域以角度形式连接，使得挡光条的端部与源极区域、漏极区域以较少面积接触。这样即使光刻胶表面出现突起，但由于多个挡光条的设置使光刻胶突起呈离散分布，并且由于挡光条的端部与源极区域、漏极区域以角度相接，确保后续形成的S/D残留与源/漏极是不接触的，进一步降低了S/D层短路现象的发生，获得均匀性较好的沟道结构。
如图1所示，本发明U形状灰阶掩膜版结构的漏极区域10为U形状，源极区域20的端部为矩形状，源极区域20的端部伸入U形状漏极区域10内，使源极区域20与U形状漏极区域10的两边内侧边形成沟道区域30，在沟道区域30内设置数个挡光条40，挡光条40与沟道区域30的中心线垂直。挡光条40的端部与源极区域10、漏极区域20接触形成的角度φ为20°～70°，挡光条的宽度a为1～3μm，各挡光条均匀设置，且间距b为1～3μm；其优选实施方式为挡光条与狭缝等宽设置。
图3为本发明平行状灰阶掩膜版结构示意图，漏极区域10和源极区域20均为矩形状，漏极区域10和源极区域20的相邻边之间形成沟道区域30，垂直于漏极区域10和源极区域20的相邻边方向，设置数个挡光条40。挡光条40的端部与漏极区域10、源极区域20接触形成的角度φ为20°～70°，挡光条的宽度a为1～3μm，各挡光条均匀设置，且间距b为1～3μm；其优选实施方式为挡光条与狭缝等宽设置。
具有U形结构的灰阶掩膜版可以通过下面的方法制造：
首先，如图4所示，使用磁控溅射方法，在玻璃基板1上沉积一层金属薄膜2，所述金属材料通常使用铬(Cr)；
然后，如图5所示，在金属薄膜2上涂敷光刻胶3，利用激光照射使光刻胶形成具有特定形状的图形，如图6所示，图6为掩膜版的俯视图，光刻胶图形包括以下图形区域：光刻胶漏极区域10’和光刻胶源极区域20’，光刻胶源极区域20’与光刻胶漏极区域10’之间的光刻胶沟道区域30’，以及光刻胶沟道区域30’内的数个光刻胶挡光条区域40’，并将光刻胶挡光条区域40’与光刻胶沟道区域30’的中心线垂直设置；
接下来，如图7所示，通过刻蚀工艺，使得仅在具有特定图形的光刻胶3下方保留金属层；
最后，如图8所示，通过剥离工艺，将玻璃基板1上的光刻胶3剥离掉，形成掩膜版，包括可掩膜出漏极的漏极区域10和可掩膜出源极的源极区域20，源极区域20与漏极区域10之间的沟道区域30，以及沟道区域30内的数个挡光条40，并将挡光条40与沟道区域30的中心线垂直设置。
制备平行状灰阶掩膜版工艺流程与上述制备U形状灰阶掩膜版的工艺流程相似，仅在形成有特定形状的光刻胶的流程上有所不同，可按照要求将光刻胶制备成相应形状即可。
最后应说明的是：以上实施例仅用以说明本发明的技术方案，而非对其限制；尽管参照前述实施例对本发明进行了详细的说明，本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例技术方案的精神和范围。

Claims (7)

1.一种灰阶掩膜版结构，包括掩膜版，所述掩膜版上设置有可掩膜出源极的源极区域和可掩膜出漏极的漏极区域，以及在所述源极区域与所述漏极区域之间的沟道区域，其特征在于：在所述沟道区域内均匀设置有数个挡光条，所述挡光条与所述沟道区域的中心线垂直。
2.根据权利要求1所述的灰阶掩膜版结构，其特征在于：与所述源极区域和漏极区域接触的所述挡光条的端部为尖角或梯形形状。
3.根据权利要求2所述的灰阶掩膜版结构，其特征在于：所述挡光条的具有尖角或梯形形状的端部与所述源极区域、漏极区域之间形成的角度为20°～70°。
4.根据权利要求1所述的灰阶掩膜版结构，其特征在于：所述挡光条宽度为1～3μm。
5.根据权利要求1所述的灰阶掩膜版结构，其特征在于：所述挡光条的间距为1～3μm。
6.根据权利要求1至5所述的任一灰阶掩膜版结构，其特征在于：所述漏极区域为U形状，矩形状的源极区域端部位于所述U形状内。
7.根据权利要求1至5所述的任一灰阶掩膜版结构，其特征在于：所述源极区域和漏极区域为矩形状。
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