CN101387825B - 补偿型灰阶掩膜版结构 - Google Patents

补偿型灰阶掩膜版结构 Download PDF

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CN101387825B
CN101387825B CN2007101215551A CN200710121555A CN101387825B CN 101387825 B CN101387825 B CN 101387825B CN 2007101215551 A CN2007101215551 A CN 2007101215551A CN 200710121555 A CN200710121555 A CN 200710121555A CN 101387825 B CN101387825 B CN 101387825B
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CN101387825A (zh
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吕敬
崔承镇
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BOE Technology Group Co Ltd
Gaochuang Suzhou Electronics Co Ltd
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Beijing BOE Optoelectronics Technology Co Ltd
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    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259Multistep manufacturing methods
    • H01L27/1288Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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    • G03F1/26Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
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    • G03F1/36Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
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    • G03F1/00Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007Multistep manufacturing processes
    • H01L29/66075Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409Unipolar field-effect transistors
    • H01L29/66477Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742Thin film unipolar transistors

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Abstract

本发明涉及一种补偿型灰阶掩膜版结构,包括掩膜版,所述掩膜版上设置有U形状的源极区域,矩形状端部位于所述源极区域内的漏极区域,以及位于所述源极区域与漏极区域之间的U形状的阻碍条,所述源极区域与阻碍条之间、所述阻碍条与漏极区域之间形成缝隙,本发明通过在源极区域端部的内侧设置补偿区域,有效补偿了现有技术的沟道侵蚀缺陷。本发明结构简单,易于实现,不需增加成本,能有效改进现有TFT的性能。

Description

补偿型灰阶掩膜版结构 
技术领域
本发明涉及一种灰阶掩膜版结构,尤其是一种缝隙/阻碍条的补偿型灰阶掩膜版结构。 
背景技术
目前,在薄膜晶体管液晶显示器阵列(TFT LCD Array)的制造工艺过程中,为了缩短工艺周期,节约生产时间,四次掩膜(4Mask)被广泛应用。目前量产中四次掩膜实现的方式为将有源层(Active)和源漏极(S/D)作为一次掩膜,在多层薄膜(Multi Layer)和源漏极层(S/D Layer)沉积之后,用缝隙/阻碍条(Slit/Bar)结构的掩膜实现灰阶掩膜(Gray Tone Mask),以将原来这两层的两次掩膜工序减少为一次掩膜工序,其缝隙/阻碍条结构的掩膜版形状如图8所示。 
由图8可以看出,现有的带缝隙/阻碍条结构的掩膜版包括源极区域1和漏极区域2,以及源极区域1和漏极区域2之间设置的阻碍条4,这种结构使得源极区域1和阻碍条4、漏极区域2和阻碍条4之间形成缝隙5。实际生产表明,现有技术这种缝隙/阻碍条结构的掩膜版最大的缺点,是在进行灰阶掩膜工艺的时候往往会使灰阶区域的光刻胶(Photoresiter,简称PR)厚度不均匀,有些灰阶区域光刻胶的厚度较薄,这样以来,这个区域在经过刻蚀工艺之后,就会出现如图9所示的沟道侵蚀7(Channel Attack)问题和如图10所示的漏极颈部侵蚀8(Line Curve)等问题。沟道侵蚀7即源极区域1端部和漏极区域2之间凹进去的缺陷;漏极颈部侵蚀8指漏极区域2的颈部凹进去,颈部变得较窄的缺陷。这两种情况均会导致TFT性能改变甚至不良,这样显然影响了生产质量。 
发明内容
本发明的目的是提供一种补偿型灰阶掩膜版结构,有效解决现有技术产生沟道侵蚀和漏极颈部侵蚀导致TFT性能变差等问题。 
为了实现上述目的,本发明第一方案提供了一种补偿型灰阶掩膜版结构,包括掩膜版,所述掩膜版上设置有U形状的源极区域,矩形状端部位于所述源极区域内的漏极区域,以及位于所述源极区域与漏极区域之间的U形状的阻碍条,所述源极区域与阻碍条之间、所述阻碍条与漏极区域之间形成缝隙,所述源极区域端部的内侧设置有能补偿沟道侵蚀缺陷的第一补偿区域。 
所述第一补偿区域为矩形。 
所述第一补偿区域的高度为1.0μm~2.0μm。 
为了实现上述目的,本发明第二方案提供了一种补偿型灰阶掩膜版结构,包括掩膜版,所述掩膜版上设置有U形状的源极区域,矩形状端部位于所述源极区域内的漏极区域,以及位于所述源极区域与漏极区域之间的U形状的阻碍条,所述源极区域与阻碍条之间、所述阻碍条与漏极区域之间形成缝隙,所述阻碍条的端部设置有能补偿漏极颈部侵蚀缺陷和沟道侵蚀缺陷的第二补偿区域; 
所述第二补偿区域包括与所述阻碍条端部连接的竖直条,与所述竖直条垂直的横直条,以及设置在所述竖直条和横直条之间的过渡条;所述过渡条与所述竖直条的间距为所述缝隙的宽度,所述过渡条与所述横直条的间距为所述缝隙的宽度。 
所述源极区域端部的内侧设置有能补偿沟道侵蚀缺陷的第一补偿区域。 
所述第一补偿区域为矩形。 
所述第一补偿区域的高度为1.0μm~2.0μm。 
所述横直条的宽度为1.0μm~4.0μm。 
所述横直条为矩形,所述矩形的高度为所述阻碍条的宽度。 
所述横直条为多个依次排列的矩形,相邻矩形之间的间距为所述缝隙的宽度,每个矩形的高度为所述阻碍条的宽度。 
所述竖直条为矩形,所述矩形的宽度为所述阻碍条的宽度,所述矩形的高度为所述第一补偿区域的高度。 
所述竖直条为多个依次排列的矩形,相邻矩形之间的间距为所述缝隙的宽度,每个矩形的宽度为所述阻碍条的宽度。 
针对现有技术掩膜版结构在刻蚀工艺时,出现沟道侵蚀和漏极颈部侵蚀问题导致TFT性能不良的技术缺陷,本发明提出了两种补偿型灰阶掩膜版结构,通过在源极区域上和/或阻碍条上设置相应的补偿区域,有效解决了现有技术上述缺陷。具体地,通过在源极区域端部设置第一补偿区域,以有效降低沟道侵蚀缺陷;通过在阻碍条端部设置第二补偿区域,以有效降低漏极颈部侵蚀缺陷和沟道侵蚀缺陷,进一步地,通过在源极区域端部设置第一补偿区域、在阻碍条端部设置第二补偿区域,使降低漏极颈部侵蚀缺陷和沟道侵蚀缺陷更加有效。本发明结构简单,易于实现,不需增加成本,能有效改进现有TFT的性能、防止性能不良的发生。 
下面通过附图和实施例,对本发明的技术方案做进一步的详细描述。 
附图说明
图1为本发明补偿型灰阶掩膜版第一方案的结构图; 
图2为图1所示结构中第一区域的示意图; 
图3为本发明补偿型灰阶掩膜版第二方案的结构图; 
图4为图3所示结构中第二区域的示意图; 
图5为本发明补偿型灰阶掩膜版组合方案的结构图; 
图6为图5所示结构中第一区域和第二区域的示意图; 
图7为图5所示掩膜版形成的沟道图案示意图; 
图8为现有技术灰阶掩膜版结构图; 
图9为采用现有技术掩膜版产生的沟道侵蚀示意图; 
图10为采用现有技术掩膜版产生的漏极颈部侵蚀示意图。 
具体实施方式
图1为本发明补偿型灰阶掩膜版第一方案的结构图,图2为图1所示结构中第一区域的示意图,如图1、图2所示,补偿型灰阶掩膜版包括掩膜版,掩膜版上设置有源极区域1、漏极区域2和阻碍条3,源极区域1为U形状,漏极区域2端部为矩形状,矩形状漏极区域2端部位于源极区域1的U形状内,阻碍条3设置在源极区域1与漏极区域2之间,阻碍条3也为U形状,使源极区域1与阻碍条3之间、阻碍条3与漏极区域2之间形成缝隙4,源极区域1端部的内侧设置有第一补偿区域5,第一补偿区域5用于补偿沟道侵蚀缺陷。 
在图1、图2所示的第一方案中,第一补偿区域5可以为矩形,也可为其他形状,如点状或其组合成的网状等,当采用矩形时,矩形的高度a为1.0μm~2.0μm,优选的高度可以根据试验效果的反馈进行选择和微调;以便保证第一补偿区域5的光刻胶厚度与沟道中光刻胶的厚度一致,从而使得第一补偿区域5完成补偿作用的同时,避免在第一补偿区域5造成光刻胶厚度增大导致TFT性能产生新的不良。 
针对现有技术掩膜版结构在刻蚀工艺时,出现沟道侵蚀问题导致TFT性能不良的技术缺陷,本发明第一方案提出了一种补偿型灰阶掩膜版结构,通过在源极区域上设置补偿区域,有效解决了现有技术的缺陷。具体地,通过在源极区域端部设置第一补偿区域,以有效补偿沟道侵蚀缺陷。本发明结构简单,易于实现,不需增加成本,能有效改进现有TFT的性能、防止性能不良的发生。 
采用本发明第一方案掩膜版形成的沟道图案中,第一补偿区域5对应位置的光刻胶厚度与沟道中光刻胶的厚度一致,且均匀分布;因此在刻蚀后,沟道侵蚀缺陷得到改良,本发明源极区域1端部和漏极区域2之间过渡平滑。 
图3为本发明补偿型灰阶掩膜版第二方案的结构图,图4为图3所示结构中第二区域的示意图,如图3、图4所示,补偿型灰阶掩膜版包括掩膜版,掩膜版上设置有源极区域1、漏极区域2和阻碍条3,源极区域1为U形状,漏极区域2端部为矩形状,矩形状漏极区域2端部位于源极区域1的U形状内,阻碍条3设置在源极区域1与漏极区域2之间,阻碍条3也为U形状,使源极区域1与阻碍条3之间、阻碍条3与漏极区域2之间形成缝隙4,阻碍条3的端部设置有第二补偿区域6,第二补偿区域6用于补偿漏极颈部侵蚀缺陷和沟道侵蚀缺陷。 
针对现有技术掩膜版结构在刻蚀工艺时,出现沟道侵蚀和漏极颈部侵蚀问题导致TFT性能不良的技术缺陷,本发明提出了另一种补偿型灰阶掩膜版结构,通过在阻碍条上设置补偿区域,有效解决了现有技术的缺陷。具体地,通过在阻碍条端部设置第二补偿区域,以有效补偿漏极颈部侵蚀缺陷和沟道侵蚀缺陷。本发明结构简单,易于实现,不需增加成本,能有效改进现有TFT的性能、防止性能不良的发生。 
在图3、图4所示的第二方案中,第二补偿区域6包括竖直条61、横直条62和过渡条63,三者依次排列,形成一个从阻碍条端部向上延伸、且转向后向漏极区域2外侧延伸的形状。具体地,竖直条61与阻碍条3端部连接,横直条62与竖直条61垂直,过渡条63设置在竖直条61和横直条62之间,具有呈垂直的二端,一端与竖直条61的一端邻近,另一端与横直条62邻近,过渡条63与竖直条61的间距为缝隙4的宽度b,过渡条63与横直条62的间距为缝隙4的宽度b。 
在上述第二方案中,竖直条61可以为矩形,也可为其他形状,如点状或其组合成的网状等,当采用矩形时,也可以是多个间隔设置的矩形。当竖直条61为一个矩形时,宽度为阻碍条3端部的宽度d,高度为第一补偿区域5的高度a。当竖直条61为多个间隔设置的矩形时,宽度为阻碍条3端部的宽度d,各个矩形之间以缝隙4的宽度b为间距。本实施例优选采用一个 矩形的方案。 
在上述第二方案中,横直条62的宽度c为1.0μm-4.0μm,优选的宽度可以随试验效果的反馈进行选择和微调;为保证第二补偿区域6的光刻胶厚度与沟道中光刻胶的厚度一致,该横直条62的高度d为阻碍条3的宽度。横直条62可以为矩形,也可为其他形状,如点状或其组合成的网状等,当采用矩形时,也可以是多个间隔设置的矩形。本实施例优选采用两个矩形的方案,两个矩形之间以缝隙4的宽度b为间距相邻。 
在上述第二方案中,过渡条63可以为等腰直角三角形,也可以为等腰直角梯形,还可以是弧形。在本实施例中,以等腰直角三角形为例,该等腰直角三角形的一条直角边与竖直条61的端部平行,且间距为缝隙4的宽度b;该等腰直角三角形的另一条直角边与横直条62的端部平行,且间距为缝隙4的宽度b。 
采用本发明第二方案掩膜版形成的沟道图案中,第二补偿区域6对应位置的光刻胶的厚度与沟道中光刻胶的厚度一致,且均匀分布,因此在刻蚀后,漏极颈部侵蚀缺陷和沟道侵蚀缺陷得到改良,本发明漏极区域2的端部10竖直光滑。 
图5为本发明补偿型灰阶掩膜版组合方案的结构图,图6为图5所示结构中第一区域和第二区域的示意图,如图5、图6所示,补偿型灰阶掩膜版包括掩膜版,掩膜版上设置有源极区域1、漏极区域2和阻碍条3,源极区域1为U形状,漏极区域2端部为矩形状,矩形状漏极区域2端部位于源极区域1的U形状内,阻碍条3设置在源极区域1与漏极区域2之间,阻碍条3也为U形状,使源极区域1与阻碍条3之间、阻碍条3与漏极区域2之间形成缝隙4,源极区域1端部的内侧设置有第一补偿区域5,阻碍条3的端部设置有第二补偿区域6,第一补偿区域5用于补偿沟道侵蚀缺陷,第二补偿区域6用于补偿漏极颈部侵蚀缺陷和沟道侵蚀缺陷。 
针对现有技术掩膜版结构在刻蚀工艺时,出现沟道侵蚀和漏极颈部侵蚀 问题导致TFT性能不良的技术缺陷,本发明提出了一种补偿型灰阶掩膜版结构组合方案,通过在源极区域和阻碍条上设置补偿区域,有效解决了现有技术的缺陷。具体地,通过在源极区域端部设置第一补偿区域,以有效补偿沟道侵蚀缺陷,在阻碍条端部设置第二补偿区域,以有效补偿漏极颈部侵蚀缺陷和沟道侵蚀缺陷。本发明结构简单,易于实现,不需增加成本,能有效改进现有TFT的性能、防止性能不良的发生。 
在图5、图6所示的组合方案中,第一补偿区域5同以上本发明第一方案中第一补偿区域5的结构。第二补偿区域6同以上本发明第二方案中第二补偿区域6的结构。 
图7为图5所示掩膜版形成的沟道图案示意图,如图7所示,与现有技术掩膜图案(图9和图10)相比,采用本发明的掩膜图案后,第一补偿区域5对应位置的光刻胶厚度与沟道中光刻胶的厚度一致,且均匀分布;因此在刻蚀后,沟道侵蚀7即源极区域1端部和漏极区域2之间凹进去的缺陷得到改良,本发明源极区域1端部和漏极区域2之间的过渡9平滑;同样,采用本发明组合方案的掩膜图案后,第一补偿区域5和第二补偿区域6对应位置的光刻胶的厚度与沟道中光刻胶的厚度一致,且均匀分布,因此在刻蚀后,漏极颈部侵蚀8即漏极区域2的端部凹进去,端部变得较窄的缺陷也得到改良,本发明漏极区域2的端部10竖直光滑。试验结果表明:本发明补偿性灰阶掩模版结构对沟道侵蚀缺陷和漏极颈部侵蚀缺陷所进行的改良不仅可以实现,并且经刻蚀工艺之后,TFT性能的改善效果非常好。 
最后应说明的是:以上实施例仅用以说明本发明的技术方案而非限制,尽管参照较佳实施例对本发明进行了详细说明,本领域的普通技术人员应当理解,可以对本发明的技术方案进行修改或者等同替换,而不脱离本发明技术方案的精神和范围。 

Claims (12)

1.一种补偿型灰阶掩膜版结构,包括掩膜版,所述掩膜版上设置有U形状的源极区域,矩形状端部位于所述源极区域内的漏极区域,以及位于所述源极区域与漏极区域之间的U形状的阻碍条,所述源极区域与阻碍条之间、所述阻碍条与漏极区域之间形成缝隙,其特征在于:所述源极区域端部的内侧设置有能补偿沟道侵蚀缺陷的第一补偿区域。
2.根据权利要求1所述的补偿型灰阶掩膜版结构,其特征在于:所述第一补偿区域为矩形。
3.根据权利要求1所述的补偿型灰阶掩膜版结构,其特征在于:所述第一补偿区域的高度为1.0μm~2.0μm。
4.一种补偿型灰阶掩膜版结构,包括掩膜版,所述掩膜版上设置有U形状的源极区域,矩形状端部位于所述源极区域内的漏极区域,以及位于所述源极区域与漏极区域之间的U形状的阻碍条,所述源极区域与阻碍条之间、所述阻碍条与漏极区域之间形成缝隙,其特征在于:所述阻碍条的端部设置有能补偿漏极颈部侵蚀缺陷和沟道侵蚀缺陷的第二补偿区域;
所述第二补偿区域包括与所述阻碍条端部连接的竖直条,与所述竖直条垂直的横直条,以及设置在所述竖直条和横直条之间的过渡条;所述过渡条与所述竖直条的间距为所述缝隙的宽度,所述过渡条与所述横直条的间距为所述缝隙的宽度。
5.根据权利要求4所述的补偿型灰阶掩膜版结构,其特征在于:所述源极区域端部的内侧设置有能补偿沟道侵蚀缺陷的第一补偿区域。
6.根据权利要求5所述的补偿型灰阶掩膜版结构,其特征在于:所述第一补偿区域为矩形。
7.根据权利要求5所述的补偿型灰阶掩膜版结构,其特征在于:所述第一补偿区域的高度为1.0μm~2.0μm。
8.根据权利要求4~7任一所述的补偿型灰阶掩膜版结构,其特征在于:所述横直条的宽度为1.0μm~4.0μm。
9.根据权利要求4~7任一所述的补偿型灰阶掩膜版结构,其特征在于:所述横直条为矩形,所述矩形的高度为所述阻碍条的宽度。
10.根据权利要求4~7任一所述的补偿型灰阶掩膜版结构,其特征在于:所述横直条为多个依次排列的矩形,相邻矩形之间的间距为所述缝隙的宽度,每个矩形的高度为所述阻碍条的宽度。
11.根据权利要求5~7任一所述的补偿型灰阶掩膜版结构,其特征在于:所述竖直条为矩形,所述矩形的宽度为所述阻碍条的宽度,所述矩形的高度为所述第一补偿区域的高度。
12.根据权利要求4~7任一所述的补偿型灰阶掩膜版结构,其特征在于:所述竖直条为多个依次排列的矩形,相邻矩形之间的间距为所述缝隙的宽度,每个矩形的宽度为所述阻碍条的宽度。
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