JP5230271B2 - 補償型グレイスケールマスク - Google Patents
補償型グレイスケールマスク Download PDFInfo
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- JP5230271B2 JP5230271B2 JP2008141725A JP2008141725A JP5230271B2 JP 5230271 B2 JP5230271 B2 JP 5230271B2 JP 2008141725 A JP2008141725 A JP 2008141725A JP 2008141725 A JP2008141725 A JP 2008141725A JP 5230271 B2 JP5230271 B2 JP 5230271B2
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- 239000010409 thin film Substances 0.000 claims description 14
- 230000007704 transition Effects 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 230000001052 transient effect Effects 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 34
- 230000007547 defect Effects 0.000 description 28
- 238000000034 method Methods 0.000 description 18
- 238000005530 etching Methods 0.000 description 14
- 239000010410 layer Substances 0.000 description 14
- 238000010586 diagram Methods 0.000 description 12
- 238000009827 uniform distribution Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Thin Film Transistor (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
Description
2 ドレイン電極マスク領域
3 遮光バー
4 スリット
5 第一補償領域
6 第二補償領域
7 チャンネルアタック
8 ネックアタック
61 縦方向バー
62 横方向バー
63 過渡バー
Claims (9)
- U字形のソース電極マスク領域と、
端部が前記ソース電極マスク領域に位置するドレイン電極マスク領域と、
前記ソース電極マスク領域とドレイン電極マスク領域との間に位置するU字形の遮光バーと、を備え、
前記ソース電極マスク領域と遮光バーとの間に、及び前記遮光バーとドレイン電極マスク領域との間にスリットが形成され、
前記遮光バーの端部に第二補償領域を設置し、
前記第二補償領域は、
前記遮光バーの端部に連結している縦方向バーと、
前記縦方向バーと垂直する横方向バーと、
前記縦方向バーと前記横方向バーとの間に設置している過渡バーと、を備え、
前記縦方向バー、前記横方向バー、及び前記過渡バーが互いに離間し、
前記U字形の遮光バーの直線部分が延びる方向が第1方向であり、前記第二補償領域は前記遮光バーの端部から前記第1方向に沿って延び、そして、方向を変えて前記第1方向に垂直する第2方向に沿って外方へ延び、前記縦方向バーは前記第1方向に沿って延びる部分に設けられ、前記横方向バーは前記第2方向に沿って延びる部分に設けられ、且つ、前記過渡バーは前記第二補償領域の第1方向から第2方向へ変換する位置に設けられており、
前記過渡バーと前記縦方向バーとの間隔は前記スリットの幅であり、前記過渡バーと前記横方向バーとの間隔は前記スリットの幅であり、
前記遮光バーの端部が前記ソース電極マスク領域の端部にまで延びていることを特徴とする薄膜トランジスタの製造に使用される補償型グレイスケールマスク。 - 前記ソース電極マスク領域の端部の内側に第一補償領域をさらに設置していることを特徴とする請求項1記載の補償型グレイスケールマスク。
- 前記第一補償領域は矩形であることを特徴とする請求項2記載の補償型グレイスケールマスク。
- 前記第一補償領域の高さは約1.0μm〜2.0μmであることを特徴とする請求項2記載の補償型グレイスケールマスク。
- 前記横方向バーの幅は1.0μm〜4.0μmであることを特徴とする請求項1記載の補償型グレイスケールマスク。
- 前記横方向バーは矩形であり、前記矩形の高さは前記遮光バーの幅であることを特徴とする請求項1記載の補償型グレイスケールマスク。
- 前記横方向バーは順次に配列した複数の矩形であり、隣接する矩形の間隔は前記スリットの幅であり、各矩形の高さは前記遮光バーの幅であることを特徴とする請求項1記載の補償型グレイスケールマスク。
- 前記ソース電極マスク領域の端部の内側にさらに第一補償領域を設置し、且つ前記縦方向バーは矩形であり、前記矩形の幅は前記遮光バーの幅であり、前記矩形の高さは前記第一補償領域の高さであることを特徴とする請求項1記載の補償型グレイスケールマスク。
- 前記縦方向バーは順次に配列した複数の矩形であり、隣接する矩形の間隔は前記スリットの幅であり、各矩形の幅は前記遮光バーの幅であることを特徴とする請求項1記載の補償型グレイスケールマスク。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200710121555.1 | 2007-09-10 | ||
CN2007101215551A CN101387825B (zh) | 2007-09-10 | 2007-09-10 | 补偿型灰阶掩膜版结构 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009069805A JP2009069805A (ja) | 2009-04-02 |
JP5230271B2 true JP5230271B2 (ja) | 2013-07-10 |
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Application Number | Title | Priority Date | Filing Date |
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JP2008141725A Active JP5230271B2 (ja) | 2007-09-10 | 2008-05-29 | 補償型グレイスケールマスク |
Country Status (4)
Country | Link |
---|---|
US (1) | US7897300B2 (ja) |
JP (1) | JP5230271B2 (ja) |
KR (1) | KR100954412B1 (ja) |
CN (1) | CN101387825B (ja) |
Families Citing this family (7)
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US7910267B1 (en) * | 2008-12-12 | 2011-03-22 | Western Digital (Fremont), Llc | Method and system for providing optical proximity correction for structures such as a PMR nose |
JP5875880B2 (ja) * | 2012-01-31 | 2016-03-02 | シチズンホールディングス株式会社 | 有機トランジスタ |
CN102655175B (zh) * | 2012-04-06 | 2014-07-02 | 京东方科技集团股份有限公司 | Tft、阵列基板及显示装置、制备该tft的掩模板 |
CN102799059B (zh) * | 2012-08-15 | 2014-10-15 | 京东方科技集团股份有限公司 | 灰阶掩膜版、阵列基板及其制备方法、显示装置 |
US20140319586A1 (en) | 2013-04-26 | 2014-10-30 | Raytheon Company | Photolithographic, thickness non-uniformity, compensation features for optical photolithographic semiconductor structure formation |
TWI567998B (zh) * | 2014-03-21 | 2017-01-21 | 友達光電股份有限公司 | 灰階式光罩、薄膜電晶體及主動元件陣列基板 |
CN109786322B (zh) * | 2018-12-29 | 2021-09-14 | 惠科股份有限公司 | 显示面板的制造方法及其光罩 |
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2007
- 2007-09-10 CN CN2007101215551A patent/CN101387825B/zh active Active
-
2008
- 2008-05-28 KR KR1020080049743A patent/KR100954412B1/ko active IP Right Grant
- 2008-05-29 JP JP2008141725A patent/JP5230271B2/ja active Active
- 2008-05-29 US US12/128,725 patent/US7897300B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20090068572A1 (en) | 2009-03-12 |
CN101387825A (zh) | 2009-03-18 |
JP2009069805A (ja) | 2009-04-02 |
US7897300B2 (en) | 2011-03-01 |
KR100954412B1 (ko) | 2010-04-26 |
CN101387825B (zh) | 2011-04-06 |
KR20090026716A (ko) | 2009-03-13 |
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