ATE456863T1 - Verfahren zur herstellung einer dünnfilmtransistorstruktur - Google Patents

Verfahren zur herstellung einer dünnfilmtransistorstruktur

Info

Publication number
ATE456863T1
ATE456863T1 AT01273779T AT01273779T ATE456863T1 AT E456863 T1 ATE456863 T1 AT E456863T1 AT 01273779 T AT01273779 T AT 01273779T AT 01273779 T AT01273779 T AT 01273779T AT E456863 T1 ATE456863 T1 AT E456863T1
Authority
AT
Austria
Prior art keywords
thin film
film transistor
transistor structure
producing
trench
Prior art date
Application number
AT01273779T
Other languages
English (en)
Inventor
Hiroshi Suzuki
Kuniaki Sueoka
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of ATE456863T1 publication Critical patent/ATE456863T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Bipolar Transistors (AREA)
AT01273779T 2001-02-19 2001-12-18 Verfahren zur herstellung einer dünnfilmtransistorstruktur ATE456863T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001042081 2001-02-19
PCT/JP2001/011110 WO2002067335A1 (fr) 2001-02-19 2001-12-18 Structure de transistor en couches minces, procede de fabrication d'une structure de transistor en couches minces, et dispositif d'affichage utilisant une structure de transistor en couches minces

Publications (1)

Publication Number Publication Date
ATE456863T1 true ATE456863T1 (de) 2010-02-15

Family

ID=18904430

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01273779T ATE456863T1 (de) 2001-02-19 2001-12-18 Verfahren zur herstellung einer dünnfilmtransistorstruktur

Country Status (9)

Country Link
US (2) US6952036B2 (de)
EP (1) EP1369928B1 (de)
JP (1) JP4022470B2 (de)
KR (1) KR100650417B1 (de)
CN (1) CN100459163C (de)
AT (1) ATE456863T1 (de)
DE (1) DE60141225D1 (de)
TW (1) TW541705B (de)
WO (1) WO2002067335A1 (de)

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TW200721501A (en) * 2005-07-05 2007-06-01 Univ Tohoku Thin-film transistor, wiring board and methods of producing the thin-film transistor and the wiring board
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JP2008103653A (ja) * 2006-09-22 2008-05-01 Tohoku Univ 半導体装置及び半導体装置の製造方法
KR101272489B1 (ko) * 2006-10-03 2013-06-07 삼성디스플레이 주식회사 표시 기판, 이의 제조 방법 및 이를 구비하는 전기영동표시장치
JP5329038B2 (ja) * 2006-12-21 2013-10-30 宇部日東化成株式会社 半導体装置及び半導体装置の製造方法
KR101418588B1 (ko) * 2007-11-14 2014-07-16 삼성디스플레이 주식회사 표시 기판 및 이의 제조 방법
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EP2151876A1 (de) * 2008-08-05 2010-02-10 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Elektrische Transportkomponente, Herstellungsverfahren dafür sowie elektro-optische Vorrichtung und opto-elektrische Vorrichtung
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JP5533050B2 (ja) * 2009-04-23 2014-06-25 セイコーエプソン株式会社 半導体装置の製造方法、半導体装置、アクティブマトリクス装置、電気光学装置および電子機器
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KR20140064550A (ko) * 2012-11-20 2014-05-28 삼성디스플레이 주식회사 박막 트랜지스터 표시판의 제조 방법
WO2015076358A1 (ja) * 2013-11-21 2015-05-28 株式会社ニコン 配線パターンの製造方法およびトランジスタの製造方法
TW201525064A (zh) * 2013-12-16 2015-07-01 Daxin Materials Corp 感光樹脂組成物、感光樹脂及有機發光二極體顯示元件
CN104795400B (zh) * 2015-02-12 2018-10-30 合肥鑫晟光电科技有限公司 阵列基板制造方法、阵列基板和显示装置
CN106128963B (zh) * 2016-09-23 2019-07-23 京东方科技集团股份有限公司 薄膜晶体管及制备方法、阵列基板及制备方法、显示面板
CN106876260B (zh) 2017-03-03 2020-03-27 惠科股份有限公司 一种闸电极结构及其制造方法和显示装置
CN107665896B (zh) * 2017-10-27 2021-02-23 北京京东方显示技术有限公司 显示基板及其制作方法、显示面板和显示装置
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Also Published As

Publication number Publication date
JPWO2002067335A1 (ja) 2004-06-24
EP1369928A1 (de) 2003-12-10
US20050250262A1 (en) 2005-11-10
US6952036B2 (en) 2005-10-04
EP1369928B1 (de) 2010-01-27
US20040113161A1 (en) 2004-06-17
JP4022470B2 (ja) 2007-12-19
TW541705B (en) 2003-07-11
DE60141225D1 (de) 2010-03-18
KR100650417B1 (ko) 2006-11-28
EP1369928A4 (de) 2006-01-11
WO2002067335A1 (fr) 2002-08-29
CN1489790A (zh) 2004-04-14
KR20030077621A (ko) 2003-10-01
CN100459163C (zh) 2009-02-04
US7326600B2 (en) 2008-02-05

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