CN109873037A - 薄膜晶体管及其制备方法、显示装置 - Google Patents

薄膜晶体管及其制备方法、显示装置 Download PDF

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CN109873037A
CN109873037A CN201910214175.5A CN201910214175A CN109873037A CN 109873037 A CN109873037 A CN 109873037A CN 201910214175 A CN201910214175 A CN 201910214175A CN 109873037 A CN109873037 A CN 109873037A
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grid
layer
tft
film transistor
thin film
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任艳伟
石天雷
唐乌力吉白尔
徐敬义
于亚楠
孙超超
刘敏
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BOE Technology Group Co Ltd
Ordos Yuansheng Optoelectronics Co Ltd
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BOE Technology Group Co Ltd
Ordos Yuansheng Optoelectronics Co Ltd
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Priority to CN201910214175.5A priority Critical patent/CN109873037A/zh
Publication of CN109873037A publication Critical patent/CN109873037A/zh
Priority to US17/054,711 priority patent/US20210066504A1/en
Priority to PCT/CN2020/079924 priority patent/WO2020187237A1/zh
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Abstract

本发明提供一种薄膜晶体管及其制备方法、显示装置，属于显示技术领域。本发明的薄膜晶体管包括：基底，设置在所述基底上的栅极和有源层，以及设置在所述栅极和有源层之间的层间绝缘层；在所述栅绝缘层和所述基底之间设置有平坦层，所述平坦层与所述栅极紧密接触，且所述平坦层的上表面与所述栅极的上表面平齐。

Description

薄膜晶体管及其制备方法、显示装置
技术领域
本发明属于显示技术领域，具体涉及一种薄膜晶体管及其制备方法、显示装置。
背景技术
在传统的底栅型薄膜晶体管的制备工艺中，薄膜晶体管的栅极形成在玻璃基底上之后，直接在该玻璃基底上依次形成薄膜晶体管的其它膜层。此时，很容易理解的是，形成在玻璃基底上的栅极相对于玻璃基底本身而言，是一个向上凸起的结构，这样一来，依次形成在该凸起结构(即栅极)上的薄膜晶体管的其它膜层(例如：薄膜晶体管的有源层)也有可能发生变形凸起，从而导致薄膜晶体管在进行工作时，有源层中的载流子迁移受阻，进而大大降低薄膜晶体管的性能。
为解决上述问题，本发明提供了一种新的薄膜晶体管的制备方法。
发明内容
本发明旨在至少解决现有技术中存在的技术问题之一，提供一种具有较佳性能的薄膜晶体管、显示装置。
解决本发明技术问题所采用的技术方案是一种薄膜晶体管，包括：基底，设置在所述基底上的栅极和有源层，以及设置在所述栅极和有源层之间的层间绝缘层；
在所述栅绝缘层和所述基底之间设置有平坦层，所述平坦层与所述栅极紧密接触，且所述平坦层的上表面与所述栅极的上表面平齐。
优选的是，所述平坦层的材料包括丙烯酸、透明树脂。
优选的是，所述栅绝缘层的厚度包括2000A～5000A。
优选的是，所述有源层的材料包括低温多晶硅。
解决本发明技术问题所采用的技术方案是一种薄膜晶体管的制备方法，包括：
在基底上形成栅极和平坦层，其中，所述平坦层与所述栅极紧密接触，且所述平坦层的上表面和所述栅极的上表面平齐；
形成栅绝缘层；
形成有源层。
优选的是，所述形成栅极和平坦层的步骤，包括：
在基底上，通过构图工艺形成包括栅极的图形；
在形成有所述栅极的基底上，通过流平工艺形成平坦层，以使所述平坦层的上表面与所述栅极的上表面平齐。优选的是，
所述形成栅极和平坦层的步骤，包括：
在基底上，通过构图工艺形成包括栅极的图形；
在形成有所述栅极的基底上，通过构图工艺形成包括平坦层，以使所述平坦层的上表面与所述栅极的上表面平齐。
优选的是，所述形成栅极和平坦层的步骤，包括：
在基底上通过构图工艺形成包括平坦层的图形；其中，平坦层中形成有容纳部；
在形成有所述容纳部的所述平坦层上形成栅极，且所述栅极填充在所述容纳部中，以使所述平坦层的上表面与所述栅极的上表面平齐。
优选的是，所述形成有源层的步骤包括：
形成半导体有源材料层，通过构图工艺形成包括有源层；
对所述有源层的源极接触区和漏极接触区进行离子注入。
解决本发明技术问题所采用的技术方案是一种显示装置，包括上述任意一种薄膜晶体管。
附图说明
图1为本发明的实施例1的薄膜晶体管的结构示意图；
图2为本发明的实施例2的薄膜晶体管的制备方法的工艺流程图。
其中，附图标记为：10、基底；1、栅极；2、平坦层；3、栅绝缘层；4、有源层；5、源极；6、漏极。
具体实施方式
为使本领域技术人员更好地理解本发明的技术方案，下面结合附图和具体实施方式对本发明作进一步详细描述。
其中，为便于清楚地理解本实施例的意图，在本实施例中，以薄膜晶体管为底栅型薄膜晶体管为例进行说明。当然，本实施例的薄膜晶体管并不局限于底栅型薄膜晶体管，在此不做限定。
实施例1：
本实施例提供一种薄膜晶体管，包括：基底10，依次设置在基底10上的栅极1、栅绝缘层3、有源层4，以及与有源层4的源极5接触区电连接的源极5、与有源层4的漏极6接触区电连接的漏极6；特别的是，在本实施例中，基底10与栅绝缘层3之间设置有平坦层2，平坦层2与栅极1紧密接触，且平坦层2的上表面与平坦层2的上表面平齐。
由于本实施例的平坦层2与栅极1紧密接触，且平坦层2的上表面与平坦层2的上表面平齐，故设置在栅极1所在层上方的栅绝缘层3的上表面是一与基底10平行的平面，从而使得形成在栅绝缘层3上的有源层4上下表面均较为平整，这样一来，即可避免现有技术中，直接在形成有栅极1这一凸起结构的基底10上，依次形成薄膜晶体管的其他膜层，所导致的有源层4发生凸起变形的情况；进一步地，还解决了有源层4发生凸起所导致的、薄膜晶体管在进行工作时，有源层4中的载流子迁移受阻，影响薄膜晶体管的性能的问题。
另外，在此应当注意的是，由图1还可以看出：在本实施例的薄膜晶体管中，栅极1是与有源层4对应设置的，也即栅极1在基底101上的正投影至少部分覆盖有源层4在基底10上的正投影，此时，由于栅极1本身为不透光结构，故当本实施例的薄膜晶体管用于制备液晶显示器时，液晶显示器中的背光源所发出的光线无法通过栅极1照射至有源层4，从而避免光线照射至有源层4，所导致的有源层4发生光电效应，出现漏电的情况；与此同时，该种结构设置无需额外进行掩膜工艺，以形成用以遮挡有源层4的遮光层，从而简化了本实施例的薄膜晶体管的制备工艺，降低生产成本。
优选的，栅绝缘层3的厚度包括
在此需要说明的是，之所以这样设置是因为，在本实施例中，栅绝缘层3的作用是将薄膜晶体管的有源层4隔开，同时保证栅极1与源极5、漏极6栅极1之间存在一定距离源极5漏极6栅极1，从而避免薄膜晶体管的源极5、漏极6与栅极1之间的信号发生干扰，以此来确保包括本实施例的薄膜晶体管的显示装置具有较佳的显示效果。
其中，本实施例优选的，平坦层2的材料包括丙烯酸、透明树脂。之所以采用这些材料来制备平坦层2是因为，丙烯酸和透明树脂材料是一种良好的流平剂，其能够使得通过流平工艺制备所得的平坦层2具有一个平整、光滑、均匀的表面，以此来进一步确保平坦层2与栅极1构成一个平整的表面。当然，本实施例的平坦层2的材料并不局限于前述的丙烯酸、透明树脂，在此不做限定。
其中，本实施例优选的，薄膜晶体管的有源层材料包括低温多晶硅，也即本实施例中的薄膜晶体管为低温多晶硅薄膜晶体管。当然，本实施例的薄膜晶体管并不局限于前述的低温多晶硅薄膜晶体管，在此不再一一赘述。
实施例2：
本实施例提供一种薄膜晶体管的制备方法，其中，实施例1中的薄膜晶体管可采用本实施例的制备方法进行制备。具体的，该制备方法包括在基底10上形成栅极1、栅绝缘层3、有源层4的步骤；特别的是，在实施例的制备方法中还包括在基底10和栅绝缘层3之间形成平坦层2的步骤；其中，所形成的平坦层2与栅极1紧密接触，且该平坦层2的上表面和栅极1的上表面平齐。
为了更清楚本实施例中的薄膜晶体管的制备方法，本实施例中给出以下几种具体制备工艺步骤，具体如下：
在本发明中，构图工艺，可只包括光刻工艺，或，包括光刻工艺以及刻蚀步骤，同时还可以包括打印、喷墨等其他用于形成预定图形的工艺；光刻工艺，是指包括成膜、曝光、显影等工艺过程的利用光刻胶、掩模板、曝光机等形成图形的工艺。可根据本发明中所形成的结构选择相应的构图工艺。
方法一
如图2所示，步骤一、在基底10上，通过构图工艺形成包括栅极1。
具体的，基底10采用玻璃等透明材料制成、且经过预先清洗。具体的，在基底10上采用溅射方式、热蒸发方式、等离子体增强化学气相沉积(Plasma Enhanced VaporDeposition：简称PECVD)方式、低压化学气相沉积(Low Pressure Chemical VaporDeposition：简称LPCVD)方式、大气压化学气相沉积(Atmospheric Pressure ChemicalVapor Deposition：简称APCVD)方式或电子回旋谐振化学气相沉积(Electron CyclotronResonance Chemical Vapor Deposition:简称ECR-CVD)方式形成栅金属薄膜，并在栅金属薄膜上形成光刻胶，之后通过曝光、显影、刻蚀工艺形成包括薄膜晶体管的栅极1的图形。
其中，栅金属薄膜的材料包括金属、金属合金，如：钼、钼铌合金、铝、铝钕合金、钛或铜等导电材料形成。
步骤二、在完成步骤一的基底10上通过流平工艺，形成包括平坦层2的图形；其中，平坦层2与栅极1紧密接触，且平坦层2的上表面与栅极1的上表面平齐。
其中，平坦层2的材料包括：丙烯酸或者透明树脂。之所以采用这些材料来制备平坦层2是因为，丙烯酸和透明树脂材料是一种良好的流平剂，其能够使得通过流平工艺制备所得的平坦层2具有一个平整、光滑、均匀的表面，以此来进一步确保平坦层2与栅极1的上表面构成一个平整的表面。当然，本实施例的平坦层2的材料并不局限于前述的丙烯酸、透明树脂，在此不做限定。
步骤三、在完成步骤二的基底10上，形成栅绝缘层3。
具体的，在该步骤中可以采用等离子体增强化学气相沉积方式、低压化学气相沉积方式、大气压化学气相沉积方式或电子回旋谐振化学气相沉积方式或溅射方式形成栅绝缘层3。
其中，栅绝缘层3的材料包括氧化硅、氮化硅或者二者的复合材料。当然，也不局限于这两种材料。
其中，栅绝缘层3的厚度包括
在此需要说明的是，之所以这样设置是因为，在本实施例中，栅绝缘层3的作用是将薄膜晶体管的有源层4隔开，同时保证栅极1与源极5、漏极6之间存在一定距离，从而避免薄膜晶体管的源极5、漏极6与栅极1之间的信号发生干扰，以此来确保包括本实施例的薄膜晶体管的显示装置具有较佳的显示效果。
步骤四、在完成步骤三的基底10上，通过构图共以形成包括有源层4的图形。
具体的，在该步骤中，首先可以形成非晶硅膜(a-S i)，沉积方式包括等离子体增强化学气相沉积方式、低压化学气相沉积方式。
接着，对非晶硅膜进行晶化，晶化方式包括采用准分子激光晶化方式、金属诱导晶化方式或固相晶化方式，将非晶硅膜转变为多晶硅膜(p-Si)，然后，对多晶硅膜(p-Si)进行掺杂(P型掺杂或者N型掺杂)，以决定薄膜晶体管TFT的沟道区导电类型。其中，准分子激光晶化方式、金属诱导晶化方式为两种低温多晶硅的方法，是较为常用的把非晶硅转变为多晶硅的方法。然而，本发明将非晶硅转变为多晶硅的方法，并不限制于采用低温多晶硅的方法，只要能够将有源层4转变为所需的多晶硅薄膜就可以。
之后，形成包括有源层4的图形。即在多晶硅膜上形成一层光刻胶，对光刻胶进行曝光和显影，然后对多晶硅膜进行干法刻蚀，以形成包括有源层4的图形。
最后，采用离子注入法，将有源层4(p-Si)对应着源极接触区和漏极接触区进行掺杂，以增强有源层4与源极5和漏极6的欧姆接触，保证P-Si与源极5、漏极6形成良好的欧姆接触。
其中，离子注入方式包括具有质量分析仪的离子注入方式、不具有质量分析仪的离子云式注入方式、等离子注入方式或固态扩散式注入方式。即本实施例中，由低温多晶硅材料经晶化、掺杂、离子注入等多个步骤，最终形成具有良好半导体性质的有源层4。
步骤五、在完成步骤四的基底10上，通过构图工艺形成包括薄膜晶体管的源极5和漏极6的图形。
具体的，在该步骤中可以采用溅射方式、热蒸发方式、等离子体增强化学气相沉积方式、低压化学气相沉积方式、大气压化学气相沉积方式或电子回旋谐振化学气相沉积方式形成源漏金属薄膜，并在源漏金属薄膜上形成光刻胶，之后通过曝光、显影、刻蚀工艺形成包括薄膜晶体管的源极5和漏极6的图形。
其中，源漏金属薄膜的材料包括金属、金属合金，如：钼、钼铌合金、铝、铝钕合金、钛或铜等导电材料形成。
至此完成薄膜晶体管的制备。
方法二
方法二与方法一的区别仅在于步骤二，也即在方法二中形成平坦层2不采用流平工艺，而是采用构图工艺。具体的，在形成栅极1的基底10上沉积平坦层2材料，之后通过曝光、显影、刻蚀形成包括平坦层2的图形，以使平坦层2与栅极1紧密接触，且平坦层2的上表面与栅极1的上表面平齐。其中，形成薄膜晶体管的其余步骤与方法一相同，在此不再重复描述。
方法三
方法三与方法二的步骤大致相同，区别在于先形成平坦层2之后形成栅极1。具体的，步骤一、在基底10上通过构图工艺形成平坦层2材料，通过刻蚀工艺形成包括具有容纳部的平坦层2；步骤二、通过构图工艺形成包括栅极1的图形；其中，栅极1填充在平坦层2的容纳部中，此时平坦层2与栅极1紧密接触，且平坦层2的上表面与栅极1的上表面平齐。其中，形成薄膜晶体管的其余步骤与方法一相同，在此不再重复描述。
由于本实施例的薄膜晶体管的制备方法中包括形成平坦层2的步骤，且平坦层2与栅极1紧密接触，且平坦层2的上表面与平坦层2的上表面平齐，故设置在栅极1所在层上方的栅绝缘层3的上表面是一与基底10平行的平面，从而使得形成在栅绝缘层3上的有源层4上下表面均较为平整，这样一来，即可避免现有技术中，直接在形成有栅极1这一凸起结构的基底10上，依次形成薄膜晶体管的其他膜层，所导致的有源层4发生凸起变形的情况；进一步地，还解决了有源层4发生凸起所导致的、薄膜晶体管在进行工作时，有源层4中的载流子迁移受阻，影响薄膜晶体管的性能的问题。
实施例3：
本实施例提供一种显示装置，包括实施例1中的薄膜晶体管，由于本实施例的显示装置包括前述的薄膜晶体管，故本实施例的显示装置具有较佳的显示效果。
其中，显示装置可以为液晶显示装置或者电致发光显示装置，例如液晶面板、电子纸、OLED面板、手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
可以理解的是，以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式，然而本发明并不局限于此。对于本领域内的普通技术人员而言，在不脱离本发明的精神和实质的情况下，可以做出各种变型和改进，这些变型和改进也视为本发明的保护范围。

Claims (10)

1.一种薄膜晶体管，其特征在于，包括：基底，设置在所述基底上的栅极和有源层，以及设置在所述栅极和有源层之间的栅绝缘层；
在所述栅绝缘层和所述基底之间设置有平坦层，所述平坦层与所述栅极紧密接触，且所述平坦层的上表面与所述栅极的上表面平齐。
2.根据权利要求1所述的薄膜晶体管，其特征在于，所述平坦层的材料包括丙烯酸、透明树脂。
3.根据权利要求1所述的薄膜晶体管，其特征在于，所述栅绝缘层的厚度包括
4.根据权利要求1所述的薄膜晶体管，其特征在于，所述有源层的材料包括低温多晶硅。
5.一种薄膜晶体管的制备方法，其特征在于，包括：
在基底上形成栅极和平坦层，其中，所述平坦层与所述栅极紧密接触，且所述平坦层的上表面和所述栅极的上表面平齐；
形成栅绝缘层；
形成有源层。
6.根据权利要求5所述的薄膜晶体管的制备方法，其特征在于，所述形成栅极和平坦层的步骤，包括：
在基底上，通过构图工艺形成包括栅极的图形；
在形成有所述栅极的基底上，通过流平工艺形成平坦层，以使所述平坦层的上表面与所述栅极的上表面平齐。
7.根据权利要求5所述的薄膜晶体管的制备方法，其特征在于，所述形成栅极和平坦层的步骤，包括：
在基底上，通过构图工艺形成包括栅极的图形；
在形成有所述栅极的基底上，通过构图工艺形成包括平坦层，以使所述平坦层的上表面与所述栅极的上表面平齐。
8.根据权利要求6所述的薄膜晶体管的制备方法，其特征在于，所述形成栅极和平坦层的步骤，包括：
在基底上通过构图工艺形成包括平坦层的图形；其中，平坦层中形成有容纳部；
在形成有所述容纳部的所述平坦层上形成栅极，且所述栅极填充在所述容纳部中，以使所述平坦层的上表面与所述栅极的上表面平齐。
9.根据权利要求6所述的薄膜晶体管的制备方法，其特征在于，所述形成有源层的步骤包括：
形成半导体有源材料层，通过构图工艺形成包括有源层；
对所述有源层的源极接触区和漏极接触区进行离子注入。
10.一种显示装置，其特征在于，包括权利要求1-4中任一所述的薄膜晶体管。
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Application publication date: 20190611