WO2020062483A1 - 薄膜晶体管阵列基板及其制造方法、显示面板 - Google Patents

薄膜晶体管阵列基板及其制造方法、显示面板 Download PDF

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Publication number
WO2020062483A1
WO2020062483A1 PCT/CN2018/115494 CN2018115494W WO2020062483A1 WO 2020062483 A1 WO2020062483 A1 WO 2020062483A1 CN 2018115494 W CN2018115494 W CN 2018115494W WO 2020062483 A1 WO2020062483 A1 WO 2020062483A1
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Prior art keywords
layer
interdigital
gate
light
thin film
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PCT/CN2018/115494
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English (en)
French (fr)
Inventor
王川
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武汉华星光电技术有限公司
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Priority to US16/349,663 priority Critical patent/US11397359B2/en
Publication of WO2020062483A1 publication Critical patent/WO2020062483A1/zh

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
    • H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel

Definitions

  • the present application relates to the technical field of thin film transistors, and in particular, to a thin film transistor array substrate, a manufacturing method thereof, and a display panel.
  • FIG. 1 is a cross-sectional structure of a thin film transistor device widely used in an existing liquid crystal display.
  • the thin film transistor has a problem that the device area is too large, resulting in an increase in manufacturing cost.
  • the purpose of the present application is to provide a thin film transistor array substrate, a method for manufacturing the thin film transistor array substrate, and a display panel, so as to solve the problem that an existing thin film transistor occupies a large device area and increases manufacturing costs.
  • a thin film transistor array substrate includes:
  • An interdigitated gate formed on the first insulating layer and located above the interdigitated light-shielding layer;
  • a second insulating layer covering the interdigitated gate and the first insulating layer
  • the interdigital light-shielding layer is electrically connected to the interdigital gate.
  • the projection of the interdigital gate in a first direction overlaps the interdigital light-shielding layer, and the first direction is perpendicular to a horizontal plane on which the substrate is located and is defined by the interdigit
  • the finger gate points in the direction of the interdigital light-shielding layer.
  • the interdigital light shielding layer and the interdigital gate are connected through a conductive layer.
  • the conductive layer is a gate line extending from the interdigital gate and covering a via hole in the buffer layer.
  • the buffer layer includes a silicon nitride layer and a silicon oxide layer that are sequentially covered on the interdigital light-shielding layer and the substrate, and the first insulating layer includes A silicon oxide layer and a silicon nitride layer on the channel layer and the buffer layer.
  • a material for preparing the interdigital light-shielding layer is at least one of molybdenum, aluminum, copper, and titanium.
  • a preparation material of the interdigital gate is at least one of molybdenum, aluminum, copper, and titanium.
  • a manufacturing method of a thin film transistor array substrate includes the following steps:
  • interdigital gate Forming an interdigital gate on the first insulating layer, the interdigital gate being located above the interdigital light-shielding layer;
  • first electrode and at least two second electrodes Forming at least one first electrode and at least two second electrodes, the first electrode and the second electrode covering via holes formed on the first insulating layer and the second insulating layer to communicate with the trench Track layer connection, the second electrode is located on both sides of the interdigital gate, and the second electrode is spaced from the first electrode;
  • the interdigital light-shielding layer is electrically connected to the interdigital gate.
  • the projection of the interdigitated gate along a first direction overlaps the interdigitated light-shielding layer, and the first direction is perpendicular to a horizontal plane where the substrate is located and is defined by The interdigitated gate points in a direction of the interdigitated light-shielding layer.
  • the interdigital light-shielding layer and the interdigital gate are connected by a conductive layer, and the conductive layer extends from the interdigital gate and covers The gate lines of the vias on the buffer layer are described.
  • the buffer layer includes a silicon nitride layer and a silicon oxide layer covering the interdigital light-shielding layer and the substrate in order
  • the first insulating layer includes A silicon oxide layer and a silicon nitride layer covering the channel layer and the buffer layer.
  • a material for preparing the interdigital light-shielding layer is at least one of molybdenum, aluminum, copper, and titanium.
  • a material for preparing the interdigital gate is at least one of molybdenum, aluminum, copper, and titanium.
  • a display panel includes the thin film transistor array substrate described above.
  • the projection of the interdigital grid along the first direction overlaps the interdigital light-shielding layer, and the first direction is perpendicular to the horizontal plane where the substrate is located and is defined by the interdigital type.
  • the gate points in the direction of the interdigital light-shielding layer.
  • the interdigital light shielding layer and the interdigital gate are connected through a conductive layer.
  • the conductive layer is a gate line extending from the interdigital gate and covering a via hole on the buffer layer.
  • the buffer layer includes a silicon nitride layer and a silicon oxide layer that are sequentially covered on the interdigital light-shielding layer and the substrate, and the first insulating layer includes that are sequentially covered on the trench.
  • the material of the interdigital light-shielding layer is at least one of molybdenum, aluminum, copper, and titanium.
  • the material of the interdigital gate is at least one of molybdenum, aluminum, copper, and titanium.
  • the electrical connection between the interdigital gate and the interdigital light-shielding layer and the cooperation of the interdigital gate design are used to increase the width of the channel, while maintaining the width / length ratio of the channel of a single thin film crystal device to W.
  • the increased channel width can reduce the width of the channel layer occupied by the channel and keep the total channel width of a single thin film transistor constant, so that the area occupied by a single thin film transistor device is reduced, thereby Improve the utilization of the channel layer and reduce production costs.
  • FIG. 1 is a cross-sectional structure of a thin film transistor device in the prior art
  • FIGS. 2A-2H are schematic structural diagrams of a thin film transistor array substrate during a formation process according to a first embodiment of the present application.
  • FIG. 2A-2H it is a schematic structural diagram of a thin film transistor array substrate formation process according to a first embodiment of the present application, including the following steps:
  • an interdigital light-shielding layer 21 is formed on the substrate 20;
  • the substrate 20 may be any one of a glass substrate, a plastic substrate, a flexible substrate, or a flexible substrate, which is not specifically limited in this application.
  • the interdigitated light-shielding layer 21 is used to shield the backlight to prevent subsequent formation of channel layers affected by the backlight to generate photocarriers, resulting in an increase in the leakage current of the thin film transistor.
  • the interdigital light-shielding layer 21 includes at least two light-shielding strips 211, The light-shielding strips 211 are arranged in parallel along the x direction of the horizontal plane on which the substrate 20 is located. One end of the light-shielding strips 211 is connected to the light-shielding main line.
  • the y-direction of the plane on which the base is located is perpendicular, and the x-direction and y-direction of the horizontal plane on which the substrate is located are perpendicular to each other.
  • FIG. 2B it is a schematic plan view of an interdigital light-shielding layer on a substrate 20.
  • the finger-type light-shielding layer 21 is a component of the thin film transistor. It is also located at a corner of the pixel region P and is composed of two light-shielding strips 211 and a light-shielding main line connecting the two light-shielding strips 211.
  • the x-direction of the horizontal plane is arranged in parallel, and the straight line where the shading main line is located is parallel to the x-direction of the horizontal plane where the substrate 20 is located.
  • the material of the interdigital light-shielding layer 21 is at least one of molybdenum, aluminum, copper, and titanium; the thickness of the interdigital light-shielding layer is 500-2000 Angstroms.
  • an interdigitated light shielding layer 21 is formed by a mask process Mask-1. Specifically, after the substrate 20 is cleaned and dried, a whole light-shielding layer is deposited on the base substrate 20 by a chemical deposition method, and then a whole-face photoresist is coated on the light-shielding layer and the photoresist is preliminarily prepared. After baking, then use a mask to expose the entire surface of the photoresist, and then use the developer to develop it, leaving the photoresist that was not developed by the developer, and then etch the light-shielding layer that is not covered by the photoresist. Finally, the photoresist that has not been developed by the developing solution is removed to obtain an interdigital light-shielding layer 21.
  • the buffer layer 22 plays a role in preventing impurities in the substrate 20 from diffusing upward in a subsequent process, affecting the performance of the channel layer, or isolating heat to protect the substrate 20.
  • the buffer layer 22 is a silicon oxide layer, a silicon nitride layer or a stack of silicon oxide and silicon oxide, or other non-conductive layers; the thickness of the buffer layer 22 is 1000-5000 angstroms; the buffer layer 22 may be chemical vapor deposition, plasma chemistry It is prepared by any one of vapor deposition, sputtering deposition, vacuum evaporation, and low-pressure chemical vapor deposition.
  • the channel layer 23 is used to conduct current between the source electrode and the drain electrode, and the current can be controlled by adjusting the composition of the channel.
  • the channel layer 23 is a semiconductor material such as a silicon-based semiconductor or a metal oxide semiconductor.
  • the channel layer 23 is a polysilicon layer, and an entire amorphous silicon layer is formed on the buffer layer 22, and then the mask layer process Mask-2 is performed on the amorphous silicon layer to pattern the non-crystalline silicon layer. Crystalline silicon layer and then excimer laser annealing of the patterned amorphous silicon (Excimer Laser annealing (ELA) treatment to obtain the channel layer 23.
  • ELA Excimer Laser annealing
  • the process of the mask process Mask-2 is the same as the above-mentioned mask process Mask-1, which will not be described in detail here.
  • the channel layer may be doped with ions, such as phosphorus or boron.
  • the first insulating layer 24 is also referred to as a gate insulating layer, and functions as an insulation between the channel layer and the interdigital gate.
  • the first insulating layer 24 is obtained by using any one of chemical vapor deposition, plasma chemical vapor deposition, sputtering deposition, or vacuum evaporation to form an entire insulating layer covering the channel layer 23 and the buffer layer 22.
  • the first insulating layer 24 can be made of any one of silicon oxide, silicon nitride, and silicon oxynitride.
  • the thickness of the first insulating layer is 1000-3000 Angstroms.
  • an interdigital gate 25 is formed on the first insulating layer 24, and the interdigital gate 25 is located above the interdigital light-shielding layer 21.
  • the interdigital grid 25 includes at least two grid lines 251.
  • the grid lines 251 are arranged in parallel along the x-direction of the horizontal plane on which the substrate 20 is located. One end of the grid lines 251 is connected to the main grid line.
  • the y-direction of the horizontal plane on which the substrate 20 is located is parallel, and the main gate line is perpendicular to the y-direction of the horizontal plane on which the substrate 20 is located.
  • the interdigitated gate 25 is composed of two gate lines 251 and a main gate line 252 connecting the two gate lines 251.
  • the two gate lines 251 have the same width and two gate lines.
  • the length of 251 is not specifically limited.
  • the interdigitated gate 25 is electrically connected to the interdigitated light-shielding layer 21.
  • the electrical connection relationship between the interdigital gate 25 and the interdigitated light-shielding layer 21 is shown by a wire in FIG. 2F.
  • the interdigitated gate 25 is formed by a mask process Mask-3.
  • the steps of the mask process Mask-3 are the same as those of the mask process Mask-1, and will not be described in detail here.
  • the material of the interdigital gate 25 may be at least one of molybdenum, aluminum, copper, and titanium; the thickness of the interdigital gate is 500-2000 Angstroms.
  • the electrical connection between the interdigital gate and the interdigital light-shielding layer and the cooperation of the interdigital gate design are used to increase the width of the channel, while maintaining the width / length of the channel of a single thin-film crystal device to W.
  • the increased channel width can reduce the width of the channel layer occupied by the channel and keep the total channel width of a single thin film transistor constant, so that the area occupied by a single thin film transistor device is reduced, thereby increasing Utilization of the channel layer reduces production costs.
  • the second insulating layer 26 is also referred to as an interlayer insulating layer.
  • the second insulating layer 26 is formed to cover the interdigitated gate electrode 25 and the first insulating layer by using any one of chemical vapor deposition, plasma chemical vapor deposition, sputtering deposition, or vacuum evaporation.
  • a whole insulating layer of 24 is used to obtain a second insulating layer 26;
  • a material for preparing the second insulating layer 26 may be any one of silicon oxide, silicon nitride or silicon oxynitride; the thickness of the second insulating layer is 1-4 microns.
  • At least three vias are formed on the first insulating layer 24 and the second insulating layer 26 through a mask process Mask-4, and the three vias all expose a part of the channel layer, which is provided for the subsequent formation of spaces.
  • the source and drain stages and the source and drain stages are both connected to the channel layer to provide conditions.
  • the process of the mask process Mask-4 is the same as the aforementioned mask process Mask-1, which is not described in detail here.
  • At least one first electrode 271 and at least two second electrodes 272 are formed, and the first electrode 271 and the second electrode 272 cover the processes formed on the first insulating layer 24 and the second insulating layer 26.
  • the hole is connected to the channel layer 23.
  • the second electrode 272 is located on both sides of the interdigital gate 25.
  • the second electrode 272 is disposed at a distance from the first electrode 271.
  • a mask process is used to form a first electrode 271 and two second electrodes 272 on the interlayer insulating layer forming the via hole.
  • the first electrode 271 is a source level and the second electrode 272 is a drain electrode.
  • the first electrode 271 is located between the two gate lines 251 of the interdigital gate 25.
  • the two second electrodes 272 are located on both sides of the interdigital gate 25 and spaced from the first electrode 271. .
  • Materials for preparing the first electrode 271 and the second electrode 272 include, but are not limited to, aluminum, molybdenum, titanium, chromium, copper, metal oxide, metal alloy, or other conductive materials, or ITO (Indium tion oxide, indium tin oxide), or It is a laminated electrode composed of two layers of ITO and silver located between the two layers of ITO.
  • the steps of the mask process Mask-5 are the same as those of the mask process Mask-1, which will not be described in detail here.
  • the channel layer between a source electrode and a drain electrode is a channel.
  • the channel width is parallel to the y-direction of the horizontal plane on which the substrate 20 is located, and the channel length is parallel to the x-direction of the horizontal plane on which the substrate 20 is located.
  • the application also provides a thin film thin film transistor array substrate prepared by the above process, including:
  • Interdigitated gate 25 which is formed on the first insulating layer 24 and is located above the interdigitated light-shielding layer 21;
  • the second electrode 272 is located on both sides of the interdigital gate 25, and the second electrode 272 is disposed at a distance from the first electrode 271.
  • the interdigital shielding layer 21 is electrically connected to the interdigital gate 25.
  • the projection of the interdigital grid 25 along the first direction overlaps the interdigital light-shielding layer 21.
  • the first direction is perpendicular to the horizontal plane of the substrate 20 and is pointed by the interdigital grid 25 to the interdigital light-shielding layer 25.
  • the pattern of the interdigitated gate 25 is the same as the pattern of the interdigitated light-shielding layer 21 and is relative to each other, which is helpful to improve the reliability of the device and to avoid the breakdown of the device due to the excessive electric field of the drain electrode and the leakage current and parasitic capacitance. Big question.
  • interdigital light shielding layer 21 and the interdigital gate 25 are connected by a conductive layer.
  • the conductive layer may be a conductive material, and the conductive layer may extend from the interdigital gate 25 and cover the buffer layer 22.
  • the gate line of the hole When preparing the interdigital gate 25, a via hole is formed in the buffer layer 22 and a gate layer is covered in the via hole to obtain a gate line connecting the interdigital gate 25 and the interdigital light shielding layer 21.
  • the buffer layer 22 includes a silicon nitride layer and a silicon oxide layer that sequentially cover the interdigital light-shielding layer 21 and the substrate 20, and the first insulating layer 24 includes a silicon layer and a buffer layer 22 that are sequentially covered on the channel layer 23 and the buffer layer 22. Silicon oxide layer and silicon nitride layer.
  • Such a composition of the buffer layer 22 and the first insulating layer 24 can ensure that the turn-on voltage of the TFT on the thin film transistor array substrate of the present invention is the same as the turn-on voltage of the existing TFT.
  • first depositing silicon nitride and then depositing silicon oxide on the buffer layer 22 can also better prevent impurities in the substrate 20 from entering other various film layers in subsequent processes, thereby affecting the electrical performance of the TFT device and the bonding between the various film layers. The force will also be better and not easily separated from each other.
  • the present application also provides a display panel including the above-mentioned thin film transistor array substrate.

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Abstract

一种薄膜晶体管阵列基板及其制造方法、显示面板，通过叉指型栅极（25）和叉指型遮光层（21）之间电连接以及叉指型栅极（25）设计的配合以增加沟道的宽度，在保持单个薄膜晶体器件沟道宽/长为W 总/L不变时，增加的沟道宽度使沟道所占用的沟道层（23）宽度减小而保持单个薄膜晶体管总沟道宽度不变，使得单个薄膜晶体管器件所占面积减小。

Description

薄膜晶体管阵列基板及其制造方法、显示面板 技术领域
本申请涉及薄膜晶体管技术领域，尤其涉及一种薄膜晶体管阵列基板及其制造方法、显示面板。
 背景技术
薄膜晶体管(Thin Film Transistor, TFT)器件是液晶显示器中十分重要的电子元器件，液晶显示器内部各种控制电路均由其构成。图1为现有液晶显示器中广泛使用的薄膜晶体管器件的截面结构，该薄膜晶体管存在所占器件面积太大，导致制造成本增加的问题。
因此，有必要提出一种技术方案以解决现有薄膜晶体管所占器件面积太大导致制造成本增加的问题。
 技术问题
本申请的目的在于提供一种薄膜晶体管阵列基板及其制造方法、显示面板，以解决现有薄膜晶体管所占器件面积太大导致制造成本增加的问题。
 技术解决方案
一种薄膜晶体管阵列基板，所述薄膜晶体管阵列基板包括：
叉指型遮光层，所述叉指型遮光层形成于衬底上；
缓冲层，所述缓冲层覆盖在所述叉指型遮光层和所述衬底上；
沟道层，所述沟道层形成于所述缓冲层上；
第一绝缘层，所述第一绝缘层覆盖在所述沟道层和所述缓冲层上；
叉指型栅极，所述叉指型栅极形成于所述第一绝缘层上且位于所述叉指型遮光层的上方；
第二绝缘层，所述第二绝缘层覆盖在所述叉指型栅极和所述第一绝缘层上；
至少一个第一电极及至少两个第二电极，所述第一电极和所述第二电极覆盖形成于所述第一绝缘层和所述第二绝缘层上的过孔以与所述沟道层连接，所述第二电极位于所述叉指型栅极的两侧，所述第二电极与所述第一电极间隔地设置；
其中，所述叉指型遮光层与所述叉指型栅极电连接。
在上述薄膜晶体管阵列基板中，所述叉指型栅极沿第一方向的投影与所述叉指型遮光层重叠，所述第一方向为垂直于所述衬底所在水平面且由所述叉指型栅极指向所述叉指型遮光层的方向。
在上述薄膜晶体管阵列基板中，所述叉指型遮光层与所述叉指型栅极通过导电层连接。
在上述薄膜晶体管阵列基板中，所述导电层为从所述叉指型栅极上延伸出且覆盖所述缓冲层上过孔的栅极线。
在上述薄膜晶体管阵列基板中，所述缓冲层包括依次覆盖在所述叉指型遮光层和所述衬底上的氮化硅层和氧化硅层，所述第一绝缘层包括依次覆盖在所述沟道层和所述缓冲层上的氧化硅层和氮化硅层。
在上述薄膜晶体管阵列基板中，所述叉指型遮光层的制备材料为钼、铝、铜、钛中的至少一种。
在上述薄膜晶体管阵列基板中，所述叉指型栅极的制备材料为钼、铝、铜、钛中的至少一种。
一种薄膜晶体管阵列基板的制造方法，所述制造方法包括如下步骤：
于衬底上形成一叉指型遮光层；
形成覆盖所述叉指遮光层和所述衬底的缓冲层；
于所述缓冲层上形成沟道层；
形成覆盖所述沟道层和所述缓冲层的第一绝缘层；
于所述第一绝缘层上形成叉指型栅极，所述叉指型栅极位于所述叉指型遮光层的上方；
形成覆盖所述叉指型栅极和所述第一绝缘层的第二绝缘层；
形成至少一个第一电极及至少两个第二电极，所述第一电极和所述第二电极覆盖形成于所述第一绝缘层和所述第二绝缘层上的过孔以与所述沟道层连接，所述第二电极位于所述叉指型栅极的两侧，所述第二电极与所述第一电极间隔地设置；
其中，所述叉指型遮光层与所述叉指型栅极电连接。
在上述薄膜晶体管阵列基板的制造方法中，所述叉指型栅极沿第一方向的投影与所述叉指型遮光层重叠，所述第一方向为垂直于所述衬底所在水平面且由所述叉指型栅极指向所述叉指型遮光层的方向。
在上述薄膜晶体管阵列基板的制造方法中，所述叉指型遮光层与所述叉指型栅极通过导电层连接，所述导电层为从所述叉指型栅极上延伸出且覆盖所述缓冲层上过孔的栅极线。
在上述薄膜晶体管阵列基板的制造方法中，所述缓冲层包括依次覆盖在所述叉指型遮光层和所述衬底上的氮化硅层和氧化硅层，所述第一绝缘层包括依次覆盖在所述沟道层和所述缓冲层上的氧化硅层和氮化硅层。
在上述薄膜晶体管阵列基板的制造方法中，所述叉指型遮光层的制备材料为钼、铝、铜、钛中的至少一种。
在上述薄膜晶体管阵列基板的制造方法中，所述叉指型栅极的制备材料为钼、铝、铜、钛中的至少一种。
一种显示面板，所述显示面板包括上述薄膜晶体管阵列基板。
在上述显示面板中，所述叉指型栅极沿第一方向的投影与所述叉指型遮光层重叠，所述第一方向为垂直于所述衬底所在水平面且由所述叉指型栅极指向所述叉指型遮光层的方向。
在上述显示面板中，所述叉指型遮光层与所述叉指型栅极通过导电层连接。
在上述显示面板中，所述导电层为从所述叉指型栅极上延伸出且覆盖所述缓冲层上过孔的栅极线。
在上述显示面板中，所述缓冲层包括依次覆盖在所述叉指型遮光层和所述衬底上的氮化硅层和氧化硅层，所述第一绝缘层包括依次覆盖在所述沟道层和所述缓冲层上的氧化硅层和氮化硅层。
在上述显示面板中，所述叉指型遮光层的制备材料为钼、铝、铜、钛中的至少一种。
在上述显示面板中，所述叉指型栅极的制备材料为钼、铝、铜、钛中的至少一种。
 有益效果
本申请通过叉指型栅极和叉指型遮光层之间电连接以及叉指型栅极设计的配合，以增加沟道的宽度，在保持单个薄膜晶体器件沟道的宽/长比为W 总/L不变时，增加的沟道宽度可以使沟道所占用的沟道层的宽度减小而保持单个薄膜晶体管总沟道宽度不变，使得单个薄膜晶体管器件所占面积减小，从而提高沟道层的利用率，降低生产成本。
附图说明
图1为现有技术中的薄膜晶体管器件的截面结构；
图2A-2H为本申请第一实施例薄膜晶体管阵列基板的形成过程中的结构示意图。
附图标注如下：
10、20衬底 11遮光层 21 叉指型遮光层 211遮光条 12、22缓冲层13、23沟道层 14、24第一绝缘层 15栅极 25叉指型栅极 251 栅线16、26第二绝缘层 171、271源电极 172 、272漏电极
 本发明的实施方式
以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附图的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是用以相同标号表示。
如图2A-2H所示，其为本申请的第一实施例的薄膜晶体管阵列基板形成过程中的结构示意图，包括如下步骤：
S11：如图2A所示，于衬底20上形成叉指型遮光层21；
衬底20可以为玻璃基板、塑料基板、可挠性基体或者柔性基板中的任意一种，本申请不作具体地限定。
叉指型遮光层21用于遮蔽背光，防止后续形成的沟道层受到背光影响而产生光载流子，导致薄膜晶体管的漏电流增大；叉指型遮光层21包括至少两遮光条211，遮光条211沿衬底20所在水平面的x方向平行地排列，遮光条211的一端连接在遮光主线上，遮光条211所在直线均与衬底20所在水平面的y方向平行，遮光主线所在直线与衬底所在平面的y方向垂直，衬底所在水平面的x方向和y方向相互垂直。具体在本实施例中，如图2B所示，其为叉指型遮光层在衬底20上的俯视示意图，衬底20上有多个像素区P以及位于像素区P一角的薄膜晶体管，叉指型遮光层21作为薄膜晶体管的组成部分，其也位于像素区P的一角且由两遮光条211和连接两遮光条211的遮光主线组成，两遮光条211为条形且沿衬底20所在水平面的x方向平行地排列，遮光主线所在的直线与衬底20所在水平面的x方向平行。叉指型遮光层21的制备材料为钼、铝、铜、钛中的至少一种；叉指型遮光层的厚度为500-2000埃。
本实施例通过一光罩制程Mask-1形成叉指型遮光层21。具体地，对衬底20进行清洗及烘干后，在衬底基板20上利用化学沉积的方法沉积一整面遮光层，接着在遮光层上涂布一整面光阻并对光阻进行预烘烤之后，然后采用掩膜版对整面的光阻进行曝光，再利用显影液进行显影处理，剩下未被显影液显影的光阻，再对未被光阻覆盖的遮光层进行蚀刻处理，最后去除未被显影液显影的光阻，制得叉指型遮光层21。
S12:如图2C所示，形成覆盖叉指型遮光层21和衬底20的缓冲层22。
缓冲层22起到防止衬底20中的杂质在后续工艺中向上扩散影响到沟道层性能或者隔绝热以保护衬底20的作用。缓冲层22为氧化硅层、氮化硅层或氧化硅和氧化硅的叠层，或者其他非导电层；缓冲层22的厚度为1000-5000埃；缓冲层22可采用化学气相沉积、等离子化学气相沉积、溅射沉积、真空蒸镀以及低压化学气相沉积中的任意一种制得。
S13:如图2D所示，于缓冲层22上形成沟道层23。
沟道层23用于在源电极和漏电极之间传导电流，通过调整沟道的组成可以控制电流。沟道层23为半导体材料，例如硅系半导体或金属氧化物半导体等。
具体在本实施例中，沟道层23为多晶硅层，通过在缓冲层22上形成一整面的非晶硅层，接着对非晶硅层进行一光罩制程Mask-2处理以图案化非晶硅层，然后对图案化的非晶硅进行准分子激光退火（Excimer Laser annealing，ELA）处理得到沟道层23。其中，光罩制程Mask-2的过程与上述光罩制程Mask-1相同，此处不作详述。为了调整载流子在沟道中的迁移率，可以对沟道层进行离子掺杂，例如磷掺杂或者硼掺杂等。
S14:如图2E所示，形成覆盖沟道层23和缓冲层22的第一绝缘层24；
第一绝缘层24也称为栅极绝缘层，其作用为在沟道层和叉指型栅极之间起绝缘作用。通过采用化学气相沉积、等离子化学气相沉积、溅射沉积或真空蒸镀中任意一种以形成覆盖沟道层23和缓冲层22的一整面绝缘层而得到第一绝缘层24。第一绝缘层24的制备材料可以为氧化硅、氮化硅或氮氧化硅中的任意一种。该第一绝缘层的厚度为1000-3000埃。
S15:如图2F所示，于第一绝缘层24上形成叉指型栅极25，叉指型栅极25位于叉指型遮光层21的上方。
叉指型栅极25包括至少两条栅线251，栅线251沿衬底20所在水平面的x方向平行地排列，栅线251的一端均连接在主栅线上，栅线251所在直线均与衬底20所在水平面的y方向平行，主栅线与衬底20所在水平面的y方向垂直。具体在本实施例中，叉指型栅极25由两条状栅线251和连接两条状栅线251的主栅线252组成，两条状栅线251的宽度相同，两条状栅线251的长度不作具体的限定。叉指型栅极25与叉指型遮光层21电连接，为了便于理解，在图2F中用一导线表示叉指型栅极25与叉指型遮光层21之间的电连接关系。
本实施例通过一光罩制程Mask-3形成叉指型栅极25，光罩制程Mask-3的步骤与光罩制程Mask-1相同，此处不作详述。叉指型栅极25的制备材料可以为钼、铝、铜、钛中的至少一种；叉指型栅极的厚度为500-2000埃。
本实施例通过叉指型栅极和叉指型遮光层之间电连接以及叉指型栅极设计的配合，以增加沟道的宽度，在保持单个薄膜晶体器件沟道的宽/长为W 总/L不变时，增加的沟道宽度可以使沟道所占用沟道层的宽度减小而保持单个薄膜晶体管总沟道宽度不变，使得单个薄膜晶体管器件所占面积减小，从而提高沟道层的利用率，降低生产成本。
S16:如图2G所示，形成覆盖叉指型栅极25和第一绝缘层24的第二绝缘层26；
第二绝缘层26也称为层间绝缘层，通过采用化学气相沉积、等离子化学气相沉积、溅射沉积或真空蒸镀中的任意一种以形成覆盖叉指型栅极25和第一绝缘层24的一整面的绝缘层以得到第二绝缘层26；第二绝缘层26的制备材料可以为氧化硅、氮化硅或氮氧化硅中的任意一种；该第二绝缘层的厚度为1-4微米。
本实施例再通过一光罩制程Mask-4在第一绝缘层24和第二绝缘层26上形成至少三个过孔，三个过孔均暴露部分的沟道层，为后续形成间隔设置的源电极和漏电级且源级和漏级均与沟道层连接提供条件。光罩制程Mask-4的过程与上述光罩制程Mask-1相同，此处不作详述。
S17:如图2H所示，形成至少一个第一电极271及至少两个第二电极272，第一电极271和第二电极272覆盖形成于第一绝缘层24和第二绝缘层26上的过孔以与沟道层23连接，第二电极272位于叉指型栅极25的两侧，第二电极272与第一电极271间隔地设置。
在本实施例中，通过一光罩制程Mask-5在形成过孔的层间绝缘层上形成一个第一电极271和两个第二电极272，第一电极271为源电级，第二电极272为漏电极，第一电极271位于叉指型栅极25的两条栅线251之间，两个第二电极272分别位于叉指型栅极25的两侧且与第一电极271间隔设置。第一电极271和第二电极272的制备材料包括但不限于铝、钼、钛、铬、铜、金属氧化物、金属合金或者其他导电材料，或者ITO（Indium tion oxide，氧化铟锡），或者是两层ITO和位于两层ITO之间的银组成的叠层电极。光罩制程Mask-5的步骤与光罩制程Mask-1相同，此处不作详述。其中，一个源电极和一个漏电极之间的沟道层为沟道，沟道宽度与衬底20所在水平面的y方向平行，沟道长度与衬底20所在水平面的x方向平行。
本申请还提供上述过程制得的薄膜薄膜晶体管阵列基板，包括：
叉指型遮光层21，叉指型遮光层21形成于衬底20上；
缓冲层22，缓冲层22覆盖在叉指型遮光层21和衬底20上；
沟道层23，沟道层23形成于缓冲层22上；
第一绝缘层24，第一绝缘层24覆盖在沟道层23和缓冲层22上；
叉指型栅极25，叉指型栅极25形成于第一绝缘层24上且位于叉指型遮光层21的上方；
第二绝缘层26，第二绝缘层26覆盖在叉指型栅极25和第一绝缘层24上；
至少一个第一电极271及至少两个第二电极272，第一电极271和第二电极272覆盖形成于第一绝缘层24和第二绝缘层26上的过孔以与沟道层23连接，第二电极272位于叉指型栅极25的两侧，第二电极272与第一电极271间隔地设置；其中，叉指型遮光层21与叉指型栅极25电连接。
进一步地，叉指型栅极25沿第一方向的投影与叉指型遮光层21重叠，第一方向为垂直于衬底20所在水平面且由叉指型栅极25指向叉指型遮光层25的方向。叉指型栅极25的图案与叉指型遮光层21的图案相同且相对设置，有利于提高器件的可靠性，避免出现漏电极电场过大导致器件产生击穿失效以及漏电流和寄生电容偏大的问题。
进一步地，叉指型遮光层21与叉指型栅极25通过导电层连接，导电层可以是导电材料，导电层也可以为从叉指型栅极25上延伸出且覆盖缓冲层22上过孔的栅极线。在制备叉指型栅极25时，在缓冲层22上形成过孔并在过孔中覆盖栅极层以得到连接叉指型栅极25和叉指型遮光层21的栅极线。
进一步地，缓冲层22包括依次覆盖在叉指型遮光层21和衬底上20的氮化硅层和氧化硅层，第一绝缘层24包括依次覆盖在沟道层23和缓冲层22上的氧化硅层和氮化硅层。此种缓冲层22和第一绝缘层24的组成能保证本发明薄膜晶体管阵列基板上的TFT的开启电压与现有TFT的开启电压相同。此外，缓冲层22先沉积氮化硅再沉积氧化硅也可以更好地阻止衬底20中的杂质在后续工艺中进入其他各个膜层从而影响TFT器件的电学性能，各个膜层之间的结合力也会比较好，不容易相互分离。
本申请还提供一种显示面板，该显示面板包括上述薄膜晶体管阵列基板。
综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。

Claims (20)

  1. 一种薄膜晶体管阵列基板，其中，所述薄膜晶体管阵列基板包括：
    叉指型遮光层，所述叉指型遮光层形成于衬底上；
    缓冲层，所述缓冲层覆盖在所述叉指型遮光层和所述衬底上；
    沟道层，所述沟道层形成于所述缓冲层上；
    第一绝缘层，所述第一绝缘层覆盖在所述沟道层和所述缓冲层上；
    叉指型栅极，所述叉指型栅极形成于所述第一绝缘层上且位于所述叉指型遮光层的上方；
    第二绝缘层，所述第二绝缘层覆盖在所述叉指型栅极和所述第一绝缘层上；
    至少一个第一电极及至少两个第二电极，所述第一电极和所述第二电极覆盖形成于所述第一绝缘层和所述第二绝缘层上的过孔以与所述沟道层连接，所述第二电极位于所述叉指型栅极的两侧，所述第二电极与所述第一电极间隔地设置；
    其中，所述叉指型遮光层与所述叉指型栅极电连接。
  2. 根据权利要求1所述的薄膜晶体管阵列基板，其中，所述叉指型栅极沿第一方向的投影与所述叉指型遮光层重叠，所述第一方向为垂直于所述衬底所在水平面且由所述叉指型栅极指向所述叉指型遮光层的方向。
  3. 根据权利要求1所述的薄膜晶体管阵列基板，其中，所述叉指型遮光层与所述叉指型栅极通过导电层连接。
  4. 根据权利要求3所述的薄膜晶体管阵列基板，其中，所述导电层为从所述叉指型栅极上延伸出且覆盖所述缓冲层上过孔的栅极线。
  5. 根据权利要求1所述的薄膜晶体管阵列基板，其中，所述缓冲层包括依次覆盖在所述叉指型遮光层和所述衬底上的氮化硅层和氧化硅层，所述第一绝缘层包括依次覆盖在所述沟道层和所述缓冲层上的氧化硅层和氮化硅层。
  6. 根据权利要求1所述的薄膜晶体管阵列基板，其中，所述叉指型遮光层的制备材料为钼、铝、铜、钛中的至少一种。
  7. 根据权利要求1所述薄膜晶体管阵列基板，其中，所述叉指型栅极的制备材料为钼、铝、铜、钛中的至少一种。
  8. 一种薄膜晶体管阵列基板的制造方法，其中，所述制造方法包括如下步骤：
    于衬底上形成一叉指型遮光层；
    形成覆盖所述叉指遮光层和所述衬底的缓冲层；
    于所述缓冲层上形成沟道层；
    形成覆盖所述沟道层和所述缓冲层的第一绝缘层；
    于所述第一绝缘层上形成叉指型栅极，所述叉指型栅极位于所述叉指型遮光层的上方；
    形成覆盖所述叉指型栅极和所述第一绝缘层的第二绝缘层；
    形成至少一个第一电极及至少两个第二电极，所述第一电极和所述第二电极覆盖形成于所述第一绝缘层和所述第二绝缘层上的过孔以与所述沟道层连接，所述第二电极位于所述叉指型栅极的两侧，所述第二电极与所述第一电极间隔地设置；
    其中，所述叉指型遮光层与所述叉指型栅极电连接。
  9. 根据权利要求8所述的薄膜晶体管阵列基板的制造方法，其中，所述叉指型栅极沿第一方向的投影与所述叉指型遮光层重叠，所述第一方向为垂直于所述衬底所在水平面且由所述叉指型栅极指向所述叉指型遮光层的方向。
  10. 根据权利要求8所述的薄膜晶体管阵列基板的制造方法，其中，所述叉指型遮光层与所述叉指型栅极通过导电层连接，所述导电层为从所述叉指型栅极上延伸出且覆盖所述缓冲层上过孔的栅极线。
  11. 根据权利要求8所述的薄膜晶体管阵列基板的制造方法，其中，所述缓冲层包括依次覆盖在所述叉指型遮光层和所述衬底上的氮化硅层和氧化硅层，所述第一绝缘层包括依次覆盖在所述沟道层和所述缓冲层上的氧化硅层和氮化硅层。
  12. 根据权利要求8所述的薄膜晶体管阵列基板的制造方法，其中，所述叉指型遮光层的制备材料为钼、铝、铜、钛中的至少一种。
  13. 根据权利要求8所述的薄膜晶体管阵列基板的制造方法，其中，所述叉指型栅极的制备材料为钼、铝、铜、钛中的至少一种。
  14. 一种显示面板，其中，所述显示面板包括薄膜晶体管阵列基板，所述薄膜晶体管阵列基板包括：
    叉指型遮光层，所述叉指型遮光层形成于衬底上；
    缓冲层，所述缓冲层覆盖在所述叉指型遮光层和所述衬底上；
    沟道层，所述沟道层形成于所述缓冲层上；
    第一绝缘层，所述第一绝缘层覆盖在所述沟道层和所述缓冲层上；
    叉指型栅极，所述叉指型栅极形成于所述第一绝缘层上且位于所述叉指型遮光层的上方；
    第二绝缘层，所述第二绝缘层覆盖在所述叉指型栅极和所述第一绝缘层上；
    至少一个第一电极及至少两个第二电极，所述第一电极和所述第二电极覆盖形成于所述第一绝缘层和所述第二绝缘层上的过孔以与所述沟道层连接，所述第二电极位于所述叉指型栅极的两侧，所述第二电极与所述第一电极间隔地设置；
    其中，所述叉指型遮光层与所述叉指型栅极电连接。
  15. 根据权利要求14所述的显示面板，其中，所述叉指型栅极沿第一方向的投影与所述叉指型遮光层重叠，所述第一方向为垂直于所述衬底所在水平面且由所述叉指型栅极指向所述叉指型遮光层的方向。
  16. 根据权利要求14所述的显示面板，其中，所述叉指型遮光层与所述叉指型栅极通过导电层连接。
  17. 根据权利要求16所述的显示面板，其中，所述导电层为从所述叉指型栅极上延伸出且覆盖所述缓冲层上过孔的栅极线。
  18. 根据权利要求14所述的显示面板，其中，所述缓冲层包括依次覆盖在所述叉指型遮光层和所述衬底上的氮化硅层和氧化硅层，所述第一绝缘层包括依次覆盖在所述沟道层和所述缓冲层上的氧化硅层和氮化硅层。
  19. 根据权利要求14所述的显示面板，其中，所述叉指型遮光层的制备材料为钼、铝、铜、钛中的至少一种。
  20. 根据权利要求14所述的显示面板，其中，所述叉指型栅极的制备材料为钼、铝、铜、钛中的至少一种。
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