ATE509366T1 - Verfahren zur herstellung eines halbleiterbauelements, hergestellt auf einer oberfläche aus silizium mit 110- kristallebenenrichtung - Google Patents
Verfahren zur herstellung eines halbleiterbauelements, hergestellt auf einer oberfläche aus silizium mit 110- kristallebenenrichtungInfo
- Publication number
- ATE509366T1 ATE509366T1 AT02800747T AT02800747T ATE509366T1 AT E509366 T1 ATE509366 T1 AT E509366T1 AT 02800747 T AT02800747 T AT 02800747T AT 02800747 T AT02800747 T AT 02800747T AT E509366 T1 ATE509366 T1 AT E509366T1
- Authority
- AT
- Austria
- Prior art keywords
- silicon surface
- semiconductor device
- producing
- plane direction
- crystal plane
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
- H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
- H10D64/693—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator the insulator comprising nitrogen, e.g. nitrides, oxynitrides or nitrogen-doped materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P10/00—Bonding of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/40—Crystalline structures
- H10D62/405—Orientations of crystalline planes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
- H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
- H10D64/01332—Making the insulator
- H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
- H10D64/01344—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid in a nitrogen-containing ambient, e.g. N2O oxidation
Landscapes
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Formation Of Insulating Films (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001307899A JP2003115587A (ja) | 2001-10-03 | 2001-10-03 | ＜１１０＞方位のシリコン表面上に形成された半導体装置およびその製造方法 |
| PCT/JP2002/010288 WO2003032399A1 (en) | 2001-10-03 | 2002-10-02 | Semiconductor device fabricated on surface of silicon having <110> direction of crystal plane and its production method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE509366T1 true ATE509366T1 (de) | 2011-05-15 |
Family
ID=19127284
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT02800747T ATE509366T1 (de) | 2001-10-03 | 2002-10-02 | Verfahren zur herstellung eines halbleiterbauelements, hergestellt auf einer oberfläche aus silizium mit 110- kristallebenenrichtung |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6903393B2 (de) |
| EP (1) | EP1434253B1 (de) |
| JP (1) | JP2003115587A (de) |
| KR (1) | KR100614822B1 (de) |
| AT (1) | ATE509366T1 (de) |
| IL (2) | IL156116A0 (de) |
| TW (1) | TW561588B (de) |
| WO (1) | WO2003032399A1 (de) |
Families Citing this family (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8080459B2 (en) * | 2002-09-24 | 2011-12-20 | Vishay-Siliconix | Self aligned contact in a semiconductor device and method of fabricating the same |
| JP4954437B2 (ja) * | 2003-09-12 | 2012-06-13 | 公益財団法人国際科学振興財団 | 半導体装置の製造方法 |
| AU2003264642B2 (en) | 2002-12-02 | 2009-08-06 | Tadahiro Ohmi | Semiconductor Device and Method of Manufacturing the Same |
| JP2004319907A (ja) * | 2003-04-18 | 2004-11-11 | Tadahiro Omi | 半導体装置の製造方法および製造装置 |
| JP4239676B2 (ja) | 2003-05-15 | 2009-03-18 | 信越半導体株式会社 | Ｓｏｉウェーハおよびその製造方法 |
| JP2004356114A (ja) | 2003-05-26 | 2004-12-16 | Tadahiro Omi | Ｐチャネルパワーｍｉｓ電界効果トランジスタおよびスイッチング回路 |
| JP4712292B2 (ja) * | 2003-09-02 | 2011-06-29 | 財団法人国際科学振興財団 | 半導体装置及びその製造方法 |
| JP4619637B2 (ja) * | 2003-09-09 | 2011-01-26 | 財団法人国際科学振興財団 | 半導体装置及びその製造方法 |
| US9685524B2 (en) | 2005-03-11 | 2017-06-20 | Vishay-Siliconix | Narrow semiconductor trench structure |
| EP1898456A4 (de) | 2005-06-08 | 2009-11-18 | Univ Tohoku | Plasmanitrierungsverfahren, verfahren zur herstellung eines halbleiterbauelements und plasmaverarbeitungsvorrichtung |
| JP5128064B2 (ja) | 2005-06-17 | 2013-01-23 | 国立大学法人東北大学 | 半導体装置 |
| JP2007073799A (ja) * | 2005-09-08 | 2007-03-22 | Seiko Epson Corp | 半導体装置 |
| JP2007073800A (ja) * | 2005-09-08 | 2007-03-22 | Seiko Epson Corp | 半導体装置 |
| CN101322240B (zh) | 2005-12-02 | 2011-12-14 | 国立大学法人东北大学 | 半导体装置 |
| TWI489557B (zh) * | 2005-12-22 | 2015-06-21 | 維雪 希里康尼克斯公司 | 高移動率ｐ-通道溝槽及平面型空乏模式的功率型金屬氧化物半導體場效電晶體 |
| KR101032286B1 (ko) | 2005-12-22 | 2011-05-06 | 자이단호진 고쿠사이카가쿠 신고우자이단 | 반도체 장치 |
| US7573104B2 (en) | 2006-03-06 | 2009-08-11 | International Business Machines Corporation | CMOS device on hybrid orientation substrate comprising equal mobility for perpendicular devices of each type |
| US8409954B2 (en) * | 2006-03-21 | 2013-04-02 | Vishay-Silconix | Ultra-low drain-source resistance power MOSFET |
| US8006640B2 (en) | 2006-03-27 | 2011-08-30 | Tokyo Electron Limited | Plasma processing apparatus and plasma processing method |
| CN101454892B (zh) * | 2006-05-26 | 2011-12-14 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
| US9437729B2 (en) | 2007-01-08 | 2016-09-06 | Vishay-Siliconix | High-density power MOSFET with planarized metalization |
| US9947770B2 (en) | 2007-04-03 | 2018-04-17 | Vishay-Siliconix | Self-aligned trench MOSFET and method of manufacture |
| US9484451B2 (en) | 2007-10-05 | 2016-11-01 | Vishay-Siliconix | MOSFET active area and edge termination area charge balance |
| JP2010018504A (ja) * | 2008-07-14 | 2010-01-28 | Japan Atomic Energy Agency | Ｓｉ（１１０）表面の一次元ナノ構造及びその製造方法 |
| JP4875115B2 (ja) | 2009-03-05 | 2012-02-15 | 株式会社東芝 | 半導体素子及び半導体装置 |
| US9425306B2 (en) | 2009-08-27 | 2016-08-23 | Vishay-Siliconix | Super junction trench power MOSFET devices |
| US9443974B2 (en) * | 2009-08-27 | 2016-09-13 | Vishay-Siliconix | Super junction trench power MOSFET device fabrication |
| US9431530B2 (en) | 2009-10-20 | 2016-08-30 | Vishay-Siliconix | Super-high density trench MOSFET |
| US9412883B2 (en) | 2011-11-22 | 2016-08-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods and apparatus for MOS capacitors in replacement gate process |
| US9842911B2 (en) | 2012-05-30 | 2017-12-12 | Vishay-Siliconix | Adaptive charge balanced edge termination |
| US9209304B2 (en) * | 2014-02-13 | 2015-12-08 | Taiwan Semiconductor Manufacturing Co., Ltd. | N/P MOS FinFET performance enhancement by specific orientation surface |
| US9887259B2 (en) | 2014-06-23 | 2018-02-06 | Vishay-Siliconix | Modulated super junction power MOSFET devices |
| EP3183753B1 (de) | 2014-08-19 | 2025-03-19 | Vishay-Siliconix | Mosfet-halbleiteranordnung |
| KR102098996B1 (ko) | 2014-08-19 | 2020-04-08 | 비쉐이-실리코닉스 | 초접합 금속 산화물 반도체 전계 효과 트랜지스터 |
| DE102020209092A1 (de) * | 2020-07-21 | 2022-01-27 | Sicrystal Gmbh | Kristallstrukturorientierung in Halbleiter-Halbzeugen und Halbleitersubstraten zum Verringern von Sprüngen und Verfahren zum Einstellen von dieser |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3476991A (en) * | 1967-11-08 | 1969-11-04 | Texas Instruments Inc | Inversion layer field effect device with azimuthally dependent carrier mobility |
| JPS5432451Y1 (de) * | 1975-06-19 | 1979-10-08 | ||
| JPS6170748A (ja) * | 1984-09-14 | 1986-04-11 | Hitachi Ltd | 半導体装置 |
| EP0354449A3 (de) * | 1988-08-08 | 1991-01-02 | Seiko Epson Corporation | Einkristall-Halbleitersubstrat |
| JP3038939B2 (ja) * | 1991-02-08 | 2000-05-08 | 日産自動車株式会社 | 半導体装置 |
| JP4521542B2 (ja) * | 1999-03-30 | 2010-08-11 | ルネサスエレクトロニクス株式会社 | 半導体装置および半導体基板 |
| JP4397491B2 (ja) * | 1999-11-30 | 2010-01-13 | 財団法人国際科学振興財団 | １１１面方位を表面に有するシリコンを用いた半導体装置およびその形成方法 |
| TW498544B (en) * | 2000-03-13 | 2002-08-11 | Tadahiro Ohmi | Flash memory device, manufacturing and its dielectric film formation |
| US6586792B2 (en) * | 2001-03-15 | 2003-07-01 | Micron Technology, Inc. | Structures, methods, and systems for ferroelectric memory transistors |
| US6514828B2 (en) * | 2001-04-20 | 2003-02-04 | Micron Technology, Inc. | Method of fabricating a highly reliable gate oxide |
| JP2010018504A (ja) * | 2008-07-14 | 2010-01-28 | Japan Atomic Energy Agency | Ｓｉ（１１０）表面の一次元ナノ構造及びその製造方法 |
-
2001
- 2001-10-03 JP JP2001307899A patent/JP2003115587A/ja active Pending
-
2002
- 2002-10-02 AT AT02800747T patent/ATE509366T1/de not_active IP Right Cessation
- 2002-10-02 EP EP02800747A patent/EP1434253B1/de not_active Expired - Lifetime
- 2002-10-02 KR KR1020037010850A patent/KR100614822B1/ko not_active Expired - Fee Related
- 2002-10-02 US US10/416,969 patent/US6903393B2/en not_active Expired - Fee Related
- 2002-10-02 IL IL15611602A patent/IL156116A0/xx unknown
- 2002-10-02 WO PCT/JP2002/010288 patent/WO2003032399A1/ja not_active Ceased
- 2002-10-03 TW TW091122832A patent/TW561588B/zh not_active IP Right Cessation
-
2003
- 2003-05-26 IL IL156116A patent/IL156116A/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| EP1434253A1 (de) | 2004-06-30 |
| IL156116A (en) | 2009-09-22 |
| US20040032003A1 (en) | 2004-02-19 |
| JP2003115587A (ja) | 2003-04-18 |
| WO2003032399A1 (en) | 2003-04-17 |
| US6903393B2 (en) | 2005-06-07 |
| TW561588B (en) | 2003-11-11 |
| IL156116A0 (en) | 2003-12-23 |
| EP1434253A4 (de) | 2006-10-04 |
| KR20040037278A (ko) | 2004-05-06 |
| KR100614822B1 (ko) | 2006-08-25 |
| EP1434253B1 (de) | 2011-05-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |