SE0302108D0 - Ldmos transistor device, integrated circuit, and fabrication method thereof - Google Patents

Ldmos transistor device, integrated circuit, and fabrication method thereof

Info

Publication number
SE0302108D0
SE0302108D0 SE0302108A SE0302108A SE0302108D0 SE 0302108 D0 SE0302108 D0 SE 0302108D0 SE 0302108 A SE0302108 A SE 0302108A SE 0302108 A SE0302108 A SE 0302108A SE 0302108 D0 SE0302108 D0 SE 0302108D0
Authority
SE
Sweden
Prior art keywords
gate
transistor device
region
ldmos transistor
ldmos
Prior art date
Application number
SE0302108A
Other languages
English (en)
Other versions
SE0302108L (sv
SE526207C2 (sv
Inventor
Torkel Arnborg
Ulf Smith
Original Assignee
Infineon Technologies Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag filed Critical Infineon Technologies Ag
Priority to SE0302108A priority Critical patent/SE526207C2/sv
Publication of SE0302108D0 publication Critical patent/SE0302108D0/sv
Priority to US10/870,574 priority patent/US7391084B2/en
Priority to DE102004030848A priority patent/DE102004030848B4/de
Publication of SE0302108L publication Critical patent/SE0302108L/sv
Publication of SE526207C2 publication Critical patent/SE526207C2/sv
Priority to US12/119,773 priority patent/US7563682B2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4983—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET with a lateral structure, e.g. a Polysilicon gate with a lateral doping variation or with a lateral composition variation or characterised by the sidewalls being composed of conductive, resistive or dielectric material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66681—Lateral DMOS transistors, i.e. LDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
SE0302108A 2003-07-18 2003-07-18 Ldmos-transistoranordning, integrerad krets och framställningsmetod därav SE526207C2 (sv)

Priority Applications (4)

Application Number Priority Date Filing Date Title
SE0302108A SE526207C2 (sv) 2003-07-18 2003-07-18 Ldmos-transistoranordning, integrerad krets och framställningsmetod därav
US10/870,574 US7391084B2 (en) 2003-07-18 2004-06-17 LDMOS transistor device, integrated circuit, and fabrication method thereof
DE102004030848A DE102004030848B4 (de) 2003-07-18 2004-06-25 LDMOS-Transistor-Vorrichtung in einem integrierten Schaltkreis und Verfahren zur Herstellung eines integrierten Schaltkreises mit einem LDMOS-Transistor
US12/119,773 US7563682B2 (en) 2003-07-18 2008-05-13 LDMOS transistor device, integrated circuit, and fabrication method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE0302108A SE526207C2 (sv) 2003-07-18 2003-07-18 Ldmos-transistoranordning, integrerad krets och framställningsmetod därav

Publications (3)

Publication Number Publication Date
SE0302108D0 true SE0302108D0 (sv) 2003-07-18
SE0302108L SE0302108L (sv) 2005-01-19
SE526207C2 SE526207C2 (sv) 2005-07-26

Family

ID=27786643

Family Applications (1)

Application Number Title Priority Date Filing Date
SE0302108A SE526207C2 (sv) 2003-07-18 2003-07-18 Ldmos-transistoranordning, integrerad krets och framställningsmetod därav

Country Status (3)

Country Link
US (2) US7391084B2 (sv)
DE (1) DE102004030848B4 (sv)
SE (1) SE526207C2 (sv)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060267675A1 (en) * 2005-05-24 2006-11-30 International Rectifier Corporation PMOS current mirror with cascaded PMOS transistors and zero voltage gate threshold transistor
US7939881B2 (en) * 2007-02-09 2011-05-10 Sanyo Electric Co., Ltd. Semiconductor device
US8110465B2 (en) 2007-07-30 2012-02-07 International Business Machines Corporation Field effect transistor having an asymmetric gate electrode
WO2009133485A1 (en) * 2008-04-30 2009-11-05 Nxp B.V. A field effect transistor and a method of manufacturing the same
US20100237439A1 (en) * 2009-03-18 2010-09-23 Ming-Cheng Lee High-voltage metal-dielectric-semiconductor device and method of the same
US9064796B2 (en) 2012-08-13 2015-06-23 Infineon Technologies Ag Semiconductor device and method of making the same
CN103035730B (zh) * 2012-12-07 2015-12-02 上海华虹宏力半导体制造有限公司 射频ldmos器件及其制造方法
CN103762228A (zh) * 2013-12-31 2014-04-30 上海新傲科技股份有限公司 具有复合金属栅极结构的横向功率器件
US9721987B2 (en) * 2014-02-03 2017-08-01 Taiwan Semiconductor Manufacturing Co., Ltd. Pixel with transistor gate covering photodiode

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04162726A (ja) 1990-10-26 1992-06-08 Matsushita Electric Works Ltd 絶縁ゲート型電界効果半導体装置
US5252848A (en) * 1992-02-03 1993-10-12 Motorola, Inc. Low on resistance field effect transistor
JPH08213596A (ja) * 1995-02-02 1996-08-20 Yokogawa Electric Corp 半導体集積回路の製造方法
US5851920A (en) * 1996-01-22 1998-12-22 Motorola, Inc. Method of fabrication of metallization system
DE69630944D1 (de) * 1996-03-29 2004-01-15 St Microelectronics Srl Hochspannungsfester MOS-Transistor und Verfahren zur Herstellung
SE513283C2 (sv) * 1996-07-26 2000-08-14 Ericsson Telefon Ab L M MOS-transistorstruktur med utsträckt driftregion
US6080629A (en) * 1997-04-21 2000-06-27 Advanced Micro Devices, Inc. Ion implantation into a gate electrode layer using an implant profile displacement layer
WO1999040614A2 (en) 1998-02-09 1999-08-12 Koninklijke Philips Electronics N.V. Method of manufacturing a semiconductor device with linearly doping profile
US6211555B1 (en) 1998-09-29 2001-04-03 Lsi Logic Corporation Semiconductor device with a pair of transistors having dual work function gate electrodes
US6380055B2 (en) * 1998-10-22 2002-04-30 Advanced Micro Devices, Inc. Dopant diffusion-retarding barrier region formed within polysilicon gate layer
US6306738B1 (en) 1999-06-17 2001-10-23 Advanced Micro Devices, Inc. Modulation of gate polysilicon doping profile by sidewall implantation
US6768149B1 (en) * 2000-10-05 2004-07-27 Ess Technology, Inc. Tapered threshold reset FET for CMOS imagers
US6791106B2 (en) * 2001-12-26 2004-09-14 Kabushiki Kaisha Toshiba Semiconductor device and method of manufacturing the same

Also Published As

Publication number Publication date
SE0302108L (sv) 2005-01-19
US7391084B2 (en) 2008-06-24
US20080261359A1 (en) 2008-10-23
US20050012147A1 (en) 2005-01-20
SE526207C2 (sv) 2005-07-26
DE102004030848B4 (de) 2009-06-04
DE102004030848A1 (de) 2005-03-17
US7563682B2 (en) 2009-07-21

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Legal Events

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