ATE358895T1 - Verfahren zur herstellung einer elektronischen anordung - Google Patents
Verfahren zur herstellung einer elektronischen anordungInfo
- Publication number
- ATE358895T1 ATE358895T1 AT04714870T AT04714870T ATE358895T1 AT E358895 T1 ATE358895 T1 AT E358895T1 AT 04714870 T AT04714870 T AT 04714870T AT 04714870 T AT04714870 T AT 04714870T AT E358895 T1 ATE358895 T1 AT E358895T1
- Authority
- AT
- Austria
- Prior art keywords
- producing
- electronic arrangement
- semiconductor material
- transistor
- photoresist
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/355—Non-linear optics characterised by the materials used
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
- H10K71/233—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/355—Non-linear optics characterised by the materials used
- G02F1/361—Organic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03100574 | 2003-03-07 |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE358895T1 true ATE358895T1 (de) | 2007-04-15 |
Family
ID=32946925
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT04714870T ATE358895T1 (de) | 2003-03-07 | 2004-02-26 | Verfahren zur herstellung einer elektronischen anordung |
Country Status (8)
Country | Link |
---|---|
US (1) | US7820999B2 (de) |
EP (1) | EP1604409B1 (de) |
JP (1) | JP2006520101A (de) |
KR (1) | KR20050109963A (de) |
CN (1) | CN1757124B (de) |
AT (1) | ATE358895T1 (de) |
DE (1) | DE602004005685T2 (de) |
WO (1) | WO2004079833A1 (de) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1791990B (zh) * | 2003-05-20 | 2010-07-28 | 皇家飞利浦电子股份有限公司 | 场效应晶体管布置和场效应晶体管布置的制造方法 |
US7463336B2 (en) * | 2004-04-14 | 2008-12-09 | Asml Netherlands B.V. | Device manufacturing method and apparatus with applied electric field |
JP4815765B2 (ja) * | 2004-07-29 | 2011-11-16 | ソニー株式会社 | 有機半導体装置の製造方法 |
KR100669752B1 (ko) * | 2004-11-10 | 2007-01-16 | 삼성에스디아이 주식회사 | 유기 박막 트랜지스터, 이의 제조 방법 및 이를 구비한평판표시장치 |
GB0427563D0 (en) | 2004-12-16 | 2005-01-19 | Plastic Logic Ltd | A method of semiconductor patterning |
JP2006261312A (ja) * | 2005-03-16 | 2006-09-28 | Ricoh Co Ltd | 半導体装置とその製造方法およびアクティブマトリックス表示装置 |
JP2006261374A (ja) * | 2005-03-17 | 2006-09-28 | Ricoh Co Ltd | 半導体装置及びそれを用いた画像表示装置並びに半導体装置の製造方法 |
JP2006261408A (ja) * | 2005-03-17 | 2006-09-28 | Ricoh Co Ltd | 半導体装置及びそれを用いた画像表示装置 |
JP5023437B2 (ja) * | 2005-04-01 | 2012-09-12 | セイコーエプソン株式会社 | 半導体装置の製造方法、電気光学装置の製造方法、及び電子機器の製造方法 |
KR100647693B1 (ko) | 2005-05-24 | 2006-11-23 | 삼성에스디아이 주식회사 | 유기박막 트랜지스터 및 그의 제조방법과 유기 박막트랜지스터를 구비한 유기전계 발광표시장치 |
KR20070033144A (ko) * | 2005-09-21 | 2007-03-26 | 삼성전자주식회사 | 표시장치와 표시장치의 제조방법 |
US7397086B2 (en) * | 2005-12-23 | 2008-07-08 | Xerox Corporation | Top-gate thin-film transistor |
CN101454659A (zh) * | 2006-05-29 | 2009-06-10 | 皇家飞利浦电子股份有限公司 | 用于感测应用的有机场效应晶体管 |
DE102006037433B4 (de) | 2006-08-09 | 2010-08-19 | Ovd Kinegram Ag | Verfahren zur Herstellung eines Mehrschichtkörpers sowie Mehrschichtkörper |
GB0912034D0 (en) | 2009-07-10 | 2009-08-19 | Cambridge Entpr Ltd | Patterning |
GB0913456D0 (en) | 2009-08-03 | 2009-09-16 | Cambridge Entpr Ltd | Printed electronic device |
DE102011086689B4 (de) * | 2011-11-21 | 2017-02-16 | Osram Oled Gmbh | Verfahren zum Herstellen eines opto-elektronischen Bauelements |
KR102027361B1 (ko) | 2013-02-13 | 2019-10-01 | 삼성전자주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법과 상기 박막 트랜지스터 표시판을 포함하는 전자 소자 |
JP6167016B2 (ja) * | 2013-10-31 | 2017-07-19 | 富士フイルム株式会社 | 積層体、有機半導体製造用キットおよび有機半導体製造用レジスト組成物 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2813428B2 (ja) * | 1989-08-17 | 1998-10-22 | 三菱電機株式会社 | 電界効果トランジスタ及び該電界効果トランジスタを用いた液晶表示装置 |
JP3069139B2 (ja) * | 1990-03-16 | 2000-07-24 | 旭化成工業株式会社 | 分散型電界発光素子 |
JPH0555568A (ja) * | 1991-08-28 | 1993-03-05 | Asahi Chem Ind Co Ltd | 有機薄膜トランジスタ |
US5574291A (en) * | 1994-12-09 | 1996-11-12 | Lucent Technologies Inc. | Article comprising a thin film transistor with low conductivity organic layer |
US6326640B1 (en) * | 1996-01-29 | 2001-12-04 | Motorola, Inc. | Organic thin film transistor with enhanced carrier mobility |
JP2002502557A (ja) * | 1998-02-09 | 2002-01-22 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 埋込チャネルfetを含む半導体デバイスを製造する方法 |
JP3597468B2 (ja) * | 1998-06-19 | 2004-12-08 | シン フイルム エレクトロニクス エイエスエイ | 集積無機/有機相補型薄膜トランジスタ回路およびその製造方法 |
JP3592535B2 (ja) * | 1998-07-16 | 2004-11-24 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
JP2000066233A (ja) * | 1998-08-17 | 2000-03-03 | Hitachi Ltd | 液晶表示装置 |
EP1198851B1 (de) * | 1999-07-21 | 2012-03-14 | E Ink Corporation | Reaktive herstellung von dielektrischen schichten und schutz von organischen schichten in organischen halbleiteranordnungen |
JP2002026326A (ja) * | 2000-06-26 | 2002-01-25 | Koninkl Philips Electronics Nv | ボトムゲート形薄膜トランジスタ及びその製造方法並びにこれを用いた液晶表示装置 |
GB0028867D0 (en) * | 2000-11-28 | 2001-01-10 | Avecia Ltd | Field effect translators,methods for the manufacture thereof and materials therefor |
JP4572501B2 (ja) * | 2002-02-27 | 2010-11-04 | コニカミノルタホールディングス株式会社 | 有機薄膜トランジスタの製造方法 |
CN1282259C (zh) * | 2003-03-03 | 2006-10-25 | 中国科学院长春应用化学研究所 | 含有保护层的有机半导体场效应晶体管及制作方法 |
-
2004
- 2004-02-26 CN CN2004800061052A patent/CN1757124B/zh not_active Expired - Fee Related
- 2004-02-26 EP EP04714870A patent/EP1604409B1/de not_active Expired - Lifetime
- 2004-02-26 JP JP2006506646A patent/JP2006520101A/ja active Pending
- 2004-02-26 AT AT04714870T patent/ATE358895T1/de not_active IP Right Cessation
- 2004-02-26 US US10/547,591 patent/US7820999B2/en not_active Expired - Fee Related
- 2004-02-26 KR KR1020057016480A patent/KR20050109963A/ko not_active Application Discontinuation
- 2004-02-26 WO PCT/IB2004/050154 patent/WO2004079833A1/en active IP Right Grant
- 2004-02-26 DE DE602004005685T patent/DE602004005685T2/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP2006520101A (ja) | 2006-08-31 |
CN1757124B (zh) | 2010-06-16 |
DE602004005685T2 (de) | 2007-12-27 |
DE602004005685D1 (de) | 2007-05-16 |
WO2004079833A1 (en) | 2004-09-16 |
CN1757124A (zh) | 2006-04-05 |
US7820999B2 (en) | 2010-10-26 |
KR20050109963A (ko) | 2005-11-22 |
EP1604409A1 (de) | 2005-12-14 |
EP1604409B1 (de) | 2007-04-04 |
US20060220126A1 (en) | 2006-10-05 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |