CN1282259C - 含有保护层的有机半导体场效应晶体管及制作方法 - Google Patents

含有保护层的有机半导体场效应晶体管及制作方法 Download PDF

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CN1282259C
CN1282259C CNB031050247A CN03105024A CN1282259C CN 1282259 C CN1282259 C CN 1282259C CN B031050247 A CNB031050247 A CN B031050247A CN 03105024 A CN03105024 A CN 03105024A CN 1282259 C CN1282259 C CN 1282259C
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effect transistor
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CN1437272A (zh
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闫东航
袁剑峰
严铉俊
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Changchun Flexible Display Technology Co ltd
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Changchun Institute of Applied Chemistry of CAS
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    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
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    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
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Abstract

一种含有保护层的有机半导体场效应晶体管，包括衬底(1)，栅电极(2)形成在衬底(1)上，栅绝缘层(3)形成在衬底(1)和栅电极(2)上，第一半导体层(4)形成在栅绝缘层(3)上，第二半导体层(6)形成在第一半导体层(4)上，保护层(5)形成在第二半导体层(6)上，源/漏电级(7)形成在保护层(5)刻蚀孔处和半导体层(4)上。本发明的特征是采用两种或两种以上有机材料来共同构成有源半导体层，含有保护层。

Description

含有保护层的有机半导体场效应晶体管及制作方法
技术领域
本发明涉及场效应晶体管(FET)及其制作方法，特别涉及含有保护层的有机场效应晶体管及其制作方法。
背景技术
近年来，有关有机半导体材料的研究异常活跃。有机场效应晶体管的性能已经超过非晶硅薄膜晶体管(a-Si:H TFT)的水平。特别是一些有机小分子齐聚物(如Pentacene、Tetracene等)的室温载流子迁移率已经超过1(平方厘米每伏每秒)。因此，有机场效应晶体管在柔性集成电路和有源矩阵显示等方面具有实际应用的潜力。中国发明专利CN1398004A公布了夹心型的有机场效应晶体管，提供了采用二种或二种以上有机半导体材料构成新型半导体的方法，采用这种方法可以有效提高有机场效应晶体管的综合性能，特别是可以有效降低阈值电压。本发明借鉴中国发明专利CN1398004A，采用二种或二种以上有机半导体材料共同构成有源半导体层，增加保护层来精确加工源电极和漏电极的图形，并防止加工过程中溶剂等对有源半导体层的污染。
发明内容
本发明的目的是提供含有保护层的有机场效应晶体管器件。
本发明的另一目的是提供制作含有保护层的有机场效应晶体管的方法。
为实现上述目的，根据本发明的一方面，场效应晶体管包括衬底1，在衬底1上形成栅电极2，栅绝缘层3形成在衬底1和栅电极2上，第一半导体层4形成在栅绝缘层3上，第二半导体层6形成在第一半导体层4上，保护层5形成在第二半导体层6上，源/漏电级7形成在保护层5的刻蚀孔处和半导体层4或6上。
根据本发明的另一方面，场效应晶体管的制作方法包括步骤：
a.在衬底上形成导电材料构成的栅电极；
b.在衬底和栅电极上形成绝缘层；
c.在绝缘层上形成第一半导体层；
d.在第一半导体层上形成第二半导体层；
e.在第二半导体层上形成保护层；
f.在保护层刻蚀孔处和半导体层上形成源电极和漏电极。
本发明的原理是采用双层有机半导体共同构成的有源半导体层来实现高功能场效应晶体管性质，采用保护层来实现源电极和漏电极图形的精确加工和防止加工过程污染有源半导体层。
附图说明
图1是本发明含有保护层的有机场效应晶体管的实施例结构。
图2是本发明含有保护层的有机场效应晶体管的另一实施例结构。
图3是本发场效应晶体管实施例1的转移特性曲线。
图4是本发场效应晶体管实施例1的输出特性曲线。
实施方式
实施例1
结合附图描述本发明，图1是本发明含有保护层的有机场效应晶体管的结构，将导电材料层设置于衬底1上构成栅电极2，绝缘材料设置于衬底和栅电极上构成栅绝缘层3，半导体材料设置于栅绝缘层上构成第一半导体层4，半导体材料设置于第一半导体层上构成第二半导体层6，绝缘材料5设置于第二半导体层上，源漏电极7设置于刻蚀过的保护层和第二半导体层上。
实验所用酞箐铜(CuPc)和酞箐锌(ZnPc)是商业产品，经过升华纯化后使用。
在7059玻璃衬底或柔性塑料衬底1上用射频磁控溅射方法镀上一层金属Ta膜，厚度约200纳米，并光刻成栅极形状2；在栅极上用直流磁控溅射方法反应溅射一层Ta2O5作为栅绝缘层3，厚度约100纳米；然后采用分子气相沉积方法制备厚度约30纳米的酞箐铜，在酞箐铜上继续沉积厚度约10纳米的酞箐锌，在酞箐锌上旋涂10纳米的光敏聚酰亚胺或PVA保护层，曝光和显影后，干法刻蚀保护层和第二半导体层，再沉积厚度约60纳米Au并形成源漏电极7。
酞箐铜和酞箐锌场效应晶体管的输出特性曲线见图3，其饱和区的空穴载流子迁移率为0.04cm2/V.s，阈值电压为-5.5V，开关电流比为4×104。
本发明不限于上述实施例。一般来说，本专利所公开的场效应晶体管可以加工形成二维和三维的集成器件中的元件。这些集成器件可能应用在柔性集成电路、有源矩阵显示等方面。使用基于本发明的场效应晶体管元件可以低温加工。

Claims (4)

1、一种含有保护层的有机半导体场效应晶体管，包括衬底(1)，栅电极(2)形成在衬底(1)上，栅绝缘层(3)形成在衬底(1)和栅电极(2)上，第一半导体层(4)形成在栅绝缘层(3)上，第二半导体层(6)形成在第一半导体层(4)上，保护层(5)形成在第二半导体层(6)上，源/漏电极(7)形成半导体层(4)上和保护层(5)刻蚀孔处。
2、按权利要求1所述的场效应晶体管，其特征在于所述的半导体层(4)或(6)分别由酞菁铜和酞菁锌构成。
3、按权利要求1所述的场效应晶体管，其特征在于所述的保护层是聚酰亚胺或PVA。
4、一种有机半导体场效应晶体管的制作方法，包括步骤：
a、在衬底上形成导电材料构成的栅电极；
b、在衬底和栅电极上形成绝缘层；
c、在绝缘层上形成第一半导体层；
d、在第一半导体层上形成第二半导体层；
e、在第二半导体层上形成保护层；
f、在保护层刻蚀孔处和半导体层上形成源电极和漏电极。
CNB031050247A 2003-03-03 2003-03-03 含有保护层的有机半导体场效应晶体管及制作方法 Expired - Lifetime CN1282259C (zh)

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JP2004017237A JP2004266267A (ja) 2003-03-03 2004-01-26 保護層を含む有機半導体電界効果トランジスタ及びその製造方法
KR1020040008308A KR20040078548A (ko) 2003-03-03 2004-02-09 보호층을 포함한 유기 반도체 전계효과 트랜지스터 및이의 제조방법

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