JP4989907B2 - 半導体装置及び電子機器 - Google Patents
半導体装置及び電子機器 Download PDFInfo
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- JP4989907B2 JP4989907B2 JP2006072089A JP2006072089A JP4989907B2 JP 4989907 B2 JP4989907 B2 JP 4989907B2 JP 2006072089 A JP2006072089 A JP 2006072089A JP 2006072089 A JP2006072089 A JP 2006072089A JP 4989907 B2 JP4989907 B2 JP 4989907B2
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- organic semiconductor
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- 238000004770 highest occupied molecular orbital Methods 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- DYIZHKNUQPHNJY-UHFFFAOYSA-N oxorhenium Chemical compound [Re]=O DYIZHKNUQPHNJY-UHFFFAOYSA-N 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000012264 purified product Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910003449 rhenium oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 230000001502 supplementing effect Effects 0.000 description 1
- 229910001935 vanadium oxide Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- GWDUZCIBPDVBJM-UHFFFAOYSA-L zinc;2-(2-hydroxyphenyl)-3h-1,3-benzothiazole-2-carboxylate Chemical compound [Zn+2].OC1=CC=CC=C1C1(C([O-])=O)SC2=CC=CC=C2N1.OC1=CC=CC=C1C1(C([O-])=O)SC2=CC=CC=C2N1 GWDUZCIBPDVBJM-UHFFFAOYSA-L 0.000 description 1
- QEPMORHSGFRDLW-UHFFFAOYSA-L zinc;2-(2-hydroxyphenyl)-3h-1,3-benzoxazole-2-carboxylate Chemical compound [Zn+2].OC1=CC=CC=C1C1(C([O-])=O)OC2=CC=CC=C2N1.OC1=CC=CC=C1C1(C([O-])=O)OC2=CC=CC=C2N1 QEPMORHSGFRDLW-UHFFFAOYSA-L 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
- H10K10/486—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions the channel region comprising two or more active layers, e.g. forming pn heterojunctions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
- H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/211—Fullerenes, e.g. C60
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/311—Phthalocyanine
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/655—Aromatic compounds comprising a hetero atom comprising only sulfur as heteroatom
Description
(実施の形態1)
(実施の形態2)
(実施の形態3)
(実施の形態4)
また、ソース電極、ドレイン電極とペンタセンの単結晶との接触を改善した結果、キャリアの注入障壁を低下させて、オン電流を増大させ、閾値電圧のシフトを低減させることができる。また、ペンタセンの有機半導体層107を単結晶の被形成面にあらかじめ成膜しているため、ペンタセンの単結晶108だけでは不完全なチャネル形成になることを防止して、ペンタセンの有機半導体層107がチャネル未形成部を補償するチャネルとして動作し、歩留まり良く有機トランジスタ109を得ることができた。またペンタセンの単結晶を選択的に成長させ、有機半導体材料(ペンタセン)のロスを低減することが出来た。
102 ゲート電極
103 ゲート絶縁体層
104 ソース電極
105 ドレイン電極
106 有機トランジスタ形成領域
107 有機半導体層
108 単結晶
109 有機トランジスタ
110 有機半導体装置
201 基板
202 ゲート電極
203 ゲート絶縁体層
204 有機トランジスタ形成領域
205 有機半導体層
206 単結晶
207 ソース電極
208 ドレイン電極
209 有機トランジスタ
210 有機半導体装置
301 基板
302 ゲート電極
303 ゲート絶縁体層
304 ソース電極
305 陽極
306 有機半導体装置形成領域
307 ホール輸送性有機半導体層
308 電子輸送性有機半導体層
309 陰極
310 発光素子
311 有機半導体層
312 単結晶
313 有機トランジスタ
314 有機半導体装置
315 表示装置
901 基板
902 ソース電極
903 ドレイン電極
904 有機半導体層
905 有機半導体層
906 ゲート絶縁体層
907 ゲート電極
908 有機トランジスタ
911 基板
912 有機半導体層
913 有機半導体層
914 ソース電極
915 ドレイン電極
916 ゲート絶縁体層
917 ゲート電極
918 有機トランジスタ
9101 本体
9102 表示部
9401 本体
9402 表示部
9501 本体
9502 表示部
9541 支持体
9542 表示部
9543 集積回路チップ
Claims (8)
- ゲート電極と、
前記ゲート電極上のゲート絶縁体層と、
前記ゲート絶縁体層を介して前記ゲート電極上の第1の有機半導体層と、
前記第1の有機半導体層上の第2の有機半導体層と、を有し、
前記第1の有機半導体層と前記第2の有機半導体層とは同一の材料から形成されており、
前記第1の有機半導体層は、2nm以上10nm以下の膜厚であり、
前記第2の有機半導体層は、前記第1の有機半導体層より結晶性が高いことを特徴とする半導体装置。 - ゲート電極と、
前記ゲート電極上のゲート絶縁体層と、
前記ゲート絶縁体層を介して前記ゲート電極上の第1の有機半導体層と、
前記第1の有機半導体層上の第2の有機半導体層と、を有し、
前記第1の有機半導体層と前記第2の有機半導体層とは同一の材料から形成されており、
前記第1の有機半導体層は、2nm以上10nm以下の膜厚であり、
前記第2の有機半導体層は、前記第1の有機半導体層より結晶粒が大きいことを特徴とする半導体装置。 - ゲート電極と、
前記ゲート電極上のゲート絶縁体層と、
前記ゲート絶縁体層を介して前記ゲート電極上の第1の有機半導体層と、
前記第1の有機半導体層上の第2の有機半導体層と、を有し、
前記第1の有機半導体層と前記第2の有機半導体層とは同一の材料から形成されており、
前記第1の有機半導体層は、2nm以上10nm以下の膜厚であり、
前記第1の有機半導体層は多結晶又は非晶質を有し、
前記第2の有機半導体層は単結晶を有することを特徴とする半導体装置。 - ゲート電極と、
前記ゲート電極上のゲート絶縁体層と、
前記ゲート絶縁体層を介して前記ゲート電極上の第1の有機半導体層と、
前記第1の有機半導体層上の第2の有機半導体層と、を有し、
前記第1の有機半導体層と前記第2の有機半導体層とは同一の材料から形成されており、
前記第1の有機半導体層は、2nm以上10nm以下の膜厚であり、
前記第1の有機半導体層は非晶質を有し、
前記第2の有機半導体層は多結晶を有することを特徴とする半導体装置。 - ゲート電極と、
前記ゲート電極上のゲート絶縁体層と、
前記ゲート絶縁体層上の、第1の電極及び第2の電極と、
前記第1の電極上の一部に設けられた発光層と、
前記発光層上の第3の電極と、
前記第1の電極及び前記第2の電極に接し、かつ、少なくとも前記第1の電極と前記第2の電極との間の前記ゲート絶縁体層上に設けられた第1の有機半導体層と、
前記第1の有機半導体層上の第2の有機半導体層と、を有し、
前記第1の有機半導体層と前記第2の有機半導体層とは同一の材料から形成されており、
前記第1の有機半導体層は、2nm以上10nm以下の膜厚であり、
前記第2の有機半導体層は、前記第1の有機半導体層より結晶性が高いことを特徴とする半導体装置。 - ゲート電極と、
前記ゲート電極上のゲート絶縁体層と、
前記ゲート絶縁体層上の、第1の電極及び第2の電極と、
前記第1の電極上の一部に設けられた発光層と、
前記発光層上の第3の電極と、
前記第1の電極及び前記第2の電極に接し、かつ、少なくとも前記第1の電極と前記第2の電極との間の前記ゲート絶縁体層上に設けられた第1の有機半導体層と、
前記第1の有機半導体層上の第2の有機半導体層と、を有し、
前記第1の有機半導体層と前記第2の有機半導体層とは同一の材料から形成されており、
前記第1の有機半導体層は、2nm以上10nm以下の膜厚であり、
前記第2の有機半導体層は、前記第1の有機半導体層より結晶粒が大きいことを特徴とする半導体装置。 - 請求項1乃至6のいずれか一において、
前記第1の有機半導体層と前記第2の有機半導体層とは、アセン系材料、チオフェン−オリゴマー系材料、フラーレン(C60)、ペリレン及び芳香族アミン化合物から選ばれる材料をそれぞれ含むことを特徴とする半導体装置。 - 請求項1乃至7のいずれか一に記載の半導体装置を備えた電子機器。
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JP6116018B2 (ja) * | 2015-01-29 | 2017-04-19 | 国立大学法人 東京大学 | 有機半導体素子 |
CN104849336B (zh) * | 2015-04-22 | 2018-01-19 | 电子科技大学 | 有机场效应晶体管气体传感器及其制备方法 |
KR102106732B1 (ko) * | 2019-06-17 | 2020-05-06 | 연세대학교 산학협력단 | 유기 트랜지스터, 유기 커패시터, 유기 전자 소자의 제조 방법 및 유기 트랜지스터의 제조 방법 |
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JP2813428B2 (ja) * | 1989-08-17 | 1998-10-22 | 三菱電機株式会社 | 電界効果トランジスタ及び該電界効果トランジスタを用いた液晶表示装置 |
US5315129A (en) * | 1990-08-20 | 1994-05-24 | University Of Southern California | Organic optoelectronic devices and methods |
TW222345B (en) * | 1992-02-25 | 1994-04-11 | Semicondustor Energy Res Co Ltd | Semiconductor and its manufacturing method |
TW293172B (ja) | 1994-12-09 | 1996-12-11 | At & T Corp | |
US6278127B1 (en) * | 1994-12-09 | 2001-08-21 | Agere Systems Guardian Corp. | Article comprising an organic thin film transistor adapted for biasing to form a N-type or a P-type transistor |
JP3334772B2 (ja) | 1995-02-20 | 2002-10-15 | 日野自動車株式会社 | 車両用シートの固定装置 |
US5946551A (en) | 1997-03-25 | 1999-08-31 | Dimitrakopoulos; Christos Dimitrios | Fabrication of thin film effect transistor comprising an organic semiconductor and chemical solution deposited metal oxide gate dielectric |
JP2001094107A (ja) | 1999-09-20 | 2001-04-06 | Hitachi Ltd | 有機半導体装置及び液晶表示装置 |
KR100477394B1 (ko) | 2000-11-01 | 2005-03-17 | 인터내셔널 비지네스 머신즈 코포레이션 | 저 동작 전압을 요하는 유기-무기 하이브리드 반도체를갖춘 박막 전계 효과 트랜지스터 |
JP4841751B2 (ja) * | 2001-06-01 | 2011-12-21 | 株式会社半導体エネルギー研究所 | 有機半導体装置及びその作製方法 |
JP4136482B2 (ja) * | 2002-06-20 | 2008-08-20 | キヤノン株式会社 | 有機半導体素子、その製造方法および有機半導体装置 |
JP2004165427A (ja) * | 2002-11-13 | 2004-06-10 | Konica Minolta Holdings Inc | 有機薄膜トランジスタ素子 |
KR20040054410A (ko) * | 2002-12-18 | 2004-06-25 | 엘지.필립스 엘시디 주식회사 | 유기 전계 발광 표시소자 및 그 제조방법 |
CN1282259C (zh) * | 2003-03-03 | 2006-10-25 | 中国科学院长春应用化学研究所 | 含有保护层的有机半导体场效应晶体管及制作方法 |
WO2006016669A1 (en) | 2004-08-13 | 2006-02-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
EP1684365A3 (en) * | 2005-01-20 | 2008-08-13 | Fuji Electric Holdings Co., Ltd. | Transistor |
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JP2006303459A (ja) | 2006-11-02 |
KR20110036900A (ko) | 2011-04-12 |
US8501530B2 (en) | 2013-08-06 |
KR101139716B1 (ko) | 2012-04-26 |
US7671448B2 (en) | 2010-03-02 |
US7875494B2 (en) | 2011-01-25 |
CN1855570A (zh) | 2006-11-01 |
US20100136740A1 (en) | 2010-06-03 |
KR20060103241A (ko) | 2006-09-28 |
CN1855570B (zh) | 2010-06-23 |
US20060214160A1 (en) | 2006-09-28 |
US20110111555A1 (en) | 2011-05-12 |
KR101240325B1 (ko) | 2013-03-07 |
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