JP2004266267A - 保護層を含む有機半導体電界効果トランジスタ及びその製造方法 - Google Patents
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- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 claims description 21
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- 229910021583 Cobalt(III) fluoride Inorganic materials 0.000 claims description 2
- 229910021594 Copper(II) fluoride Inorganic materials 0.000 claims description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 2
- WDEQGLDWZMIMJM-UHFFFAOYSA-N benzyl 4-hydroxy-2-(hydroxymethyl)pyrrolidine-1-carboxylate Chemical compound OCC1CC(O)CN1C(=O)OCC1=CC=CC=C1 WDEQGLDWZMIMJM-UHFFFAOYSA-N 0.000 claims description 2
- MPMSMUBQXQALQI-UHFFFAOYSA-N cobalt phthalocyanine Chemical compound [Co+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 MPMSMUBQXQALQI-UHFFFAOYSA-N 0.000 claims description 2
- YCYBZKSMUPTWEE-UHFFFAOYSA-L cobalt(ii) fluoride Chemical compound F[Co]F YCYBZKSMUPTWEE-UHFFFAOYSA-L 0.000 claims description 2
- GWFAVIIMQDUCRA-UHFFFAOYSA-L copper(ii) fluoride Chemical compound [F-].[F-].[Cu+2] GWFAVIIMQDUCRA-UHFFFAOYSA-L 0.000 claims description 2
- 229910003472 fullerene Inorganic materials 0.000 claims description 2
- SHXXPRJOPFJRHA-UHFFFAOYSA-K iron(iii) fluoride Chemical compound F[Fe](F)F SHXXPRJOPFJRHA-UHFFFAOYSA-K 0.000 claims description 2
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 claims description 2
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 claims description 2
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- XBDYBAVJXHJMNQ-UHFFFAOYSA-N Tetrahydroanthracene Natural products C1=CC=C2C=C(CCCC3)C3=CC2=C1 XBDYBAVJXHJMNQ-UHFFFAOYSA-N 0.000 description 1
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- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
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- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
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- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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Abstract
【解決手段】 本発明の電界効果トランジスタは、基板1と、基板1の上に形成されるゲート電極2とを備える保護層を含む有機電界効果トランジスタにおいて、ゲート絶縁層3が、基板1とゲート電極2との上に形成され、第1半導体層4が、ゲート絶縁層3の上に形成され、第2半導体層6が、第1半導体層4の上に形成され、保護層5が、第2半導体層6の上に形成され、ソース・ドレイン電極7が、保護層5のエッチング孔個所と第1半導体層4又は第2半導体層6との上に形成されることを特徴とする保護層を含む有機半導体型電界効果トランジスタである。
【選択図】 図1
Description
図面を参照して本発明を説明する。図1は本発明の保護層を含む有機電界効果トランジスタの構造を示している。
2 ゲート電極
3 ゲート絶縁層
4 第1半導体層
5 保護層
6 第2半導体層
7 ソース・ドレイン電極
Claims (8)
- 基板1と、基板1の上に形成されるゲート電極2とを備える保護層を含む有機半導体型電界効果トランジスタにおいて、ゲート絶縁層3が、基板1とゲート電極2との上に形成され、第1半導体層4は、前記ゲート絶縁層3の上に形成され、第2半導体層6が、前記第1半導体層4の上に形成され、保護層5が、前記第2半導体層6の上に形成され、ソース・ドレイン電極7は、前記第1半導体層4又は前記第2半導体層6と前記保護層5のエッチング孔個所に形成されている、ことを特徴とする保護層を含む有機半導体型電界効果トランジスタ。
- 前記有機半導体層が、少なくとも二種類の材料から構成される、請求項1に記載の保護層を含む有機半導体型電界効果トランジスタ。
- 前記第1半導体層又は前記第2半導体層が、単一の半導体材料からなる請求項2に記載の保護層を含む有機半導体型電界効果トランジスタ。
- 前記第1半導体層又は前記第2半導体層が、少なくとも二種類の有機分子から構成され、これらの分子を、混合し、共晶反応を起させ又は層状に複合することにより構成される半導体材料である、請求項2に記載の保護層を含む有機半導体型電界効果トランジスタ。
- 前記有機半導体能動層のキャリア移動度が10-3 cm2/Vs以上である、請求項2に記載の保護層を含む有機半導体型電界効果トランジスタ。
- 前記第1半導体層4及び前記第2半導体層6が、それぞれ銅フタロシアニン、ニッケルフタロシアニン、亜鉛フタロシアニン、コバルトフタロシアニン、白金フタロシアニン、遊離フタロシアニン、酸化チタンフタロシアニン、酸化バナジウムフタロシアニン、チオフェンオリゴマー、ポリチオフェン、ナフタセン、ペンタセン、ペリレン、PTCDA、フラーレン、フッ化銅フタロシアニン 、フッ化亜鉛フタロシアニン、フッ化第二鉄フタロシアニン、フッ化コバルトフタロシアニンからなる群から選択された一種又は二種以上の材料から構成されることを特徴とする請求項2に記載の保護層を含む有機半導体型電界効果トランジスタ。
- 前記保護層は、無機材料、有機材料、ポリマー材料又はそれらの複合材料であることを特徴とする請求項1に記載の保護層を含む有機半導体型電界効果トランジスタ。
- 基板上に導電材料からなるゲート電極を形成する工程と、基板とゲート電極の上に絶縁層を形成する工程と、絶縁層の上に第1半導体層を形成する工程と、第1半導体層の上に第2半導体層を形成する工程と、第2半導体層の上に保護層を形成する工程と、保護層のエッチング孔個所と半導体層4又は前記第2半導体層6との上にソース・ドレイン電極を形成する工程とを備えることを特徴する保護層を含む有機半導体型電界効果トランジスタの製造方法。
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CNB031050247A CN1282259C (zh) | 2003-03-03 | 2003-03-03 | 含有保护层的有机半导体场效应晶体管及制作方法 |
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KR (1) | KR20040078548A (ja) |
CN (1) | CN1282259C (ja) |
Cited By (8)
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JP2006303459A (ja) * | 2005-03-24 | 2006-11-02 | Semiconductor Energy Lab Co Ltd | 半導体装置、及びその製造方法 |
JP2006339538A (ja) * | 2005-06-03 | 2006-12-14 | National Institute Of Advanced Industrial & Technology | 有機半導体装置 |
JP2007103584A (ja) * | 2005-10-03 | 2007-04-19 | Ricoh Co Ltd | トランジスタ素子、表示装置およびこれらの製造方法 |
JP2007246424A (ja) * | 2006-03-15 | 2007-09-27 | National Institute Of Advanced Industrial & Technology | 有機材料の精製方法 |
US7575951B2 (en) | 2005-07-14 | 2009-08-18 | Samsung Electronics Co., Ltd. | Flat panel display and method for fabricating the same |
US8441033B2 (en) | 2007-01-09 | 2013-05-14 | Sony Corporation | Semiconductor device and method of manufacturing semiconductor device |
KR101756892B1 (ko) | 2010-12-27 | 2017-07-11 | 이.티.씨. 에스.알.엘. | 생물학적 및 의료적 적용을 위한 유기 전계 효과 트랜지스터를 포함하는 플랫폼 |
KR101911509B1 (ko) | 2011-06-27 | 2018-10-25 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
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DE602004005685T2 (de) * | 2003-03-07 | 2007-12-27 | Koninklijke Philips Electronics N.V. | Verfahren zur herstellung einer elektronischen anordnung |
CN100421279C (zh) * | 2003-11-17 | 2008-09-24 | 中国科学院长春应用化学研究所 | 含有修饰层的有机薄膜晶体管器件及其加工方法 |
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KR20070013132A (ko) | 2005-07-25 | 2007-01-30 | 삼성전자주식회사 | 박막트랜지스터 기판과 박막트랜지스터 기판의 제조방법 |
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CN105140261B (zh) | 2015-07-28 | 2018-09-11 | 京东方科技集团股份有限公司 | 有机薄膜晶体管及其制备方法、阵列基板及显示装置 |
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-
2003
- 2003-03-03 CN CNB031050247A patent/CN1282259C/zh not_active Expired - Lifetime
-
2004
- 2004-01-26 JP JP2004017237A patent/JP2004266267A/ja active Pending
- 2004-02-09 KR KR1020040008308A patent/KR20040078548A/ko not_active Application Discontinuation
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JP2006303459A (ja) * | 2005-03-24 | 2006-11-02 | Semiconductor Energy Lab Co Ltd | 半導体装置、及びその製造方法 |
KR101240325B1 (ko) | 2005-03-24 | 2013-03-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
US8501530B2 (en) | 2005-03-24 | 2013-08-06 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device with organic semiconductor layer |
JP2006339538A (ja) * | 2005-06-03 | 2006-12-14 | National Institute Of Advanced Industrial & Technology | 有機半導体装置 |
US7575951B2 (en) | 2005-07-14 | 2009-08-18 | Samsung Electronics Co., Ltd. | Flat panel display and method for fabricating the same |
JP2007103584A (ja) * | 2005-10-03 | 2007-04-19 | Ricoh Co Ltd | トランジスタ素子、表示装置およびこれらの製造方法 |
JP2007246424A (ja) * | 2006-03-15 | 2007-09-27 | National Institute Of Advanced Industrial & Technology | 有機材料の精製方法 |
US8441033B2 (en) | 2007-01-09 | 2013-05-14 | Sony Corporation | Semiconductor device and method of manufacturing semiconductor device |
US8518813B2 (en) | 2007-01-09 | 2013-08-27 | Sony Corporation | Semiconductor device and method of manufacturing semiconductor device |
KR101756892B1 (ko) | 2010-12-27 | 2017-07-11 | 이.티.씨. 에스.알.엘. | 생물학적 및 의료적 적용을 위한 유기 전계 효과 트랜지스터를 포함하는 플랫폼 |
KR101911509B1 (ko) | 2011-06-27 | 2018-10-25 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조 방법 |
Also Published As
Publication number | Publication date |
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CN1282259C (zh) | 2006-10-25 |
KR20040078548A (ko) | 2004-09-10 |
CN1437272A (zh) | 2003-08-20 |
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