ATE350765T1 - Verfahren zur herstellung einer halbleitervorrichtunng und eine halbleitervorrichtung - Google Patents

Verfahren zur herstellung einer halbleitervorrichtunng und eine halbleitervorrichtung

Info

Publication number
ATE350765T1
ATE350765T1 AT02077552T AT02077552T ATE350765T1 AT E350765 T1 ATE350765 T1 AT E350765T1 AT 02077552 T AT02077552 T AT 02077552T AT 02077552 T AT02077552 T AT 02077552T AT E350765 T1 ATE350765 T1 AT E350765T1
Authority
AT
Austria
Prior art keywords
semiconductor device
producing
semiconductor
package leads
semiconductor material
Prior art date
Application number
AT02077552T
Other languages
English (en)
Inventor
Ronald Dekker
Henricus Godefridus Rafae Maas
Martinus Pieter Joh Versleijen
Original Assignee
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv filed Critical Koninkl Philips Electronics Nv
Application granted granted Critical
Publication of ATE350765T1 publication Critical patent/ATE350765T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4822—Beam leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76289—Lateral isolation by air gap
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68359—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during manufacture of interconnect decals or build up layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68377—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support with parts of the auxiliary support remaining in the finished device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13075—Plural core members
    • H01L2224/1308—Plural core members being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01022—Titanium [Ti]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01061—Promethium [Pm]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1032—III-V
    • H01L2924/10329—Gallium arsenide [GaAs]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30105—Capacitance

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Die Bonding (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
  • Wire Bonding (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
AT02077552T 1994-07-26 1995-07-05 Verfahren zur herstellung einer halbleitervorrichtunng und eine halbleitervorrichtung ATE350765T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP94202182 1994-07-26

Publications (1)

Publication Number Publication Date
ATE350765T1 true ATE350765T1 (de) 2007-01-15

Family

ID=8217069

Family Applications (2)

Application Number Title Priority Date Filing Date
AT95921959T ATE225985T1 (de) 1994-07-26 1995-07-05 Herstellungsmethode eines oberflächen- montierbaren bauteils und dieser selbst
AT02077552T ATE350765T1 (de) 1994-07-26 1995-07-05 Verfahren zur herstellung einer halbleitervorrichtunng und eine halbleitervorrichtung

Family Applications Before (1)

Application Number Title Priority Date Filing Date
AT95921959T ATE225985T1 (de) 1994-07-26 1995-07-05 Herstellungsmethode eines oberflächen- montierbaren bauteils und dieser selbst

Country Status (7)

Country Link
US (1) US5753537A (de)
EP (2) EP0721661B1 (de)
KR (1) KR100380701B1 (de)
AT (2) ATE225985T1 (de)
DE (2) DE69535361T2 (de)
TW (1) TW345728B (de)
WO (1) WO1996003772A2 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69615792T2 (de) * 1995-05-10 2002-05-23 Koninklijke Philips Electronics N.V., Eindhoven Miniatur-halbleiteranordnung für oberflächenmontage
EP0860876A3 (de) * 1997-02-21 1999-09-22 DaimlerChrysler AG Anordnung und Verfahren zur Herstellung von CSP-Gehäusen für elektrische Bauteile
KR100390897B1 (ko) * 1997-12-29 2003-08-19 주식회사 하이닉스반도체 칩 크기 패키지의 제조방법
DE19818036B4 (de) * 1998-04-22 2005-05-19 Siemens Ag Verfahren zur Herstellung eines elektrotechnischen Bauteils mit einer kunststoffpassivierten Oberfläche, derartiges Bauteil und Anwendung dieses Bauteils
KR100294449B1 (ko) * 1998-07-15 2001-07-12 윤종용 본딩패드하부에형성되는커패시터를구비한반도체집적회로장치
US6429036B1 (en) * 1999-01-14 2002-08-06 Micron Technology, Inc. Backside illumination of CMOS image sensor
EP1116277A1 (de) * 1999-06-03 2001-07-18 Koninklijke Philips Electronics N.V. Anschlussanordnung für eine halbleiteranordnung und verfahren zur herstellung
JP2003504876A (ja) 1999-07-10 2003-02-04 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 半導体デバイス及びその製造方法
US6538328B1 (en) * 1999-11-10 2003-03-25 Em Microelectronic Metal film protection of the surface of a structure formed on a semiconductor substrate during etching of the substrate by a KOH etchant
JP2001185519A (ja) * 1999-12-24 2001-07-06 Hitachi Ltd 半導体装置及びその製造方法
JP2003529937A (ja) * 2000-03-30 2003-10-07 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 半導体装置及び半導体装置を製造する方法
US6642127B2 (en) * 2001-10-19 2003-11-04 Applied Materials, Inc. Method for dicing a semiconductor wafer
FR2871291B1 (fr) 2004-06-02 2006-12-08 Tracit Technologies Procede de transfert de plaques
US20100164079A1 (en) * 2005-06-29 2010-07-01 Koninklijke Philips Electronics, N.V. Method of manufacturing an assembly and assembly
WO2009117815A1 (en) * 2008-03-25 2009-10-01 Glen Sheldon Gerald Collard Apparatus for sanitizing oral appliances
TW201025522A (en) * 2008-12-18 2010-07-01 Memchip Technology Co Ltd MEMS packaging structure and manufacturing method thereof
KR102652261B1 (ko) * 2016-12-07 2024-03-27 엘지디스플레이 주식회사 유기발광소자를 이용한 조명장치

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1058296A (en) * 1963-06-28 1967-02-08 Rca Corp Composite insulator-semiconductor wafer and method of making same
US3475664A (en) * 1965-06-30 1969-10-28 Texas Instruments Inc Ambient atmosphere isolated semiconductor devices
US3493820A (en) * 1966-12-01 1970-02-03 Raytheon Co Airgap isolated semiconductor device
NL6703014A (de) * 1967-02-25 1968-08-26
US3521128A (en) * 1967-08-02 1970-07-21 Rca Corp Microminiature electrical component having integral indexing means
US3616348A (en) * 1968-06-10 1971-10-26 Rca Corp Process for isolating semiconductor elements
DE1927876C3 (de) * 1969-05-31 1979-09-27 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Halbleiteranordnung
US3623219A (en) * 1969-10-22 1971-11-30 Rca Corp Method for isolating semiconductor devices from a wafer of semiconducting material
US3823469A (en) * 1971-04-28 1974-07-16 Rca Corp High heat dissipation solder-reflow flip chip transistor
US4070230A (en) * 1974-07-04 1978-01-24 Siemens Aktiengesellschaft Semiconductor component with dielectric carrier and its manufacture
JPS5252582A (en) * 1975-10-25 1977-04-27 Toshiba Corp Device and production for semiconductor
GB1542084A (en) * 1976-08-31 1979-03-14 Standard Telephones Cables Ltd Thin silicon semiconductor devices
US4612408A (en) * 1984-10-22 1986-09-16 Sera Solar Corporation Electrically isolated semiconductor integrated photodiode circuits and method
US4601779A (en) * 1985-06-24 1986-07-22 International Business Machines Corporation Method of producing a thin silicon-on-insulator layer
US4892842A (en) * 1987-10-29 1990-01-09 Tektronix, Inc. Method of treating an integrated circuit
US4918505A (en) * 1988-07-19 1990-04-17 Tektronix, Inc. Method of treating an integrated circuit to provide a temperature sensor that is integral therewith
US5117279A (en) * 1990-03-23 1992-05-26 Motorola, Inc. Semiconductor device having a low temperature uv-cured epoxy seal
CA2038117A1 (en) * 1990-03-29 1991-09-30 Mahfuza B. Ali Controllable radiation curable photoiniferter prepared adhesives for attachment of microelectronic devices and a method of attaching microelectronic devices therewith
US5162251A (en) * 1991-03-18 1992-11-10 Hughes Danbury Optical Systems, Inc. Method for making thinned charge-coupled devices
US5144747A (en) * 1991-03-27 1992-09-08 Integrated System Assemblies Corporation Apparatus and method for positioning an integrated circuit chip within a multichip module
JPH05129320A (ja) * 1991-10-30 1993-05-25 Rohm Co Ltd 半導体装置及びその製造方法
US5403729A (en) * 1992-05-27 1995-04-04 Micro Technology Partners Fabricating a semiconductor with an insulative coating

Also Published As

Publication number Publication date
TW345728B (en) 1998-11-21
WO1996003772A3 (en) 1996-04-18
DE69528515T2 (de) 2003-04-24
EP0721661B1 (de) 2002-10-09
EP0721661A1 (de) 1996-07-17
US5753537A (en) 1998-05-19
DE69535361T2 (de) 2007-10-04
KR100380701B1 (ko) 2003-07-22
WO1996003772A2 (en) 1996-02-08
EP1251557A3 (de) 2003-04-09
DE69528515D1 (de) 2002-11-14
KR960705353A (ko) 1996-10-09
DE69535361D1 (de) 2007-02-15
EP1251557B1 (de) 2007-01-03
EP1251557A2 (de) 2002-10-23
ATE225985T1 (de) 2002-10-15

Similar Documents

Publication Publication Date Title
ATE350765T1 (de) Verfahren zur herstellung einer halbleitervorrichtunng und eine halbleitervorrichtung
DE69031257D1 (de) Integrierte Schaltung, die an der Oberfläche eines Halbleitersubstrats angeordnet ist, und Verfahren zur Herstellung derselben
DE68923129D1 (de) Verpackungselement für Halbleiterbauelement und Verfahren zur Herstellung des Verpackungselementes.
DE69229431D1 (de) Einrichtung und vorrichtung zur herstellung eines halbleiterbauelementes
DE69622277D1 (de) Halbleitermaterial, verfahren zur herstellung des halbleitermaterials und eine halbleitervorrichtung
DE69526895D1 (de) Verfahren zur Herstellung einer halbleitenden Anordnung und einer Halbleiterscheibe
DE3381215D1 (de) Integrierte halbleiterschaltungen und verfahren zur herstellung.
DE69417463D1 (de) Klebeträger für Wafer und Verfahren zur Herstellung von Halbleiterbauelementen mit diesem Träger
DE69429218D1 (de) Vorrichtung zur schnellen thermischen behandlung zur herstellung von halbleiterwafers
DE69414641D1 (de) Verfahren zur Herstellung einer harzversiegelten Halbleitervorrichtung, bei diesem Verfahren verwendeter Leiterrahmen zur Montage vieler Halbleiterelemente und harzversiegelte Halbleitervorrichtung
DE69527017D1 (de) Verfahren zur Herstellung einer Halbleiterpackung integral mit Halbleiterchip
MY117421A (en) Integral design features for heatsink attach for electronic packages
DE69432615D1 (de) Halbleiteranordnung mit einer gerichteten nichtmonocristallinen Siliziumdünnschicht und Verfahren zur Herstellung
DE69228787D1 (de) Verfahren und Anlage zur Herstellung von Halbleitervorrichtungen
FR2675311B1 (fr) Dispositif semi-conducteur du type bicmos pour circuits integres et son procede de fabrication.
DE69528107D1 (de) Verfahren zur Herstellung einer integrierten Halbleiterschaltung mit einem Feldeffekttransistor, einem Kondensator und einem Widerstand.
DE69334180D1 (de) Verfahren zur herstellung eines halbleiterbauelements mit mindestens einem chip und entsprechendes bauelement.
KR900012352A (ko) 반도체장치 패키지 및 그 패키지의 제조방법
DE68916182D1 (de) Halbleitereinrichtung, z.B. Feldeffekttransistor, und Verfahren zur Herstellung derselben.
DE69423568D1 (de) LC-Element, Halbleiteranordnung und Verfahren zur Herstellung des LC-Elements
DE68923686D1 (de) Halbleiterkarte und verfahren zur herstellung.
DE69232348D1 (de) Integrierte Halbleiterschaltungsanordnung und Verfahren zu ihrer Herstellung
EP2264745A3 (de) Apparat, der integrierte Schaltungen mit TFT-Bauelementen enthält, und Verfahren zu dessen Herstellung
GB2291426B (en) Epoxy resin composition process for producing the same and resin-sealed semiconductor device
DE68914927D1 (de) Halbleiteranordnung vom mit Plastik umhüllten Typ und Verfahren zur Herstellung derselben.

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties