DE69423568D1 - LC-Element, Halbleiteranordnung und Verfahren zur Herstellung des LC-Elements - Google Patents

LC-Element, Halbleiteranordnung und Verfahren zur Herstellung des LC-Elements

Info

Publication number
DE69423568D1
DE69423568D1 DE69423568T DE69423568T DE69423568D1 DE 69423568 D1 DE69423568 D1 DE 69423568D1 DE 69423568 T DE69423568 T DE 69423568T DE 69423568 T DE69423568 T DE 69423568T DE 69423568 D1 DE69423568 D1 DE 69423568D1
Authority
DE
Germany
Prior art keywords
producing
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69423568T
Other languages
English (en)
Other versions
DE69423568T2 (de
Inventor
Takeshi Ikeda
Susumu Okamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NSC Co Ltd
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP29611693A external-priority patent/JP3373267B2/ja
Priority claimed from JP31730793A external-priority patent/JPH07147383A/ja
Priority claimed from JP34642993A external-priority patent/JP3290276B2/ja
Application filed by Individual filed Critical Individual
Publication of DE69423568D1 publication Critical patent/DE69423568D1/de
Application granted granted Critical
Publication of DE69423568T2 publication Critical patent/DE69423568T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/0115—Frequency selective two-port networks comprising only inductors and capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
    • H03H2001/0021—Constructional details
    • H03H2001/0064—Constructional details comprising semiconductor material
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
    • H03H2001/0021—Constructional details
    • H03H2001/0078—Constructional details comprising spiral inductor on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Filters And Equalizers (AREA)
  • Coils Or Transformers For Communication (AREA)
DE69423568T 1993-11-01 1994-10-31 LC-Element, Halbleiteranordnung und Verfahren zur Herstellung des LC-Elements Expired - Fee Related DE69423568T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP29611693A JP3373267B2 (ja) 1993-11-01 1993-11-01 Ｌｃ素子及び半導体装置
JP31730793A JPH07147383A (ja) 1993-11-24 1993-11-24 Ｌｃ素子，半導体装置及びｌｃ素子の製造方法
JP34642993A JP3290276B2 (ja) 1993-12-22 1993-12-22 Ｌｃ素子，半導体装置及びｌｃ素子の製造方法

Publications (2)

Publication Number Publication Date
DE69423568D1 true DE69423568D1 (de) 2000-04-27
DE69423568T2 DE69423568T2 (de) 2000-11-16

Family

ID=27338032

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69423568T Expired - Fee Related DE69423568T2 (de) 1993-11-01 1994-10-31 LC-Element, Halbleiteranordnung und Verfahren zur Herstellung des LC-Elements

Country Status (7)

Country Link
US (1) US5557138A (de)
EP (1) EP0653837B1 (de)
KR (1) KR100320001B1 (de)
CN (1) CN1084549C (de)
DE (1) DE69423568T2 (de)
FI (1) FI113910B (de)
TW (1) TW275152B (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW267260B (de) * 1993-12-29 1996-01-01 Tif Kk
US5936299A (en) * 1997-03-13 1999-08-10 International Business Machines Corporation Substrate contact for integrated spiral inductors
US6005281A (en) * 1997-05-07 1999-12-21 Advanced Micro Devices, Inc. Apparatus for the non-contact manipulation of a semiconductor die
JP4080582B2 (ja) * 1997-12-22 2008-04-23 株式会社東芝 半導体集積回路装置
US5952893A (en) * 1998-03-06 1999-09-14 International Business Machines Corporation Integrated circuit inductors for use with electronic oscillators
US6885275B1 (en) * 1998-11-12 2005-04-26 Broadcom Corporation Multi-track integrated spiral inductor
GB2353139B (en) * 1999-08-12 2001-08-29 United Microelectronics Corp Inductor and method of manufacturing the same
JP4256575B2 (ja) * 2000-08-15 2009-04-22 パナソニック株式会社 バイアホールを備えた高周波受動回路および高周波増幅器
US7037820B2 (en) * 2004-01-30 2006-05-02 Agere Systems Inc. Cross-fill pattern for metal fill levels, power supply filtering, and analog circuit shielding
US7425485B2 (en) * 2005-09-30 2008-09-16 Freescale Semiconductor, Inc. Method for forming microelectronic assembly
US7724484B2 (en) * 2006-12-29 2010-05-25 Cobham Defense Electronic Systems Corporation Ultra broadband 10-W CW integrated limiter
GB2487019B (en) 2007-05-08 2012-08-15 Scanimetrics Inc Ultra high speed signal transmission/reception
CN101707478B (zh) * 2009-11-24 2012-05-16 南京航空航天大学 一种滤波电容器寄生电感的消除装置
US9793039B1 (en) * 2011-05-04 2017-10-17 The Board Of Trustees Of The University Of Alabama Carbon nanotube-based integrated power inductor for on-chip switching power converters
US9590514B1 (en) 2013-03-15 2017-03-07 The Board Of Trustees Of The University Of Alabama, For And On Behalf Of The University Of Alabama Carbon nanotube-based integrated power converters
CN103825074B (zh) * 2014-01-24 2015-12-23 浙江纺织服装职业技术学院 一种频率和带宽可调的射频滤波器

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3022472A (en) * 1958-01-22 1962-02-20 Bell Telephone Labor Inc Variable equalizer employing semiconductive element
US3778643A (en) * 1972-05-18 1973-12-11 Gen Motors Corp A solid state variable delay line using reversed biased pn junctions
JPS629661A (ja) * 1985-07-05 1987-01-17 Nec Corp モノリシック集積回路装置
JPS62244160A (ja) * 1986-04-17 1987-10-24 Mitsubishi Electric Corp 半導体装置
JPS6348855A (ja) * 1986-08-19 1988-03-01 Mitsubishi Electric Corp モノリシツク化マイクロ波集積回路
JPS63140560A (ja) * 1986-12-02 1988-06-13 Mitsubishi Electric Corp 半導体モノリシツクバイアス給電回路
JPS63276264A (ja) * 1987-05-08 1988-11-14 Mitsubishi Electric Corp モノリシツク化マイクロ波集積回路
JPH01223758A (ja) * 1988-03-02 1989-09-06 Mitsubishi Electric Corp モノリシックマイクロ波集積回路
US5111169A (en) * 1989-03-23 1992-05-05 Takeshi Ikeda Lc noise filter
JPH0377360A (ja) * 1989-08-18 1991-04-02 Mitsubishi Electric Corp 半導体装置
JP3280019B2 (ja) * 1989-10-26 2002-04-30 新潟精密株式会社 Ｌｃノイズフィルタ
US5326986A (en) * 1991-03-05 1994-07-05 University Of Houston - University Park Parallel N-junction superconducting interferometer with enhanced flux-to-voltage transfer function
US5258626A (en) * 1992-06-22 1993-11-02 The United States Of America As Represented By The Secretary Of The Air Force Superconducting optically reconfigurable electrical device

Also Published As

Publication number Publication date
CN1084549C (zh) 2002-05-08
TW275152B (de) 1996-05-01
FI113910B (fi) 2004-06-30
FI945061A (fi) 1995-05-02
KR950015834A (ko) 1995-06-17
CN1106592A (zh) 1995-08-09
US5557138A (en) 1996-09-17
DE69423568T2 (de) 2000-11-16
FI945061A0 (fi) 1994-10-27
EP0653837A1 (de) 1995-05-17
KR100320001B1 (ko) 2002-04-22
EP0653837B1 (de) 2000-03-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: KRAMER - BARSKE - SCHMIDTCHEN, 81245 MUENCHEN

8327 Change in the person/name/address of the patent owner

Owner name: NIIGATA SEIMITSU CO., LTD., JOUETSU, NIIGATA, JP

8381 Inventor (new situation)

Inventor name: IKEDA, TAKESHI, TOKIO/TOKYO, JP

Inventor name: OKAMURA, SUSUMU, TOKIO/TOKYO, JP

8327 Change in the person/name/address of the patent owner

Owner name: NIIGATA SEIMITSU CO., LTD., JOETSU, NIIGATA, JP

8339 Ceased/non-payment of the annual fee