DE69417199D1 - LC-Element, Halbleiteranordnung, und Verfahren zur Herstellung des LC-Elements - Google Patents

LC-Element, Halbleiteranordnung, und Verfahren zur Herstellung des LC-Elements

Info

Publication number
DE69417199D1
DE69417199D1 DE69417199T DE69417199T DE69417199D1 DE 69417199 D1 DE69417199 D1 DE 69417199D1 DE 69417199 T DE69417199 T DE 69417199T DE 69417199 T DE69417199 T DE 69417199T DE 69417199 D1 DE69417199 D1 DE 69417199D1
Authority
DE
Germany
Prior art keywords
producing
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69417199T
Other languages
English (en)
Other versions
DE69417199T2 (de
Inventor
Takeshi Ikeda
Akira Okamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NSC Co Ltd
Original Assignee
TIF Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP35182393A external-priority patent/JP3461886B2/ja
Priority claimed from JP25753794A external-priority patent/JPH0897373A/ja
Application filed by TIF Co Ltd filed Critical TIF Co Ltd
Publication of DE69417199D1 publication Critical patent/DE69417199D1/de
Application granted granted Critical
Publication of DE69417199T2 publication Critical patent/DE69417199T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/01—Frequency selective two-port networks
    • H03H7/0115—Frequency selective two-port networks comprising only inductors and capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
    • H03H2001/0021—Constructional details
    • H03H2001/0064—Constructional details comprising semiconductor material
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H1/00—Constructional details of impedance networks whose electrical mode of operation is not specified or applicable to more than one type of network
    • H03H2001/0021—Constructional details
    • H03H2001/0078—Constructional details comprising spiral inductor on a substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Coils Or Transformers For Communication (AREA)
DE69417199T 1993-12-29 1994-12-21 LC-Element, Halbleiteranordnung, und Verfahren zur Herstellung des LC-Elements Expired - Fee Related DE69417199T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP35182393A JP3461886B2 (ja) 1993-12-29 1993-12-29 Ｌｃ素子，半導体装置及びｌｃ素子の製造方法
JP25753794A JPH0897373A (ja) 1994-09-27 1994-09-27 Ｌｃ素子，半導体装置及びｌｃ素子の製造方法

Publications (2)

Publication Number Publication Date
DE69417199D1 true DE69417199D1 (de) 1999-04-22
DE69417199T2 DE69417199T2 (de) 1999-11-25

Family

ID=26543252

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69417199T Expired - Fee Related DE69417199T2 (de) 1993-12-29 1994-12-21 LC-Element, Halbleiteranordnung, und Verfahren zur Herstellung des LC-Elements

Country Status (6)

Country Link
US (1) US5705963A (de)
EP (1) EP0661805B1 (de)
KR (1) KR100315267B1 (de)
DE (1) DE69417199T2 (de)
FI (1) FI116008B (de)
TW (1) TW267260B (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6008713A (en) * 1996-02-29 1999-12-28 Texas Instruments Incorporated Monolithic inductor
JP3942264B2 (ja) 1998-03-11 2007-07-11 富士通株式会社 半導体基板上に形成されるインダクタンス素子
JPH11317621A (ja) 1998-05-07 1999-11-16 Tif:Kk Ｌｃ発振器
US6310393B1 (en) * 1998-10-09 2001-10-30 Matsushita Electric Industrial Co., Ltd. Electric circuit and package for semiconductor
FR2792775B1 (fr) * 1999-04-20 2001-11-23 France Telecom Dispositif de circuit integre comprenant une inductance a haut coefficient de qualite
EP1211799B1 (de) * 1999-05-18 2004-08-25 Niigata Seimitsu Co., Ltd. Oszillator
US6133079A (en) * 1999-07-22 2000-10-17 Chartered Semiconductor Manufacturing Ltd. Method for reducing substrate capacitive coupling of a thin film inductor by reverse P/N junctions
JP2001044754A (ja) * 1999-07-26 2001-02-16 Niigata Seimitsu Kk Ｌｃ発振器
GB2353139B (en) * 1999-08-12 2001-08-29 United Microelectronics Corp Inductor and method of manufacturing the same
GB2361123A (en) 2000-04-04 2001-10-10 Nokia Mobile Phones Ltd Polyphase filters in silicon integrated circuit technology
US6917095B1 (en) 2000-05-30 2005-07-12 Altera Corporation Integrated radio frequency circuits
EP1160842A3 (de) * 2000-05-30 2003-09-17 Programmable Silicon Solutions Integrierte Radiofrequenz-Schaltkreise
US6441442B1 (en) * 2000-05-30 2002-08-27 Programmable Silicon Solutions Integrated inductive circuits
JP4256575B2 (ja) * 2000-08-15 2009-04-22 パナソニック株式会社 バイアホールを備えた高周波受動回路および高周波増幅器
FR2851078A1 (fr) * 2003-02-07 2004-08-13 St Microelectronics Sa Inductance integree et circuit electronique l'incorporant
US7288417B2 (en) * 2005-01-06 2007-10-30 International Business Machines Corporation On-chip signal transformer for ground noise isolation
US8129817B2 (en) * 2008-12-31 2012-03-06 Taiwan Semiconductor Manufacturing Co., Ltd. Reducing high-frequency signal loss in substrates
US8546907B2 (en) * 2009-04-15 2013-10-01 Taiwan Semiconductor Manufacturing Company, Ltd. Enhanced transmission lines for radio frequency applications
US9698214B1 (en) * 2016-03-31 2017-07-04 Taiwan Semiconductor Manufacturing Co., Ltd. Capacitor structure of integrated circuit chip and method of fabricating the same

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3022472A (en) * 1958-01-22 1962-02-20 Bell Telephone Labor Inc Variable equalizer employing semiconductive element
US3258723A (en) * 1962-01-30 1966-06-28 Osafune ia
US3328600A (en) * 1964-02-06 1967-06-27 Halliburton Co Solid-state relay for mark-space system employing oscillator intercoupling input andoutput filters providing signal isolation and interference-free output
US3778643A (en) * 1972-05-18 1973-12-11 Gen Motors Corp A solid state variable delay line using reversed biased pn junctions
JPS60225449A (ja) * 1984-04-24 1985-11-09 Sumitomo Electric Ind Ltd 半導体集積回路パツケ−ジ
FR2567325B1 (fr) * 1984-07-03 1986-11-14 Thomson Csf Element a capacite variable, commandable par une tension continue
US5023578A (en) * 1987-08-11 1991-06-11 Murata Manufacturing Co., Ltd. Filter array having a plurality of capacitance elements
JP3280019B2 (ja) * 1989-10-26 2002-04-30 新潟精密株式会社 Ｌｃノイズフィルタ
US5420553A (en) * 1991-01-16 1995-05-30 Murata Manufacturing Co., Ltd. Noise filter
US5283462A (en) * 1991-11-04 1994-02-01 Motorola, Inc. Integrated distributed inductive-capacitive network
TW275152B (de) * 1993-11-01 1996-05-01 Ikeda Takeshi
US5497028A (en) * 1993-11-10 1996-03-05 Ikeda; Takeshi LC element and semiconductor device having a signal transmission line and LC element manufacturing method

Also Published As

Publication number Publication date
EP0661805A1 (de) 1995-07-05
FI946026A (fi) 1995-06-30
FI116008B (fi) 2005-08-31
KR950021507A (ko) 1995-07-26
KR100315267B1 (ko) 2002-04-24
EP0661805B1 (de) 1999-03-17
FI946026A0 (fi) 1994-12-22
US5705963A (en) 1998-01-06
TW267260B (de) 1996-01-01
DE69417199T2 (de) 1999-11-25

Similar Documents

Publication Publication Date Title
DE69622277D1 (de) Halbleitermaterial, verfahren zur herstellung des halbleitermaterials und eine halbleitervorrichtung
DE69511761D1 (de) Eingekapseltes Regal, sowie Vorrichtung und Verfahren zur Herstellung desselben
DE69417199D1 (de) LC-Element, Halbleiteranordnung, und Verfahren zur Herstellung des LC-Elements
DE69516424D1 (de) Lamellenschleifscheibe, verfahren und vorrichtung zur herstellung derselben
DE69527054D1 (de) Retroreflektierender gegenstand und verfahren zur herstellung
DE69402051D1 (de) Wärmetauschelement, verfahren und vorrichtung zu dessen herstellung
DE69941879D1 (de) Feldeffekt-halbleiterbauelement und verfahren zu dessen herstellung
DE69626833D1 (de) Ernährungsergänzungsgetränk und verfahren zur herstellung desselben
DE69530954D1 (de) Mikromechanisches Bauelement und Verfahren zur Herstellung desselben
DE69732217D1 (de) Formverfahren und vorrichtung und dadurch hergestellter gegenstand
DE69423568D1 (de) LC-Element, Halbleiteranordnung und Verfahren zur Herstellung des LC-Elements
EP0663710A3 (de) Optische Halbleitervorrichtung und Herstellungsverfahren.
DE69738152D1 (de) Photovoltaisches Bauelement und Verfahren zur Herstellung desselben
DE69419005D1 (de) Verfahren zur herstellung von 1,1,1,4,4,4-hexafluoro-2-butenen und 1,1,4,4,4,4-hexafluorobutan
DE69412560D1 (de) Feuchtigkeitdurchlässiges wasserundurchlässiges gewebe und verfahren zur herstellung desselben
DE69839723D1 (de) Verfahren und Vorrichtung zur Herstellung von Halbleiterkristallen
DE59406023D1 (de) Vorrichtung zur Verriegelung
DE69610109D1 (de) Halbleiterkomponente mit verbesserter sicherheit;halbleiterschaltkreisanordung und verfahren zur herstellung derselben
DE68916182D1 (de) Halbleitereinrichtung, z.B. Feldeffekttransistor, und Verfahren zur Herstellung derselben.
DE68923686D1 (de) Halbleiterkarte und verfahren zur herstellung.
DE69515697D1 (de) Blockcopolymere und verfahren zur herstellung
DE59606751D1 (de) Mikroelektronischer, integrierter Sensor und Verfahren zur Herstellung des Sensors
DE69229314D1 (de) Halbleiteranordnung und Verfahren zur Herstellung
DE69702415D1 (de) Haftetikett, Verfahren und Vorrichtung zur Herstellung desselben
DE69528683D1 (de) Halbleiterbauteil und Verfahren zur Herstellung desselben

Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: NIIGATA SEIMITSU CO., LTD., JOUETSU, NIIGATA, JP

8328 Change in the person/name/address of the agent

Representative=s name: KRAMER - BARSKE - SCHMIDTCHEN, 81245 MUENCHEN

8339 Ceased/non-payment of the annual fee