DE69432615D1 - Halbleiteranordnung mit einer gerichteten nichtmonocristallinen Siliziumdünnschicht und Verfahren zur Herstellung - Google Patents

Halbleiteranordnung mit einer gerichteten nichtmonocristallinen Siliziumdünnschicht und Verfahren zur Herstellung

Info

Publication number
DE69432615D1
DE69432615D1 DE69432615T DE69432615T DE69432615D1 DE 69432615 D1 DE69432615 D1 DE 69432615D1 DE 69432615 T DE69432615 T DE 69432615T DE 69432615 T DE69432615 T DE 69432615T DE 69432615 D1 DE69432615 D1 DE 69432615D1
Authority
DE
Germany
Prior art keywords
production
thin film
semiconductor device
monocrystalline silicon
silicon thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69432615T
Other languages
English (en)
Other versions
DE69432615T2 (de
Inventor
Hongyong Zhang
Toru Takayama
Yasuhiko Takemura
Akiharu Miyanaga
Hisashi Ohtani
Junichi Takeyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of DE69432615D1 publication Critical patent/DE69432615D1/de
Application granted granted Critical
Publication of DE69432615T2 publication Critical patent/DE69432615T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02672—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation enhancing elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02609—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H01L21/02686—Pulsed laser beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78672—Polycrystalline or microcrystalline silicon transistor
    • H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Ceramic Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
DE69432615T 1993-06-25 1994-06-27 Halbleiteranordnung mit einer gerichteten nichtmonocristallinen Siliziumdünnschicht und Verfahren zur Herstellung Expired - Lifetime DE69432615T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP18075293 1993-06-25
JP18075293 1993-06-25
JP3661694 1994-02-08
JP3661694 1994-02-08

Publications (2)

Publication Number Publication Date
DE69432615D1 true DE69432615D1 (de) 2003-06-12
DE69432615T2 DE69432615T2 (de) 2004-02-19

Family

ID=26375695

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69435114T Expired - Lifetime DE69435114D1 (de) 1993-06-25 1994-06-27 Verfahren zur Herstellung eines Halbleiterbauelements
DE69432615T Expired - Lifetime DE69432615T2 (de) 1993-06-25 1994-06-27 Halbleiteranordnung mit einer gerichteten nichtmonocristallinen Siliziumdünnschicht und Verfahren zur Herstellung

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69435114T Expired - Lifetime DE69435114D1 (de) 1993-06-25 1994-06-27 Verfahren zur Herstellung eines Halbleiterbauelements

Country Status (6)

Country Link
US (1) US5882960A (de)
EP (3) EP1026751A3 (de)
KR (2) KR100299721B1 (de)
CN (4) CN1161831C (de)
DE (2) DE69435114D1 (de)
TW (1) TW295703B (de)

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Also Published As

Publication number Publication date
KR950002076A (ko) 1995-01-04
US5882960A (en) 1999-03-16
EP0631325B1 (de) 2003-05-07
KR100306834B1 (ko) 2004-02-11
CN1155991C (zh) 2004-06-30
CN1222752A (zh) 1999-07-14
CN1267902A (zh) 2000-09-27
EP1026751A2 (de) 2000-08-09
EP1026752A2 (de) 2000-08-09
DE69435114D1 (de) 2008-08-21
EP1026752A3 (de) 2002-11-20
EP1026752B1 (de) 2008-07-09
CN1100562A (zh) 1995-03-22
CN1161831C (zh) 2004-08-11
TW295703B (de) 1997-01-11
EP0631325A3 (de) 1996-12-18
EP1026751A3 (de) 2002-11-20
CN1208807C (zh) 2005-06-29
DE69432615T2 (de) 2004-02-19
KR100299721B1 (ko) 2001-12-15
CN1267907A (zh) 2000-09-27
KR19990055848A (ko) 1999-07-15
EP0631325A2 (de) 1994-12-28
CN1055786C (zh) 2000-08-23

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