JP4022470B2 - 薄膜トランジスタ構造の製造方法、およびディスプレイ・デバイス - Google Patents
薄膜トランジスタ構造の製造方法、およびディスプレイ・デバイス Download PDFInfo
- Publication number
- JP4022470B2 JP4022470B2 JP2002566560A JP2002566560A JP4022470B2 JP 4022470 B2 JP4022470 B2 JP 4022470B2 JP 2002566560 A JP2002566560 A JP 2002566560A JP 2002566560 A JP2002566560 A JP 2002566560A JP 4022470 B2 JP4022470 B2 JP 4022470B2
- Authority
- JP
- Japan
- Prior art keywords
- forming
- insulating
- thin film
- trench
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 91
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 229920006254 polymer film Polymers 0.000 claims abstract description 77
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 238000000034 method Methods 0.000 claims description 76
- 239000010408 film Substances 0.000 claims description 44
- 229920000642 polymer Polymers 0.000 claims description 25
- 229920005989 resin Polymers 0.000 claims description 22
- 239000011347 resin Substances 0.000 claims description 22
- 239000003054 catalyst Substances 0.000 claims description 20
- 238000007772 electroless plating Methods 0.000 claims description 20
- 238000009713 electroplating Methods 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 230000008569 process Effects 0.000 claims description 17
- 239000010949 copper Substances 0.000 claims description 15
- 229920002120 photoresistant polymer Polymers 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 12
- 238000002161 passivation Methods 0.000 claims description 11
- 239000011810 insulating material Substances 0.000 claims description 7
- 238000000059 patterning Methods 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 229920001187 thermosetting polymer Polymers 0.000 claims description 6
- 239000007864 aqueous solution Substances 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 238000007650 screen-printing Methods 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 claims description 3
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 claims description 3
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 claims description 3
- 239000006087 Silane Coupling Agent Substances 0.000 claims description 2
- 229910000365 copper sulfate Inorganic materials 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims description 2
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 claims description 2
- 238000005498 polishing Methods 0.000 claims description 2
- 239000000243 solution Substances 0.000 claims description 2
- 238000011049 filling Methods 0.000 claims 2
- 238000001556 precipitation Methods 0.000 claims 1
- 238000007788 roughening Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 81
- 238000010586 diagram Methods 0.000 description 19
- 239000000463 material Substances 0.000 description 19
- 229920001296 polysiloxane Polymers 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 239000011342 resin composition Substances 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000002861 polymer material Substances 0.000 description 6
- 239000005871 repellent Substances 0.000 description 6
- 229910020286 SiOxNy Inorganic materials 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 238000011282 treatment Methods 0.000 description 5
- 229910004304 SiNy Inorganic materials 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000002940 repellent Effects 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 229920000178 Acrylic resin Polymers 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 3
- 241001239379 Calophysus macropterus Species 0.000 description 3
- 229910016024 MoTa Inorganic materials 0.000 description 3
- 230000002411 adverse Effects 0.000 description 3
- 239000000084 colloidal system Substances 0.000 description 3
- 229920001577 copolymer Polymers 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000004381 surface treatment Methods 0.000 description 3
- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229920001169 thermoplastic Polymers 0.000 description 2
- 229920005992 thermoplastic resin Polymers 0.000 description 2
- 239000004416 thermosoftening plastic Substances 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000010538 cationic polymerization reaction Methods 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910000366 copper(II) sulfate Inorganic materials 0.000 description 1
- 239000007822 coupling agent Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 150000008049 diazo compounds Chemical class 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920006122 polyamide resin Polymers 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 239000003505 polymerization initiator Substances 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- HXHCOXPZCUFAJI-UHFFFAOYSA-N prop-2-enoic acid;styrene Chemical compound OC(=O)C=C.C=CC1=CC=CC=C1 HXHCOXPZCUFAJI-UHFFFAOYSA-N 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001042081 | 2001-02-19 | ||
JP2001042081 | 2001-02-19 | ||
PCT/JP2001/011110 WO2002067335A1 (fr) | 2001-02-19 | 2001-12-18 | Structure de transistor en couches minces, procede de fabrication d'une structure de transistor en couches minces, et dispositif d'affichage utilisant une structure de transistor en couches minces |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2002067335A1 JPWO2002067335A1 (ja) | 2004-06-24 |
JP4022470B2 true JP4022470B2 (ja) | 2007-12-19 |
Family
ID=18904430
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002566560A Expired - Fee Related JP4022470B2 (ja) | 2001-02-19 | 2001-12-18 | 薄膜トランジスタ構造の製造方法、およびディスプレイ・デバイス |
Country Status (9)
Country | Link |
---|---|
US (2) | US6952036B2 (de) |
EP (1) | EP1369928B1 (de) |
JP (1) | JP4022470B2 (de) |
KR (1) | KR100650417B1 (de) |
CN (1) | CN100459163C (de) |
AT (1) | ATE456863T1 (de) |
DE (1) | DE60141225D1 (de) |
TW (1) | TW541705B (de) |
WO (1) | WO2002067335A1 (de) |
Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1369928B1 (de) | 2001-02-19 | 2010-01-27 | International Business Machines Corporation | Verfahren zur herstellung einer dünnfilmtransistorstruktur |
US6887776B2 (en) * | 2003-04-11 | 2005-05-03 | Applied Materials, Inc. | Methods to form metal lines using selective electrochemical deposition |
TWI253174B (en) * | 2003-05-09 | 2006-04-11 | Au Optronics Corp | Ion sensitive field effect transistor and fabrication method of the same |
ATE414995T1 (de) | 2003-05-12 | 2008-12-15 | Cambridge Entpr Ltd | Polymerer transistor |
CN1799292B (zh) * | 2003-06-04 | 2012-02-08 | 日本瑞翁株式会社 | 基板制造方法 |
US7868957B2 (en) | 2003-12-02 | 2011-01-11 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor, display device and liquid crystal display device and method for manufacturing the same |
JP4554344B2 (ja) * | 2003-12-02 | 2010-09-29 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
KR101124999B1 (ko) * | 2003-12-02 | 2012-03-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치와 그 제조 방법 |
JP4712361B2 (ja) * | 2003-12-02 | 2011-06-29 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタの作製方法 |
US7223641B2 (en) * | 2004-03-26 | 2007-05-29 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, method for manufacturing the same, liquid crystal television and EL television |
KR100636503B1 (ko) * | 2004-06-25 | 2006-10-18 | 삼성에스디아이 주식회사 | 발광 표시장치와 그의 제조방법 |
JP2006030502A (ja) * | 2004-07-15 | 2006-02-02 | Sony Corp | 表示装置および表示装置の製造方法 |
JP4628040B2 (ja) * | 2004-08-20 | 2011-02-09 | 株式会社半導体エネルギー研究所 | 半導体素子を備えた表示装置の製造方法 |
CN100452325C (zh) * | 2005-03-22 | 2009-01-14 | 友达光电股份有限公司 | 一种薄膜晶体管与液晶显示器的制造方法 |
JPWO2006134899A1 (ja) * | 2005-06-13 | 2009-01-08 | 国立大学法人東北大学 | 薄膜トランジスタ、配線板、及び電子装置の製造方法 |
WO2007004666A1 (ja) * | 2005-07-05 | 2007-01-11 | Tohoku University | 薄膜トランジスタ、配線板、及びそれらの製造方法 |
US7397086B2 (en) * | 2005-12-23 | 2008-07-08 | Xerox Corporation | Top-gate thin-film transistor |
JP2007203442A (ja) * | 2006-02-06 | 2007-08-16 | Univ Kanagawa | 金属被覆砥粒,金属被覆砥粒の製造方法,およびその金属被覆砥粒を使用した砥石 |
EP2034520B1 (de) * | 2006-06-08 | 2013-04-03 | International Business Machines Corporation | Hochwärmeleitfähiges flexibles blatt |
TWI305682B (en) * | 2006-08-14 | 2009-01-21 | Au Optronics Corp | Bottom substrate for liquid crystal display device and the method of making the same |
JP2008103653A (ja) * | 2006-09-22 | 2008-05-01 | Tohoku Univ | 半導体装置及び半導体装置の製造方法 |
KR101272489B1 (ko) * | 2006-10-03 | 2013-06-07 | 삼성디스플레이 주식회사 | 표시 기판, 이의 제조 방법 및 이를 구비하는 전기영동표시장치 |
JP5329038B2 (ja) * | 2006-12-21 | 2013-10-30 | 宇部日東化成株式会社 | 半導体装置及び半導体装置の製造方法 |
KR101418588B1 (ko) * | 2007-11-14 | 2014-07-16 | 삼성디스플레이 주식회사 | 표시 기판 및 이의 제조 방법 |
GB2454740B (en) * | 2007-11-19 | 2011-12-21 | Hewlett Packard Development Co | Conductive interconnects |
EP2151876A1 (de) * | 2008-08-05 | 2010-02-10 | Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO | Elektrische Transportkomponente, Herstellungsverfahren dafür sowie elektro-optische Vorrichtung und opto-elektrische Vorrichtung |
JP2010040897A (ja) * | 2008-08-07 | 2010-02-18 | Sony Corp | 有機薄膜トランジスタ、有機薄膜トランジスタの製造方法、および電子機器 |
JP5533050B2 (ja) * | 2009-04-23 | 2014-06-25 | セイコーエプソン株式会社 | 半導体装置の製造方法、半導体装置、アクティブマトリクス装置、電気光学装置および電子機器 |
US9099437B2 (en) * | 2011-03-08 | 2015-08-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP5891952B2 (ja) * | 2012-05-29 | 2016-03-23 | 株式会社ジャパンディスプレイ | 表示装置の製造方法 |
KR20140061030A (ko) | 2012-11-13 | 2014-05-21 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판 및 그 제조 방법 |
KR20140064550A (ko) * | 2012-11-20 | 2014-05-28 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판의 제조 방법 |
WO2015076358A1 (ja) * | 2013-11-21 | 2015-05-28 | 株式会社ニコン | 配線パターンの製造方法およびトランジスタの製造方法 |
TW201525064A (zh) * | 2013-12-16 | 2015-07-01 | Daxin Materials Corp | 感光樹脂組成物、感光樹脂及有機發光二極體顯示元件 |
CN104795400B (zh) * | 2015-02-12 | 2018-10-30 | 合肥鑫晟光电科技有限公司 | 阵列基板制造方法、阵列基板和显示装置 |
CN106128963B (zh) * | 2016-09-23 | 2019-07-23 | 京东方科技集团股份有限公司 | 薄膜晶体管及制备方法、阵列基板及制备方法、显示面板 |
CN106876260B (zh) | 2017-03-03 | 2020-03-27 | 惠科股份有限公司 | 一种闸电极结构及其制造方法和显示装置 |
CN107665896B (zh) * | 2017-10-27 | 2021-02-23 | 北京京东方显示技术有限公司 | 显示基板及其制作方法、显示面板和显示装置 |
US11114475B2 (en) * | 2017-11-22 | 2021-09-07 | Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | IPS thin-film transistor array substrate and manufacturing method thereof |
CN109873037A (zh) * | 2019-03-20 | 2019-06-11 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制备方法、显示装置 |
CN113540127B (zh) * | 2021-07-19 | 2023-09-19 | 合肥鑫晟光电科技有限公司 | 一种背板、显示面板、显示装置及其制备方法 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6418758U (de) * | 1987-07-25 | 1989-01-30 | ||
EP0598410B1 (de) * | 1989-02-14 | 2001-05-23 | Seiko Epson Corporation | Verfahren zum Herstellen einer Halbleitervorrichtung |
JPH0651350A (ja) * | 1992-08-03 | 1994-02-25 | Alps Electric Co Ltd | 表示装置 |
JPH06107881A (ja) * | 1992-09-30 | 1994-04-19 | Mitsubishi Rayon Co Ltd | 光拡散性メタクリル樹脂 |
JPH06177126A (ja) | 1992-12-01 | 1994-06-24 | Alps Electric Co Ltd | 薄膜積層体の形成方法 |
JPH0823102A (ja) * | 1994-07-08 | 1996-01-23 | Matsushita Electric Ind Co Ltd | 電子部品及びその製造方法 |
US5530293A (en) * | 1994-11-28 | 1996-06-25 | International Business Machines Corporation | Carbon-free hydrogen silsesquioxane with dielectric constant less than 3.2 annealed in hydrogen for integrated circuits |
US5686329A (en) * | 1995-12-29 | 1997-11-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for forming a metal oxide semiconductor field effect transistor (MOSFET) having improved hot carrier immunity |
GB2321336B (en) * | 1997-01-15 | 2001-07-25 | Univ Warwick | Gas-sensing semiconductor devices |
JP3859181B2 (ja) | 1997-03-27 | 2006-12-20 | 東京応化工業株式会社 | 導電パターン形成方法 |
US6121159A (en) * | 1997-06-19 | 2000-09-19 | Lsi Logic Corporation | Polymeric dielectric layers having low dielectric constants and improved adhesion to metal lines |
JPH1146006A (ja) * | 1997-07-25 | 1999-02-16 | Canon Inc | 光起電力素子およびその製造方法 |
JP3299167B2 (ja) | 1998-02-13 | 2002-07-08 | 日本板硝子株式会社 | 埋設電極付き基板の製造方法 |
JPH11232335A (ja) | 1998-02-13 | 1999-08-27 | Nec Corp | 注文管理装置 |
JPH11339672A (ja) | 1998-05-29 | 1999-12-10 | Sony Corp | 画像表示装置の製造方法 |
US6501098B2 (en) * | 1998-11-25 | 2002-12-31 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device |
US6225238B1 (en) * | 1999-06-07 | 2001-05-01 | Allied Signal Inc | Low dielectric constant polyorganosilicon coatings generated from polycarbosilanes |
JP3272326B2 (ja) | 1999-06-14 | 2002-04-08 | 三協化学株式会社 | 2−ピリジルピリジン誘導体の製造方法 |
KR20010046141A (ko) * | 1999-11-10 | 2001-06-05 | 구본준 | 박막 트랜지스터 및 배선 제조방법 |
EP1369928B1 (de) | 2001-02-19 | 2010-01-27 | International Business Machines Corporation | Verfahren zur herstellung einer dünnfilmtransistorstruktur |
US7045861B2 (en) * | 2002-03-26 | 2006-05-16 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, liquid-crystal display device and method for manufacturing same |
US6825517B2 (en) * | 2002-08-28 | 2004-11-30 | Cova Technologies, Inc. | Ferroelectric transistor with enhanced data retention |
TW200406829A (en) * | 2002-09-17 | 2004-05-01 | Adv Lcd Tech Dev Ct Co Ltd | Interconnect, interconnect forming method, thin film transistor, and display device |
US6887776B2 (en) * | 2003-04-11 | 2005-05-03 | Applied Materials, Inc. | Methods to form metal lines using selective electrochemical deposition |
-
2001
- 2001-12-18 EP EP01273779A patent/EP1369928B1/de not_active Expired - Lifetime
- 2001-12-18 DE DE60141225T patent/DE60141225D1/de not_active Expired - Lifetime
- 2001-12-18 US US10/468,431 patent/US6952036B2/en not_active Expired - Fee Related
- 2001-12-18 WO PCT/JP2001/011110 patent/WO2002067335A1/ja active Application Filing
- 2001-12-18 CN CNB018227236A patent/CN100459163C/zh not_active Expired - Fee Related
- 2001-12-18 KR KR1020037010725A patent/KR100650417B1/ko not_active IP Right Cessation
- 2001-12-18 JP JP2002566560A patent/JP4022470B2/ja not_active Expired - Fee Related
- 2001-12-18 AT AT01273779T patent/ATE456863T1/de not_active IP Right Cessation
-
2002
- 2002-02-07 TW TW091102189A patent/TW541705B/zh not_active IP Right Cessation
-
2005
- 2005-06-27 US US11/167,637 patent/US7326600B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US7326600B2 (en) | 2008-02-05 |
CN100459163C (zh) | 2009-02-04 |
WO2002067335A1 (fr) | 2002-08-29 |
EP1369928A1 (de) | 2003-12-10 |
KR20030077621A (ko) | 2003-10-01 |
EP1369928B1 (de) | 2010-01-27 |
US20050250262A1 (en) | 2005-11-10 |
EP1369928A4 (de) | 2006-01-11 |
ATE456863T1 (de) | 2010-02-15 |
JPWO2002067335A1 (ja) | 2004-06-24 |
US20040113161A1 (en) | 2004-06-17 |
TW541705B (en) | 2003-07-11 |
CN1489790A (zh) | 2004-04-14 |
US6952036B2 (en) | 2005-10-04 |
KR100650417B1 (ko) | 2006-11-28 |
DE60141225D1 (de) | 2010-03-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4022470B2 (ja) | 薄膜トランジスタ構造の製造方法、およびディスプレイ・デバイス | |
US8368856B2 (en) | Transflective liquid crystal display device and method of fabricating the same | |
TWI322288B (en) | Manufacture method of pixel array substrate | |
CN102707521B (zh) | 液晶显示装置 | |
US8791459B2 (en) | Array substrate, manufacturing method of the same, and fabricating method of display device including the array substrate | |
US7336324B2 (en) | Array substrate for liquid crystal display device and fabricating method thereof | |
CN101373736B (zh) | 互连、互连形成方法、薄膜晶体管及显示器 | |
JP2001312222A (ja) | アクティブマトリクス基板およびその製造方法並びに該基板を用いた表示装置および撮像装置 | |
US20090278126A1 (en) | Metal line substrate, thin film transistor substrate and method of forming the same | |
TW200423805A (en) | A pixel having an organic emitting diode and method of fabricating the pixel | |
US7999262B2 (en) | Thin film transistor, method of fabricating the same, and method of fabricating liquid crystal display device having the same | |
CN109638078B (zh) | Tft的制备方法、tft、oled背板和显示装置 | |
CN101165579A (zh) | 用于液晶显示装置的阵列基板及其制造方法 | |
US7678619B2 (en) | Method of manufacturing a thin film transistor matrix substrate | |
KR20130091081A (ko) | 박막트랜지스터 표시판과 이를 제조하는 방법 | |
US8048698B2 (en) | Thin film transistor array substrate and method for manufacturing the same | |
CN101013740A (zh) | 有机薄膜晶体管及其制造方法 | |
TWI352841B (en) | Thin film transistor array panel and manufacturing | |
CN108922892B (zh) | 阵列基板及其制作方法、显示面板 | |
US6961101B2 (en) | Copper alloy, array substrate of liquid crystal display using the same and method of fabricating the same | |
US20100136753A1 (en) | Fabricating method of thin film transistor | |
US20070264597A1 (en) | Method for manufacturing transflective liquid crystal display | |
JP4012405B2 (ja) | 薄膜トランジスタ液晶表示装置の製造方法 | |
CN115732539A (zh) | 薄膜晶体管、基板及其制备方法、显示装置 | |
KR20170013576A (ko) | 박막트랜지스터를 포함하는 기판 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20061121 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070119 Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20070119 |
|
RD12 | Notification of acceptance of power of sub attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7432 Effective date: 20070119 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20070119 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20070329 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070522 Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20070522 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20070612 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070619 Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20070619 |
|
TRDD | Decision of grant or rejection written | ||
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20070921 |
|
RD14 | Notification of resignation of power of sub attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7434 Effective date: 20070921 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20070921 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20071001 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101005 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101005 Year of fee payment: 3 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111005 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121005 Year of fee payment: 5 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121005 Year of fee payment: 5 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131005 Year of fee payment: 6 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |