CN101373736B - 互连、互连形成方法、薄膜晶体管及显示器 - Google Patents
互连、互连形成方法、薄膜晶体管及显示器 Download PDFInfo
- Publication number
- CN101373736B CN101373736B CN2008101352553A CN200810135255A CN101373736B CN 101373736 B CN101373736 B CN 101373736B CN 2008101352553 A CN2008101352553 A CN 2008101352553A CN 200810135255 A CN200810135255 A CN 200810135255A CN 101373736 B CN101373736 B CN 101373736B
- Authority
- CN
- China
- Prior art keywords
- copper
- film
- seed layer
- interconnection
- diffusion barrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims abstract description 45
- 239000010409 thin film Substances 0.000 title description 7
- 230000004888 barrier function Effects 0.000 claims abstract description 109
- 238000009792 diffusion process Methods 0.000 claims abstract description 109
- 238000009713 electroplating Methods 0.000 claims abstract description 32
- 238000007772 electroless plating Methods 0.000 claims abstract description 23
- 238000005530 etching Methods 0.000 claims abstract description 22
- 239000010949 copper Substances 0.000 claims description 297
- 229910052802 copper Inorganic materials 0.000 claims description 295
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 285
- 239000013078 crystal Substances 0.000 claims description 103
- 238000005516 engineering process Methods 0.000 claims description 54
- 230000015572 biosynthetic process Effects 0.000 claims description 36
- 229910004200 TaSiN Inorganic materials 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 229910008807 WSiN Inorganic materials 0.000 claims description 2
- 150000001879 copper Chemical class 0.000 claims 10
- 229910052751 metal Inorganic materials 0.000 abstract description 47
- 239000002184 metal Substances 0.000 abstract description 47
- 230000008569 process Effects 0.000 abstract description 8
- 239000012212 insulator Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 214
- 239000010410 layer Substances 0.000 description 209
- 239000000758 substrate Substances 0.000 description 70
- 230000002093 peripheral effect Effects 0.000 description 42
- 239000000463 material Substances 0.000 description 21
- 230000014509 gene expression Effects 0.000 description 17
- 238000004519 manufacturing process Methods 0.000 description 13
- 238000005498 polishing Methods 0.000 description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 12
- 229920005591 polysilicon Polymers 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 11
- 238000000137 annealing Methods 0.000 description 10
- 239000012528 membrane Substances 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 8
- 239000012535 impurity Substances 0.000 description 8
- 229910052698 phosphorus Inorganic materials 0.000 description 8
- 239000011574 phosphorus Substances 0.000 description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 229910052715 tantalum Inorganic materials 0.000 description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 4
- 238000005334 plasma enhanced chemical vapour deposition Methods 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000008393 encapsulating agent Substances 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 150000004820 halides Chemical class 0.000 description 2
- 239000003550 marker Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- TXUICONDJPYNPY-UHFFFAOYSA-N (1,10,13-trimethyl-3-oxo-4,5,6,7,8,9,11,12,14,15,16,17-dodecahydrocyclopenta[a]phenanthren-17-yl) heptanoate Chemical compound C1CC2CC(=O)C=C(C)C2(C)C2C1C1CCC(OC(=O)CCCCCC)C1(C)CC2 TXUICONDJPYNPY-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 229910021626 Tin(II) chloride Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000001119 stannous chloride Substances 0.000 description 1
- 235000011150 stannous chloride Nutrition 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- -1 that is Substances 0.000 description 1
- 229910001432 tin ion Inorganic materials 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (1)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP269661/2002 | 2002-09-17 | ||
JP2002269661 | 2002-09-17 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB031585094A Division CN100485918C (zh) | 2002-09-17 | 2003-09-17 | 互连、互连形成方法、薄膜晶体管及显示器 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101373736A CN101373736A (zh) | 2009-02-25 |
CN101373736B true CN101373736B (zh) | 2012-04-04 |
Family
ID=31986823
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2008101352553A Expired - Fee Related CN101373736B (zh) | 2002-09-17 | 2003-09-17 | 互连、互连形成方法、薄膜晶体管及显示器 |
CNB031585094A Expired - Fee Related CN100485918C (zh) | 2002-09-17 | 2003-09-17 | 互连、互连形成方法、薄膜晶体管及显示器 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB031585094A Expired - Fee Related CN100485918C (zh) | 2002-09-17 | 2003-09-17 | 互连、互连形成方法、薄膜晶体管及显示器 |
Country Status (4)
Country | Link |
---|---|
US (2) | US6890849B2 (zh) |
KR (1) | KR101004219B1 (zh) |
CN (2) | CN101373736B (zh) |
TW (1) | TW200406829A (zh) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE60141225D1 (de) * | 2001-02-19 | 2010-03-18 | Ibm | Verfahren zur herstellung einer dünnfilmtransistorstruktur |
JP2002252281A (ja) * | 2001-02-27 | 2002-09-06 | Sony Corp | 半導体装置およびその製造方法 |
JP3810718B2 (ja) * | 2002-08-30 | 2006-08-16 | 富士通株式会社 | 半導体装置の製造方法 |
WO2004027740A1 (en) * | 2002-09-20 | 2004-04-01 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
US7094684B2 (en) * | 2002-09-20 | 2006-08-22 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
KR20040072446A (ko) * | 2003-02-12 | 2004-08-18 | 삼성전자주식회사 | 반도체 기판의 가장자리 상의 금속막을 선택적으로제거하는 방법 |
US20060178007A1 (en) * | 2005-02-04 | 2006-08-10 | Hiroki Nakamura | Method of forming copper wiring layer |
TWI333808B (en) | 2005-05-05 | 2010-11-21 | Himax Tech Inc | A method of manufacturing a film printed circuit board |
CN100401466C (zh) * | 2005-05-23 | 2008-07-09 | 友达光电股份有限公司 | 薄膜晶体管阵列衬底及其金属层的制作方法 |
JP4964442B2 (ja) * | 2005-08-10 | 2012-06-27 | 三菱電機株式会社 | 薄膜トランジスタおよびその製造方法 |
KR101131135B1 (ko) * | 2005-11-14 | 2012-04-03 | 삼성전자주식회사 | 박막 트랜지스터 및 그 제조방법 |
TWI312578B (en) * | 2006-09-29 | 2009-07-21 | Innolux Display Corp | Thin film transistor substrate |
DE102006049354B3 (de) * | 2006-10-19 | 2008-06-05 | Infineon Technologies Ag | Verfahren zur Herstellung eines Anschlusskontakts auf einem Halbleiterkörper |
WO2008064070A1 (en) * | 2006-11-17 | 2008-05-29 | 3M Innovative Properties Company | Optical bonding composition for led light source |
EP2087533A2 (en) * | 2006-11-17 | 2009-08-12 | 3M Innovative Properties Company | Planarized led with optical extractor |
JP2010510685A (ja) * | 2006-11-20 | 2010-04-02 | スリーエム イノベイティブ プロパティズ カンパニー | Led光源用の光学接着組成物 |
JP4561732B2 (ja) * | 2006-11-20 | 2010-10-13 | トヨタ自動車株式会社 | 移動体位置測位装置 |
US20080296768A1 (en) * | 2006-12-14 | 2008-12-04 | Chebiam Ramanan V | Copper nucleation in interconnects having ruthenium layers |
JP2009295958A (ja) * | 2008-05-09 | 2009-12-17 | Panasonic Corp | 半導体装置 |
JP5525314B2 (ja) * | 2009-05-02 | 2014-06-18 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
CN102437100A (zh) * | 2011-09-08 | 2012-05-02 | 上海华力微电子有限公司 | 一种使用双大马士革工艺同时形成铜接触孔和第一层金属的方法 |
KR20140064550A (ko) * | 2012-11-20 | 2014-05-28 | 삼성디스플레이 주식회사 | 박막 트랜지스터 표시판의 제조 방법 |
US20140151095A1 (en) * | 2012-12-05 | 2014-06-05 | Samsung Electro-Mechanics Co., Ltd. | Printed circuit board and method for manufacturing the same |
KR102230619B1 (ko) | 2014-07-25 | 2021-03-24 | 삼성디스플레이 주식회사 | 박막 트랜지스터 기판 및 이의 제조 방법 |
KR102245730B1 (ko) | 2014-11-19 | 2021-04-29 | 삼성디스플레이 주식회사 | 박막트랜지스터 기판 |
US11309172B2 (en) | 2016-08-09 | 2022-04-19 | Purdue Research Foundation | Reaction monitoring |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6096648A (en) * | 1999-01-26 | 2000-08-01 | Amd | Copper/low dielectric interconnect formation with reduced electromigration |
US6413845B1 (en) * | 1999-04-13 | 2002-07-02 | Sharp Kabushiki Kaisha | Method for fabricating metal interconnections |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4020839A (en) * | 1976-02-26 | 1977-05-03 | Parke, Davis & Company | Medicament-dispensing package |
US4191225A (en) * | 1976-10-20 | 1980-03-04 | Ims Limited | Pharmaceutical cocktail package |
US4192919A (en) * | 1977-05-17 | 1980-03-11 | Mpl, Inc. | Blood sampling and culturing kit |
US4203443A (en) * | 1977-12-08 | 1980-05-20 | Abbott Laboratories | Additive transfer unit with interlocking means |
US4607671A (en) * | 1984-08-21 | 1986-08-26 | Baxter Travenol Laboratories, Inc. | Reconstitution device |
US4675020A (en) * | 1985-10-09 | 1987-06-23 | Kendall Mcgaw Laboratories, Inc. | Connector |
JPH02297342A (ja) * | 1988-09-28 | 1990-12-07 | Terumo Corp | 両刀針形の医療用針とホルダーを用いる採血及び/又は注射装置、並びに該装置に用いる両刀針形の医療用針及びホルダー |
CA2001732A1 (en) * | 1988-10-31 | 1990-04-30 | Lawrence A. Lynn | Intravenous line coupling device |
US5389086A (en) * | 1992-07-06 | 1995-02-14 | Sterling Winthrop Inc. | Safety cannula |
US5385547A (en) * | 1992-11-19 | 1995-01-31 | Baxter International Inc. | Adaptor for drug delivery |
JP3331400B2 (ja) * | 1993-01-22 | 2002-10-07 | 三信工業株式会社 | 舶用推進機の前後進切替え制御装置 |
EP0631342A1 (en) * | 1993-06-23 | 1994-12-28 | Ail Systems, Inc. | Antenna mirror scanner with constant polarization characteristics |
US5509912A (en) * | 1994-10-24 | 1996-04-23 | Vlv Associates | Connector |
US5653698A (en) * | 1995-01-13 | 1997-08-05 | Sanofi Winthrop, Inc. | Coupling systems for saftey cannula |
CA2241631C (en) * | 1995-12-28 | 2002-10-15 | Bio-Plexus, Inc. | Needle holder for fluid collection and/or injection system |
JP3619016B2 (ja) * | 1997-06-10 | 2005-02-09 | キヤノン株式会社 | 基板及びその製造方法 |
US5755696A (en) * | 1997-06-30 | 1998-05-26 | Becton, Dickinson And Company | Syringe filling and delivery device |
JP3501265B2 (ja) | 1997-10-30 | 2004-03-02 | 富士通株式会社 | 半導体装置の製造方法 |
US5897375A (en) | 1997-10-20 | 1999-04-27 | Motorola, Inc. | Chemical mechanical polishing (CMP) slurry for copper and method of use in integrated circuit manufacture |
JP3191759B2 (ja) | 1998-02-20 | 2001-07-23 | 日本電気株式会社 | 半導体装置の製造方法 |
JP3087719B2 (ja) * | 1998-04-08 | 2000-09-11 | 日本電気株式会社 | 半導体装置の製造方法及び製造装置 |
US6181012B1 (en) * | 1998-04-27 | 2001-01-30 | International Business Machines Corporation | Copper interconnection structure incorporating a metal seed layer |
JP3490038B2 (ja) | 1999-12-28 | 2004-01-26 | Necエレクトロニクス株式会社 | 金属配線形成方法 |
US6740591B1 (en) * | 2000-11-16 | 2004-05-25 | Intel Corporation | Slurry and method for chemical mechanical polishing of copper |
-
2003
- 2003-09-08 TW TW092124793A patent/TW200406829A/zh unknown
- 2003-09-12 US US10/660,702 patent/US6890849B2/en not_active Expired - Lifetime
- 2003-09-17 KR KR1020030064330A patent/KR101004219B1/ko not_active IP Right Cessation
- 2003-09-17 CN CN2008101352553A patent/CN101373736B/zh not_active Expired - Fee Related
- 2003-09-17 CN CNB031585094A patent/CN100485918C/zh not_active Expired - Fee Related
-
2004
- 2004-10-28 US US10/974,722 patent/US7138715B2/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6096648A (en) * | 1999-01-26 | 2000-08-01 | Amd | Copper/low dielectric interconnect formation with reduced electromigration |
US6413845B1 (en) * | 1999-04-13 | 2002-07-02 | Sharp Kabushiki Kaisha | Method for fabricating metal interconnections |
Non-Patent Citations (2)
Title |
---|
Joseph P.O'Kelly etc.Room temperature eletroless plating copper seed layerprocess for damascene interlevel metal structures.Microelectronic Engineering50 1-4.2000,50(1-4),475. |
Joseph P.O'Kelly etc.Room temperature eletroless plating copper seed layerprocess for damascene interlevel metal structures.Microelectronic Engineering50 1-4.2000,50(1-4),475. * |
Also Published As
Publication number | Publication date |
---|---|
CN101373736A (zh) | 2009-02-25 |
US6890849B2 (en) | 2005-05-10 |
TW200406829A (en) | 2004-05-01 |
US7138715B2 (en) | 2006-11-21 |
US20040051180A1 (en) | 2004-03-18 |
CN1490872A (zh) | 2004-04-21 |
KR101004219B1 (ko) | 2010-12-24 |
CN100485918C (zh) | 2009-05-06 |
US20050082538A1 (en) | 2005-04-21 |
KR20040025598A (ko) | 2004-03-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101373736B (zh) | 互连、互连形成方法、薄膜晶体管及显示器 | |
US6887776B2 (en) | Methods to form metal lines using selective electrochemical deposition | |
US8110748B2 (en) | Wiring, display device and method of manufacturing the same | |
KR100882402B1 (ko) | 액정표시장치의 기판 및 그 제조방법 | |
US8158499B2 (en) | Wire structure, method for fabricating wire, thin film transistor substrate, and method for fabricating thin film transistor substrate | |
US7326600B2 (en) | Method for manufacturing a thin-film transistor structure | |
US7808108B2 (en) | Thin film conductor and method of fabrication | |
CN100524701C (zh) | 薄膜晶体管阵列面板及其制造方法 | |
US6395586B1 (en) | Method for fabricating high aperture ratio TFT's and devices formed | |
JPH1041519A (ja) | 液晶表示装置の製造方法及びその製造方法による液晶表示装置 | |
US20070040954A1 (en) | Wire structure, a method for fabricating a wire, a thin film transistor substrate, and a method for fabricating the thin film transistor substrate | |
CN100448012C (zh) | 显示装置的薄膜晶体管基板及其制造方法 | |
JPH10133233A (ja) | アクティブマトリクス型表示回路およびその作製方法 | |
US20020064894A1 (en) | Buried transistor for a liquid crystal display system | |
JP4495428B2 (ja) | 薄膜トランジスタの形成方法 | |
JPH09260668A (ja) | 薄膜トランジスタおよびその製造方法 | |
JP2005038994A (ja) | 薄膜トランジスタ及びその製造方法と、この薄膜トランジスタを備える表示装置及びその表示装置の製造方法 | |
KR100580825B1 (ko) | 액티브 메트릭스 기판 제조방법 및 이에 의해 제조되는 게이트 | |
TWI279860B (en) | Method for forming metal wiring and method for manufacturing display device | |
KR100303710B1 (ko) | 비정질실리콘박막트랜지스터와액정표시소자구조및제조방법 | |
JPH10229195A (ja) | 非感光性縦型冗長2チャネル薄膜トランジスタ及び製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SHARP CO., LTD. Free format text: FORMER OWNER: CO., LTD LCD ADVANCED TECHNOLOGY DEVELOPMENT CENTER Effective date: 20100409 |
|
C41 | Transfer of patent application or patent right or utility model | ||
COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: KANAGAWA PREFECTURE, JAPAN COUNTY TO: OSAKA, JAPAN |
|
TA01 | Transfer of patent application right |
Effective date of registration: 20100409 Address after: Osaka Applicant after: Sharp Corporation Address before: Kanagawa Applicant before: Liguid Crystal Advanced Technology Development Center K. K. |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120404 Termination date: 20160917 |