ATE122176T1 - Verfahren zur herstellung einer halbleiteranordnung mit gatestruktur. - Google Patents

Verfahren zur herstellung einer halbleiteranordnung mit gatestruktur.

Info

Publication number
ATE122176T1
ATE122176T1 AT91304827T AT91304827T ATE122176T1 AT E122176 T1 ATE122176 T1 AT E122176T1 AT 91304827 T AT91304827 T AT 91304827T AT 91304827 T AT91304827 T AT 91304827T AT E122176 T1 ATE122176 T1 AT E122176T1
Authority
AT
Austria
Prior art keywords
producing
gate structure
semiconductor arrangement
electron donating
main surface
Prior art date
Application number
AT91304827T
Other languages
English (en)
Inventor
Shigeyuki C O Canon Matsumoto
Hiroshi C O Canon K Yuzurihara
Mamoru C O Canon Kabu Miyawaki
Shunsuke C O Canon Kabus Inoue
Jun C O Canon Kabushi Nakayama
Original Assignee
Canon Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Kk filed Critical Canon Kk
Application granted granted Critical
Publication of ATE122176T1 publication Critical patent/ATE122176T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
    • H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66659—Lateral single gate silicon transistors with asymmetry in the channel direction, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7836—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a significant overlap between the lightly doped extension and the gate electrode

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
AT91304827T 1990-05-31 1991-05-29 Verfahren zur herstellung einer halbleiteranordnung mit gatestruktur. ATE122176T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP14373490 1990-05-31
JP14454390 1990-06-04

Publications (1)

Publication Number Publication Date
ATE122176T1 true ATE122176T1 (de) 1995-05-15

Family

ID=26475389

Family Applications (1)

Application Number Title Priority Date Filing Date
AT91304827T ATE122176T1 (de) 1990-05-31 1991-05-29 Verfahren zur herstellung einer halbleiteranordnung mit gatestruktur.

Country Status (4)

Country Link
US (1) US5599741A (de)
EP (1) EP0459770B1 (de)
AT (1) ATE122176T1 (de)
DE (1) DE69109366T2 (de)

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* Cited by examiner, † Cited by third party
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DE69109366T2 (de) * 1990-05-31 1995-10-19 Canon Kk Verfahren zur Herstellung einer Halbleiteranordnung mit Gatestruktur.
TW435820U (en) * 1993-01-18 2001-05-16 Semiconductor Energy Lab MIS semiconductor device
KR950021242A (ko) * 1993-12-28 1995-07-26 김광호 다결정 실리콘 박막 트랜지스터 및 그 제조 방법
US6159854A (en) * 1994-08-22 2000-12-12 Fujitsu Limited Process of growing conductive layer from gas phase
JPH09102591A (ja) * 1995-07-28 1997-04-15 Toshiba Corp 半導体装置及びその製造方法
KR100203896B1 (ko) * 1995-12-15 1999-06-15 김영환 게이트 전극 형성방법
US5838176A (en) * 1996-07-11 1998-11-17 Foveonics, Inc. Correlated double sampling circuit
JPH10214964A (ja) * 1997-01-30 1998-08-11 Oki Electric Ind Co Ltd Ｍｏｓｆｅｔ及びその製造方法
JPH11186194A (ja) * 1997-12-19 1999-07-09 Nec Corp 半導体装置の製造方法
US6211001B1 (en) * 1998-07-24 2001-04-03 Sharp Laboratories Of America, Inc. Electrostatic discharge protection for salicided devices and method of making same
JP2000098116A (ja) * 1998-09-18 2000-04-07 Canon Inc 素子又は素子作製用モールド型の作製方法
US6617644B1 (en) 1998-11-09 2003-09-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US6248638B1 (en) * 1998-12-18 2001-06-19 Texas Instruments Incorporated Enhancements to polysilicon gate
JP2000195821A (ja) * 1998-12-24 2000-07-14 Nec Corp 半導体製造方法及び装置
JP3450758B2 (ja) * 1999-09-29 2003-09-29 株式会社東芝 電界効果トランジスタの製造方法
JP2001111040A (ja) * 1999-10-13 2001-04-20 Oki Electric Ind Co Ltd 電界効果トランジスタの製造方法
TWI286338B (en) * 2000-05-12 2007-09-01 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
TW480576B (en) * 2000-05-12 2002-03-21 Semiconductor Energy Lab Semiconductor device and method for manufacturing same
US7927950B2 (en) * 2002-05-07 2011-04-19 Samsung Electronics Co., Ltd. Method of fabricating trap type nonvolatile memory device
KR100655441B1 (ko) * 2005-09-01 2006-12-08 삼성전자주식회사 트랩형 비휘발성 메모리 장치의 제조 방법
JP2012242172A (ja) * 2011-05-17 2012-12-10 Canon Inc ゲート電極が駆動する電界効果型トランジスタおよびそれを有するセンサデバイス
KR101521712B1 (ko) * 2013-10-22 2015-05-19 삼성전기주식회사 압저항 감지모듈 및 이를 포함하는 mems 센서

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US4356623A (en) * 1980-09-15 1982-11-02 Texas Instruments Incorporated Fabrication of submicron semiconductor devices
US4570328A (en) * 1983-03-07 1986-02-18 Motorola, Inc. Method of producing titanium nitride MOS device gate electrode
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JPS60245281A (ja) * 1984-05-21 1985-12-05 Matsushita Electronics Corp 半導体装置の製造方法
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JPS61252776A (ja) * 1985-05-01 1986-11-10 Victor Co Of Japan Ltd フイ−ルド判別信号記録再生装置
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Also Published As

Publication number Publication date
EP0459770B1 (de) 1995-05-03
US5599741A (en) 1997-02-04
EP0459770A2 (de) 1991-12-04
DE69109366D1 (de) 1995-06-08
DE69109366T2 (de) 1995-10-19
EP0459770A3 (en) 1992-01-22

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