DE69132262D1 - Verfahren zur Herstellung eines Halbleiterbauelementes mit zu Source- und Drainelektrode selbstjustiertem Gate - Google Patents

Verfahren zur Herstellung eines Halbleiterbauelementes mit zu Source- und Drainelektrode selbstjustiertem Gate

Info

Publication number
DE69132262D1
DE69132262D1 DE69132262T DE69132262T DE69132262D1 DE 69132262 D1 DE69132262 D1 DE 69132262D1 DE 69132262 T DE69132262 T DE 69132262T DE 69132262 T DE69132262 T DE 69132262T DE 69132262 D1 DE69132262 D1 DE 69132262D1
Authority
DE
Germany
Prior art keywords
gate
aligned
self
producing
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69132262T
Other languages
English (en)
Inventor
Yoshihiro Kishita
Masanori Ochi
Souichi Imamura
Toshikazu Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69132262D1 publication Critical patent/DE69132262D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66848—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET
    • H01L29/66856—Unipolar field-effect transistors with a Schottky gate, i.e. MESFET with an active layer made of a group 13/15 material
    • H01L29/66863—Lateral single gate transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H01L21/28587—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds characterised by the sectional shape, e.g. T, inverted T
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
DE69132262T 1990-01-24 1991-01-22 Verfahren zur Herstellung eines Halbleiterbauelementes mit zu Source- und Drainelektrode selbstjustiertem Gate Expired - Lifetime DE69132262D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1403390 1990-01-24
JP2403938A JPH03292744A (ja) 1990-01-24 1990-12-19 化合物半導体装置およびその製造方法

Publications (1)

Publication Number Publication Date
DE69132262D1 true DE69132262D1 (de) 2000-08-03

Family

ID=26349916

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69132262T Expired - Lifetime DE69132262D1 (de) 1990-01-24 1991-01-22 Verfahren zur Herstellung eines Halbleiterbauelementes mit zu Source- und Drainelektrode selbstjustiertem Gate

Country Status (4)

Country Link
US (1) US5409849A (de)
EP (1) EP0439114B1 (de)
JP (1) JPH03292744A (de)
DE (1) DE69132262D1 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0444328A (ja) * 1990-06-11 1992-02-14 Mitsubishi Electric Corp 半導体装置及びその製造方法
JPH04167439A (ja) * 1990-10-30 1992-06-15 Mitsubishi Electric Corp 半導体装置の製造方法
JP2735718B2 (ja) * 1991-10-29 1998-04-02 三菱電機株式会社 化合物半導体装置及びその製造方法
JPH05198598A (ja) * 1992-01-22 1993-08-06 Mitsubishi Electric Corp 化合物半導体装置及びその製造方法
EP0569745A1 (de) * 1992-05-14 1993-11-18 Siemens Aktiengesellschaft Verfahren zur Herstellung eines Feldeffekttransistoren mit asymmetrischer Gate-Struktur
JP3631506B2 (ja) * 1994-02-18 2005-03-23 三菱電機株式会社 電界効果トランジスタの製造方法
US5514605A (en) * 1994-08-24 1996-05-07 Nec Corporation Fabrication process for compound semiconductor device
JPH08264562A (ja) * 1995-03-24 1996-10-11 Mitsubishi Electric Corp 半導体装置，及びその製造方法
US5759880A (en) * 1997-01-02 1998-06-02 Motorola, Inc. Resistless methods of fabricating FETs
JP2005026325A (ja) * 2003-06-30 2005-01-27 Toshiba Corp 半導体装置および半導体装置の製造方法
US7045404B2 (en) * 2004-01-16 2006-05-16 Cree, Inc. Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereof
US7470967B2 (en) 2004-03-12 2008-12-30 Semisouth Laboratories, Inc. Self-aligned silicon carbide semiconductor devices and methods of making the same
US7834380B2 (en) * 2004-12-09 2010-11-16 Panasonic Corporation Field effect transistor and method for fabricating the same
EP2816588B1 (de) 2005-06-20 2016-09-21 Nippon Telegraph And Telephone Corporation Verfahren zur Herstellung von Diamantenhalbleiterelementen
US8368052B2 (en) 2009-12-23 2013-02-05 Intel Corporation Techniques for forming contacts to quantum well transistors
US8383471B1 (en) 2011-04-11 2013-02-26 Hrl Laboratories, Llc Self aligned sidewall gate GaN HEMT
JP6176131B2 (ja) * 2014-01-28 2017-08-09 豊田合成株式会社 半導体装置の製造方法
JP6406080B2 (ja) * 2015-03-17 2018-10-17 豊田合成株式会社 半導体装置の製造方法
KR102617144B1 (ko) * 2022-12-26 2023-12-27 한국과학기술원 Hemt 소자, 모놀리식 3차원 집적 소자 및 그들의 제조 방법

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1265017A (de) * 1968-08-19 1972-03-01
JPS59114871A (ja) * 1982-12-21 1984-07-03 Toshiba Corp シヨツトキ−ゲ−ト型ＧａＡｓ電界効果トランジスタの製造方法
US4545109A (en) * 1983-01-21 1985-10-08 Rca Corporation Method of making a gallium arsenide field effect transistor
US4656076A (en) * 1985-04-26 1987-04-07 Triquint Semiconductors, Inc. Self-aligned recessed gate process
JPS62156876A (ja) * 1985-12-28 1987-07-11 Matsushita Electronics Corp 半導体装置
DE3706274A1 (de) * 1986-02-28 1987-09-03 Hitachi Ltd Halbleiterelement und verfahren zu dessen herstellung
US4731339A (en) * 1986-08-25 1988-03-15 Rockwell International Corporation Process for manufacturing metal-semiconductor field-effect transistors
JPS63204658A (ja) * 1987-02-20 1988-08-24 Hitachi Ltd 化合物半導体装置
JPS644081A (en) * 1987-06-25 1989-01-09 Nec Corp Semiconductor device
KR920009718B1 (ko) * 1987-08-10 1992-10-22 스미도모덴기고오교오 가부시기가이샤 화합물반도체장치 및 그 제조방법
JP2612836B2 (ja) * 1987-09-23 1997-05-21 シーメンス、アクチエンゲゼルシヤフト 自己整合ゲートを備えるｍｅｓｆｅｔの製造方法
JPH01194475A (ja) * 1988-01-29 1989-08-04 Sumitomo Electric Ind Ltd 電界効果トランジスタ及びその製造方法
JPH0216734A (ja) * 1988-07-05 1990-01-19 Sanyo Electric Co Ltd 半導体装置の製造方法
JPH02148740A (ja) * 1988-11-29 1990-06-07 Fujitsu Ltd 半導体装置及びその製造方法
CH682528A5 (fr) * 1990-03-16 1993-09-30 Westonbridge Int Ltd Procédé de réalisation par attaque chimique d'au moins une cavité dans un substrat et substrat obtenu par ce procédé.
US5264379A (en) * 1990-05-14 1993-11-23 Sumitomo Electric Industries, Inc. Method of making a hetero-junction bipolar transistor
JPH04130619A (ja) * 1990-09-20 1992-05-01 Mitsubishi Electric Corp 半導体装置の製造方法
EP0592064B1 (de) * 1992-08-19 1998-09-23 Mitsubishi Denki Kabushiki Kaisha Verfahren zur Herstellung eines Feldeffekttransistors

Also Published As

Publication number Publication date
JPH03292744A (ja) 1991-12-24
EP0439114A1 (de) 1991-07-31
US5409849A (en) 1995-04-25
EP0439114B1 (de) 2000-06-28

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