DE69326123D1 - Dünnfilmtransistor und verfahren zur herstellung eines dünnfilmtransistors - Google Patents
Dünnfilmtransistor und verfahren zur herstellung eines dünnfilmtransistorsInfo
- Publication number
- DE69326123D1 DE69326123D1 DE69326123T DE69326123T DE69326123D1 DE 69326123 D1 DE69326123 D1 DE 69326123D1 DE 69326123 T DE69326123 T DE 69326123T DE 69326123 T DE69326123 T DE 69326123T DE 69326123 D1 DE69326123 D1 DE 69326123D1
- Authority
- DE
- Germany
- Prior art keywords
- thin film
- film transistor
- producing
- transistor
- thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010409 thin film Substances 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1251—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
- H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
- H01L29/78627—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile with a significant overlap between the lightly doped drain and the gate electrode, e.g. GOLDD
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16602192 | 1992-06-24 | ||
JP31533192 | 1992-11-25 | ||
JP32531592 | 1992-12-04 | ||
PCT/JP1993/000849 WO1994000882A1 (en) | 1992-06-24 | 1993-06-23 | Thin film transistor, solid-state device, display device, and method for manufacturing thin film transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69326123D1 true DE69326123D1 (de) | 1999-09-30 |
DE69326123T2 DE69326123T2 (de) | 1999-12-23 |
Family
ID=27322616
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69326123T Expired - Lifetime DE69326123T2 (de) | 1992-06-24 | 1993-06-23 | Dünnfilmtransistor und verfahren zur herstellung eines dünnfilmtransistors |
Country Status (6)
Country | Link |
---|---|
US (2) | US5508216A (de) |
EP (1) | EP0602250B1 (de) |
KR (1) | KR100309934B1 (de) |
DE (1) | DE69326123T2 (de) |
TW (1) | TW268133B (de) |
WO (1) | WO1994000882A1 (de) |
Families Citing this family (53)
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US5953582A (en) * | 1993-02-10 | 1999-09-14 | Seiko Epson Corporation | Active matrix panel manufacturing method including TFTS having variable impurity concentration levels |
DE19500380C2 (de) * | 1994-05-20 | 2001-05-17 | Mitsubishi Electric Corp | Aktivmatrix-Flüssigkristallanzeige und Herstellungsverfahren dafür |
JP3403812B2 (ja) * | 1994-05-31 | 2003-05-06 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタを用いた半導体装置の作製方法 |
US6133620A (en) * | 1995-05-26 | 2000-10-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and process for fabricating the same |
US5915174A (en) * | 1994-09-30 | 1999-06-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for producing the same |
JP3494720B2 (ja) * | 1994-11-01 | 2004-02-09 | 株式会社半導体エネルギー研究所 | 半導体装置及びその作製方法、ならびにアクティブマトリクス型の液晶ディスプレー及びイメージセンサー |
KR0146899B1 (ko) * | 1994-11-28 | 1998-09-15 | 김광호 | 액정 디스플레이 박막트랜지스터소자 및 제조 방법 |
KR0145900B1 (ko) * | 1995-02-11 | 1998-09-15 | 김광호 | 박막 트랜지스터 액정디스플레이 소자 및 그 제조방법 |
JP3292657B2 (ja) * | 1995-04-10 | 2002-06-17 | キヤノン株式会社 | 薄膜トランジスタ及びそれを用いた液晶表示装置の製造法 |
US6933182B1 (en) * | 1995-04-20 | 2005-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a semiconductor device and manufacturing system thereof |
KR100218500B1 (ko) | 1995-05-17 | 1999-09-01 | 윤종용 | 실리콘막 및 그 제조 방법과 이를 포함하는 박막트랜지스터 및 그 제조방법 |
JPH0955499A (ja) * | 1995-08-11 | 1997-02-25 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
KR100192593B1 (ko) * | 1996-02-21 | 1999-07-01 | 윤종용 | 폴리 실리콘 박막 트랜지스터의 제조방법 |
JP3527009B2 (ja) * | 1996-03-21 | 2004-05-17 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
JP3525316B2 (ja) * | 1996-11-12 | 2004-05-10 | 株式会社半導体エネルギー研究所 | アクティブマトリクス型表示装置 |
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KR100269600B1 (ko) * | 1997-09-24 | 2000-10-16 | 김영환 | 박막트랜지스터의 제조방법 |
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KR19990039940A (ko) * | 1997-11-15 | 1999-06-05 | 구자홍 | 박막트랜지스터 제조방법 |
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JP4536186B2 (ja) * | 1998-11-16 | 2010-09-01 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6501098B2 (en) | 1998-11-25 | 2002-12-31 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device |
KR20000033832A (ko) * | 1998-11-26 | 2000-06-15 | 윤종용 | 액정 표시 장치용 다결정 규소 박막 트랜지스터 기판의 제조 방법 |
JP4641582B2 (ja) * | 1998-12-18 | 2011-03-02 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6469317B1 (en) | 1998-12-18 | 2002-10-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of fabricating the same |
JP4372943B2 (ja) * | 1999-02-23 | 2009-11-25 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
KR100654927B1 (ko) * | 1999-03-04 | 2006-12-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그의 제작방법 |
US6531713B1 (en) | 1999-03-19 | 2003-03-11 | Semiconductor Energy Laboratory Co., Ltd. | Electro-optical device and manufacturing method thereof |
TW444257B (en) | 1999-04-12 | 2001-07-01 | Semiconductor Energy Lab | Semiconductor device and method for fabricating the same |
KR100333276B1 (ko) * | 1999-05-20 | 2002-04-24 | 구본준, 론 위라하디락사 | 액정표시장치의 tft 및 그 제조방법 |
US7245018B1 (en) * | 1999-06-22 | 2007-07-17 | Semiconductor Energy Laboratory Co., Ltd. | Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof |
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WO2002095834A1 (en) * | 2001-05-18 | 2002-11-28 | Sanyo Electric Co., Ltd. | Thin film transistor and active matrix type display unit production methods therefor |
JP5038560B2 (ja) | 2001-08-01 | 2012-10-03 | ゲットナー・ファンデーション・エルエルシー | 電界効果型トランジスタ及びその製造方法並びに該トランジスタを使った液晶表示装置及びその製造方法 |
JP4256087B2 (ja) * | 2001-09-27 | 2009-04-22 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
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JP4211644B2 (ja) * | 2004-03-15 | 2009-01-21 | セイコーエプソン株式会社 | 電気光学装置の製造方法 |
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US8896065B2 (en) * | 2008-04-14 | 2014-11-25 | Sharp Laboratories Of America, Inc. | Top gate thin film transistor with independent field control for off-current suppression |
JP5234333B2 (ja) * | 2008-05-28 | 2013-07-10 | Nltテクノロジー株式会社 | ゲート線駆動回路、アクティブマトリクス基板及び液晶表示装置 |
JP2015065202A (ja) | 2013-09-24 | 2015-04-09 | 株式会社東芝 | 半導体素子、表示装置、半導体素子の製造方法及び表示装置の製造方法 |
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JP2811786B2 (ja) * | 1989-08-22 | 1998-10-15 | セイコーエプソン株式会社 | 薄膜トランジスタ |
JP2979196B2 (ja) * | 1990-09-05 | 1999-11-15 | セイコーインスツルメンツ株式会社 | 光弁用半導体基板装置及びその製造方法 |
JPH04139764A (ja) * | 1990-10-01 | 1992-05-13 | Canon Inc | 絶縁ゲート薄膜トランジスタの製造方法 |
JP2794678B2 (ja) * | 1991-08-26 | 1998-09-10 | 株式会社 半導体エネルギー研究所 | 絶縁ゲイト型半導体装置およびその作製方法 |
JP2650543B2 (ja) * | 1991-11-25 | 1997-09-03 | カシオ計算機株式会社 | マトリクス回路駆動装置 |
US5266504A (en) * | 1992-03-26 | 1993-11-30 | International Business Machines Corporation | Low temperature emitter process for high performance bipolar devices |
-
1993
- 1993-06-23 WO PCT/JP1993/000849 patent/WO1994000882A1/ja active IP Right Grant
- 1993-06-23 DE DE69326123T patent/DE69326123T2/de not_active Expired - Lifetime
- 1993-06-23 EP EP93913567A patent/EP0602250B1/de not_active Expired - Lifetime
- 1993-06-23 US US08/199,185 patent/US5508216A/en not_active Expired - Lifetime
- 1993-06-23 KR KR1019940700563A patent/KR100309934B1/ko not_active IP Right Cessation
- 1993-07-21 TW TW082105812A patent/TW268133B/zh not_active IP Right Cessation
-
1997
- 1997-06-24 US US08/881,097 patent/US5757048A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5508216A (en) | 1996-04-16 |
TW268133B (de) | 1996-01-11 |
US5757048A (en) | 1998-05-26 |
KR100309934B1 (ko) | 2002-06-20 |
WO1994000882A1 (en) | 1994-01-06 |
DE69326123T2 (de) | 1999-12-23 |
KR940702312A (ko) | 1994-07-28 |
EP0602250A1 (de) | 1994-06-22 |
EP0602250B1 (de) | 1999-08-25 |
EP0602250A4 (de) | 1996-01-03 |
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