KR940702312A - 박막 트랜지스터, 고체장치, 표시장치 및, 박막 트랜지스터의 제조방법(Thin film transistor, solid device, display device and manufacturing mothed of a thin film transistor) - Google Patents

박막 트랜지스터, 고체장치, 표시장치 및, 박막 트랜지스터의 제조방법(Thin film transistor, solid device, display device and manufacturing mothed of a thin film transistor)

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KR940702312A
KR940702312A KR1019940700563A KR19940700563A KR940702312A KR 940702312 A KR940702312 A KR 940702312A KR 1019940700563 A KR1019940700563 A KR 1019940700563A KR 19940700563 A KR19940700563 A KR 19940700563A KR 940702312 A KR940702312 A KR 940702312A
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thin film
film transistor
region
low concentration
transistor according
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KR100309934B1 (ko
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사또시 이노우에
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아이자와 스스무
세이꼬 엡슨 가부시끼가이샤(Seiko Epson Corporation)
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    • H01L29/66409—Unipolar field-effect transistors
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Abstract

본 발명은 오프 전류 특성과 같은 전기적 특성을 향상시키는 박막 트랜지스터와, 박막 트랜지스터의 제조 방법에 관한 것이다. 박막 트랜지스터(110)는 약 400A의 n-실리콘막(저농도 영역)으로 구성된 n-소스 영역(112)과 n-드레인 영역(113)을 가지며, 이는 비정질 실리콘에 SCP 법과 같은 결정화 처리를 실행함으로써 만들어진 실리콘막이고, 결정화처리는 불순물 도입 이후에 불순물의 활성화를 실행한다. 게이트 전극(116)은 금속 전극이고, n-소스 영역(112)과 n-드레인 영역(113)이 형성된 후에 형성된다. 게이트 전극(116), n-소스 영역(112) 및 n-드레인 영역(113)은 자동 정렬적으로 형성되지 않는다.

Description

박막 트랜지스터, 고체장치, 표시장치 및, 박막 트랜지스터의 제조방법(Thin film transistor, solid device, display device and manufacturing mothed of a thin film transistor)
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 제1실시예에 따른 박막 트랜지스터의 구조를 도시한 단면도, 제2A도는 제1도에 도시한 박막 트랜지스터의 오프 전류 특성을 도시한 그래프, 제2B도는 비교 실시예에 따른 박막 트랜지스터의 오프 전류 특성을 도시한 그래프, 제3A도는 제1도에 도시한 박막 트랜지스터의 기생 용량을 도시한 설명도, 제3B도는 비교 실시예에 따른 박막 트랜지스터의 기생 용량을 도시한 설명도.

Claims (22)

  1. 기판의 표면상에 소스 영역과 드레인 영역 사이에 채널을 형성할 수 있는 채널 영역과, 채널 영역의 표면상의 게이트 절연막을 통해서 상기 채널 영역과 직면하는 게이트 전극을 포함하며, 상기 소스 영역과 상기 드레인 영역에서 상기 게이트 전극의 단부를 상기 게이트 절연막을 통해서 중복시키는 영역은 게이트 전극이 형성되는 공정보다 앞선 공정으로 형성된 저농도 영역인 것을 특징으로 하는 박막 트랜지스터.
  2. 제1항에 있어서, 저농도 영역의 불수물 농도는 1×1020cm-3보다 적거나 같은 것을 특징으로 하는 박막 트랜지스터.
  3. 제1항 또는 제2항에 있어서, 상기 저농도 영역은 불순물이 상기 기판의 표면상에 형성된 실리콘막에 도입된 후에 결정화 처리가 실시되는 영역인 것을 특징으로 하는 박막 트랜지스터.
  4. 제1항 내지 제3항중 어느 한 항에 있어서, 상기 소스 영역과 상기 드레인 영역은 고불순물 농도를 갖는 상기 각 저농도 영역에 접속되는 저 레지스트 영역을 가지는 것을 특징으로 하는 박막 트랜지스터.
  5. 제1항 내지 제3항중 어느 한 항에 있어서, 상기 소스 영역과 상기 드레인 영역은 상기 저농도 영역의 막보다 더 두꺼운 막을 갖는 상기 저농도 영역에 접속되는 저 레지스트 영역을 가지는 것을 특징으로 하는 박막 트랜지스터.
  6. 제1항 내지 제5항중 어느 한 항에 있어서, 상기 채널, 영역과, 상기 저 레지스트 영역의 소스 영역 및 드레인 영역은 다른 공정으로 형성된 영역인 것을 특징으로 하는 박막 트랜지스터.
  7. 제1항 내지 제6항중 어느 한 항에 있어서, 상기 저농도 영역의 막 두께는 상기 채널 영역의 막 두께와 동일한 것을 특징으로 하는 박막 트랜지스터.
  8. 제1항 내지 제7항중 어느 한 항에 있어서, 상기 저농도 영역의 막 두께는 상기 게이트 전극에 전위가 인가될 때 상기 막 두께가 저농도 영역의 불순물 농도에 의해 결정되는 상태로 형성된 공핍층보다 더 얇은 것을 특징으로 하는 박막 트랜지스터.
  9. 제1항 내지 제8항중 어느 한 항에 있어서, 상기 저농도 영역의 막 두께는 500Å보다 얇거나 동일한 것을 특징으로 하는 박막 트랜지스터.
  10. 제1항 내지 제8항중 어느 한 항에 따른 박막 트랜지스터를 갖는 것을 특징으로 하는 박막 트랜지스터.
  11. 제1항 내지 제9항중 어느 한 항에 따른 박막 트랜지스터와, 상기 박막 트랜지스터에 대해서 역도전형이고 그 소스 영역과 드레인 영역이 게이트 전극에 대해 자동 정렬적으로 형성되는 박막 트랜지스터로 구성된 CMOS 회로를 포함하는 것을 특징으로 하는 고체장치.
  12. 활성 매트릭스 배열의 화소 트랜지스터와 같은 제1항 내지 제9항중 어느 한 항에 따른 박막 트랜지스터를 포함하는 것을 특징으로 하는 표시 장치.
  13. 제12항에 있어서, 상기 드레인 영역은 그 구성부분과 동시에 형성되고 선행상태의 주사선 사이에 저장 용량을 형성하는 연장 영역을 가지는 것을 특징으로 하는 표시 장치.
  14. 제12항 또는 제13항에 있어서, 상기 활성 매트릭스 배열과 함께 동일 기판상에 형성된 구동회로에서 그 CMOS 회로가 상기 박막 트랜지스터와 같은 비자동 정렬 구조를 갖는 박막 트랜지스터와, 박막 트랜지스터에 대해서 도전형이 역전되고 게이트 전극에 대해 자동 정렬적으로 형성된 박막 트랜지스터를 가지는 것을 특징으로 하는 표시 장치.
  15. 제12항 또는 제13항에 있어서, 상기 활성 매트릭스 배열과 함께 동일 기판상에 형성된 구동회로에서 그 CMOS 회로가 상기 박막 트랜지스터와 같은 자동 정렬적으로 형성된 n채널형 박막 트랜지스터와 p채널형 박막 트랜지스터를 가지는 것을 특징으로 하는 표시 장치.
  16. 제14항 또는 제15항에 있어서, 상기 기판상에 형성된 박막 트랜지스터중에, 상기 자동 정렬 박막 트랜지스터의 소스 영역과 드레인 영역의 막 두께는 상기 비자동 정렬 박막 트랜지스터의 저농도 영역의 막 두께와 동일한 것을 특징으로 하는 표시 장치.
  17. 제14항 내지 제16항중 어느 한 항에 있어서, 상기 자동 정렬 박막 트랜지스터의 소스 영역과 드레인 영역은 약 1×1023cm-3이상의 불순물 농도를 가지는 반면에, 상기 비자동 정렬 박막 트랜지스터의 상기 저농도 영역은 약 1×1023cm-3이하의 불순물 농도를 가지는 것을 특징으로 하는 표시 장치.
  18. 제1항에 따른 박막 트랜지스터의 제조방법에 있어서, 상기 저농도 영역이 상기 기판상의 표면상에 형성되는 공정은 상기 게이트 전극이 형성되는 공정전에 실행되는 것을 특징으로 하는 표시 장치.
  19. 제18항에 있어서, 불순물이 상기 실리콘막 내부에 도입된 후에 실리콘막상에 인가된 결정화 처리가 불순물을 활성화하도록 적어도 상기 저농도 영역을 형성하기 위해 실리콘막을 형성하는 것을 특징으로 하는 박막 트랜지스터의 제조 방법.
  20. 제18항에 있어서, 상기 결정화 처리는 상기 실리콘막에 대해서 레이저 비임을 조사해서 상기 막을 결정화함과 동시에 상기 막 내부에서 불순물을 활성화시키는 레이져 어닐링법인 것을 특징으로 하는 박막 트랜지스터의 제조 방법.
  21. 제18항에 있어서, 상기 결정화 처리는 상기 실리콘막이 저온에서 장시간 동안 어닐링되어 상기 막을 결정화함과 동시에 상기 막 내부에서 불순물을 활성화시키는 고상 성장법인 것을 특징으로 하는 박막 트랜지스터의 제조 방법.
  22. 제18항에 있어서, 상기 결정화 처리는 상기 실리콘막이 램프 어닐링되어 상기 막을 결정화함과 동시에 상기 막 내부에서 불순물을 활성화시키는 고속 열 어닐링법인 것을 특징으로 하는 박막 트랜지스터의 제조 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019940700563A 1992-06-24 1993-06-23 박막트랜지스터,고체장치,표시장치,및박막트랜지스터의제조방법 KR100309934B1 (ko)

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JP32531592 1992-12-04
PCT/JP1993/000849 WO1994000882A1 (en) 1992-06-24 1993-06-23 Thin film transistor, solid-state device, display device, and method for manufacturing thin film transistor

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100623230B1 (ko) * 2003-11-29 2006-09-18 삼성에스디아이 주식회사 박막 트랜지스터의 제조 방법

Families Citing this family (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5953582A (en) * 1993-02-10 1999-09-14 Seiko Epson Corporation Active matrix panel manufacturing method including TFTS having variable impurity concentration levels
DE19500380C2 (de) * 1994-05-20 2001-05-17 Mitsubishi Electric Corp Aktivmatrix-Flüssigkristallanzeige und Herstellungsverfahren dafür
US6133620A (en) 1995-05-26 2000-10-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and process for fabricating the same
JP3403812B2 (ja) * 1994-05-31 2003-05-06 株式会社半導体エネルギー研究所 薄膜トランジスタを用いた半導体装置の作製方法
US5915174A (en) * 1994-09-30 1999-06-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for producing the same
JP3494720B2 (ja) * 1994-11-01 2004-02-09 株式会社半導体エネルギー研究所 半導体装置及びその作製方法、ならびにアクティブマトリクス型の液晶ディスプレー及びイメージセンサー
KR0146899B1 (ko) * 1994-11-28 1998-09-15 김광호 액정 디스플레이 박막트랜지스터소자 및 제조 방법
KR0145900B1 (ko) * 1995-02-11 1998-09-15 김광호 박막 트랜지스터 액정디스플레이 소자 및 그 제조방법
JP3292657B2 (ja) * 1995-04-10 2002-06-17 キヤノン株式会社 薄膜トランジスタ及びそれを用いた液晶表示装置の製造法
US6933182B1 (en) * 1995-04-20 2005-08-23 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device and manufacturing system thereof
KR100218500B1 (ko) * 1995-05-17 1999-09-01 윤종용 실리콘막 및 그 제조 방법과 이를 포함하는 박막트랜지스터 및 그 제조방법
JPH0955499A (ja) * 1995-08-11 1997-02-25 Mitsubishi Electric Corp 半導体装置およびその製造方法
KR100192593B1 (ko) * 1996-02-21 1999-07-01 윤종용 폴리 실리콘 박막 트랜지스터의 제조방법
JP3527009B2 (ja) * 1996-03-21 2004-05-17 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP3525316B2 (ja) * 1996-11-12 2004-05-10 株式会社半導体エネルギー研究所 アクティブマトリクス型表示装置
US6140160A (en) 1997-07-28 2000-10-31 Micron Technology, Inc. Method for fabricating a simplified CMOS polysilicon thin film transistor and resulting structure
KR100269600B1 (ko) * 1997-09-24 2000-10-16 김영환 박막트랜지스터의 제조방법
JPH11112002A (ja) * 1997-10-07 1999-04-23 Semiconductor Energy Lab Co Ltd 半導体装置およびその製造方法
KR19990039940A (ko) * 1997-11-15 1999-06-05 구자홍 박막트랜지스터 제조방법
US6338987B1 (en) 1998-08-27 2002-01-15 Lg.Philips Lcd Co., Ltd. Method for forming polycrystalline silicon layer and method for fabricating thin film transistor
JP4536186B2 (ja) * 1998-11-16 2010-09-01 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6501098B2 (en) * 1998-11-25 2002-12-31 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device
KR20000033832A (ko) * 1998-11-26 2000-06-15 윤종용 액정 표시 장치용 다결정 규소 박막 트랜지스터 기판의 제조 방법
JP4641582B2 (ja) * 1998-12-18 2011-03-02 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6469317B1 (en) 1998-12-18 2002-10-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of fabricating the same
US6576926B1 (en) * 1999-02-23 2003-06-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method thereof
US6674136B1 (en) * 1999-03-04 2004-01-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having driver circuit and pixel section provided over same substrate
US6531713B1 (en) 1999-03-19 2003-03-11 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and manufacturing method thereof
TW444257B (en) * 1999-04-12 2001-07-01 Semiconductor Energy Lab Semiconductor device and method for fabricating the same
KR100333276B1 (ko) * 1999-05-20 2002-04-24 구본준, 론 위라하디락사 액정표시장치의 ｔｆｔ 및 그 제조방법
US7245018B1 (en) * 1999-06-22 2007-07-17 Semiconductor Energy Laboratory Co., Ltd. Wiring material, semiconductor device provided with a wiring using the wiring material and method of manufacturing thereof
TW515109B (en) * 1999-06-28 2002-12-21 Semiconductor Energy Lab EL display device and electronic device
JP2001015553A (ja) * 1999-06-29 2001-01-19 Rohm Co Ltd 半導体装置の製造方法
US6384427B1 (en) * 1999-10-29 2002-05-07 Semiconductor Energy Laboratory Co., Ltd. Electronic device
JP4727029B2 (ja) * 1999-11-29 2011-07-20 株式会社半導体エネルギー研究所 Ｅｌ表示装置、電気器具及びｅｌ表示装置用の半導体素子基板
US7023021B2 (en) 2000-02-22 2006-04-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
US6274465B1 (en) * 2000-03-30 2001-08-14 International Business Machines Corporataion DC electric field assisted anneal
SG100658A1 (en) 2000-03-30 2003-12-26 Ibm Dc or ac electric field business anneal
TWI224806B (en) * 2000-05-12 2004-12-01 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
CN1462481A (zh) * 2001-05-18 2003-12-17 三洋电机株式会社 薄膜晶体管及有源矩阵型显示装置及其制造方法
JP5038560B2 (ja) * 2001-08-01 2012-10-03 ゲットナー・ファンデーション・エルエルシー 電界効果型トランジスタ及びその製造方法並びに該トランジスタを使った液晶表示装置及びその製造方法
JP4256087B2 (ja) * 2001-09-27 2009-04-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6638776B2 (en) * 2002-02-15 2003-10-28 Lsi Logic Corporation Thermal characterization compensation
JP4271413B2 (ja) * 2002-06-28 2009-06-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4211644B2 (ja) * 2004-03-15 2009-01-21 セイコーエプソン株式会社 電気光学装置の製造方法
TWI267213B (en) * 2006-01-27 2006-11-21 Ind Tech Res Inst Organic light emitting device with integrated color filter and method of manufacturing the same
KR20090006198A (ko) * 2006-04-19 2009-01-14 이그니스 이노베이션 인크. 능동형 디스플레이를 위한 안정적 구동 방식
US8896065B2 (en) * 2008-04-14 2014-11-25 Sharp Laboratories Of America, Inc. Top gate thin film transistor with independent field control for off-current suppression
JP5234333B2 (ja) * 2008-05-28 2013-07-10 Ｎｌｔテクノロジー株式会社 ゲート線駆動回路、アクティブマトリクス基板及び液晶表示装置
JP2015065202A (ja) 2013-09-24 2015-04-09 株式会社東芝 半導体素子、表示装置、半導体素子の製造方法及び表示装置の製造方法
KR102324764B1 (ko) * 2014-11-21 2021-11-10 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 제조 방법
US9508860B2 (en) * 2014-12-31 2016-11-29 Shenzhen China Star Optoelectronics Technology Co., Ltd. Lateral gate electrode TFT switch and liquid crystal display device

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58142566A (ja) * 1982-02-19 1983-08-24 Seiko Epson Corp 薄膜半導体装置
US6294796B1 (en) * 1982-04-13 2001-09-25 Seiko Epson Corporation Thin film transistors and active matrices including same
JPS58206121A (ja) * 1982-05-27 1983-12-01 Toshiba Corp 薄膜半導体装置の製造方法
JPH0697694B2 (ja) * 1983-08-25 1994-11-30 セイコーエプソン株式会社 相補型薄膜トランジスタ
JPH0740607B2 (ja) * 1984-10-03 1995-05-01 ソニー株式会社 薄膜トランジスタの製造方法
JPS61104371A (ja) * 1984-10-22 1986-05-22 Sony Corp 誤り率測定方法
JPS61104671A (ja) * 1984-10-29 1986-05-22 Sharp Corp 電界効果トランジスタ
JPS61170724A (ja) * 1985-01-25 1986-08-01 Seiko Instr & Electronics Ltd アクテイブマトリクス表示装置用基板
JPH02246277A (ja) * 1989-03-20 1990-10-02 Matsushita Electron Corp Ｍｏｓトランジスタおよびその製造方法
JPH0783127B2 (ja) * 1989-04-20 1995-09-06 三菱電機株式会社 半導体装置
JP2811786B2 (ja) * 1989-08-22 1998-10-15 セイコーエプソン株式会社 薄膜トランジスタ
JP2979196B2 (ja) * 1990-09-05 1999-11-15 セイコーインスツルメンツ株式会社 光弁用半導体基板装置及びその製造方法
JPH04139764A (ja) * 1990-10-01 1992-05-13 Canon Inc 絶縁ゲート薄膜トランジスタの製造方法
JP2794678B2 (ja) * 1991-08-26 1998-09-10 株式会社 半導体エネルギー研究所 絶縁ゲイト型半導体装置およびその作製方法
JP2650543B2 (ja) * 1991-11-25 1997-09-03 カシオ計算機株式会社 マトリクス回路駆動装置
US5266504A (en) * 1992-03-26 1993-11-30 International Business Machines Corporation Low temperature emitter process for high performance bipolar devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100623230B1 (ko) * 2003-11-29 2006-09-18 삼성에스디아이 주식회사 박막 트랜지스터의 제조 방법

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