DE69205903D1 - Verfahren und Apparatur zur Herstellung eines dünnen Oxidfilmes. - Google Patents

Verfahren und Apparatur zur Herstellung eines dünnen Oxidfilmes.

Info

Publication number
DE69205903D1
DE69205903D1 DE69205903T DE69205903T DE69205903D1 DE 69205903 D1 DE69205903 D1 DE 69205903D1 DE 69205903 T DE69205903 T DE 69205903T DE 69205903 T DE69205903 T DE 69205903T DE 69205903 D1 DE69205903 D1 DE 69205903D1
Authority
DE
Germany
Prior art keywords
producing
oxide film
thin oxide
thin
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69205903T
Other languages
English (en)
Other versions
DE69205903T2 (de
Inventor
Ryusuke Kita
Takashi Hase
Masato Sasaki
Tadataka Morishita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Superconductivity Technology Center
Original Assignee
International Superconductivity Technology Center
Kobe Steel Ltd
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Superconductivity Technology Center, Kobe Steel Ltd, Sharp Corp filed Critical International Superconductivity Technology Center
Publication of DE69205903D1 publication Critical patent/DE69205903D1/de
Application granted granted Critical
Publication of DE69205903T2 publication Critical patent/DE69205903T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/5025—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with ceramic materials
    • C04B41/5027—Oxide ceramics in general; Specific oxide ceramics not covered by C04B41/5029 - C04B41/5051
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/5072—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with oxides or hydroxides not covered by C04B41/5025
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/85—Coating or impregnation with inorganic materials
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/85—Coating or impregnation with inorganic materials
    • C04B41/87—Ceramics
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Metallurgy (AREA)
  • Structural Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
DE69205903T 1991-07-10 1992-07-10 Verfahren und Apparatur zur Herstellung eines dünnen Oxidfilmes. Expired - Lifetime DE69205903T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3169734A JPH0788578B2 (ja) 1991-07-10 1991-07-10 酸化物薄膜の製造方法および装置

Publications (2)

Publication Number Publication Date
DE69205903D1 true DE69205903D1 (de) 1995-12-14
DE69205903T2 DE69205903T2 (de) 1996-05-23

Family

ID=15891862

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69205903T Expired - Lifetime DE69205903T2 (de) 1991-07-10 1992-07-10 Verfahren und Apparatur zur Herstellung eines dünnen Oxidfilmes.

Country Status (4)

Country Link
US (2) US5254363A (de)
EP (1) EP0522866B1 (de)
JP (1) JPH0788578B2 (de)
DE (1) DE69205903T2 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6036877A (en) * 1991-06-27 2000-03-14 Applied Materials, Inc. Plasma reactor with heated source of a polymer-hardening precursor material
JPH0897147A (ja) * 1994-09-29 1996-04-12 Mitsubishi Electric Corp エピタキシャル結晶成長装置
JP3137880B2 (ja) * 1995-08-25 2001-02-26 ティーディーケイ株式会社 強誘電体薄膜、電子デバイスおよび強誘電体薄膜の製造方法
US5891251A (en) * 1996-08-07 1999-04-06 Macleish; Joseph H. CVD reactor having heated process chamber within isolation chamber
JP4036452B2 (ja) * 2003-04-18 2008-01-23 日本テトラパック株式会社 包装積層材料の製造方法
US20080160754A1 (en) * 2006-12-27 2008-07-03 International Business Machines Corporation Method for fabricating a microelectronic conductor structure
ATE556160T1 (de) * 2009-06-18 2012-05-15 Riber Vorrichtung zur abscheidung einer dünnschicht aus einem material auf einem substrat und regenerationsverfahren für eine solche vorrichtung
RU194662U1 (ru) * 2019-08-02 2019-12-18 Федеральное государственное бюджетное образовательное учреждение высшего образования "Саратовский государственный технический университет имени Гагарина Ю.А." (СГТУ имени Гагарина Ю.А.) Устройство для газотермического оксидирования металлических изделий
RU194657U1 (ru) * 2019-08-14 2019-12-18 Федеральное государственное бюджетное образовательное учреждение высшего образования "Саратовский государственный технический университет имени Гагарина Ю.А." (СГТУ имени Гагарина Ю.А.) Устройство для газотермического оксидирования изделий из титана и титаносодержащих сплавов
US11545347B2 (en) * 2020-11-05 2023-01-03 Applied Materials, Inc. Internally divisible process chamber using a shutter disk assembly

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2129643A1 (de) * 1970-06-24 1972-03-16 Cockerill Verfahren zur Behandlung von Aluminiumueberzuegen
US4060448A (en) * 1977-01-28 1977-11-29 Allied Chemical Corporation Yttrium iron garnet disks on gadolinium gallium substrates for microwave applications
JPS58111127A (ja) * 1981-12-24 1983-07-02 Ulvac Corp 耐摩耗性磁気記録体の製造法
US4763602A (en) * 1987-02-25 1988-08-16 Glasstech Solar, Inc. Thin film deposition apparatus including a vacuum transport mechanism
US5204318A (en) * 1987-03-27 1993-04-20 Massachusetts Institute Of Technology Preparation of superconducting oxides and oxide-metal composites
JPS63259070A (ja) * 1987-04-14 1988-10-26 Sharp Corp 金属酸化物薄膜作成方法
KR910007382B1 (ko) * 1987-08-07 1991-09-25 가부시기가이샤 히다찌세이사꾸쇼 초전도 재료 및 초전도 박막의 제조방법
JPS6472418A (en) * 1987-09-11 1989-03-17 Mitsubishi Electric Corp Manufacture of oxide superconducting thin film
JPH03218906A (ja) * 1990-01-23 1991-09-26 Fujitsu Ltd 酸化物超伝導薄膜形成装置及びその装置を用いた酸化物超伝導薄膜形成方法

Also Published As

Publication number Publication date
EP0522866B1 (de) 1995-11-08
US5421890A (en) 1995-06-06
JPH0517877A (ja) 1993-01-26
EP0522866A1 (de) 1993-01-13
JPH0788578B2 (ja) 1995-09-27
DE69205903T2 (de) 1996-05-23
US5254363A (en) 1993-10-19

Similar Documents

Publication Publication Date Title
DE69423991D1 (de) Verfahren zur Herstellung eines Siliciumoxidfilmes
DE69326123D1 (de) Dünnfilmtransistor und verfahren zur herstellung eines dünnfilmtransistors
DE69430230T2 (de) Verfahren und Vorrichtung zur Herstellung eines Einkristallinen dünnen Films
AT400291B (de) Verfahren zur herstellung eines flüssigen produktes und vorrichtung zur durchführung desselben
DE3782683T2 (de) Verfahren zur herstellung eines duennfilmtransistors.
DE69324633T2 (de) Verfahren zur Herstellung eines einkristallinen Dünnfilmes
DE69305318T2 (de) Verfahren zur Herstellung eines Siliziumoxid-Filmes
DE59104621D1 (de) Verfahren und Einrichtung zur Herstellung eines Wickels.
DE68921319T2 (de) Verfahren und Apparatur zur Herstellung dünner Polyimid-Filme.
DE68920417D1 (de) Verfahren zur Herstellung eines kohlenstoffhaltigen Films.
DE69018717D1 (de) Verfahren zur Herstellung eines Polyimidfilms.
DE69112791T2 (de) Verfahren und Vorrichtung zur Herstellung eines Bandes.
DE69133487D1 (de) Verfahren zur Herstellung eines dünnen metallischen Films
DE69418549T2 (de) Verfahren zur Herstellung eines Partikelnfilmes
DE69204538T2 (de) Verfahren zur Herstellung eines Beschichtungsfilms.
DE69205903T2 (de) Verfahren und Apparatur zur Herstellung eines dünnen Oxidfilmes.
DE69318380T2 (de) Verfahren zur Herstellung eines Orientierungsfilmes
DE3864056D1 (de) Verfahren zur herstellung eines supraleitenden duennen films und vorrichtung hierfuer.
DE68907209D1 (de) Verfahren zur herstellung eines supraleitfaehigen duennfilmes.
DE68924882D1 (de) Verfahren zur Herstellung eines photohärtbaren Films.
DE69006499D1 (de) Kamera und verfahren zur herstellung und projektion eines 3-d-filmbildes.
DE3585048D1 (de) Verfahren und vorrichtung zur herstellung eines duennfilmes.
DE69007321D1 (de) Verfahren zur Herstellung eines Films.
DE69103072D1 (de) Verfahren zur Herstellung eines funktionellen Dünnfilms.
DE3875957D1 (de) Verfahren und vorrichtung zur herstellung eines duennen organischen films.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: SHARP K.K., OSAKA, JP INTERNATIONAL SUPERCONDUCTIV

8328 Change in the person/name/address of the agent

Free format text: PATENTANWAELTE MUELLER & HOFFMANN, 81667 MUENCHEN

8327 Change in the person/name/address of the patent owner

Owner name: INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER,

Owner name: NEW ENERGY AND INDUATRIAL TECHNOLOGY DEVELOPMENT O

8327 Change in the person/name/address of the patent owner

Owner name: INTERNATIONAL SUPERCONDUCTIVITY TECHNOLOGY CENTER,

R071 Expiry of right

Ref document number: 522866

Country of ref document: EP