DE60128489D1 - Von hinten beleuchtete bildaufnahmevorrichtung mit erhöhter empfindlichkeit vom uv bis nah-ir-bereich - Google Patents

Von hinten beleuchtete bildaufnahmevorrichtung mit erhöhter empfindlichkeit vom uv bis nah-ir-bereich

Info

Publication number
DE60128489D1
DE60128489D1 DE60128489T DE60128489T DE60128489D1 DE 60128489 D1 DE60128489 D1 DE 60128489D1 DE 60128489 T DE60128489 T DE 60128489T DE 60128489 T DE60128489 T DE 60128489T DE 60128489 D1 DE60128489 D1 DE 60128489D1
Authority
DE
Germany
Prior art keywords
layer
array
range
image recording
increased sensitivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60128489T
Other languages
English (en)
Other versions
DE60128489T2 (de
Inventor
Kalluri R Sarma
Charles S Chanley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell International Inc
Original Assignee
Honeywell International Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell International Inc filed Critical Honeywell International Inc
Application granted granted Critical
Publication of DE60128489D1 publication Critical patent/DE60128489D1/de
Publication of DE60128489T2 publication Critical patent/DE60128489T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14687—Wafer level processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1464—Back illuminated imager structures

Landscapes

  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Investigating Or Analysing Materials By The Use Of Chemical Reactions (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
  • Manufacture Or Reproduction Of Printing Formes (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Materials For Photolithography (AREA)
DE60128489T 2001-01-02 2001-12-20 Von hinten beleuchtete bildaufnahmevorrichtung mit erhöhter empfindlichkeit vom uv bis nah-ir-bereich Expired - Lifetime DE60128489T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US753530 2001-01-02
US09/753,530 US6498073B2 (en) 2001-01-02 2001-01-02 Back illuminated imager with enhanced UV to near IR sensitivity
PCT/US2001/050086 WO2002058153A2 (en) 2001-01-02 2001-12-20 Back illuminated imager with enhanced uv to near ir sensitivity

Publications (2)

Publication Number Publication Date
DE60128489D1 true DE60128489D1 (de) 2007-06-28
DE60128489T2 DE60128489T2 (de) 2008-02-07

Family

ID=25031023

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60128489T Expired - Lifetime DE60128489T2 (de) 2001-01-02 2001-12-20 Von hinten beleuchtete bildaufnahmevorrichtung mit erhöhter empfindlichkeit vom uv bis nah-ir-bereich

Country Status (9)

Country Link
US (1) US6498073B2 (de)
EP (1) EP1356522B1 (de)
JP (1) JP2004531877A (de)
AT (1) ATE362657T1 (de)
AU (1) AU2002245175A1 (de)
CA (1) CA2434252A1 (de)
DE (1) DE60128489T2 (de)
TW (1) TW526525B (de)
WO (1) WO2002058153A2 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10042947A1 (de) * 2000-08-31 2002-03-21 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement auf GaN-Basis
US20040140474A1 (en) * 2002-06-25 2004-07-22 Matsushita Electric Industrial Co., Ltd. Semiconductor light-emitting device, method for fabricating the same and method for bonding the same
WO2004054001A2 (en) * 2002-12-09 2004-06-24 Quantum Semiconductor Llc Cmos image sensor
JP4046067B2 (ja) 2003-11-04 2008-02-13 ソニー株式会社 固体撮像素子の製造方法
JP2005259828A (ja) * 2004-03-10 2005-09-22 Sony Corp 固体撮像素子及びその製造方法
US7060592B2 (en) * 2004-09-15 2006-06-13 United Microelectronics Corp. Image sensor and fabricating method thereof
US7425460B2 (en) * 2004-09-17 2008-09-16 California Institute Of Technology Method for implementation of back-illuminated CMOS or CCD imagers
US7723215B2 (en) * 2005-02-11 2010-05-25 Sarnoff Corporation Dark current reduction in back-illuminated imaging sensors and method of fabricating same
US7238583B2 (en) * 2005-02-11 2007-07-03 Sarnoff Corporation Back-illuminated imaging device and method of fabricating same
WO2007059283A2 (en) 2005-11-15 2007-05-24 California Institute Of Technology Back-illuminated imager and method for making electrical and optical connections to same
US7586139B2 (en) 2006-02-17 2009-09-08 International Business Machines Corporation Photo-sensor and pixel array with backside illumination and method of forming the photo-sensor
US20080044984A1 (en) * 2006-08-16 2008-02-21 Taiwan Semiconductor Manufacturing Co., Ltd. Methods of avoiding wafer breakage during manufacture of backside illuminated image sensors
KR101447044B1 (ko) * 2006-10-31 2014-10-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치
JP5250236B2 (ja) * 2006-10-31 2013-07-31 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
WO2008118525A1 (en) * 2007-03-27 2008-10-02 Sarnoff Corporation Method of fabricating back-illuminated imaging sensors
WO2009146256A1 (en) * 2008-05-30 2009-12-03 Sarnoff Corporation High-efficiency thinned imager with reduced boron updiffusion
JP2011522415A (ja) * 2008-05-30 2011-07-28 サーノフ コーポレーション Ｕｔｓｏｉウェーハ上に製作された背面照射型撮像装置の背面を電子的にピン止めする方法
TWI440169B (zh) * 2009-08-31 2014-06-01 Sumco Corp 固態攝影元件用半導體晶圓的薄膜化控制方法
JP2010118675A (ja) * 2010-01-12 2010-05-27 Sony Corp 固体撮像素子及びその製造方法
US20110269295A1 (en) * 2010-04-30 2011-11-03 Hopper Peter J Method of Forming a Semiconductor Wafer that Provides Galvanic Isolation
JP2010258463A (ja) * 2010-06-18 2010-11-11 Sony Corp 固体撮像素子の製造方法
JP5218502B2 (ja) * 2010-08-30 2013-06-26 ソニー株式会社 固体撮像装置の製造方法
US8975668B2 (en) 2011-10-28 2015-03-10 Intevac, Inc. Backside-thinned image sensor using Al2 O3 surface passivation
US11069560B2 (en) * 2016-11-01 2021-07-20 Shin-Etsu Chemical Co., Ltd. Method of transferring device layer to transfer substrate and highly thermal conductive substrate

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4656519A (en) 1985-10-04 1987-04-07 Rca Corporation Back-illuminated CCD imagers of interline transfer type
US5395788A (en) * 1991-03-15 1995-03-07 Shin Etsu Handotai Co., Ltd. Method of producing semiconductor substrate
US5227313A (en) 1992-07-24 1993-07-13 Eastman Kodak Company Process for making backside illuminated image sensors
US5276345A (en) * 1992-10-30 1994-01-04 California Institute Of Technology Composite GaAs-on-quartz substrate for integration of millimeter-wave passive and active device circuitry
US5270221A (en) 1992-11-05 1993-12-14 Hughes Aircraft Company Method of fabricating high quantum efficiency solid state sensors
US5426072A (en) * 1993-01-21 1995-06-20 Hughes Aircraft Company Process of manufacturing a three dimensional integrated circuit from stacked SOI wafers using a temporary silicon substrate
US5391257A (en) * 1993-12-10 1995-02-21 Rockwell International Corporation Method of transferring a thin film to an alternate substrate
WO1995018463A1 (en) * 1993-12-30 1995-07-06 Honeywell Inc. Single crystal silicon on quartz
WO1995023348A1 (en) * 1994-02-25 1995-08-31 Massachusetts Institute Of Technology Methods and apparatus for detecting and imaging particles
JP3542376B2 (ja) * 1994-04-08 2004-07-14 キヤノン株式会社 半導体基板の製造方法
FR2725074B1 (fr) * 1994-09-22 1996-12-20 Commissariat Energie Atomique Procede de fabrication d'une structure comportant une couche mince semi-conductrice sur un substrat
US5754228A (en) 1995-09-25 1998-05-19 Lockhead Martin Corporation Rapid-sequence full-frame CCD sensor
AU5354698A (en) 1996-11-01 1998-05-29 Lawrence Berkeley Laboratory Low-resistivity photon-transparent window attached to photo-sensitive silicon detector
US6214733B1 (en) * 1999-11-17 2001-04-10 Elo Technologies, Inc. Process for lift off and handling of thin film materials
US6287891B1 (en) * 2000-04-05 2001-09-11 Hrl Laboratories, Llc Method for transferring semiconductor device layers to different substrates

Also Published As

Publication number Publication date
ATE362657T1 (de) 2007-06-15
US20020084474A1 (en) 2002-07-04
AU2002245175A1 (en) 2002-07-30
JP2004531877A (ja) 2004-10-14
US6498073B2 (en) 2002-12-24
EP1356522B1 (de) 2007-05-16
WO2002058153A2 (en) 2002-07-25
CA2434252A1 (en) 2002-07-25
DE60128489T2 (de) 2008-02-07
TW526525B (en) 2003-04-01
EP1356522A2 (de) 2003-10-29
WO2002058153A9 (en) 2003-09-18
WO2002058153A3 (en) 2003-05-01

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