WO2004055917A3 - Manufacture of thin film transistors - Google Patents

Manufacture of thin film transistors Download PDF

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Publication number
WO2004055917A3
WO2004055917A3 PCT/IB2003/005512 IB0305512W WO2004055917A3 WO 2004055917 A3 WO2004055917 A3 WO 2004055917A3 IB 0305512 W IB0305512 W IB 0305512W WO 2004055917 A3 WO2004055917 A3 WO 2004055917A3
Authority
WO
WIPO (PCT)
Prior art keywords
layer
photopolymer
areas
photomask
opaque
Prior art date
Application number
PCT/IB2003/005512
Other languages
French (fr)
Other versions
WO2004055917A2 (en
Inventor
Jeffrey A Chapman
Sung-Il Park
Original Assignee
Koninkl Philips Electronics Nv
Jeffrey A Chapman
Sung-Il Park
Lg Philips Lcd Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv, Jeffrey A Chapman, Sung-Il Park, Lg Philips Lcd Co Ltd filed Critical Koninkl Philips Electronics Nv
Priority to AU2003279485A priority Critical patent/AU2003279485A1/en
Publication of WO2004055917A2 publication Critical patent/WO2004055917A2/en
Publication of WO2004055917A3 publication Critical patent/WO2004055917A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
    • G02F1/136236—Active matrix addressed cells for reducing the number of lithographic steps using a grey or half tone lithographic process
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P80/00—Climate change mitigation technologies for sector-wide applications
    • Y02P80/30—Reducing waste in manufacturing processes; Calculations of released waste quantities

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)

Abstract

A method of manufacturing a thin film transistor (TFT), comprises a photolithography step, wherein a photopolymer 7 is applied over a metalisation layer 6 and exposed to light through a photomask 8. The photomask 8 is a transparent substrate 9 with one surface partially covered to form transparent 12a, 12b, half-tone 11 and opaque 10a, 10b areas. In order to reduce diffraction effects, half-tone areas 11 are formed using a periodic pattern of opaque and transparent areas, e.g. a checkerboard, grid or parallel lines. The exposed photopolymer is removed, leaving an indented layer of photopolymer 7 and partially uncovering the metalisation layer 6. Following etching of the uncovered metalisation layer 6, the remaining photopolymer layer 7 may be thinned, exposing further portions of the metalisation layer 6 for etching. The photomask 8 may be configured so that a half-tone area is used to define a channel and opaque areas correspond to the positions of source and drain terminals.
PCT/IB2003/005512 2002-12-14 2003-11-28 Manufacture of thin film transistors WO2004055917A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2003279485A AU2003279485A1 (en) 2002-12-14 2003-11-28 Manufacture of thin film transistors

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB0229220.9A GB0229220D0 (en) 2002-12-14 2002-12-14 Manufacture of thin film transistors
GB0229220.9 2002-12-14

Publications (2)

Publication Number Publication Date
WO2004055917A2 WO2004055917A2 (en) 2004-07-01
WO2004055917A3 true WO2004055917A3 (en) 2004-09-02

Family

ID=9949718

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2003/005512 WO2004055917A2 (en) 2002-12-14 2003-11-28 Manufacture of thin film transistors

Country Status (4)

Country Link
AU (1) AU2003279485A1 (en)
GB (1) GB0229220D0 (en)
TW (1) TW200503277A (en)
WO (1) WO2004055917A2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7256922B2 (en) * 2004-07-02 2007-08-14 Idc, Llc Interferometric modulators with thin film transistors
CN105140131A (en) * 2015-07-15 2015-12-09 京东方科技集团股份有限公司 Preparation method of oxide film transistor

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5130829A (en) * 1990-06-27 1992-07-14 U.S. Philips Corporation Active matrix liquid crystal display devices having a metal light shield for each switching device electrically connected to an adjacent row address conductor
US6268091B1 (en) * 1998-01-08 2001-07-31 Micron Subresolution grating for attenuated phase shifting mask fabrication
US20020018176A1 (en) * 2000-03-15 2002-02-14 Advanced Display Inc. Liquid crystal display
US20020054247A1 (en) * 2000-11-07 2002-05-09 Lg.Philips Lcd Co., Ltd. Method for fabricating an array substrate of a liquid crystal display device
US20020127857A1 (en) * 2001-03-08 2002-09-12 Hiroyuki Ohgami Active matrix substrate and method for producing the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5130829A (en) * 1990-06-27 1992-07-14 U.S. Philips Corporation Active matrix liquid crystal display devices having a metal light shield for each switching device electrically connected to an adjacent row address conductor
US6268091B1 (en) * 1998-01-08 2001-07-31 Micron Subresolution grating for attenuated phase shifting mask fabrication
US20020018176A1 (en) * 2000-03-15 2002-02-14 Advanced Display Inc. Liquid crystal display
US20020054247A1 (en) * 2000-11-07 2002-05-09 Lg.Philips Lcd Co., Ltd. Method for fabricating an array substrate of a liquid crystal display device
US20020127857A1 (en) * 2001-03-08 2002-09-12 Hiroyuki Ohgami Active matrix substrate and method for producing the same

Also Published As

Publication number Publication date
TW200503277A (en) 2005-01-16
GB0229220D0 (en) 2003-01-22
WO2004055917A2 (en) 2004-07-01
AU2003279485A8 (en) 2004-07-09
AU2003279485A1 (en) 2004-07-09

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