KR970028753A - Manufacturing method of liquid crystal display element - Google Patents

Manufacturing method of liquid crystal display element Download PDF

Info

Publication number
KR970028753A
KR970028753A KR1019950042293A KR19950042293A KR970028753A KR 970028753 A KR970028753 A KR 970028753A KR 1019950042293 A KR1019950042293 A KR 1019950042293A KR 19950042293 A KR19950042293 A KR 19950042293A KR 970028753 A KR970028753 A KR 970028753A
Authority
KR
South Korea
Prior art keywords
layer
liquid crystal
crystal display
electrode
display device
Prior art date
Application number
KR1019950042293A
Other languages
Korean (ko)
Other versions
KR0171980B1 (en
Inventor
김재민
최교운
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950042293A priority Critical patent/KR0171980B1/en
Publication of KR970028753A publication Critical patent/KR970028753A/en
Application granted granted Critical
Publication of KR0171980B1 publication Critical patent/KR0171980B1/en

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Nonlinear Science (AREA)
  • Computer Hardware Design (AREA)
  • Liquid Crystal (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Ceramic Engineering (AREA)
  • Thin Film Transistor (AREA)

Abstract

본 발명은 액정 표시 소자의 제조 방법에 관한 것으로, 보다 구체적으로는 액정 표시 소자를 제조하기 위한 공정 스텝을 감소시킬 수 있는 액정 표시 소자의 제조 방법에 관한 것으로, 본 발명의 방법은 절연 기판상에 게이트 전극을 형성하는 단계; 상기 소자 전면에 게이트 절연막, 비정질 실리콘층, 도핑된 반도체층을 순차적으로 증착하는 단계; 상기 비정질 실리콘층과 도핑된 반도체층을 소정의 형태로 패턴화하는 단계; 상기 전체 구조 상부에 ITO층과 금속층을 순차적으로 형성하는 단계; 상기 ITO층과 금속층을 소오스 전극과 드레인 전극 및 화소 전극의 형태로 식각하는 단계; 전체 구조 상부에 보호막을 형성하는 단계; 상기 보호막과 금속층의 소정 부분을 화소 전극 영역의 ITO 전극을 노출되도록 식각하는 단계를 포함한다. 이에 따르면 기존의 일곱개의 마스크 패턴에 의해 형성하는 액정 표시 장치의 박막 트랜지스터 및 화소 전극을 네개의 마스크 패턴막을 이용하여 액정 표시 장치의 박막 트랜지스터 및 화소 전극을 형성하므로써, 공정이 간소화되고, 이로 인하여 제조 공기 단축 및 원가 절감의 효과를 얻을 수 있다.BACKGROUND OF THE INVENTION Field of the Invention The present invention relates to a method for manufacturing a liquid crystal display device, and more particularly, to a method for manufacturing a liquid crystal display device capable of reducing process steps for manufacturing a liquid crystal display device. Forming a gate electrode; Sequentially depositing a gate insulating film, an amorphous silicon layer, and a doped semiconductor layer on the entire surface of the device; Patterning the amorphous silicon layer and the doped semiconductor layer into a predetermined shape; Sequentially forming an ITO layer and a metal layer on the entire structure; Etching the ITO layer and the metal layer in the form of a source electrode, a drain electrode, and a pixel electrode; Forming a protective film on the entire structure; Etching a portion of the passivation layer and the metal layer to expose the ITO electrode in the pixel electrode region. According to this, the thin film transistor and the pixel electrode of the liquid crystal display device formed by the seven mask patterns according to the conventional method are formed by using the four mask pattern films to form the thin film transistor and the pixel electrode of the liquid crystal display device, thereby simplifying the manufacturing process. It can reduce the air and cost.

Description

액정 표시 소자의 제조 방법Manufacturing method of liquid crystal display element

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2도 (a) 내지 (h)는 본 발명의 일 실시예에 따른 액정 표시소자의 제조 방법을 설명하기 위한 도면.2 (a) to (h) are views for explaining a method of manufacturing a liquid crystal display device according to an embodiment of the present invention.

Claims (4)

절연 기판상에 게이트 전극을 형성하는 단계; 상기 소자 전면에 게이트 절연막, 비정질 실리콘층, 도핑된 반도체층을 순차적으로 증착하는 단계; 상기 비정질 실리콘층과 도핑된 반도체층을 소정의 형태로 패턴화하는 단계; 상기 전체 구조 상부에 ITO층과 금속층을 순차적으로 형성하는 단계; 상기 ITO층과 금속층을 소오스 전극과 드레인 전극과 드레인 전극 및 화소 전극의 형태로 식각하는 단계; 전체 구조 상부에 보호막을 형성하는 단계; 및 상기 보호막과 금속층의 소정 부분을 화소 전극 영역의 ITO 전극을 노출되도록 식각하는 단계를 포함하는 것을 특징으로 하는 액정 표시의 제조 방법.Forming a gate electrode on the insulating substrate; Sequentially depositing a gate insulating film, an amorphous silicon layer, and a doped semiconductor layer on the entire surface of the device; Patterning the amorphous silicon layer and the doped semiconductor layer into a predetermined shape; Sequentially forming an ITO layer and a metal layer on the entire structure; Etching the ITO layer and the metal layer in the form of a source electrode, a drain electrode, a drain electrode, and a pixel electrode; Forming a protective film on the entire structure; And etching a predetermined portion of the passivation layer and the metal layer to expose the ITO electrode in the pixel electrode area. 제1항에 있어서, 상기 소오스, 드레인 전극인 ITO전극과 금속층의 이중층으로 구성 되는 것을 특징으로 하는 액정 표시 소자의 제조방법.The method for manufacturing a liquid crystal display device according to claim 1, comprising a double layer of an ITO electrode and a metal layer, which are the source and drain electrodes. 제1항 또는 제2항에 있어서, 상기 금속층은 알루미늄 금속층인 것을 특징으로 하는 액정 표시 소자의 제조 방법.The method of manufacturing a liquid crystal display device according to claim 1 or 2, wherein the metal layer is an aluminum metal layer. 제1항에 있어서, 상기 게이트 전극은 알루미늄으로 형성하는 것을 특징으로 하는 액정 표시 소자의 제조방법.The method of claim 1, wherein the gate electrode is made of aluminum. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950042293A 1995-11-20 1995-11-20 Method for manufacturing liquid crystal display element KR0171980B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950042293A KR0171980B1 (en) 1995-11-20 1995-11-20 Method for manufacturing liquid crystal display element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950042293A KR0171980B1 (en) 1995-11-20 1995-11-20 Method for manufacturing liquid crystal display element

Publications (2)

Publication Number Publication Date
KR970028753A true KR970028753A (en) 1997-06-24
KR0171980B1 KR0171980B1 (en) 1999-03-20

Family

ID=19434736

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950042293A KR0171980B1 (en) 1995-11-20 1995-11-20 Method for manufacturing liquid crystal display element

Country Status (1)

Country Link
KR (1) KR0171980B1 (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000037842A (en) * 1998-12-02 2000-07-05 윤종용 Method for manufacturing thin film transistors
KR100309921B1 (en) * 1998-11-27 2002-10-25 삼성전자 주식회사 Liquid crystal display and a manufacturing method thereof
KR100315914B1 (en) * 1998-12-12 2002-12-26 삼성전자 주식회사 Manufacturing method of thin film transistor substrate for liquid crystal display device using four masks and thin film transistor substrate for liquid crystal display device
KR100336881B1 (en) * 1998-06-26 2003-01-15 주식회사 현대 디스플레이 테크놀로지 Manufacturing Method of Thin Film Transistor Liquid Crystal Display Device
US6649934B2 (en) 1998-12-12 2003-11-18 Samsung Electronics Co., Ltd. Thin film transistor array panel for a liquid crystal display and methods for manufacturing the same
KR100653466B1 (en) * 1997-12-08 2007-02-05 비오이 하이디스 테크놀로지 주식회사 Manufacturing method of liquid crystal display device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101219046B1 (en) 2005-11-17 2013-01-08 삼성디스플레이 주식회사 Display device and manufacturing method thereof
JP2008010440A (en) * 2006-06-27 2008-01-17 Mitsubishi Electric Corp Active matrix tft array substrate, and manufacturing method thereof

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100653466B1 (en) * 1997-12-08 2007-02-05 비오이 하이디스 테크놀로지 주식회사 Manufacturing method of liquid crystal display device
KR100336881B1 (en) * 1998-06-26 2003-01-15 주식회사 현대 디스플레이 테크놀로지 Manufacturing Method of Thin Film Transistor Liquid Crystal Display Device
KR100309921B1 (en) * 1998-11-27 2002-10-25 삼성전자 주식회사 Liquid crystal display and a manufacturing method thereof
KR20000037842A (en) * 1998-12-02 2000-07-05 윤종용 Method for manufacturing thin film transistors
KR100315914B1 (en) * 1998-12-12 2002-12-26 삼성전자 주식회사 Manufacturing method of thin film transistor substrate for liquid crystal display device using four masks and thin film transistor substrate for liquid crystal display device
US6649934B2 (en) 1998-12-12 2003-11-18 Samsung Electronics Co., Ltd. Thin film transistor array panel for a liquid crystal display and methods for manufacturing the same

Also Published As

Publication number Publication date
KR0171980B1 (en) 1999-03-20

Similar Documents

Publication Publication Date Title
KR970048718A (en) Manufacturing method of liquid crystal display device
KR960042172A (en) LCD and its manufacturing method
KR970053623A (en) Thin film transistor substrate for liquid crystal display device and manufacturing method thereof
KR970030921A (en) Manufacturing method of thin film transistor substrate for liquid crystal display device
KR970022414A (en) Manufacturing method of liquid crystal display device
KR970028753A (en) Manufacturing method of liquid crystal display element
KR960029855A (en) Thin film transistor liquid crystal display device and manufacturing method thereof
KR970076042A (en) Liquid Crystal Display and Manufacturing Method
KR970048849A (en) Manufacturing Method of Liquid Crystal Display
KR970023624A (en) Manufacturing method of thin film transistor substrate for liquid crystal display device
KR970054502A (en) Vertical thin film transistor and its manufacturing method, and pixel array for ultra thin liquid crystal display device using same
KR19990046897A (en) Thin film transistor and method of manufacturing same
KR970075984A (en) A method of manufacturing an active matrix substrate and an active matrix substrate
KR970054490A (en) Manufacturing Method of Thin Film Transistor Liquid Crystal Display
KR950004584A (en) Manufacturing method of polycrystalline silicon thin film transistor with offset structure
KR970022415A (en) Manufacturing method of liquid crystal display device
KR970048854A (en) Manufacturing method of liquid crystal display device
KR950033616A (en) Liquid crystal display device manufacturing method
KR960043292A (en) Manufacturing method of thin film transistor panel for liquid crystal display device
KR940015621A (en) LCD panel manufacturing method and electrode pad structure
KR970054520A (en) Method of manufacturing thin film transistor of liquid crystal display device
KR970054476A (en) Manufacturing method of thin film transistor substrate for liquid crystal display device
KR960019777A (en) Thin film transistor for liquid crystal display device and manufacturing method thereof
KR970048842A (en) Manufacturing Method of Thin Film Transistor Liquid Crystal Display
KR950012756A (en) Manufacturing method of thin film transistor for liquid crystal display device

Legal Events

Date Code Title Description
A201 Request for examination
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20120906

Year of fee payment: 15

FPAY Annual fee payment

Payment date: 20130911

Year of fee payment: 16

FPAY Annual fee payment

Payment date: 20140919

Year of fee payment: 17

FPAY Annual fee payment

Payment date: 20150918

Year of fee payment: 18

EXPY Expiration of term