KR970075984A - A method of manufacturing an active matrix substrate and an active matrix substrate - Google Patents

A method of manufacturing an active matrix substrate and an active matrix substrate Download PDF

Info

Publication number
KR970075984A
KR970075984A KR1019960017119A KR19960017119A KR970075984A KR 970075984 A KR970075984 A KR 970075984A KR 1019960017119 A KR1019960017119 A KR 1019960017119A KR 19960017119 A KR19960017119 A KR 19960017119A KR 970075984 A KR970075984 A KR 970075984A
Authority
KR
South Korea
Prior art keywords
metal layer
semiconductor layer
layer
substrate
active matrix
Prior art date
Application number
KR1019960017119A
Other languages
Korean (ko)
Other versions
KR100205867B1 (en
Inventor
류기현
Original Assignee
구자홍
Lg 전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 구자홍, Lg 전자주식회사 filed Critical 구자홍
Priority to KR1019960017119A priority Critical patent/KR100205867B1/en
Publication of KR970075984A publication Critical patent/KR970075984A/en
Application granted granted Critical
Publication of KR100205867B1 publication Critical patent/KR100205867B1/en

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps

Abstract

본 발명은 액정표시장치 등에 쓰이는 액티브매트릭스기판의 제조방법 및 그 방법에 의해 제조되는 액티브매트릭스기판에 관한 것으로, 화소전극을 마스크로하여 소스전극과 드레인전극을 형성하여 마스크형성 및 그에 의한 패턴형성의 수를 줄이고, 화소전극 상에 폴리이미드 막을 형성하고 폴리이미드막 상의 소정의 영역에 블랙레진막을 형성하여 양호한 배향상태를 갖는 액티브매트릭스기판을 완성한다.The present invention relates to a method of manufacturing an active matrix substrate used for a liquid crystal display device or the like, and an active matrix substrate manufactured by the method, and a method of forming a source electrode and a drain electrode using the pixel electrode as a mask, Thereby forming a polyimide film on the pixel electrode and forming a black resin film in a predetermined region on the polyimide film to complete an active matrix substrate having a good alignment state.

Description

액티브매트릭스기판의 제조방법 및 그 방법에 의해 제조되는 액티브매트릭스기판A method of manufacturing an active matrix substrate and an active matrix substrate

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제3도는 본 발명의 실시예에 따른 액티브매트릭스기판의 제조공정도이다.FIG. 3 is a manufacturing process diagram of an active matrix substrate according to an embodiment of the present invention.

Claims (2)

기판 상에 제1금속층을 증착한 후 패터닝하여 게이트전극 및 게이트버스배선을 형성하는 단계와; 상기 게이트전극 및 상기 게이트버스배선과 상기 기판 상에 게이트절연막, 반도체층, 불순물 반도체층, 제2금속층을 연속증착하는 단계와; 상기 게이트절연막, 상기 반도체층, 상기 불순물 반도체층 및 상기 제2금속층을 차례로 에칭하여 소정의 패턴을 형성하는 단계와; 상기 제2금속층 및 상기 기판 상에 투명금속층을 증착하는 단계와; 상기 투명금속층을 선택적으로 에칭하는 단계와; 상기 선택적으로 에칭된 투명금속층을 마스크로하여 제2금속층과 상기 불순물 반도체층을 에칭하여 소스 및 드레인전극을 형성하는 단계와; 상기 투명금속층 및 상기 반도체층 상에 폴리이미드막을 형성하는 단계와; 상기 폴리이미드막 상의 소정의 영역에 블랙레진막을 형성하는 단계를 포함하여 이루어지는 액티브매트릭스기판의 제조방법.Depositing and patterning a first metal layer on the substrate to form a gate electrode and a gate bus line; Sequentially depositing a gate insulating layer, a semiconductor layer, an impurity semiconductor layer, and a second metal layer on the gate electrode and the gate bus line and the substrate; Etching the gate insulating film, the semiconductor layer, the impurity semiconductor layer, and the second metal layer in order to form a predetermined pattern; Depositing a transparent metal layer on the second metal layer and the substrate; Selectively etching the transparent metal layer; Etching the second metal layer and the impurity semiconductor layer using the selectively etched transparent metal layer as a mask to form source and drain electrodes; Forming a polyimide film on the transparent metal layer and the semiconductor layer; And forming a black resin film on a predetermined region on the polyimide film. 기판과; 상기 기판상에 형성되어 게이트버스배선 및 게이트전극을 이루는 제1금속층과; 상기 제1금속층과 상기 기판 상에 형성된 게이트절연층과; 상기 게이트절연층 상에 형성된 반도체층과; 상기 반도체층 상에 형성된 불순물 반도체층과; 상기 불순물 반도체층 상에 형성되어 소스전극 및 소스버스배선과 드레인전극을 이루는 제2금속층과; 상기 제2금속층 및 상기 기판 상의 소정의 영역에 형성된 투명금속층과; 상기 투명금속층과 상기 반도체층 상에 형성된 폴리이미드막과; 상기 폴리이미드막 상의 소정의 영역에 형성된 차광막으로 이루어진 액티브매트릭스기판.Claims [1] A first metal layer formed on the substrate and constituting a gate bus line and a gate electrode; A gate insulation layer formed on the first metal layer and the substrate; A semiconductor layer formed on the gate insulating layer; An impurity semiconductor layer formed on the semiconductor layer; A second metal layer formed on the impurity semiconductor layer and constituting a source electrode and a source bus wiring and a drain electrode; A transparent metal layer formed on the second metal layer and a predetermined region on the substrate; A transparent metal layer and a polyimide film formed on the semiconductor layer; And a light-shielding film formed on a predetermined region of the polyimide film. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is disclosed by the contents of the first application.
KR1019960017119A 1996-05-21 1996-05-21 Active matrix substrate and its fabrication method KR100205867B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960017119A KR100205867B1 (en) 1996-05-21 1996-05-21 Active matrix substrate and its fabrication method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960017119A KR100205867B1 (en) 1996-05-21 1996-05-21 Active matrix substrate and its fabrication method

Publications (2)

Publication Number Publication Date
KR970075984A true KR970075984A (en) 1997-12-10
KR100205867B1 KR100205867B1 (en) 1999-07-01

Family

ID=19459288

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960017119A KR100205867B1 (en) 1996-05-21 1996-05-21 Active matrix substrate and its fabrication method

Country Status (1)

Country Link
KR (1) KR100205867B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7126156B2 (en) 1997-08-19 2006-10-24 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor display device with integral control circuitry

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100654777B1 (en) * 2000-02-16 2006-12-08 엘지.필립스 엘시디 주식회사 liquid crystal display device and fabrication method thereof
KR100980020B1 (en) 2003-08-28 2010-09-03 삼성전자주식회사 Thin film transistor array panel and manufacturing method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7126156B2 (en) 1997-08-19 2006-10-24 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor display device with integral control circuitry
KR100680741B1 (en) * 1997-08-19 2007-02-09 가부시키가이샤 한도오따이 에네루기 켄큐쇼 A semiconductor device
US7750347B2 (en) 1997-08-19 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and semiconductor display device

Also Published As

Publication number Publication date
KR100205867B1 (en) 1999-07-01

Similar Documents

Publication Publication Date Title
KR950019870A (en) Liquid crystal display (LCD) device capable of preventing short circuit between signal line and pixel electrode and manufacturing method thereof
KR970011963A (en) LCD and its manufacturing method
KR970076040A (en) Method for manufacturing active matrix liquid crystal display device and active matrix liquid crystal display device
KR960042172A (en) LCD and its manufacturing method
KR960029834A (en) Liquid crystal display device and manufacturing method thereof
KR880001179A (en) Method of manufacturing thin film transistor array substrate
KR890015050A (en) Thin film formation method and active matrix display device and manufacturing method thereof
KR970048718A (en) Manufacturing method of liquid crystal display device
KR970076033A (en) Manufacturing method of liquid crystal display device
KR970066689A (en) Structure and Manufacturing Method of Liquid Crystal Display
KR100653467B1 (en) Method for manufacturing tft-lcd
KR960029855A (en) Thin film transistor liquid crystal display device and manufacturing method thereof
KR970010774B1 (en) Thin film transistor for liquid crystal device
KR970028753A (en) Manufacturing method of liquid crystal display element
KR970075984A (en) A method of manufacturing an active matrix substrate and an active matrix substrate
KR970072497A (en) A method of manufacturing an active matrix substrate and an active matrix substrate
KR970054502A (en) Vertical thin film transistor and its manufacturing method, and pixel array for ultra thin liquid crystal display device using same
KR970054526A (en) Thin film transistor-liquid crystal display device and manufacturing method thereof
KR960042175A (en) A liquid crystal display panel in which a thin film transistor having a plurality of channel regions is formed and a method of manufacturing the same
KR970054520A (en) Method of manufacturing thin film transistor of liquid crystal display device
KR940015621A (en) LCD panel manufacturing method and electrode pad structure
KR970059796A (en) Manufacturing method of liquid crystal display device
KR950012756A (en) Manufacturing method of thin film transistor for liquid crystal display device
KR970054490A (en) Manufacturing Method of Thin Film Transistor Liquid Crystal Display
KR970076026A (en) Manufacturing method of liquid crystal display device

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20120330

Year of fee payment: 14

FPAY Annual fee payment

Payment date: 20130329

Year of fee payment: 15

FPAY Annual fee payment

Payment date: 20160329

Year of fee payment: 18

EXPY Expiration of term