KR970048854A - Manufacturing method of liquid crystal display device - Google Patents

Manufacturing method of liquid crystal display device Download PDF

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Publication number
KR970048854A
KR970048854A KR1019950069746A KR19950069746A KR970048854A KR 970048854 A KR970048854 A KR 970048854A KR 1019950069746 A KR1019950069746 A KR 1019950069746A KR 19950069746 A KR19950069746 A KR 19950069746A KR 970048854 A KR970048854 A KR 970048854A
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KR
South Korea
Prior art keywords
forming
film
metal film
layer
liquid crystal
Prior art date
Application number
KR1019950069746A
Other languages
Korean (ko)
Other versions
KR100195278B1 (en
Inventor
김동규
이원희
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950069746A priority Critical patent/KR100195278B1/en
Priority to JP35145696A priority patent/JP3625598B2/en
Priority to TW090108351A priority patent/TWI257012B/en
Priority to US08/777,512 priority patent/US5731856A/en
Priority to TW085116278A priority patent/TW539891B/en
Publication of KR970048854A publication Critical patent/KR970048854A/en
Application granted granted Critical
Publication of KR100195278B1 publication Critical patent/KR100195278B1/en
Priority to JP2004002174A priority patent/JP2004163969A/en
Priority to JP2004002173A priority patent/JP2004163968A/en
Priority to JP2004261890A priority patent/JP3717078B2/en

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film

Abstract

마스크 수를 줄이면서 액정표시장치를 제조할 수 있는 액엉표시장치의 제조방법에 관하여 개시한다. 본 발명은 기판 상에 제1금속막을 형성하는 단계와, 상기 제1금속막을 1차로 사진식각하여 게이트 패턴을 형성하는 단계와, 상기 게이트 패턴 상에 절연막, 반도체막 및 제2금속막을 형성하는 단계와, 상기 제2금속막 및 반도체막을 2차로 사진식각하여 물질패턴층을 형성하는 단계와, 상기 물질패턴층이 형성된 기판의 전면에 투명도전막을 형성하는 단계와, 상기 투명도전막 및 물질패턴층을 3차로 사진식각하여 데이타 배선, 소오스/드레인 전극 및 화소전극을 형성하는 단계를 포함하는 것을 특징으로 하는 액정표시장치의 제조방법을 제공한다. 본 발명에 의하면, 종래 기술보다 적은 4차의 사진식각공정을 통해 제조비용이 절감된 액정표시장치를 제조할 수 있다.A method of manufacturing a liquid crystal display device capable of manufacturing a liquid crystal display device while reducing the number of masks is disclosed. The present invention includes forming a first metal film on a substrate, forming a gate pattern by first etching the first metal film, and forming an insulating film, a semiconductor film, and a second metal film on the gate pattern. And forming a material pattern layer by secondary photoetching of the second metal film and the semiconductor film, forming a transparent conductive film on the entire surface of the substrate on which the material pattern layer is formed, and forming the transparent conductive film and the material pattern layer. And a step of forming a data line, a source / drain electrode, and a pixel electrode by photolithography in a third order. According to the present invention, it is possible to manufacture a liquid crystal display device having a reduced manufacturing cost through a fourth photolithography process which is smaller than the prior art.

Description

액정표시장치의 제조방법Manufacturing method of liquid crystal display device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제4A도 내지 제7A도 및 제7B도는 각각 본 발명에 액정표시장치의 제조방법을 설명하기 위하여 도시한 단면도들과 평면도.4A to 7A and 7B are cross-sectional views and plan views, respectively, for explaining the method of manufacturing a liquid crystal display device according to the present invention.

Claims (6)

기판 상에 제1금속막을 형성하는 단계; 상기 제1믿었속막을 1차로 사진식각하여 게이트 패턴을 형성하는 단계; 상기 게이트 패턴 상에 절연막, 반도체막 및 제2금속막을 형성하는 단계; 상기 제2금속막 및 반도체막을 2차로 사진식각하여 물질패턴층을 형성하는 단계; 상기 물질패턴층이 형성된 기판의 전면에 투명도전막을 형성하는 단계; 및 상기 투명도전막 및 물질패턴층을 3차로 사진식각하여 데이타 배선, 소오스/드레인 전극 및 화소전극을 형성하는 단계를 포함하는 것을 특징으로 하는 액정표시장치의 제조방법.Forming a first metal film on the substrate; Forming a gate pattern by first performing photolithography on the first trusted layer; Forming an insulating film, a semiconductor film, and a second metal film on the gate pattern; Photo-etching the second metal film and the semiconductor film secondarily to form a material pattern layer; Forming a transparent conductive film on an entire surface of the substrate on which the material pattern layer is formed; And photo-etching the transparent conductive film and the material pattern layer in a third order to form a data line, a source / drain electrode, and a pixel electrode. 제1항에 있어서, 상기 데이타 배선, 소오스/드레인 전극 및 화소전극을 형성하는 단계 후에 기판의 전면에 보호막을 형성하는 단계와, 상기 보호막을 4차로 사진식각하여 상기 화소전극 상의 보호막을 제거하는 단계를 더 포함하는 것을 특징으로 하는 액정표시장치의 제조방법.The method of claim 1, further comprising forming a passivation layer on the entire surface of the substrate after forming the data line, the source / drain electrode, and the pixel electrode, and removing the passivation layer on the pixel electrode by photolithography the fourth passivation layer. Method of manufacturing a liquid crystal display device further comprising. 제1항에 있어서, 상기 반도체막은 비정질실리콘막과 불순물이 도핑된 비정질실리콘막의 이중막으로 형성하는 것을 특징으로 하는 액정표시장치의 제조방법.The method of claim 1, wherein the semiconductor film is formed of a double layer of an amorphous silicon film and an amorphous silicon film doped with impurities. 제3항에 있어서, 상기 3차 식각시 상기 소오스/드레인 전극 사이이 불순물이 도핑된 비정질실리콘막이 식각되는 것을 특징으로 하는 액정표시장치의 제조방법.The method of claim 3, wherein the amorphous silicon layer doped with impurities is etched between the source and drain electrodes during the third etching. 제1항에 있어서, 상기 제1금속막은 Al/Cr 또는 Mo/Al의 이중금속막으로 형성하는 것을 특징으로 하는 액정표시장치의 제조방법.The method of claim 1, wherein the first metal film is formed of a double metal film of Al / Cr or Mo / Al. 제5항에 있어서, 상기 제1금속막으로 Al/Cr의 이중금속막을 사용하는 경우 게이트패드 전극 위의 Al은 식각되는 것을 특징으로 하는 액정표시장치의 제조방법.The method of claim 5, wherein when the Al / Cr double metal film is used as the first metal film, Al on the gate pad electrode is etched. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950069746A 1995-12-30 1995-12-30 Menufacture method of lcd device KR100195278B1 (en)

Priority Applications (8)

Application Number Priority Date Filing Date Title
KR1019950069746A KR100195278B1 (en) 1995-12-30 1995-12-30 Menufacture method of lcd device
JP35145696A JP3625598B2 (en) 1995-12-30 1996-12-27 Manufacturing method of liquid crystal display device
TW090108351A TWI257012B (en) 1995-12-30 1996-12-30 Method for forming a liquid crystal display
US08/777,512 US5731856A (en) 1995-12-30 1996-12-30 Methods for forming liquid crystal displays including thin film transistors and gate pads having a particular structure
TW085116278A TW539891B (en) 1995-12-30 1996-12-30 Liquid crystal display
JP2004002174A JP2004163969A (en) 1995-12-30 2004-01-07 Method for manufacturing liquid crystal display device
JP2004002173A JP2004163968A (en) 1995-12-30 2004-01-07 Method for manufacturing liquid crystal display device
JP2004261890A JP3717078B2 (en) 1995-12-30 2004-09-09 Method for manufacturing liquid crystal display device and liquid crystal display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950069746A KR100195278B1 (en) 1995-12-30 1995-12-30 Menufacture method of lcd device

Publications (2)

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KR970048854A true KR970048854A (en) 1997-07-29
KR100195278B1 KR100195278B1 (en) 1999-06-15

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KR1019950069746A KR100195278B1 (en) 1995-12-30 1995-12-30 Menufacture method of lcd device

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100552300B1 (en) * 1999-06-11 2006-02-20 삼성전자주식회사 Thin film transistor array panel for liquid crystal display
KR100878265B1 (en) * 2001-11-21 2009-01-13 삼성전자주식회사 Method for manufacturing thin film transistor array panel

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