ATE434834T1 - Herstellungsverfahren von integriertem halbleiterschaltkreisbauelement mit halbleiterfestwertspeicherbauelementen - Google Patents

Herstellungsverfahren von integriertem halbleiterschaltkreisbauelement mit halbleiterfestwertspeicherbauelementen

Info

Publication number
ATE434834T1
ATE434834T1 AT02002105T AT02002105T ATE434834T1 AT E434834 T1 ATE434834 T1 AT E434834T1 AT 02002105 T AT02002105 T AT 02002105T AT 02002105 T AT02002105 T AT 02002105T AT E434834 T1 ATE434834 T1 AT E434834T1
Authority
AT
Austria
Prior art keywords
forming
conductive layer
region
layer
gate
Prior art date
Application number
AT02002105T
Other languages
English (en)
Inventor
Akihiko Ebina
Yutaka Maruo
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Application granted granted Critical
Publication of ATE434834T1 publication Critical patent/ATE434834T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
AT02002105T 2001-01-30 2002-01-28 Herstellungsverfahren von integriertem halbleiterschaltkreisbauelement mit halbleiterfestwertspeicherbauelementen ATE434834T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001021931A JP4325972B2 (ja) 2001-01-30 2001-01-30 不揮発性半導体記憶装置を含む半導体集積回路装置の製造方法

Publications (1)

Publication Number Publication Date
ATE434834T1 true ATE434834T1 (de) 2009-07-15

Family

ID=18887409

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02002105T ATE434834T1 (de) 2001-01-30 2002-01-28 Herstellungsverfahren von integriertem halbleiterschaltkreisbauelement mit halbleiterfestwertspeicherbauelementen

Country Status (8)

Country Link
US (1) US6709922B2 (de)
EP (1) EP1227518B1 (de)
JP (1) JP4325972B2 (de)
KR (1) KR100429954B1 (de)
CN (1) CN1252813C (de)
AT (1) ATE434834T1 (de)
DE (1) DE60232693D1 (de)
TW (1) TW530391B (de)

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US6897522B2 (en) * 2001-10-31 2005-05-24 Sandisk Corporation Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements
US6925007B2 (en) 2001-10-31 2005-08-02 Sandisk Corporation Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements
JP3956709B2 (ja) 2002-01-23 2007-08-08 セイコーエプソン株式会社 半導体装置の製造方法
JP2003243618A (ja) 2002-02-20 2003-08-29 Seiko Epson Corp 半導体装置の製造方法
JP3726760B2 (ja) 2002-02-20 2005-12-14 セイコーエプソン株式会社 半導体装置の製造方法
JP2003243617A (ja) 2002-02-20 2003-08-29 Seiko Epson Corp 半導体装置の製造方法
JP2003243616A (ja) * 2002-02-20 2003-08-29 Seiko Epson Corp 半導体装置の製造方法
JP2003258129A (ja) * 2002-03-01 2003-09-12 Seiko Epson Corp 不揮発性記憶装置の製造方法
JP2003258133A (ja) * 2002-03-05 2003-09-12 Seiko Epson Corp 不揮発性記憶装置の製造方法および半導体装置の製造方法
JP2003258132A (ja) * 2002-03-05 2003-09-12 Seiko Epson Corp 不揮発性記憶装置の製造方法
JP3640186B2 (ja) * 2002-03-06 2005-04-20 セイコーエプソン株式会社 半導体装置の製造方法
JP2003282744A (ja) * 2002-03-22 2003-10-03 Seiko Epson Corp 不揮発性記憶装置
JP3975349B2 (ja) * 2002-09-02 2007-09-12 セイコーエプソン株式会社 半導体装置およびその製造方法
JP3975350B2 (ja) * 2002-09-11 2007-09-12 セイコーエプソン株式会社 半導体装置の製造方法
JP3972196B2 (ja) * 2002-09-18 2007-09-05 セイコーエプソン株式会社 半導体装置の製造方法
JP3743514B2 (ja) * 2002-10-24 2006-02-08 セイコーエプソン株式会社 半導体装置およびその製造方法
US6888755B2 (en) * 2002-10-28 2005-05-03 Sandisk Corporation Flash memory cell arrays having dual control gates per memory cell charge storage element
JP3664159B2 (ja) 2002-10-29 2005-06-22 セイコーエプソン株式会社 半導体装置およびその製造方法
JP3664161B2 (ja) * 2002-10-30 2005-06-22 セイコーエプソン株式会社 半導体装置およびその製造方法
JP3664160B2 (ja) 2002-10-30 2005-06-22 セイコーエプソン株式会社 半導体装置およびその製造方法
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US20050251617A1 (en) * 2004-05-07 2005-11-10 Sinclair Alan W Hybrid non-volatile memory system
US7518179B2 (en) * 2004-10-08 2009-04-14 Freescale Semiconductor, Inc. Virtual ground memory array and method therefor
US7306552B2 (en) * 2004-12-03 2007-12-11 Samsung Electronics Co., Ltd. Semiconductor device having load resistor and method of fabricating the same
JP4936659B2 (ja) * 2004-12-27 2012-05-23 株式会社東芝 半導体装置の製造方法
JP4462424B2 (ja) * 2005-02-03 2010-05-12 セイコーエプソン株式会社 半導体装置
KR100629270B1 (ko) * 2005-02-23 2006-09-29 삼성전자주식회사 낸드형 플래시 메모리 소자 및 그 제조방법
US7112490B1 (en) * 2005-07-25 2006-09-26 Freescale Semiconductor, Inc. Hot carrier injection programmable structure including discontinuous storage elements and spacer control gates in a trench
US7619270B2 (en) * 2005-07-25 2009-11-17 Freescale Semiconductor, Inc. Electronic device including discontinuous storage elements
US7619275B2 (en) * 2005-07-25 2009-11-17 Freescale Semiconductor, Inc. Process for forming an electronic device including discontinuous storage elements
US7582929B2 (en) * 2005-07-25 2009-09-01 Freescale Semiconductor, Inc Electronic device including discontinuous storage elements
US7642594B2 (en) * 2005-07-25 2010-01-05 Freescale Semiconductor, Inc Electronic device including gate lines, bit lines, or a combination thereof
US7262997B2 (en) * 2005-07-25 2007-08-28 Freescale Semiconductor, Inc. Process for operating an electronic device including a memory array and conductive lines
KR100668350B1 (ko) * 2005-12-20 2007-01-12 삼성전자주식회사 낸드 구조의 멀티-비트 비휘발성 메모리 소자 및 그 제조방법
US7592224B2 (en) 2006-03-30 2009-09-22 Freescale Semiconductor, Inc Method of fabricating a storage device including decontinuous storage elements within and between trenches
US7951669B2 (en) * 2006-04-13 2011-05-31 Sandisk Corporation Methods of making flash memory cell arrays having dual control gates per memory cell charge storage element
FR2901723B1 (fr) * 2006-06-06 2008-07-04 Commissariat Energie Atomique Assemblage et procede d'assemblage par brasage d'un objet et d'un support
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US7838922B2 (en) * 2007-01-24 2010-11-23 Freescale Semiconductor, Inc. Electronic device including trenches and discontinuous storage elements
US7572699B2 (en) * 2007-01-24 2009-08-11 Freescale Semiconductor, Inc Process of forming an electronic device including fins and discontinuous storage elements
TWI478293B (zh) * 2011-05-16 2015-03-21 Promos Technologies Inc 非揮發性記憶元件的製造方法
US9735245B2 (en) * 2014-08-25 2017-08-15 Taiwan Semiconductor Manufacturing Co., Ltd. Recessed salicide structure to integrate a flash memory device with a high κ, metal gate logic device
JP2018142654A (ja) * 2017-02-28 2018-09-13 東芝メモリ株式会社 半導体装置及びその製造方法

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JP4904631B2 (ja) 2000-10-27 2012-03-28 ソニー株式会社 不揮発性半導体記憶装置およびその製造方法
US6413821B1 (en) * 2001-09-18 2002-07-02 Seiko Epson Corporation Method of fabricating semiconductor device including nonvolatile memory and peripheral circuit
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Also Published As

Publication number Publication date
EP1227518A3 (de) 2003-08-27
KR20020063825A (ko) 2002-08-05
JP4325972B2 (ja) 2009-09-02
KR100429954B1 (ko) 2004-05-03
JP2002231831A (ja) 2002-08-16
TW530391B (en) 2003-05-01
CN1252813C (zh) 2006-04-19
US6709922B2 (en) 2004-03-23
US20020127805A1 (en) 2002-09-12
DE60232693D1 (de) 2009-08-06
CN1369908A (zh) 2002-09-18
EP1227518A2 (de) 2002-07-31
EP1227518B1 (de) 2009-06-24

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