WO2004013693A3 - Alignement par diffusiometrie pour lithographie par empreinte - Google Patents

Alignement par diffusiometrie pour lithographie par empreinte Download PDF

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Publication number
WO2004013693A3
WO2004013693A3 PCT/US2003/023948 US0323948W WO2004013693A3 WO 2004013693 A3 WO2004013693 A3 WO 2004013693A3 US 0323948 W US0323948 W US 0323948W WO 2004013693 A3 WO2004013693 A3 WO 2004013693A3
Authority
WO
WIPO (PCT)
Prior art keywords
imprint lithography
scatterometry
alignment
liquid
template
Prior art date
Application number
PCT/US2003/023948
Other languages
English (en)
Other versions
WO2004013693A2 (fr
Inventor
Michael P C Watts
Ian Mcmackin
Sidlgata V Sreenivasan
Byung-Jin Choi
Ronald D Voisin
Norman E Schumaker
Original Assignee
Molecular Imprints Inc
Michael P C Watts
Ian Mcmackin
Sidlgata V Sreenivasan
Byung-Jin Choi
Ronald D Voisin
Norman E Schumaker
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/210,785 external-priority patent/US7027156B2/en
Priority claimed from US10/210,780 external-priority patent/US6916584B2/en
Priority claimed from US10/210,894 external-priority patent/US7070405B2/en
Application filed by Molecular Imprints Inc, Michael P C Watts, Ian Mcmackin, Sidlgata V Sreenivasan, Byung-Jin Choi, Ronald D Voisin, Norman E Schumaker filed Critical Molecular Imprints Inc
Priority to JP2004526254A priority Critical patent/JP2006516065A/ja
Priority to EP03767009A priority patent/EP1573395A4/fr
Priority to AU2003261317A priority patent/AU2003261317A1/en
Publication of WO2004013693A2 publication Critical patent/WO2004013693A2/fr
Publication of WO2004013693A3 publication Critical patent/WO2004013693A3/fr

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7049—Technique, e.g. interferometric
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7065—Production of alignment light, e.g. light source, control of coherence, polarization, pulse length, wavelength

Abstract

L'invention se rapporte à des procédés de dessin de motifs sur un substrat par lithographie par empreinte. La lithographie par empreinte est un processus consistant à répandre un liquide sur un substrat. Un gabarit est mis en contact avec le liquide et le liquide est durci. Le liquide durci comprend une empreinte de tout motif formé sur le gabarit. L'alignement du gabarit avec une couche formée au préalable sur un substrat, dans un mode de réalisation, est effectué par diffusiométrie.
PCT/US2003/023948 2002-08-01 2003-07-31 Alignement par diffusiometrie pour lithographie par empreinte WO2004013693A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2004526254A JP2006516065A (ja) 2002-08-01 2003-07-31 インプリント・リソグラフィの散乱計測アラインメント
EP03767009A EP1573395A4 (fr) 2002-08-01 2003-07-31 Alignement par diffusiometrie pour lithographie par empreinte
AU2003261317A AU2003261317A1 (en) 2002-08-01 2003-07-31 Scatterometry alignment for imprint lithography

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US10/210,780 2002-08-01
US10/210,785 US7027156B2 (en) 2002-08-01 2002-08-01 Scatterometry alignment for imprint lithography
US10/210,785 2002-08-01
US10/210,780 US6916584B2 (en) 2002-08-01 2002-08-01 Alignment methods for imprint lithography
US10/210,894 2002-08-01
US10/210,894 US7070405B2 (en) 2002-08-01 2002-08-01 Alignment systems for imprint lithography

Publications (2)

Publication Number Publication Date
WO2004013693A2 WO2004013693A2 (fr) 2004-02-12
WO2004013693A3 true WO2004013693A3 (fr) 2006-01-19

Family

ID=31499238

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/023948 WO2004013693A2 (fr) 2002-08-01 2003-07-31 Alignement par diffusiometrie pour lithographie par empreinte

Country Status (6)

Country Link
EP (1) EP1573395A4 (fr)
JP (2) JP2006516065A (fr)
KR (1) KR20050026088A (fr)
AU (1) AU2003261317A1 (fr)
TW (1) TWI266970B (fr)
WO (1) WO2004013693A2 (fr)

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JP5421221B2 (ja) 2014-02-19
TWI266970B (en) 2006-11-21
EP1573395A2 (fr) 2005-09-14
AU2003261317A1 (en) 2004-02-23
KR20050026088A (ko) 2005-03-14
TW200406651A (en) 2004-05-01
JP2006516065A (ja) 2006-06-15
JP2011101016A (ja) 2011-05-19
AU2003261317A8 (en) 2004-02-23
WO2004013693A2 (fr) 2004-02-12
EP1573395A4 (fr) 2010-09-29

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