WO2003041174A1 - Solid-state image sensor and its production method - Google Patents

Solid-state image sensor and its production method Download PDF

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Publication number
WO2003041174A1
WO2003041174A1 PCT/JP2002/011493 JP0211493W WO03041174A1 WO 2003041174 A1 WO2003041174 A1 WO 2003041174A1 JP 0211493 W JP0211493 W JP 0211493W WO 03041174 A1 WO03041174 A1 WO 03041174A1
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WO
WIPO (PCT)
Prior art keywords
light
solid
image sensor
state image
receiving device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2002/011493
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English (en)
French (fr)
Japanese (ja)
Inventor
Mitsumasa Koyanagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
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Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to US10/494,264 priority Critical patent/US7265402B2/en
Priority to JP2003543107A priority patent/JP5105695B2/ja
Priority to EP02778049A priority patent/EP1453097A4/en
Publication of WO2003041174A1 publication Critical patent/WO2003041174A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0037—Arrays characterized by the distribution or form of lenses
    • G02B3/0056—Arrays characterized by the distribution or form of lenses arranged along two different directions in a plane, e.g. honeycomb arrangement of lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0075—Arrays characterized by non-optical structures, e.g. having integrated holding or alignment means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0245—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising use of blind vias during the manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H10W20/211—Through-semiconductor vias, e.g. TSVs
    • H10W20/218—Through-semiconductor vias, e.g. TSVs in silicon-on-insulator [SOI] wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts
    • H10W72/244—Dispositions, e.g. layouts relative to underlying supporting features, e.g. bond pads, RDLs or vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
PCT/JP2002/011493 2001-11-05 2002-11-05 Solid-state image sensor and its production method Ceased WO2003041174A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US10/494,264 US7265402B2 (en) 2001-11-05 2002-11-05 Solid-state image sensor including a microlens
JP2003543107A JP5105695B2 (ja) 2001-11-05 2002-11-05 固体イメージセンサおよびその製造方法
EP02778049A EP1453097A4 (en) 2001-11-05 2002-11-05 TUBE-FREE IMAGE SENSOR AND METHOD FOR THE PRODUCTION THEREOF

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001340075 2001-11-05
JP2001-340075 2001-11-05

Publications (1)

Publication Number Publication Date
WO2003041174A1 true WO2003041174A1 (en) 2003-05-15

Family

ID=19154330

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2002/011493 Ceased WO2003041174A1 (en) 2001-11-05 2002-11-05 Solid-state image sensor and its production method

Country Status (7)

Country Link
US (1) US7265402B2 (https=)
EP (1) EP1453097A4 (https=)
JP (2) JP5105695B2 (https=)
KR (1) KR20050043754A (https=)
CN (1) CN100487898C (https=)
TW (1) TW200300291A (https=)
WO (1) WO2003041174A1 (https=)

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WO2004105137A1 (ja) * 2003-05-23 2004-12-02 Hamamatsu Photonics K.K. 光検出装置
WO2005093857A1 (ja) * 2004-03-29 2005-10-06 Hamamatsu Photonics K.K. 半導体光検出素子及びその製造方法
JP2006191081A (ja) * 2004-12-30 2006-07-20 Magnachip Semiconductor Ltd 受光領域が拡張されたイメージセンサ及びその製造方法
JP2006339566A (ja) * 2005-06-06 2006-12-14 Sony Corp 固体撮像装置およびその製造方法
JP2007165909A (ja) * 2005-12-16 2007-06-28 Icemos Technology Corp バックリット（後電）フォトダイオードおよびバックリット・フォトダイオートの製造方法
JP2007234725A (ja) * 2006-02-28 2007-09-13 Sony Corp 固体撮像装置および固体撮像装置の製造方法
JP2008066702A (ja) * 2006-08-10 2008-03-21 Matsushita Electric Ind Co Ltd 固体撮像素子及びカメラ
EP1536478A3 (en) * 2003-11-25 2008-07-23 FUJIFILM Corporation Solid state imaging device and producing method thereof
JP2008536330A (ja) * 2005-04-13 2008-09-04 シリコンファイル・テクノロジーズ・インコーポレイテッド ３次元構造を有するイメージセンサの分離型単位画素及びその製造方法
JP2008210846A (ja) * 2007-02-23 2008-09-11 Fujifilm Corp 裏面照射型固体撮像素子及びその製造方法
JP2008235478A (ja) * 2007-03-19 2008-10-02 Nikon Corp 撮像素子
JP2008252090A (ja) * 2007-03-09 2008-10-16 Korea Electronics Telecommun カルコゲン薄膜トランジスタアレイを備えた電子医療映像装置
JP2008544571A (ja) * 2005-06-28 2008-12-04 シリコンファイル・テクノロジーズ・インコーポレイテッド ３次元構造を持つイメージセンサの分離型単位画素及びその製造方法
JP2009164601A (ja) * 2008-01-07 2009-07-23 Dongbu Hitek Co Ltd イメージセンサーおよびその製造方法
KR100909773B1 (ko) * 2004-06-29 2009-07-29 마이크론 테크놀로지, 인크. 패키징된 마이크로일렉트로닉 이미저 및마이크로일렉트로닉 이미저의 패키징 방법
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JP2009528703A (ja) * 2006-03-02 2009-08-06 アイスモス・テクノロジー・リミテッド 非感光領域に対して高い割合の感光領域を有するフォトダイオード
JP2009194396A (ja) * 2003-08-28 2009-08-27 Fujikura Ltd 半導体パッケージおよびその製造方法
JP2009224400A (ja) * 2008-03-13 2009-10-01 Olympus Corp 固体撮像装置およびその製造方法
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JP2011124436A (ja) * 2009-12-11 2011-06-23 Oki Semiconductor Co Ltd 光検出装置及び光検出装置の製造方法
JP2011530165A (ja) * 2008-08-01 2011-12-15 オムニヴィジョン テクノロジーズ インコーポレイテッド 複数のセンシング層を有するイメージセンサ
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JP2015046638A (ja) * 2014-11-28 2015-03-12 株式会社ニコン 撮像素子
JP2015173252A (ja) * 2014-02-19 2015-10-01 キヤノン株式会社 撮像素子及び電子機器
JP2016026412A (ja) * 2015-11-02 2016-02-12 株式会社ニコン 撮像素子
WO2017163924A1 (ja) * 2016-03-24 2017-09-28 ソニー株式会社 撮像装置、電子機器
WO2018198814A1 (ja) * 2017-04-28 2018-11-01 ソニーセミコンダクタソリューションズ株式会社 半導体デバイス、製造方法、撮像素子、および電子機器
WO2019049662A1 (ja) * 2017-09-05 2019-03-14 ソニーセミコンダクタソリューションズ株式会社 センサチップおよび電子機器
JP2019068049A (ja) * 2017-09-29 2019-04-25 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． イメージセンシング装置及びその製造方法
JP2022009109A (ja) * 2016-02-25 2022-01-14 株式会社ニコン 撮像装置及び半導体装置
JP2022125153A (ja) * 2020-06-16 2022-08-26 株式会社ニコン 撮像素子
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JP5105695B2 (ja) 2012-12-26
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US20050029643A1 (en) 2005-02-10
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