WO2003041174A1 - Capteur d'images a semi-conducteur et procede de fabrication associe - Google Patents
Capteur d'images a semi-conducteur et procede de fabrication associe Download PDFInfo
- Publication number
- WO2003041174A1 WO2003041174A1 PCT/JP2002/011493 JP0211493W WO03041174A1 WO 2003041174 A1 WO2003041174 A1 WO 2003041174A1 JP 0211493 W JP0211493 W JP 0211493W WO 03041174 A1 WO03041174 A1 WO 03041174A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- light
- solid
- image sensor
- state image
- receiving device
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 3
- 230000015572 biosynthetic process Effects 0.000 abstract 2
- 239000010453 quartz Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
Classifications
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0037—Arrays characterized by the distribution or form of lenses
- G02B3/0056—Arrays characterized by the distribution or form of lenses arranged along two different directions in a plane, e.g. honeycomb arrangement of lenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0075—Arrays characterized by non-optical structures, e.g. having integrated holding or alignment means
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05573—Single external layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/1302—Disposition
- H01L2224/13025—Disposition the bump connector being disposed on a via connection of the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Light Receiving Elements (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/494,264 US7265402B2 (en) | 2001-11-05 | 2002-11-05 | Solid-state image sensor including a microlens |
JP2003543107A JP5105695B2 (ja) | 2001-11-05 | 2002-11-05 | 固体イメージセンサおよびその製造方法 |
EP02778049A EP1453097A4 (en) | 2001-11-05 | 2002-11-05 | TUBE-FREE IMAGE SENSOR AND METHOD FOR THE PRODUCTION THEREOF |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001-340075 | 2001-11-05 | ||
JP2001340075 | 2001-11-05 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2003041174A1 true WO2003041174A1 (fr) | 2003-05-15 |
Family
ID=19154330
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2002/011493 WO2003041174A1 (fr) | 2001-11-05 | 2002-11-05 | Capteur d'images a semi-conducteur et procede de fabrication associe |
Country Status (7)
Country | Link |
---|---|
US (1) | US7265402B2 (ja) |
EP (1) | EP1453097A4 (ja) |
JP (2) | JP5105695B2 (ja) |
KR (1) | KR20050043754A (ja) |
CN (1) | CN100487898C (ja) |
TW (1) | TW200300291A (ja) |
WO (1) | WO2003041174A1 (ja) |
Cited By (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2004105137A1 (ja) * | 2003-05-23 | 2004-12-02 | Hamamatsu Photonics K.K. | 光検出装置 |
EP1536478A2 (en) * | 2003-11-25 | 2005-06-01 | Fuji Photo Film Co., Ltd. | Solid state imaging device and producing method thereof |
WO2005093857A1 (ja) * | 2004-03-29 | 2005-10-06 | Hamamatsu Photonics K.K. | 半導体光検出素子及びその製造方法 |
JP2006191081A (ja) * | 2004-12-30 | 2006-07-20 | Magnachip Semiconductor Ltd | 受光領域が拡張されたイメージセンサ及びその製造方法 |
JP2006339566A (ja) * | 2005-06-06 | 2006-12-14 | Sony Corp | 固体撮像装置およびその製造方法 |
JP2007165909A (ja) * | 2005-12-16 | 2007-06-28 | Icemos Technology Corp | バックリット(後電)フォトダイオードおよびバックリット・フォトダイオートの製造方法 |
JP2007234725A (ja) * | 2006-02-28 | 2007-09-13 | Sony Corp | 固体撮像装置および固体撮像装置の製造方法 |
JP2008066702A (ja) * | 2006-08-10 | 2008-03-21 | Matsushita Electric Ind Co Ltd | 固体撮像素子及びカメラ |
JP2008536330A (ja) * | 2005-04-13 | 2008-09-04 | シリコンファイル・テクノロジーズ・インコーポレイテッド | 3次元構造を有するイメージセンサの分離型単位画素及びその製造方法 |
JP2008210846A (ja) * | 2007-02-23 | 2008-09-11 | Fujifilm Corp | 裏面照射型固体撮像素子及びその製造方法 |
JP2008235478A (ja) * | 2007-03-19 | 2008-10-02 | Nikon Corp | 撮像素子 |
JP2008252090A (ja) * | 2007-03-09 | 2008-10-16 | Korea Electronics Telecommun | カルコゲン薄膜トランジスタアレイを備えた電子医療映像装置 |
JP2008544571A (ja) * | 2005-06-28 | 2008-12-04 | シリコンファイル・テクノロジーズ・インコーポレイテッド | 3次元構造を持つイメージセンサの分離型単位画素及びその製造方法 |
JP2009164601A (ja) * | 2008-01-07 | 2009-07-23 | Dongbu Hitek Co Ltd | イメージセンサーおよびその製造方法 |
KR100909773B1 (ko) * | 2004-06-29 | 2009-07-29 | 마이크론 테크놀로지, 인크. | 패키징된 마이크로일렉트로닉 이미저 및마이크로일렉트로닉 이미저의 패키징 방법 |
JP2009170448A (ja) * | 2008-01-10 | 2009-07-30 | Nikon Corp | 固体撮像素子 |
JP2009528703A (ja) * | 2006-03-02 | 2009-08-06 | アイスモス・テクノロジー・リミテッド | 非感光領域に対して高い割合の感光領域を有するフォトダイオード |
JP2009194396A (ja) * | 2003-08-28 | 2009-08-27 | Fujikura Ltd | 半導体パッケージおよびその製造方法 |
JP2009224400A (ja) * | 2008-03-13 | 2009-10-01 | Olympus Corp | 固体撮像装置およびその製造方法 |
JP2009541990A (ja) * | 2006-06-19 | 2009-11-26 | シリコンファイル・テクノロジーズ・インコーポレイテッド | 背面照射型フォトダイオードを用いたイメージセンサ及びその製造方法 |
JP2010041043A (ja) * | 2008-07-10 | 2010-02-18 | Semiconductor Energy Lab Co Ltd | カラーセンサ及び当該カラーセンサを具備する電子機器 |
JP2010506404A (ja) * | 2006-10-05 | 2010-02-25 | イーストマン コダック カンパニー | 2枚のウェハを有するアクティブ画素センサ |
JP2010225778A (ja) * | 2009-03-23 | 2010-10-07 | Toshiba Corp | 撮像装置 |
JP2010245506A (ja) * | 2009-03-19 | 2010-10-28 | Sony Corp | 半導体装置とその製造方法、及び電子機器 |
JP2011124436A (ja) * | 2009-12-11 | 2011-06-23 | Oki Semiconductor Co Ltd | 光検出装置及び光検出装置の製造方法 |
JP2011530165A (ja) * | 2008-08-01 | 2011-12-15 | オムニヴィジョン テクノロジーズ インコーポレイテッド | 複数のセンシング層を有するイメージセンサ |
US20140084314A1 (en) * | 2005-08-02 | 2014-03-27 | International Business Machines Corporation | Injection molded microoptics |
JP2015046638A (ja) * | 2014-11-28 | 2015-03-12 | 株式会社ニコン | 撮像素子 |
JP2015173252A (ja) * | 2014-02-19 | 2015-10-01 | キヤノン株式会社 | 撮像素子及び電子機器 |
JP2016026412A (ja) * | 2015-11-02 | 2016-02-12 | 株式会社ニコン | 撮像素子 |
WO2017163924A1 (ja) * | 2016-03-24 | 2017-09-28 | ソニー株式会社 | 撮像装置、電子機器 |
WO2018198814A1 (ja) * | 2017-04-28 | 2018-11-01 | ソニーセミコンダクタソリューションズ株式会社 | 半導体デバイス、製造方法、撮像素子、および電子機器 |
WO2019049662A1 (ja) * | 2017-09-05 | 2019-03-14 | ソニーセミコンダクタソリューションズ株式会社 | センサチップおよび電子機器 |
JP2019068049A (ja) * | 2017-09-29 | 2019-04-25 | 三星電子株式会社Samsung Electronics Co.,Ltd. | イメージセンシング装置及びその製造方法 |
JP2022009109A (ja) * | 2016-02-25 | 2022-01-14 | 株式会社ニコン | 撮像装置及び半導体装置 |
JP2022125153A (ja) * | 2020-06-16 | 2022-08-26 | 株式会社ニコン | 撮像素子 |
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KR100795922B1 (ko) * | 2006-07-28 | 2008-01-21 | 삼성전자주식회사 | 이미지 픽업 소자 및 이미지 픽업 소자의 제조방법 |
US7816231B2 (en) * | 2006-08-29 | 2010-10-19 | International Business Machines Corporation | Device structures including backside contacts, and methods for forming same |
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TWI295107B (ja) | 2008-03-21 |
CN1871708A (zh) | 2006-11-29 |
JP5105695B2 (ja) | 2012-12-26 |
JPWO2003041174A1 (ja) | 2005-03-03 |
US20050029643A1 (en) | 2005-02-10 |
CN100487898C (zh) | 2009-05-13 |
JP2012186477A (ja) | 2012-09-27 |
EP1453097A4 (en) | 2008-01-23 |
US7265402B2 (en) | 2007-09-04 |
TW200300291A (en) | 2003-05-16 |
EP1453097A1 (en) | 2004-09-01 |
KR20050043754A (ko) | 2005-05-11 |
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