JP5105695B2 - 固体イメージセンサおよびその製造方法 - Google Patents

固体イメージセンサおよびその製造方法 Download PDF

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JP5105695B2
JP5105695B2 JP2003543107A JP2003543107A JP5105695B2 JP 5105695 B2 JP5105695 B2 JP 5105695B2 JP 2003543107 A JP2003543107 A JP 2003543107A JP 2003543107 A JP2003543107 A JP 2003543107A JP 5105695 B2 JP5105695 B2 JP 5105695B2
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light
light receiving
layer
receiving element
image sensor
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JPWO2003041174A1 (ja
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光正 小柳
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カミヤチョウ アイピー ホールディングス
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    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0037—Arrays characterized by the distribution or form of lenses
    • G02B3/0056—Arrays characterized by the distribution or form of lenses arranged along two different directions in a plane, e.g. honeycomb arrangement of lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B3/00—Simple or compound lenses
    • G02B3/0006—Arrays
    • G02B3/0075—Arrays characterized by non-optical structures, e.g. having integrated holding or alignment means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0245—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising use of blind vias during the manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H10W20/211—Through-semiconductor vias, e.g. TSVs
    • H10W20/218—Through-semiconductor vias, e.g. TSVs in silicon-on-insulator [SOI] wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/50—Encapsulations or containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241—Dispositions, e.g. layouts
    • H10W72/244—Dispositions, e.g. layouts relative to underlying supporting features, e.g. bond pads, RDLs or vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
JP2003543107A 2001-11-05 2002-11-05 固体イメージセンサおよびその製造方法 Expired - Fee Related JP5105695B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003543107A JP5105695B2 (ja) 2001-11-05 2002-11-05 固体イメージセンサおよびその製造方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2001340075 2001-11-05
JP2001340075 2001-11-05
JP2003543107A JP5105695B2 (ja) 2001-11-05 2002-11-05 固体イメージセンサおよびその製造方法
PCT/JP2002/011493 WO2003041174A1 (en) 2001-11-05 2002-11-05 Solid-state image sensor and its production method

Related Child Applications (1)

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JP2012072272A Division JP2012186477A (ja) 2001-11-05 2012-03-27 固体イメージセンサおよびその製造方法

Publications (2)

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JPWO2003041174A1 JPWO2003041174A1 (ja) 2005-03-03
JP5105695B2 true JP5105695B2 (ja) 2012-12-26

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JP2003543107A Expired - Fee Related JP5105695B2 (ja) 2001-11-05 2002-11-05 固体イメージセンサおよびその製造方法
JP2012072272A Pending JP2012186477A (ja) 2001-11-05 2012-03-27 固体イメージセンサおよびその製造方法

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US (1) US7265402B2 (https=)
EP (1) EP1453097A4 (https=)
JP (2) JP5105695B2 (https=)
KR (1) KR20050043754A (https=)
CN (1) CN100487898C (https=)
TW (1) TW200300291A (https=)
WO (1) WO2003041174A1 (https=)

Families Citing this family (101)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW569416B (en) * 2002-12-19 2004-01-01 Via Tech Inc High density multi-chip module structure and manufacturing method thereof
JP2004296453A (ja) * 2003-02-06 2004-10-21 Sharp Corp 固体撮像装置、半導体ウエハ、光学装置用モジュール、固体撮像装置の製造方法及び光学装置用モジュールの製造方法
EP1628348A4 (en) 2003-05-23 2007-07-18 Hamamatsu Photonics Kk PHOTO DETECTION DEVICE
JP4869546B2 (ja) * 2003-05-23 2012-02-08 ルネサスエレクトロニクス株式会社 半導体装置
US7180149B2 (en) * 2003-08-28 2007-02-20 Fujikura Ltd. Semiconductor package with through-hole
JP4542768B2 (ja) * 2003-11-25 2010-09-15 富士フイルム株式会社 固体撮像装置及びその製造方法
JP4331033B2 (ja) * 2004-03-29 2009-09-16 浜松ホトニクス株式会社 半導体光検出素子及びその製造方法
US7498647B2 (en) * 2004-06-10 2009-03-03 Micron Technology, Inc. Packaged microelectronic imagers and methods of packaging microelectronic imagers
US7294897B2 (en) * 2004-06-29 2007-11-13 Micron Technology, Inc. Packaged microelectronic imagers and methods of packaging microelectronic imagers
KR20060073186A (ko) * 2004-12-24 2006-06-28 동부일렉트로닉스 주식회사 씨모스 이미지 센서 및 그 제조방법
TWI239670B (en) * 2004-12-29 2005-09-11 Ind Tech Res Inst Package structure of light emitting diode and its manufacture method
KR100610481B1 (ko) 2004-12-30 2006-08-08 매그나칩 반도체 유한회사 수광영역을 넓힌 이미지센서 및 그 제조 방법
KR100782463B1 (ko) 2005-04-13 2007-12-05 (주)실리콘화일 3차원 구조를 갖는 이미지 센서의 분리형 단위화소 및 그제조방법
JP4792821B2 (ja) * 2005-06-06 2011-10-12 ソニー株式会社 固体撮像装置およびその製造方法
KR100718878B1 (ko) * 2005-06-28 2007-05-17 (주)실리콘화일 3차원 구조를 갖는 이미지 센서의 분리형 단위화소 및 그제조방법
KR100610497B1 (ko) * 2005-07-25 2006-08-09 삼성전자주식회사 이미지 센서 소자의 마이크로렌즈의 오염 방지 방법 및그를 이용한 이미지 센서 소자의 제조 방법
US7399421B2 (en) 2005-08-02 2008-07-15 International Business Machines Corporation Injection molded microoptics
US7576404B2 (en) * 2005-12-16 2009-08-18 Icemos Technology Ltd. Backlit photodiode and method of manufacturing a backlit photodiode
JP4907557B2 (ja) * 2006-01-25 2012-03-28 京セラ株式会社 撮像素子及びカメラモジュール
JP4915107B2 (ja) * 2006-02-28 2012-04-11 ソニー株式会社 固体撮像装置および固体撮像装置の製造方法
JP2009528703A (ja) * 2006-03-02 2009-08-06 アイスモス・テクノロジー・リミテッド 非感光領域に対して高い割合の感光領域を有するフォトダイオード
KR100801447B1 (ko) * 2006-06-19 2008-02-11 (주)실리콘화일 배면 광 포토다이오드를 이용한 이미지센서 및 그 제조방법
KR101176545B1 (ko) * 2006-07-26 2012-08-28 삼성전자주식회사 마이크로 렌즈의 형성방법과 마이크로 렌즈를 포함한이미지 센서 및 그의 제조방법
KR100795922B1 (ko) * 2006-07-28 2008-01-21 삼성전자주식회사 이미지 픽업 소자 및 이미지 픽업 소자의 제조방법
JP2008066702A (ja) * 2006-08-10 2008-03-21 Matsushita Electric Ind Co Ltd 固体撮像素子及びカメラ
US7816231B2 (en) * 2006-08-29 2010-10-19 International Business Machines Corporation Device structures including backside contacts, and methods for forming same
US8049256B2 (en) 2006-10-05 2011-11-01 Omnivision Technologies, Inc. Active pixel sensor having a sensor wafer connected to a support circuit wafer
US7888159B2 (en) * 2006-10-26 2011-02-15 Omnivision Technologies, Inc. Image sensor having curved micro-mirrors over the sensing photodiode and method for fabricating
JP4667408B2 (ja) * 2007-02-23 2011-04-13 富士フイルム株式会社 裏面照射型固体撮像素子の製造方法
KR100889746B1 (ko) * 2007-03-09 2009-03-24 한국전자통신연구원 칼코젠 박막 트랜지스터 어레이를 포함하는 전자의료영상장치
JP2008235478A (ja) * 2007-03-19 2008-10-02 Nikon Corp 撮像素子
US8017982B2 (en) 2007-06-12 2011-09-13 Micron Technology, Inc. Imagers with contact plugs extending through the substrates thereof and imager fabrication methods
JP5159192B2 (ja) 2007-07-06 2013-03-06 株式会社東芝 半導体装置の製造方法
US7691747B2 (en) * 2007-11-29 2010-04-06 STATS ChipPAC, Ltd Semiconductor device and method for forming passive circuit elements with through silicon vias to backside interconnect structures
US7956434B2 (en) 2007-12-27 2011-06-07 Dongbu Hitek Co., Ltd. Image sensor and method for manufacturing the same
KR100856942B1 (ko) * 2008-01-07 2008-09-04 주식회사 동부하이텍 이미지센서 및 그 제조방법
JP5223343B2 (ja) * 2008-01-10 2013-06-26 株式会社ニコン 固体撮像素子
JP5226348B2 (ja) * 2008-03-13 2013-07-03 オリンパス株式会社 固体撮像装置およびその製造方法
US7781716B2 (en) 2008-03-17 2010-08-24 Eastman Kodak Company Stacked image sensor with shared diffusion regions in respective dropped pixel positions of a pixel array
US7858915B2 (en) * 2008-03-31 2010-12-28 Eastman Kodak Company Active pixel sensor having two wafers
JP5518381B2 (ja) 2008-07-10 2014-06-11 株式会社半導体エネルギー研究所 カラーセンサ及び当該カラーセンサを具備する電子機器
US8471939B2 (en) * 2008-08-01 2013-06-25 Omnivision Technologies, Inc. Image sensor having multiple sensing layers
TWI462193B (zh) * 2008-09-04 2014-11-21 卓恩民 指紋感測晶片封裝方法及其封裝結構
JP2010062438A (ja) * 2008-09-05 2010-03-18 Toshiba Corp 固体撮像装置およびその設計方法
US8877616B2 (en) * 2008-09-08 2014-11-04 Luxtera, Inc. Method and system for monolithic integration of photonics and electronics in CMOS processes
KR101013552B1 (ko) 2008-09-10 2011-02-14 주식회사 하이닉스반도체 이미지 센서 모듈 및 이의 제조 방법
KR101038889B1 (ko) * 2008-11-05 2011-06-02 주식회사 동부하이텍 이미지 센서 및 그 제조 방법
US8405115B2 (en) * 2009-01-28 2013-03-26 Maxim Integrated Products, Inc. Light sensor using wafer-level packaging
US20100194465A1 (en) * 2009-02-02 2010-08-05 Ali Salih Temperature compensated current source and method therefor
US9142586B2 (en) 2009-02-24 2015-09-22 Taiwan Semiconductor Manufacturing Company, Ltd. Pad design for backside illuminated image sensor
US8531565B2 (en) * 2009-02-24 2013-09-10 Taiwan Semiconductor Manufacturing Company, Ltd. Front side implanted guard ring structure for backside illuminated image sensor
JP5985136B2 (ja) 2009-03-19 2016-09-06 ソニー株式会社 半導体装置とその製造方法、及び電子機器
JP5422236B2 (ja) * 2009-03-23 2014-02-19 株式会社東芝 撮像装置
JP5572979B2 (ja) * 2009-03-30 2014-08-20 ソニー株式会社 半導体装置の製造方法
US9123653B2 (en) * 2009-07-23 2015-09-01 Sony Corporation Solid-state imaging device, method of manufacturing the same, and electronic apparatus
JP5564847B2 (ja) * 2009-07-23 2014-08-06 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
JP5495752B2 (ja) * 2009-12-11 2014-05-21 ラピスセミコンダクタ株式会社 光検出装置及び光検出装置の製造方法
JP5172819B2 (ja) * 2009-12-28 2013-03-27 株式会社東芝 固体撮像装置
US20110156197A1 (en) * 2009-12-31 2011-06-30 Tivarus Cristian A Interwafer interconnects for stacked CMOS image sensors
CN102985803A (zh) 2010-02-19 2013-03-20 加利福尼亚太平洋生物科学股份有限公司 集成的分析系统和方法
WO2011124481A2 (en) * 2010-04-07 2011-10-13 International Business Machines Corporation Photo detector and integrated circuit
KR101143938B1 (ko) * 2010-04-22 2012-05-15 주식회사 지멤스 이미지센서 모듈, 이를 포함하는 영상 장치 및 그 제조방법
WO2012024512A2 (en) * 2010-08-18 2012-02-23 Array Optronix, Inc. Semiconductor photodetectors with integrated electronic control
US11929372B2 (en) * 2010-10-13 2024-03-12 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors and wafer bonding
US11133344B2 (en) * 2010-10-13 2021-09-28 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors
US11855114B2 (en) * 2010-10-13 2023-12-26 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors and wafer bonding
US11404466B2 (en) * 2010-10-13 2022-08-02 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors
US12396284B2 (en) * 2010-10-13 2025-08-19 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors and wafer bonding
US11605663B2 (en) * 2010-10-13 2023-03-14 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors and wafer bonding
US12080743B2 (en) * 2010-10-13 2024-09-03 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors and wafer bonding
US11488997B1 (en) * 2010-10-13 2022-11-01 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors and wafer bonding
US11043523B1 (en) * 2010-10-13 2021-06-22 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors
IT1403793B1 (it) 2010-12-30 2013-10-31 St Microelectronics Srl Protesi retinica
JP2012175067A (ja) * 2011-02-24 2012-09-10 Sony Corp 撮像素子、製造方法、および電子機器
JP2013012506A (ja) * 2011-06-28 2013-01-17 Sony Corp 固体撮像素子の製造方法、固体撮像素子、電子機器の製造方法、および電子機器。
TWI573203B (zh) * 2012-02-16 2017-03-01 索泰克公司 製作包含有具導電貫孔間置結構之半導體構造之方法及其相關構造與元件
US9059269B2 (en) * 2013-01-10 2015-06-16 International Business Machines Corporation Silicon-on-insulator heat sink
US9276030B2 (en) * 2013-03-15 2016-03-01 Sensors Unlimited, Inc. Read out integrated circuit input/output routing on permanent carrier
JP5424371B1 (ja) 2013-05-08 2014-02-26 誠 雫石 固体撮像素子及び撮像装置
US9667900B2 (en) * 2013-12-09 2017-05-30 Optiz, Inc. Three dimensional system-on-chip image sensor package
JP6300029B2 (ja) 2014-01-27 2018-03-28 ソニー株式会社 撮像素子、製造装置、製造方法
JP6494263B2 (ja) * 2014-02-19 2019-04-03 キヤノン株式会社 撮像素子及び電子機器
KR102055840B1 (ko) 2014-02-20 2019-12-17 삼성전자 주식회사 이미지 센서 패키지
JP6048482B2 (ja) * 2014-11-28 2016-12-21 株式会社ニコン 撮像素子
KR102261268B1 (ko) * 2014-12-29 2021-06-09 삼성전자주식회사 이미지 센서
US10070992B2 (en) 2015-04-08 2018-09-11 Stmicroelectronics S.R.L. Implantable modular system for a system for electrically stimulating a biological tissue
US9455187B1 (en) 2015-06-18 2016-09-27 International Business Machines Corporation Backside device contact
JP6639188B2 (ja) * 2015-10-21 2020-02-05 ソニーセミコンダクタソリューションズ株式会社 半導体装置、および製造方法
JP6361633B2 (ja) * 2015-11-02 2018-07-25 株式会社ニコン 撮像素子
JP2017152546A (ja) * 2016-02-25 2017-08-31 株式会社ニコン 撮像装置及び半導体装置
JP2017174994A (ja) * 2016-03-24 2017-09-28 ソニー株式会社 撮像装置、電子機器
JP2018190766A (ja) 2017-04-28 2018-11-29 ソニーセミコンダクタソリューションズ株式会社 半導体デバイス、製造方法、撮像素子、および電子機器
US10418405B2 (en) 2017-09-05 2019-09-17 Sony Semiconductor Solutions Corporation Sensor chip and electronic apparatus
KR102477352B1 (ko) * 2017-09-29 2022-12-15 삼성전자주식회사 반도체 패키지 및 이미지 센서
KR102430496B1 (ko) 2017-09-29 2022-08-08 삼성전자주식회사 이미지 센싱 장치 및 그 제조 방법
US10608036B2 (en) * 2017-10-17 2020-03-31 Qualcomm Incorporated Metal mesh light pipe for transporting light in an image sensor
CN107991838B (zh) * 2017-11-06 2020-10-23 万维科研有限公司 自适应三维立体成像系统
US11756977B2 (en) 2018-06-21 2023-09-12 Semiconductor Components Industries, Llc Backside illumination image sensors
JP7533533B2 (ja) * 2020-06-16 2024-08-14 株式会社ニコン 撮像素子
WO2022153583A1 (ja) * 2021-01-13 2022-07-21 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置
JP7834102B2 (ja) * 2021-06-17 2026-03-23 株式会社半導体エネルギー研究所 撮像装置および電子機器

Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62217644A (ja) * 1986-03-19 1987-09-25 Hitachi Ltd 半導体装置
JPH05110960A (ja) * 1991-10-17 1993-04-30 Olympus Optical Co Ltd 固体撮像装置
JPH05144955A (ja) * 1991-11-20 1993-06-11 Kyocera Corp センサー素子収納用パツケージ
JPH0645575A (ja) * 1992-07-22 1994-02-18 Hamamatsu Photonics Kk 半導体エネルギー検出器の製造方法
JPH0645572A (ja) * 1992-07-22 1994-02-18 Nikon Corp マイクロレンズを備えた固体撮像素子
JPH06196680A (ja) * 1992-12-22 1994-07-15 Hamamatsu Photonics Kk 半導体エネルギー検出器とその製造方法
JPH06326285A (ja) * 1993-05-17 1994-11-25 Sanyo Electric Co Ltd マイクロレンズの製造方法
JPH06350068A (ja) * 1993-06-03 1994-12-22 Hamamatsu Photonics Kk 半導体エネルギー線検出器の製造方法
JPH10209414A (ja) * 1997-01-22 1998-08-07 Nikon Corp 熱型赤外線イメージセンサ
JPH11261044A (ja) * 1998-03-11 1999-09-24 Matsushita Electric Ind Co Ltd 固体撮像素子付半導体装置及び該半導体装置の製造方法
JP2000138361A (ja) * 1998-10-29 2000-05-16 Sony Corp 固体撮像装置及びその製造方法並びに液晶表示装置の製造方法
JP2000171294A (ja) * 1998-12-09 2000-06-23 Mitsubishi Electric Corp シリコン赤外線透過窓、その製造方法および赤外線検知素子用気密パッケージ
JP2001077337A (ja) * 1999-09-02 2001-03-23 Fuji Photo Film Co Ltd Ｃｃｄパッケージ
JP2001339057A (ja) * 2000-05-30 2001-12-07 Mitsumasa Koyanagi ３次元画像処理装置の製造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5347154A (en) 1990-11-15 1994-09-13 Seiko Instruments Inc. Light valve device using semiconductive composite substrate
JP2821830B2 (ja) 1992-05-14 1998-11-05 セイコーインスツルメンツ株式会社 半導体薄膜素子その応用装置および半導体薄膜素子の製造方法
JPH06232379A (ja) * 1993-02-01 1994-08-19 Sharp Corp 固体撮像素子
JPH07115184A (ja) * 1993-08-24 1995-05-02 Canon Inc 積層型固体撮像装置及びその製造方法
DE4433833A1 (de) 1994-09-22 1996-03-28 Fraunhofer Ges Forschung Verfahren zur Herstellung einer dreidimensionalen integrierten Schaltung unter Erreichung hoher Systemausbeuten
JP2917920B2 (ja) * 1996-06-27 1999-07-12 日本電気株式会社 固体撮像装置およびその製造方法
JP2967736B2 (ja) 1996-12-02 1999-10-25 日本電気株式会社 赤外線撮像素子とその製造方法
JP3674209B2 (ja) * 1997-01-23 2005-07-20 ソニー株式会社 固体撮像装置及びその製造方法
JP4538107B2 (ja) 1998-03-02 2010-09-08 エヌエックスピー ビー ヴィ 半導体素子及び金属化層を有する絶縁層が接着剤により取付られているガラス支持体を有する半導体装置
JP3395747B2 (ja) 2000-01-11 2003-04-14 日本電気株式会社 半導体集積回路の製造方法
JP3880278B2 (ja) * 2000-03-10 2007-02-14 オリンパス株式会社 固体撮像装置及びその製造方法
US6285064B1 (en) * 2000-03-28 2001-09-04 Omnivision Technologies, Inc. Chip scale packaging technique for optical image sensing integrated circuits
JP4652634B2 (ja) * 2001-08-31 2011-03-16 キヤノン株式会社 撮像装置

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62217644A (ja) * 1986-03-19 1987-09-25 Hitachi Ltd 半導体装置
JPH05110960A (ja) * 1991-10-17 1993-04-30 Olympus Optical Co Ltd 固体撮像装置
JPH05144955A (ja) * 1991-11-20 1993-06-11 Kyocera Corp センサー素子収納用パツケージ
JPH0645575A (ja) * 1992-07-22 1994-02-18 Hamamatsu Photonics Kk 半導体エネルギー検出器の製造方法
JPH0645572A (ja) * 1992-07-22 1994-02-18 Nikon Corp マイクロレンズを備えた固体撮像素子
JPH06196680A (ja) * 1992-12-22 1994-07-15 Hamamatsu Photonics Kk 半導体エネルギー検出器とその製造方法
JPH06326285A (ja) * 1993-05-17 1994-11-25 Sanyo Electric Co Ltd マイクロレンズの製造方法
JPH06350068A (ja) * 1993-06-03 1994-12-22 Hamamatsu Photonics Kk 半導体エネルギー線検出器の製造方法
JPH10209414A (ja) * 1997-01-22 1998-08-07 Nikon Corp 熱型赤外線イメージセンサ
JPH11261044A (ja) * 1998-03-11 1999-09-24 Matsushita Electric Ind Co Ltd 固体撮像素子付半導体装置及び該半導体装置の製造方法
JP2000138361A (ja) * 1998-10-29 2000-05-16 Sony Corp 固体撮像装置及びその製造方法並びに液晶表示装置の製造方法
JP2000171294A (ja) * 1998-12-09 2000-06-23 Mitsubishi Electric Corp シリコン赤外線透過窓、その製造方法および赤外線検知素子用気密パッケージ
JP2001077337A (ja) * 1999-09-02 2001-03-23 Fuji Photo Film Co Ltd Ｃｃｄパッケージ
JP2001339057A (ja) * 2000-05-30 2001-12-07 Mitsumasa Koyanagi ３次元画像処理装置の製造方法

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