US20180175106A1 - Light emitting device and display device including the same - Google Patents

Light emitting device and display device including the same Download PDF

Info

Publication number
US20180175106A1
US20180175106A1 US15/851,305 US201715851305A US2018175106A1 US 20180175106 A1 US20180175106 A1 US 20180175106A1 US 201715851305 A US201715851305 A US 201715851305A US 2018175106 A1 US2018175106 A1 US 2018175106A1
Authority
US
United States
Prior art keywords
light emitting
reflection
electrode
rel
rod
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US15/851,305
Other languages
English (en)
Inventor
Dae Hyun Kim
Jong Hyuk KANG
Joo Yeol Lee
Hyun Deok Im
Hyun Min Cho
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Display Co Ltd
Original Assignee
Samsung Display Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Display Co Ltd filed Critical Samsung Display Co Ltd
Publication of US20180175106A1 publication Critical patent/US20180175106A1/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1255Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/786Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78633Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/385Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/387Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40Materials therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483Containers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • H01L33/60Reflective elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0016Processes relating to electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0058Processes relating to semiconductor body packages relating to optical field-shaping elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0066Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26Materials of the light emitting region
    • H01L33/30Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40Materials therefor
    • H01L33/405Reflective materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
US15/851,305 2016-12-21 2017-12-21 Light emitting device and display device including the same Abandoned US20180175106A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020160175770A KR102587215B1 (ko) 2016-12-21 2016-12-21 발광 장치 및 이를 구비한 표시 장치
KR10-2016-0175770 2016-12-21

Publications (1)

Publication Number Publication Date
US20180175106A1 true US20180175106A1 (en) 2018-06-21

Family

ID=62556948

Family Applications (4)

Application Number Title Priority Date Filing Date
US15/851,500 Active US10461123B2 (en) 2016-12-21 2017-12-21 Light emitting device and display device including the same
US15/851,305 Abandoned US20180175106A1 (en) 2016-12-21 2017-12-21 Light emitting device and display device including the same
US16/665,818 Active 2038-04-03 US11581363B2 (en) 2016-12-21 2019-10-28 Light emitting device and display device including the same
US18/166,985 Pending US20230187474A1 (en) 2016-12-21 2023-02-09 Light emitting device and display device including the same

Family Applications Before (1)

Application Number Title Priority Date Filing Date
US15/851,500 Active US10461123B2 (en) 2016-12-21 2017-12-21 Light emitting device and display device including the same

Family Applications After (2)

Application Number Title Priority Date Filing Date
US16/665,818 Active 2038-04-03 US11581363B2 (en) 2016-12-21 2019-10-28 Light emitting device and display device including the same
US18/166,985 Pending US20230187474A1 (en) 2016-12-21 2023-02-09 Light emitting device and display device including the same

Country Status (2)

Country Link
US (4) US10461123B2 (ko)
KR (2) KR102587215B1 (ko)

Cited By (62)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200040347A (ko) * 2018-10-08 2020-04-20 삼성디스플레이 주식회사 화소, 이를 구비한 표시 장치 및 그의 구동 방법
US10629791B2 (en) 2018-02-08 2020-04-21 Samsung Display Co., Ltd. Light emitting device and fabricating method thereof
CN112400233A (zh) * 2018-07-18 2021-02-23 三星显示有限公司 显示装置及用于制造显示装置的方法
US20210134769A1 (en) * 2019-11-04 2021-05-06 Samsung Display Co., Ltd. Display device
CN112840458A (zh) * 2018-10-10 2021-05-25 三星显示有限公司 显示装置
CN112913021A (zh) * 2018-10-16 2021-06-04 三星显示有限公司 显示设备
US20210202803A1 (en) * 2019-12-30 2021-07-01 Samsung Display Co., Ltd. Display device and method of manufacturing the same
US20210202452A1 (en) * 2019-12-30 2021-07-01 Samsung Display Co., Ltd. Display device and method of manufacturing the same
CN113169212A (zh) * 2018-12-07 2021-07-23 三星显示有限公司 显示装置及其制造方法
CN113169206A (zh) * 2018-11-21 2021-07-23 三星显示有限公司 发光器件和具有该发光器件的显示装置
US20210242381A1 (en) * 2020-01-30 2021-08-05 Samsung Display Co., Ltd. Display device and method of manufacturing the same
CN113228289A (zh) * 2018-12-24 2021-08-06 三星显示有限公司 显示装置及其修复方法
US20210257349A1 (en) * 2020-02-17 2021-08-19 Samsung Display Co., Ltd. Display device
US20210272937A1 (en) * 2018-07-10 2021-09-02 Samsung Display Co., Ltd. Light-emitting device and display device comprising same
US20210280746A1 (en) * 2018-07-24 2021-09-09 Samsung Display Co., Ltd. Display device and manufacturing method therefor
US20210280632A1 (en) * 2020-03-03 2021-09-09 Samsung Display Co., Ltd. Display device and method of fabricating the same
US20210288104A1 (en) * 2020-03-11 2021-09-16 Samsung Display Co., Ltd. Display device and manufacturing method thereof
JP2021529352A (ja) * 2018-07-04 2021-10-28 三星ディスプレイ株式會社Samsung Display Co.,Ltd. 表示装置
US20210343783A1 (en) * 2018-10-02 2021-11-04 Samsung Display Co., Ltd. Display device
JP2021529997A (ja) * 2018-07-06 2021-11-04 三星ディスプレイ株式會社Samsung Display Co.,Ltd. 表示装置およびその製造方法
EP3910671A1 (en) * 2020-05-13 2021-11-17 Samsung Display Co., Ltd. Display device
US20210359165A1 (en) * 2018-10-11 2021-11-18 Samsung Display Co., Ltd. Light-emitting device, method for producing same, and display device including same
US20210367109A1 (en) * 2020-05-21 2021-11-25 Samsung Display Co., Ltd. Display device
CN113745266A (zh) * 2021-02-09 2021-12-03 友达光电股份有限公司 显示装置
US20210399177A1 (en) * 2020-06-22 2021-12-23 Samsung Display Co., Ltd. Display device
US11211534B2 (en) * 2018-12-04 2021-12-28 Samsung Display Co., Ltd. Display device and method of fabricating the same
US20210407970A1 (en) * 2020-06-30 2021-12-30 Samsung Display Co., Ltd. Pixel and display device having the same
EP3828930A3 (en) * 2019-11-26 2022-01-12 Samsung Display Co., Ltd. Display device
US20220020734A1 (en) * 2020-07-15 2022-01-20 Samsung Display Co., Ltd. Display device and method of fabricating the same
US20220037299A1 (en) * 2018-09-21 2022-02-03 Samsung Display Co., Ltd. Display device and method of manufacturing the same
US20220059513A1 (en) * 2018-11-15 2022-02-24 Samsung Display Co., Ltd. Display device and method for manufacturing display device
US20220069164A1 (en) * 2020-08-31 2022-03-03 Samsung Display Co., Ltd. Light-emitting element, method of manufacturing light-emitting element, and display device including light-emitting element
US20220109085A1 (en) * 2020-10-05 2022-04-07 Samsung Display Co., Ltd. Display device and manufacturing method thereof
EP3982430A1 (en) * 2020-10-08 2022-04-13 Samsung Display Co., Ltd. Display device
EP3832739A4 (en) * 2018-07-30 2022-04-27 Samsung Display Co., Ltd. ELECTROLUMINESCENT DEVICE AND DISPLAY DEVICE COMPRISING IT
US20220140024A1 (en) * 2020-11-03 2022-05-05 Samsung Display Co., Ltd. Display device and method of manufacturing the same
EP3836217A4 (en) * 2018-08-07 2022-05-11 Samsung Display Co., Ltd. DISPLAY DEVICE AND METHOD OF MANUFACTURING IT
EP3848969A4 (en) * 2018-09-03 2022-06-01 Samsung Display Co., Ltd. LIGHT EMITTING DEVICE AND DISPLAY DEVICE THEREOF
US20220181522A1 (en) * 2019-04-16 2022-06-09 Samsung Display Co., Ltd. Display device and method for manufacturing same
US11362250B2 (en) * 2020-04-03 2022-06-14 Samsung Display Co., Ltd. Display device
EP3855494A4 (en) * 2018-09-21 2022-06-15 Samsung Display Co., Ltd. DISPLAY DEVICE AND METHOD OF MANUFACTURING IT
US20220209071A1 (en) * 2020-12-30 2022-06-30 Samsung Display Co., Ltd. Display device and manufacturing method thereof
EP3863058A4 (en) * 2018-10-01 2022-07-06 Samsung Display Co., Ltd. DISPLAY DEVICE AND METHOD OF MANUFACTURE THEREOF
EP3866203A4 (en) * 2018-10-11 2022-07-06 Samsung Display Co., Ltd. ELECTROLUMINESCENT DEVICE, METHOD FOR MANUFACTURING IT AND DISPLAY DEVICE COMPRISING IT
US11393798B2 (en) * 2019-09-23 2022-07-19 Samsung Display Co., Ltd. Display device
EP3890020A4 (en) * 2018-11-26 2022-08-17 Samsung Display Co., Ltd. INDICATOR
EP3890015A4 (en) * 2018-11-27 2022-08-24 Samsung Display Co., Ltd. DISPLAY DEVICE AND ASSOCIATED METHOD OF MANUFACTURING
US11450268B2 (en) * 2019-12-16 2022-09-20 Samsung Display Co., Ltd. Display device and fabricating method for display device
EP4060736A1 (en) * 2021-03-16 2022-09-21 Samsung Display Co., Ltd. Display device
EP3910676A4 (en) * 2019-01-07 2022-10-05 Samsung Display Co., Ltd. DISPLAY DEVICE AND METHOD OF MANUFACTURING IT
EP3913677A4 (en) * 2019-01-15 2022-10-19 Samsung Display Co., Ltd. INDICATOR
EP4050406A4 (en) * 2019-10-24 2022-11-02 BOE Technology Group Co., Ltd. CONTROL SUBSTRATE, METHOD FOR MAKING IT AND DISPLAY APPARATUS
US20220384401A1 (en) * 2019-11-08 2022-12-01 Samsung Display Co., Ltd. Display device
EP3937248A4 (en) * 2019-04-08 2022-12-28 Samsung Display Co., Ltd. PIXEL, DISPLAY DEVICE COMPRISING THE SAME AND METHOD OF MANUFACTURING THEREOF
EP3968383A4 (en) * 2019-05-07 2023-01-25 Samsung Display Co., Ltd. PIXEL AND DISPLAY DEVICE COMPRISING THEM
US11682693B2 (en) 2018-08-06 2023-06-20 Samsung Display Co., Ltd. Display device
EP3985734A4 (en) * 2019-06-17 2023-07-05 Samsung Display Co., Ltd. DISPLAY DEVICE AND METHOD OF MANUFACTURE THEREOF
EP3989285A4 (en) * 2019-06-21 2023-07-19 Samsung Display Co., Ltd. DISPLAY DEVICE AND METHOD OF MANUFACTURING IT
EP4027391A4 (en) * 2019-09-05 2023-10-18 Samsung Display Co., Ltd. DISPLAY DEVICE AND METHOD FOR MANUFACTURING SAME
EP4033545A4 (en) * 2019-09-16 2023-10-25 Samsung Display Co., Ltd. LIGHT EMITTING DIODE AND DISPLAY DEVICE THEREOF
EP3965152B1 (en) * 2020-09-07 2024-05-01 Samsung Display Co., Ltd. Display device
US11984537B2 (en) * 2020-06-22 2024-05-14 Samsung Display Co., Ltd. Display device

Families Citing this family (74)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102446139B1 (ko) 2017-12-06 2022-09-22 삼성디스플레이 주식회사 발광 다이오드 장치 및 이의 제조 방법
KR102299992B1 (ko) 2018-04-25 2021-09-10 삼성디스플레이 주식회사 발광 장치, 이를 구비한 표시 장치, 및 그의 제조 방법
KR102540894B1 (ko) * 2018-07-05 2023-06-09 삼성디스플레이 주식회사 발광장치 및 그의 제조방법
KR102600602B1 (ko) * 2018-07-09 2023-11-10 삼성디스플레이 주식회사 발광 장치, 그의 제조 방법, 및 이를 포함한 표시 장치
KR102593430B1 (ko) * 2018-07-09 2023-10-26 삼성디스플레이 주식회사 발광 장치 및 이를 구비한 표시 장치
KR102552602B1 (ko) * 2018-07-10 2023-07-10 삼성디스플레이 주식회사 발광 장치, 그의 제조 방법, 및 이를 구비한 표시 장치
KR102604659B1 (ko) * 2018-07-13 2023-11-21 삼성디스플레이 주식회사 발광 장치 및 이의 제조 방법
KR102591768B1 (ko) 2018-07-17 2023-10-20 삼성디스플레이 주식회사 표시 장치
KR102587133B1 (ko) * 2018-07-19 2023-10-10 삼성디스플레이 주식회사 표시 장치
KR102591056B1 (ko) * 2018-07-20 2023-10-20 삼성디스플레이 주식회사 발광 장치, 그의 제조 방법, 및 이를 포함한 표시 장치
KR102657126B1 (ko) * 2018-07-20 2024-04-16 삼성디스플레이 주식회사 발광 장치 및 이를 구비한 표시 장치
KR102559097B1 (ko) 2018-07-27 2023-07-26 삼성디스플레이 주식회사 발광 장치, 그의 제조 방법, 및 이를 구비한 표시 장치
KR102607727B1 (ko) * 2018-08-01 2023-11-29 삼성디스플레이 주식회사 표시 장치
KR102526778B1 (ko) 2018-08-07 2023-05-02 삼성디스플레이 주식회사 표시 장치 및 표시 장치 제조 방법
KR102626051B1 (ko) * 2018-08-14 2024-01-19 삼성디스플레이 주식회사 발광 소자, 발광 소자를 포함하는 픽셀 구조체 및 그 제조 방법
KR102557981B1 (ko) * 2018-08-20 2023-07-24 삼성디스플레이 주식회사 발광 장치, 그의 제조 방법, 및 이를 구비한 표시 장치
KR102572340B1 (ko) * 2018-08-21 2023-08-31 삼성디스플레이 주식회사 표시 장치 및 표시 장치 제조 방법
KR102536489B1 (ko) * 2018-09-18 2023-05-25 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
CN112703595A (zh) * 2018-09-19 2021-04-23 三星显示有限公司 发光器件及具有该发光器件的显示装置
KR102524569B1 (ko) * 2018-09-21 2023-04-24 삼성디스플레이 주식회사 표시 장치 및 그의 제조 방법
KR102111461B1 (ko) * 2018-10-25 2020-05-15 엘지전자 주식회사 반도체 발광 소자를 이용한 디스플레이 장치 및 그 제조 방법
JP7083736B2 (ja) * 2018-10-26 2022-06-13 株式会社ジャパンディスプレイ 表示装置
KR102645641B1 (ko) * 2018-11-05 2024-03-08 삼성디스플레이 주식회사 화소, 그것을 포함하는 표시 장치, 및 그것의 제조 방법
KR102645630B1 (ko) * 2018-11-06 2024-03-08 삼성디스플레이 주식회사 표시 장치 및 그것의 제조 방법
KR102621668B1 (ko) * 2018-11-08 2024-01-09 삼성디스플레이 주식회사 표시 장치 및 표시 장치 제조 방법
KR102647790B1 (ko) * 2018-11-20 2024-03-14 삼성디스플레이 주식회사 표시 장치 및 표시 장치 제조 방법
KR20200059377A (ko) * 2018-11-20 2020-05-29 삼성디스플레이 주식회사 화소, 이를 구비하는 표시 장치, 및 그의 제조 방법
KR102579915B1 (ko) * 2018-11-22 2023-09-18 삼성디스플레이 주식회사 표시 장치 및 그것의 제조 방법
US20220093828A1 (en) * 2018-11-27 2022-03-24 Samsung Display Co., Ltd. Display device
KR20200066438A (ko) * 2018-11-30 2020-06-10 삼성디스플레이 주식회사 표시 장치 및 그의 제조 방법
KR102541260B1 (ko) * 2018-12-13 2023-06-12 삼성디스플레이 주식회사 표시 장치 및 그의 제조 방법
US10991865B2 (en) * 2018-12-20 2021-04-27 Samsung Display Co., Ltd. Display device
KR102535276B1 (ko) 2018-12-20 2023-05-23 삼성디스플레이 주식회사 표시 장치 및 그의 제조 방법
KR102580167B1 (ko) * 2019-01-09 2023-09-21 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
KR20200088962A (ko) 2019-01-15 2020-07-24 삼성디스플레이 주식회사 발광 장치 및 이를 포함하는 표시 장치
KR102626452B1 (ko) * 2019-01-15 2024-01-18 삼성디스플레이 주식회사 발광 소자의 제조방법 및 발광 소자를 포함하는 표시 장치
KR102622348B1 (ko) * 2019-02-11 2024-01-10 삼성디스플레이 주식회사 화소 및 이를 구비한 표시 장치
KR20200102607A (ko) * 2019-02-21 2020-09-01 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
KR20200105598A (ko) * 2019-02-28 2020-09-08 삼성디스플레이 주식회사 표시 장치
EP3951880A4 (en) * 2019-03-28 2022-12-28 Samsung Display Co., Ltd. DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
KR20200121438A (ko) * 2019-04-15 2020-10-26 삼성디스플레이 주식회사 표시 장치 및 그의 제조 방법
KR20200130606A (ko) * 2019-05-10 2020-11-19 삼성디스플레이 주식회사 표시 장치 및 그의 제조 방법
KR20200138479A (ko) * 2019-05-29 2020-12-10 삼성디스플레이 주식회사 표시 장치
US11275473B2 (en) * 2019-06-13 2022-03-15 Samsung Display Co., Ltd. Display panel and display device including the same
KR20200145899A (ko) * 2019-06-19 2020-12-31 삼성디스플레이 주식회사 표시 장치
KR20210008252A (ko) * 2019-07-12 2021-01-21 삼성디스플레이 주식회사 화소, 이를 구비한 표시 장치 및 그의 제조 방법
KR20210016187A (ko) * 2019-08-01 2021-02-15 삼성디스플레이 주식회사 표시 장치 및 그의 제조 방법
KR20210016219A (ko) * 2019-08-02 2021-02-15 삼성디스플레이 주식회사 발광 소자, 이를 포함하는 표시 장치 및 표시 장치 제조 방법
KR20210024347A (ko) 2019-08-22 2021-03-05 삼성디스플레이 주식회사 표시 장치
KR20210027564A (ko) * 2019-08-28 2021-03-11 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
KR20210039521A (ko) * 2019-10-01 2021-04-12 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
KR20210044354A (ko) * 2019-10-14 2021-04-23 삼성디스플레이 주식회사 표시 장치
KR20210045572A (ko) * 2019-10-16 2021-04-27 삼성디스플레이 주식회사 표시 장치 및 그의 제조 방법
KR20210074458A (ko) * 2019-12-11 2021-06-22 삼성디스플레이 주식회사 표시장치 및 이를 포함하는 비디오 월 디스플레이시스템
KR20210074456A (ko) * 2019-12-11 2021-06-22 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
KR20210077864A (ko) * 2019-12-17 2021-06-28 삼성디스플레이 주식회사 표시 장치
KR20210081506A (ko) 2019-12-23 2021-07-02 삼성디스플레이 주식회사 표시 장치 및 그의 제조 방법
KR20210084789A (ko) * 2019-12-27 2021-07-08 삼성디스플레이 주식회사 표시 장치
KR20210107208A (ko) * 2020-02-21 2021-09-01 삼성디스플레이 주식회사 표시 장치
KR20210109699A (ko) 2020-02-27 2021-09-07 삼성디스플레이 주식회사 표시 장치 및 그의 제조 방법
KR20210111918A (ko) * 2020-03-03 2021-09-14 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
KR20210116833A (ko) 2020-03-17 2021-09-28 삼성디스플레이 주식회사 표시 장치 및 그의 제조 방법
KR20210148536A (ko) * 2020-05-29 2021-12-08 삼성디스플레이 주식회사 표시 장치 및 이의 제조 방법
WO2021258283A1 (zh) * 2020-06-23 2021-12-30 重庆康佳光电技术研究院有限公司 一种显示装置、子像素修复电路及其修复方法
KR20220014458A (ko) * 2020-07-28 2022-02-07 삼성디스플레이 주식회사 표시 장치
KR20220021947A (ko) * 2020-08-13 2022-02-23 삼성디스플레이 주식회사 표시 장치
KR20220030404A (ko) 2020-08-31 2022-03-11 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
KR20220033650A (ko) * 2020-09-09 2022-03-17 삼성디스플레이 주식회사 반사 전극 및 이를 포함하는 표시 장치
KR20220091703A (ko) 2020-12-23 2022-07-01 삼성디스플레이 주식회사 표시 장치
KR20220094255A (ko) * 2020-12-28 2022-07-06 삼성디스플레이 주식회사 표시 장치
KR20220147187A (ko) * 2021-04-26 2022-11-03 삼성디스플레이 주식회사 표시 장치
CN113270442B (zh) * 2021-06-30 2023-09-19 錼创显示科技股份有限公司 微型发光二极管显示设备
KR20230134636A (ko) * 2022-03-14 2023-09-22 삼성디스플레이 주식회사 화소 및 이를 포함한 표시 장치
KR20230134649A (ko) * 2022-03-14 2023-09-22 삼성디스플레이 주식회사 표시 장치

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4914929B1 (ko) 1968-05-13 1974-04-11
JPS4814394B1 (ko) 1968-12-06 1973-05-07
US3717806A (en) 1972-03-31 1973-02-20 R Sebring Ac-to-dc converter
JP4082242B2 (ja) * 2003-03-06 2008-04-30 ソニー株式会社 素子転写方法
JP4255480B2 (ja) * 2006-04-26 2009-04-15 株式会社沖データ 半導体複合装置、ledヘッド、及び画像形成装置
JP4203087B2 (ja) * 2006-07-25 2008-12-24 株式会社沖データ 半導体複合装置、ledプリントヘッド及び画像形成装置
KR20070050781A (ko) * 2006-07-27 2007-05-16 주식회사 대우일렉트로닉스 오엘이디 디스플레이 소자
JP2008147608A (ja) * 2006-10-27 2008-06-26 Canon Inc Ledアレイの製造方法とledアレイ、及びledプリンタ
KR100908045B1 (ko) * 2007-08-31 2009-07-15 (주)웨이브스퀘어 발광다이오드 소자의 제조 방법
JP5211352B2 (ja) * 2008-10-17 2013-06-12 国立大学法人北海道大学 半導体発光素子アレー、およびその製造方法
JP4724222B2 (ja) * 2008-12-12 2011-07-13 株式会社東芝 発光装置の製造方法
KR20110041401A (ko) 2009-10-15 2011-04-21 샤프 가부시키가이샤 발광 장치 및 그 제조 방법
JP4914929B2 (ja) 2009-10-15 2012-04-11 シャープ株式会社 発光装置およびその製造方法
US8872214B2 (en) 2009-10-19 2014-10-28 Sharp Kabushiki Kaisha Rod-like light-emitting device, method of manufacturing rod-like light-emitting device, backlight, illuminating device, and display device
JP4814394B2 (ja) 2010-03-05 2011-11-16 シャープ株式会社 発光装置の製造方法
KR20120138805A (ko) * 2010-03-12 2012-12-26 샤프 가부시키가이샤 발광 장치의 제조 방법, 발광 장치, 조명 장치, 백라이트, 액정 패널, 표시 장치, 표시 장치의 제조 방법, 표시 장치의 구동 방법 및 액정 표시 장치
KR101691906B1 (ko) * 2010-09-14 2017-01-02 삼성전자주식회사 Ⅲ족 질화물 나노로드 발광 소자 제조방법
US8951817B2 (en) * 2011-01-24 2015-02-10 Koninklijke Philips N.V. Light emitting device chip scale package
KR101244926B1 (ko) 2011-04-28 2013-03-18 피에스아이 주식회사 초소형 led 소자 및 그 제조방법
JP2015026417A (ja) * 2011-11-18 2015-02-05 シャープ株式会社 有機エレクトロルミネッセンス表示装置およびそれを用いた電子機器、並びに、有機エレクトロルミネッセンス表示装置の製造方法
US8921872B2 (en) * 2011-12-09 2014-12-30 Sony Corporation Display unit and method of manufacturing the same, electronic apparatus, illumination unit, and light-emitting device and method of manufacturing the same
US10804316B2 (en) * 2012-08-07 2020-10-13 Seoul Viosys Co., Ltd. Wafer level light-emitting diode array
US9773761B2 (en) 2013-07-09 2017-09-26 Psi Co., Ltd Ultra-small LED electrode assembly and method for manufacturing same
KR101436123B1 (ko) 2013-07-09 2014-11-03 피에스아이 주식회사 초소형 led를 포함하는 디스플레이 및 이의 제조방법
TWI467528B (zh) * 2013-10-30 2015-01-01 Au Optronics Corp 發光二極體顯示面板及其製作方法
US10121822B2 (en) * 2013-12-02 2018-11-06 Nanyang Technological University Light-emitting device and method of forming the same
KR101628345B1 (ko) * 2014-07-08 2016-06-09 피에스아이 주식회사 초소형 led 전극어셈블리의 제조방법
KR101672781B1 (ko) * 2014-11-18 2016-11-07 피에스아이 주식회사 수평배열 어셈블리용 초소형 led 소자, 이의 제조방법 및 이를 포함하는 수평배열 어셈블리
US9991415B2 (en) * 2014-11-26 2018-06-05 Sharp Kabushiki Kaisha Display device and method of producing display device
US20160254315A1 (en) * 2015-02-27 2016-09-01 Oki Data Corporation Semiconductor device, led head, and image forming apparatus
WO2016148424A1 (ko) * 2015-03-16 2016-09-22 서울바이오시스 주식회사 금속 벌크를 포함하는 발광 소자
KR101627365B1 (ko) * 2015-11-17 2016-06-08 피에스아이 주식회사 편광을 출사하는 초소형 led 전극어셈블리, 이의 제조방법 및 이를 포함하는 led 편광램프
KR101730929B1 (ko) * 2015-11-17 2017-04-28 피에스아이 주식회사 선택적 금속오믹층을 포함하는 초소형 led 전극어셈블리 제조방법
CN106887488B (zh) * 2015-12-15 2019-06-11 群创光电股份有限公司 发光二极管及使用此发光二极管所制得的显示装置
TWI581455B (zh) * 2016-01-29 2017-05-01 友達光電股份有限公司 發光裝置及發光裝置之製造方法
KR102651097B1 (ko) * 2016-10-28 2024-03-22 엘지디스플레이 주식회사 발광 다이오드 디스플레이 장치
KR102633079B1 (ko) * 2016-10-28 2024-02-01 엘지디스플레이 주식회사 발광 다이오드 디스플레이 장치
KR102605174B1 (ko) * 2016-12-19 2023-11-22 엘지디스플레이 주식회사 발광 다이오드 디스플레이 장치
CN106941108B (zh) * 2017-05-23 2019-09-17 深圳市华星光电技术有限公司 微发光二极管显示面板及其制作方法

Cited By (96)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10629791B2 (en) 2018-02-08 2020-04-21 Samsung Display Co., Ltd. Light emitting device and fabricating method thereof
US10971667B2 (en) 2018-02-08 2021-04-06 Samsung Display Co., Ltd. Light emitting device and fabricating method thereof
JP7242716B2 (ja) 2018-07-04 2023-03-20 三星ディスプレイ株式會社 表示装置
US11817474B2 (en) 2018-07-04 2023-11-14 Samsung Display Co., Ltd. Display device
EP3819940A4 (en) * 2018-07-04 2022-03-30 Samsung Display Co., Ltd. INDICATOR
JP2021529352A (ja) * 2018-07-04 2021-10-28 三星ディスプレイ株式會社Samsung Display Co.,Ltd. 表示装置
US11411044B2 (en) 2018-07-04 2022-08-09 Samsung Display Co., Ltd. Display device
JP2021529997A (ja) * 2018-07-06 2021-11-04 三星ディスプレイ株式會社Samsung Display Co.,Ltd. 表示装置およびその製造方法
EP3819942A4 (en) * 2018-07-06 2022-04-06 Samsung Display Co., Ltd. DISPLAY DEVICE AND METHOD OF MANUFACTURING IT
JP7328317B2 (ja) 2018-07-06 2023-08-16 三星ディスプレイ株式會社 表示装置およびその製造方法
EP3823050A4 (en) * 2018-07-10 2022-04-06 Samsung Display Co., Ltd. LIGHT EMITTING DEVICE AND DISPLAY DEVICE THEREOF
US20210272937A1 (en) * 2018-07-10 2021-09-02 Samsung Display Co., Ltd. Light-emitting device and display device comprising same
CN112400233A (zh) * 2018-07-18 2021-02-23 三星显示有限公司 显示装置及用于制造显示装置的方法
EP3826065A4 (en) * 2018-07-18 2022-04-20 Samsung Display Co., Ltd. DISPLAY DEVICE AND METHOD OF MANUFACTURING IT
US20210272938A1 (en) * 2018-07-18 2021-09-02 Samsung Display Co., Ltd. Display device and method for manufacturing display device
EP3828937A4 (en) * 2018-07-24 2022-05-18 Samsung Display Co., Ltd. DISPLAY DEVICE AND METHOD OF MANUFACTURING IT
US20210280746A1 (en) * 2018-07-24 2021-09-09 Samsung Display Co., Ltd. Display device and manufacturing method therefor
EP3832739A4 (en) * 2018-07-30 2022-04-27 Samsung Display Co., Ltd. ELECTROLUMINESCENT DEVICE AND DISPLAY DEVICE COMPRISING IT
US11682693B2 (en) 2018-08-06 2023-06-20 Samsung Display Co., Ltd. Display device
EP3836217A4 (en) * 2018-08-07 2022-05-11 Samsung Display Co., Ltd. DISPLAY DEVICE AND METHOD OF MANUFACTURING IT
US11870024B2 (en) 2018-08-07 2024-01-09 Samsung Display Co., Ltd. Display device and method for manufacturing the display device having a bridge pattern provided in a peripheral area
EP3848969A4 (en) * 2018-09-03 2022-06-01 Samsung Display Co., Ltd. LIGHT EMITTING DEVICE AND DISPLAY DEVICE THEREOF
US20220037299A1 (en) * 2018-09-21 2022-02-03 Samsung Display Co., Ltd. Display device and method of manufacturing the same
EP3855500A4 (en) * 2018-09-21 2022-06-29 Samsung Display Co., Ltd. Display device and manufacturing method therefor
EP3855494A4 (en) * 2018-09-21 2022-06-15 Samsung Display Co., Ltd. DISPLAY DEVICE AND METHOD OF MANUFACTURING IT
EP3863058A4 (en) * 2018-10-01 2022-07-06 Samsung Display Co., Ltd. DISPLAY DEVICE AND METHOD OF MANUFACTURE THEREOF
US20210343783A1 (en) * 2018-10-02 2021-11-04 Samsung Display Co., Ltd. Display device
US11783764B2 (en) 2018-10-08 2023-10-10 Samsung Display Co., Ltd. Pixel, display device having same and driving method thereof
US11488520B2 (en) 2018-10-08 2022-11-01 Samsung Display Co., Ltd. Pixel, display device having same and driving method thereof
EP3866151A4 (en) * 2018-10-08 2022-06-29 Samsung Display Co., Ltd. Pixel, display device having same and driving method thereof
KR102568250B1 (ko) * 2018-10-08 2023-08-22 삼성디스플레이 주식회사 화소, 이를 구비한 표시 장치 및 그의 구동 방법
KR20200040347A (ko) * 2018-10-08 2020-04-20 삼성디스플레이 주식회사 화소, 이를 구비한 표시 장치 및 그의 구동 방법
CN112840458A (zh) * 2018-10-10 2021-05-25 三星显示有限公司 显示装置
US20210359165A1 (en) * 2018-10-11 2021-11-18 Samsung Display Co., Ltd. Light-emitting device, method for producing same, and display device including same
EP3866203A4 (en) * 2018-10-11 2022-07-06 Samsung Display Co., Ltd. ELECTROLUMINESCENT DEVICE, METHOD FOR MANUFACTURING IT AND DISPLAY DEVICE COMPRISING IT
CN112913021A (zh) * 2018-10-16 2021-06-04 三星显示有限公司 显示设备
US11837583B2 (en) * 2018-11-15 2023-12-05 Samsung Display Co., Ltd. Display device and method for manufacturing display device
US20220059513A1 (en) * 2018-11-15 2022-02-24 Samsung Display Co., Ltd. Display device and method for manufacturing display device
EP3886172A4 (en) * 2018-11-21 2022-08-17 Samsung Display Co., Ltd. LIGHT EMITTING DEVICE AND DISPLAY DEVICE THEREOF
CN113169206A (zh) * 2018-11-21 2021-07-23 三星显示有限公司 发光器件和具有该发光器件的显示装置
EP3890020A4 (en) * 2018-11-26 2022-08-17 Samsung Display Co., Ltd. INDICATOR
US11935988B2 (en) 2018-11-26 2024-03-19 Samsung Display Co., Ltd. Display device
EP3890015A4 (en) * 2018-11-27 2022-08-24 Samsung Display Co., Ltd. DISPLAY DEVICE AND ASSOCIATED METHOD OF MANUFACTURING
US11211534B2 (en) * 2018-12-04 2021-12-28 Samsung Display Co., Ltd. Display device and method of fabricating the same
CN113169212A (zh) * 2018-12-07 2021-07-23 三星显示有限公司 显示装置及其制造方法
CN113228289A (zh) * 2018-12-24 2021-08-06 三星显示有限公司 显示装置及其修复方法
EP3905331A4 (en) * 2018-12-24 2022-09-28 Samsung Display Co., Ltd. INDICATOR AND REPAIR METHOD THEREOF
EP3910676A4 (en) * 2019-01-07 2022-10-05 Samsung Display Co., Ltd. DISPLAY DEVICE AND METHOD OF MANUFACTURING IT
EP3913677A4 (en) * 2019-01-15 2022-10-19 Samsung Display Co., Ltd. INDICATOR
EP3937248A4 (en) * 2019-04-08 2022-12-28 Samsung Display Co., Ltd. PIXEL, DISPLAY DEVICE COMPRISING THE SAME AND METHOD OF MANUFACTURING THEREOF
EP3958317A4 (en) * 2019-04-16 2023-01-25 Samsung Display Co., Ltd. DISPLAY DEVICE AND METHOD OF MANUFACTURE THEREOF
US20220181522A1 (en) * 2019-04-16 2022-06-09 Samsung Display Co., Ltd. Display device and method for manufacturing same
EP3968383A4 (en) * 2019-05-07 2023-01-25 Samsung Display Co., Ltd. PIXEL AND DISPLAY DEVICE COMPRISING THEM
EP3985734A4 (en) * 2019-06-17 2023-07-05 Samsung Display Co., Ltd. DISPLAY DEVICE AND METHOD OF MANUFACTURE THEREOF
EP3989285A4 (en) * 2019-06-21 2023-07-19 Samsung Display Co., Ltd. DISPLAY DEVICE AND METHOD OF MANUFACTURING IT
EP4027391A4 (en) * 2019-09-05 2023-10-18 Samsung Display Co., Ltd. DISPLAY DEVICE AND METHOD FOR MANUFACTURING SAME
EP4033545A4 (en) * 2019-09-16 2023-10-25 Samsung Display Co., Ltd. LIGHT EMITTING DIODE AND DISPLAY DEVICE THEREOF
US11393798B2 (en) * 2019-09-23 2022-07-19 Samsung Display Co., Ltd. Display device
US11676947B2 (en) 2019-10-24 2023-06-13 Boe Technology Group Co., Ltd. Driving substrate, method for preparing the same, and display device
EP4050406A4 (en) * 2019-10-24 2022-11-02 BOE Technology Group Co., Ltd. CONTROL SUBSTRATE, METHOD FOR MAKING IT AND DISPLAY APPARATUS
US11967585B2 (en) * 2019-11-04 2024-04-23 Samsung Display Co., Ltd. Electrodes for light emitting element of a display device
US20210134769A1 (en) * 2019-11-04 2021-05-06 Samsung Display Co., Ltd. Display device
US11855055B2 (en) * 2019-11-08 2023-12-26 Samsung Display Co., Ltd. Display device
US20220384401A1 (en) * 2019-11-08 2022-12-01 Samsung Display Co., Ltd. Display device
EP3828930A3 (en) * 2019-11-26 2022-01-12 Samsung Display Co., Ltd. Display device
US11798954B2 (en) 2019-11-26 2023-10-24 Samsung Display Co., Ltd. Display device
US11450268B2 (en) * 2019-12-16 2022-09-20 Samsung Display Co., Ltd. Display device and fabricating method for display device
US20210202452A1 (en) * 2019-12-30 2021-07-01 Samsung Display Co., Ltd. Display device and method of manufacturing the same
US20210202803A1 (en) * 2019-12-30 2021-07-01 Samsung Display Co., Ltd. Display device and method of manufacturing the same
US11842988B2 (en) * 2019-12-30 2023-12-12 Samsung Display Co., Ltd. Display device and method of manufacturing the same
US11749788B2 (en) * 2019-12-30 2023-09-05 Samsung Display Co., Ltd. Display device and method of manufacturing the same
US20210242381A1 (en) * 2020-01-30 2021-08-05 Samsung Display Co., Ltd. Display device and method of manufacturing the same
US20210257349A1 (en) * 2020-02-17 2021-08-19 Samsung Display Co., Ltd. Display device
EP3866195A3 (en) * 2020-02-17 2021-10-13 Samsung Display Co., Ltd. Display device
US20210280632A1 (en) * 2020-03-03 2021-09-09 Samsung Display Co., Ltd. Display device and method of fabricating the same
US11705477B2 (en) * 2020-03-03 2023-07-18 Samsung Display Co., Ltd. Display device and method of fabricating the same
US20210288104A1 (en) * 2020-03-11 2021-09-16 Samsung Display Co., Ltd. Display device and manufacturing method thereof
US11362250B2 (en) * 2020-04-03 2022-06-14 Samsung Display Co., Ltd. Display device
US20220310895A1 (en) * 2020-04-03 2022-09-29 Samsung Display Co., Ltd. Display device
US11870025B2 (en) * 2020-04-03 2024-01-09 Samsung Display Co., Ltd. Display device
EP3910671A1 (en) * 2020-05-13 2021-11-17 Samsung Display Co., Ltd. Display device
US20210359049A1 (en) * 2020-05-13 2021-11-18 Samsung Display Co., Ltd. Display device
US20210367109A1 (en) * 2020-05-21 2021-11-25 Samsung Display Co., Ltd. Display device
US11984537B2 (en) * 2020-06-22 2024-05-14 Samsung Display Co., Ltd. Display device
US20210399177A1 (en) * 2020-06-22 2021-12-23 Samsung Display Co., Ltd. Display device
US20210407970A1 (en) * 2020-06-30 2021-12-30 Samsung Display Co., Ltd. Pixel and display device having the same
US20220020734A1 (en) * 2020-07-15 2022-01-20 Samsung Display Co., Ltd. Display device and method of fabricating the same
US20220069164A1 (en) * 2020-08-31 2022-03-03 Samsung Display Co., Ltd. Light-emitting element, method of manufacturing light-emitting element, and display device including light-emitting element
EP3965152B1 (en) * 2020-09-07 2024-05-01 Samsung Display Co., Ltd. Display device
US20220109085A1 (en) * 2020-10-05 2022-04-07 Samsung Display Co., Ltd. Display device and manufacturing method thereof
EP3982430A1 (en) * 2020-10-08 2022-04-13 Samsung Display Co., Ltd. Display device
US11844244B2 (en) * 2020-11-03 2023-12-12 Samsung Display Co., Ltd. Display device having a first contact electrode and a second contact electrode
US20220140024A1 (en) * 2020-11-03 2022-05-05 Samsung Display Co., Ltd. Display device and method of manufacturing the same
US20220209071A1 (en) * 2020-12-30 2022-06-30 Samsung Display Co., Ltd. Display device and manufacturing method thereof
CN113745266A (zh) * 2021-02-09 2021-12-03 友达光电股份有限公司 显示装置
EP4060736A1 (en) * 2021-03-16 2022-09-21 Samsung Display Co., Ltd. Display device

Also Published As

Publication number Publication date
US20230187474A1 (en) 2023-06-15
KR20230147570A (ko) 2023-10-23
US11581363B2 (en) 2023-02-14
US10461123B2 (en) 2019-10-29
KR20180072909A (ko) 2018-07-02
KR102587215B1 (ko) 2023-10-12
US20200058701A1 (en) 2020-02-20
US20180175009A1 (en) 2018-06-21

Similar Documents

Publication Publication Date Title
US11581363B2 (en) Light emitting device and display device including the same
US11811012B2 (en) Light-emitting device, display device having same, and method for manufacturing same
US11776973B2 (en) Method of manufacturing display device
US20210265529A1 (en) Light emitting device and fabricating method thereof
KR102568252B1 (ko) 발광 장치 및 그의 제조방법
US20210288217A1 (en) Light-emitting device, manufacturing method therefor, and display device comprising same
US11393964B2 (en) Plurality of contact electrode connected to a light emitting element
US20210305222A1 (en) Light-emitting device, method for manufacturing same, and display device comprising same
EP3823049B1 (en) Light emitting apparatus, manufacturing method thereof, and display apparatus provided therewith
US11462518B2 (en) Display device
US20210202810A1 (en) Display device and manufacturing method thereof
US11411143B2 (en) Light emitting device and method of fabricating the same
US11600756B2 (en) Display device with bank pattern
CN113994472A (zh) 显示装置及其制造方法
US11626389B2 (en) Display device
US20230070620A1 (en) Display device
US11495713B2 (en) Pixel and display device including the same
US20230284399A1 (en) Display device

Legal Events

Date Code Title Description
STCB Information on status: application discontinuation

Free format text: EXPRESSLY ABANDONED -- DURING EXAMINATION