US20080024416A1 - Liquid crystal display device - Google Patents

Liquid crystal display device Download PDF

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Publication number
US20080024416A1
US20080024416A1 US11/878,579 US87857907A US2008024416A1 US 20080024416 A1 US20080024416 A1 US 20080024416A1 US 87857907 A US87857907 A US 87857907A US 2008024416 A1 US2008024416 A1 US 2008024416A1
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US
United States
Prior art keywords
electric potential
liquid crystal
common electric
display device
crystal display
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US11/878,579
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English (en)
Inventor
Tomohide Onogi
Yasuo Segawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Display Inc
Original Assignee
Epson Imaging Devices Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Epson Imaging Devices Corp filed Critical Epson Imaging Devices Corp
Assigned to EPSON IMAGING DEVICES CORPORATION reassignment EPSON IMAGING DEVICES CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: ONOGI, TOMOHIDE, SEGAWA, YASUO
Publication of US20080024416A1 publication Critical patent/US20080024416A1/en
Assigned to SONY CORPORATION reassignment SONY CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: EPSON IMAGING DEVICES CORPORATION
Priority to US13/493,618 priority Critical patent/US9291863B2/en
Assigned to Japan Display West Inc. reassignment Japan Display West Inc. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: SONY CORPORATION
Assigned to JAPAN DISPLAY INC. reassignment JAPAN DISPLAY INC. CHANGE OF NAME (SEE DOCUMENT FOR DETAILS). Assignors: Japan Display West Inc.
Priority to US15/134,677 priority patent/US10126608B2/en
Priority to US15/162,110 priority patent/US9946125B2/en
Priority to US15/423,209 priority patent/US10126609B2/en
Priority to US16/163,794 priority patent/US10802353B2/en
Priority to US16/521,228 priority patent/US11543708B2/en
Priority to US16/521,247 priority patent/US10606133B2/en
Priority to US16/995,368 priority patent/US11143923B2/en
Priority to US17/068,039 priority patent/US11698555B2/en
Priority to US18/196,725 priority patent/US12019339B2/en
Priority to US18/674,187 priority patent/US12360422B2/en
Abandoned legal-status Critical Current

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G—PHYSICS
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
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    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G—PHYSICS
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
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    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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    • H—ELECTRICITY
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    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
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    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H10D86/443—Interconnections, e.g. scanning lines adapted for preventing breakage, peeling or short circuiting
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
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    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
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    • G02F2201/121—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode common or background
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    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
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    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
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    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/103—Materials and properties semiconductor a-Si
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor
    • G02F2202/104—Materials and properties semiconductor poly-Si

Definitions

  • This invention relates to a liquid crystal display device, specifically to a liquid crystal display device in which an alignment direction of liquid crystal molecules is controlled by a lateral electric field generated between a pixel electrode and a common electrode.
  • IPS In-Plane Switching
  • FFS Fringe-Field Switching
  • FIGS. 18A through 20B show the manufacturing process of one pixel in the liquid crystal display device according to the FFS technology.
  • FIGS. 18A , 19 A and 20 A are plan views of a part of a display region in the liquid crystal display device.
  • Each of FIGS. 18B , 19 B and 20 B is a cross-sectional view showing a section A-A in each of FIGS. 18A , 19 A and 20 A, respectively.
  • a large number of pixels are disposed in a matrix form in the display region in the actual liquid crystal display device, only three pixels are shown in each of the plan views.
  • a buffer layer 11 which is made of a silicon dioxide (SiO 2 ) film or a silicon nitride (SiNx) film, and an amorphous silicon layer are successively formed by CVD (Chemical Vapor Deposition) on a TFT substrate 10 , which is made of a glass substrate or the like, as shown in FIG. 18B .
  • the amorphous silicon layer is crystallized and transformed into a polysilicon layer by excimer laser annealing.
  • the polysilicon layer is patterned to form a U-shaped active layer 12 of a thin film transistor 1 (hereafter referred to as TFT 1 ).
  • a gate insulation film 13 is formed to cover the active layer 12 .
  • a gate line 14 made of chromium, molybdenum or the like is formed on the gate insulation film 13 overlapping the active layer 12 .
  • the gate line 14 extends in a row direction, and intersects the active layer 12 at two locations.
  • a gate signal that controls turning on/off of the TFT 1 is applied to the gate line 14 .
  • an auxiliary common electrode line 15 that is made of the same material as the gate line 14 and is for providing a common electric potential Vcom, is formed parallel to the gate line 14 .
  • an interlayer insulation film 16 that covers the TFT 1 and the auxiliary common electrode line 15 .
  • contact holes CH 1 and CH 2 which expose a source region 12 s and a drain region 12 d in the active layer 12 , respectively, are formed in the interlayer insulation film 16 .
  • a contact hole CH 3 that exposes the auxiliary common electrode line 15 , is formed in the interlayer insulation film 16 .
  • a source electrode 17 that is connected with the source region 12 s through the contact hole CH 1 , a display signal line 18 that is connected with the drain region 12 d through the contact hole CH 2 , and a pad electrode 19 that is connected with the auxiliary common electrode line 15 through the contact hole CH 3 .
  • the source electrode 17 , the display signal line 18 and the pad electrode 19 are made of metal including aluminum or aluminum alloy or the like.
  • a planarization film 20 is formed over the entire surface. Contact holes CH 4 and CH 5 , that expose the source electrode 17 and the pad electrode 19 respectively, are formed in the planarization film 20 .
  • the pixel electrode 21 is made of a first layer transparent electrode such as ITO (Indium Tin Oxide), and is applied a display signal Vsig from the display signal line 18 through the TFT 1 .
  • ITO Indium Tin Oxide
  • an insulation film 22 is formed to cover the pixel electrode 21 , as shown in FIG. 20B .
  • a contact hole CH 6 that exposes the pad electrode 19 , is formed by etching the insulation film 22 .
  • a common electrode 23 that has a plurality of slits S, is formed on the pixel electrode 21 through the insulation film 22 .
  • the common electrode 23 is made of a second layer transparent electrode such as ITO, and is connected with the pad electrode 19 through the contact hole CH 6 .
  • a counter substrate 30 made of a glass substrate or the like is disposed facing the TFT substrate 10 .
  • a polarizing plate 31 is attached to the counter substrate 30 .
  • a polarizing plate 32 is attached to a back surface of the TFT substrate 10 .
  • the polarizing plates 31 and 32 are disposed in a way that their polarization axes are perpendicular to each other.
  • a liquid crystal 40 is sealed-in between the TFT substrate 10 and the counter substrate 30 .
  • an average alignment direction (hereafter simply referred to as “alignment direction”) of major axes of the liquid crystal molecules of the liquid crystal 40 is parallel to the polarization axis of the polarizing plate 32 when a display voltage is not applied to the pixel electrode 21 (no voltage state).
  • alignment direction linearly polarized light passing through the liquid crystal 40 does not go through the polarizing plate 31 because its polarization axis is perpendicular to the polarization axis of the polarizing plate 31 . That is, black is displayed.
  • the common electrode 23 when the common electrode 23 is insufficiently provided with the common electric potential Vcom because of an influence of electric resistance, the voltage applied to the liquid crystal 40 is reduced to cause degradation in quality of display such as reduced contrast. Since the common electrode 23 is formed of the transparent electrode such as ITO that has higher sheet resistivity than ordinary metal, the degradation in the quality of display is prone to be caused. This problem becomes evident particularly as a panel size of the liquid crystal display device becomes larger. Therefore, in order to provide the common electrode 23 with the common electric potential Vcom sufficiently, the auxiliary common electrode line 15 that supplies the common electric potential Vcom is disposed within the display region and the auxiliary common electrode line 15 is connected with the common electrode 23 in each of the pixels in the conventional liquid crystal display device.
  • This invention is directed to offer a liquid crystal display device capable of securely providing the common electrode with the common electric potential sufficiently and improving the aperture ratio of the pixels to obtain a bright display.
  • a liquid crystal display device of this invention includes a substrate; a plurality of pixels disposed in a display region on the substrate, each of the pixels including a pixel electrode and a common electrode having a plurality of slits and disposed on the pixel electrode through an insulation film and extending over the plurality of the pixels; and a peripheral common electric potential line provided with a common electric potential and disposed on a periphery of the display region, wherein an end of the common electrode is connected with the peripheral common electric potential line.
  • FIG. 1 is a plan view showing a portion of a display region in a liquid crystal display device according to a first embodiment of this invention.
  • FIG. 2 is a cross-sectional view showing a section X 1 -X 1 in FIG. 1 .
  • FIG. 3 shows a first layout of the liquid crystal display device according to the first embodiment of this invention.
  • FIG. 4 shows a second layout of the liquid crystal display device according to the first embodiment of this invention.
  • FIG. 5 shows a third layout of the liquid crystal display device according to the first embodiment of this invention.
  • FIG. 6 shows a fourth layout of the liquid crystal display device according to the first embodiment of this invention.
  • FIG. 7 shows a fifth layout of the liquid crystal display device according to the first embodiment of this invention.
  • FIG. 8 shows a sixth layout of the liquid crystal display device according to the first embodiment of this invention.
  • FIG. 9 is a plan view showing a portion of a display region in a liquid crystal display device according to a second embodiment of this invention.
  • FIG. 10 is a cross-sectional view showing a section X 2 -X 2 in FIG. 9 .
  • FIG. 11 is a cross-sectional view showing a section Y 1 -Y 1 in FIG. 9 .
  • FIG. 12 is a plan view showing a portion of a display region in a liquid crystal display device according to a third embodiment of this invention.
  • FIG. 13 is a cross-sectional view showing a section X 3 -X 3 in FIG. 12 .
  • FIG. 14 is a cross-sectional view showing a section Y 2 -Y 2 in FIG. 12 .
  • FIG. 15 is a plan view showing a portion of a display region in a liquid crystal display device according to a fourth embodiment of this invention.
  • FIG. 16 is a cross-sectional view showing a section X 4 -X 4 in FIG. 15 .
  • FIG. 17 is a cross-sectional view showing a section Y 3 -Y 3 in FIG. 15 .
  • FIGS. 18A and 18B are for explanation of a structure and a manufacturing method of a liquid crystal display device according to a conventional art.
  • FIGS. 19A and 19B are for explanation of the structure and the manufacturing method of the liquid crystal display device according to the conventional art.
  • FIGS. 20A and 20B are for explanation of the structure and the manufacturing method of the liquid crystal display device according to the conventional art.
  • FIG. 1 is a plan view showing a portion of a display region in the liquid crystal display device.
  • FIG. 2 is a cross-sectional view showing a section X 1 -X 1 in FIG. 1 . Although a large number of pixels are disposed in a matrix form in the display region 70 in the actual liquid crystal display device, only three pixels are shown in the plan view.
  • a pixel electrode 21 is formed of a first layer transparent electrode.
  • a common electrode 23 A made of a second layer transparent electrode is formed above the pixel electrode 21 interposing an insulation film 22 between them.
  • the common electrode 23 A in an upper layer is provided with a plurality of slits S.
  • the structures described above are generally common to the structure shown in FIGS. 20A and 20B . In the embodiment, however, the common electrode 23 A extends over all the pixels in the display region 70 .
  • An end of the common electrode 23 A is disposed on a periphery of the display region 70 and connected with a peripheral common electric potential line 50 that provides a common electric potential Vcom.
  • the peripheral common electric potential line 50 is formed of a layer same as a layer forming a display signal line 18 and is made of metal including aluminum or aluminum alloy or the like.
  • the peripheral common electric potential line 50 is formed on an interlayer insulation film 16 .
  • the common electrode 23 A is connected with the peripheral common electric potential line 50 through a contact hole CH 7 that is formed in a planarization film 20 and the insulation film 22 formed on the peripheral common electric potential line 50 .
  • the peripheral common electric potential line 50 is connected with a terminal (not shown) on a TFT substrate 10 .
  • the common electric potential Vcom is supplied from an IC or the like outside the TFT substrate 10 through the terminal.
  • the liquid crystal display device is provided with neither the auxiliary common electrode line 15 nor the pad electrode 19 , which is provided in the conventional liquid crystal display device. As a result, the aperture ratio of the pixel is improved. Also the common electric potential Vcom is sufficiently supplied to the common electrode 23 A through a low resistance, since the common electrode 23 A extends over all the pixels in the display region 70 and its end is connected with the peripheral common electric potential line 50 .
  • the peripheral common electric potential line 50 is disposed on the periphery of the display region 70 along a side of the rectangular display region 70 in a first layout shown in FIG. 3 .
  • the peripheral common electric potential line 50 is disposed along each of two sides of the display region 70 facing each other and that the peripheral common electric potential line 50 on each side is connected with each end of the common electrode 23 A, respectively, as in a second layout shown in FIG. 4 .
  • the peripheral common electric potential line 50 may be disposed along each of two adjacent sides of the display region 70 , as in a third layout shown in FIG. 5 .
  • the peripheral common electric potential line 50 is disposed along each of three sides of the display region 70 and that the peripheral common electric potential line 50 on each side is connected with each end of the common electrode 23 A, as in a fourth layout shown in FIG. 6 .
  • the peripheral common electric potential line 50 is disposed along each of four sides of the display region 70 and that the peripheral common electric potential line 50 on each side is connected with each end of the common electrode 23 A, as in a fifth layout shown in FIG. 7 .
  • the peripheral common electric potential line 50 and the display signal line 18 are formed of the same layer, it is necessary that either the layer forming the peripheral common electric potential line 50 or the layer forming the display signal line 18 is partially modified to form a bridge at an intersection of the peripheral common electric potential line 50 and the display signal line 18 in order to avoid a short circuit, as shown in a portion surrounded by a dashed line in FIG. 7 .
  • the display signal line 18 is modified into the same layer as the gate line 14 at the intersection.
  • the gate line 14 crosses the peripheral common electric potential line 50 without causing a short circuit, because it is formed of the layer different from the layer forming the peripheral common electric potential line 50 .
  • the bridge and the crossing as described above can be avoided by disposing circuits serving as the signal sources in a region surrounded by the peripheral common electric potential line 50 , as shown in FIG. 8 . That is, a display signal line control circuit 61 that provides the display signal line 18 with the display signal and a gate line control circuit 62 that provides the gate line 14 with the gate signal are disposed in a region between the display region 70 and the peripheral common electric potential line 50 .
  • FIG. 9 is a plan view showing a portion of a display region in the liquid crystal display device.
  • FIG. 10 is a cross-sectional view showing a section X 2 -X 2 in FIG. 9 .
  • FIG. 11 is a cross-sectional view showing a section Y 1 -Y 1 in FIG. 9 .
  • a large number of pixels are disposed in a matrix form in the display region in the actual liquid crystal display device, only three pixels are shown in the plan view.
  • a relationship between vertical locations of the pixel electrode 21 and the common electrode 23 A in the liquid crystal display device according to the first embodiment is reversed in the liquid crystal display device according to the second embodiment.
  • a common electrode 23 B is formed of the first layer transparent electrode and a pixel electrode 21 B is formed of the second layer transparent electrode above it interposing the insulation film 22 between them.
  • the pixel electrode 21 B in an upper layer is provided with a plurality of slits S.
  • the pixel electrodes 21 B are separated from each other and each of the pixel electrodes 21 Bis connected with a source electrode 17 of a TFT 1 in the same pixel.
  • the common electrode 23 B extends over all the pixels in the display region 70 as in the liquid crystal display device according to the first embodiment. An end of the common electrode 23 B is disposed on a periphery of the display region 70 and connected with a peripheral common electric potential line 50 that provides a common electric potential Vcom.
  • the peripheral common electric potential line 50 is formed of the same layer as a display signal line 18 and is made of metal including aluminum or aluminum alloy or the like.
  • the peripheral common electric potential line 50 is formed on an interlayer insulation film 16 .
  • the common electrode 23 B is connected with the peripheral common electric potential line 50 through a contact hole CH 8 that is formed in a planarization film 20 and the insulation film 22 formed on the peripheral common electric potential line 50 .
  • the peripheral common electric potential line 50 is connected with a terminal (not shown) on a TFT substrate 10 .
  • the common electric potential Vcom is supplied from an IC or the like outside a TFT substrate 10 through the terminal.
  • the TFT 1 in the pixel in the liquid crystal display device according to the first and second embodiments is a polysilicon TFT that has an active layer made of polysilicon.
  • an amorphous silicon TFT 1 a (hereafter referred to as aSi-TFT 1 a ) that has an active layer made of amorphous silicon is used in the liquid crystal display device according to the third embodiment.
  • FIG. 12 is a plan view showing a portion of a display region in the liquid crystal display device.
  • FIG. 13 is a cross-sectional view showing a section X 3 -X 3 in FIG. 12 .
  • FIG. 14 is a cross-sectional view showing a section Y 2 -Y 2 in FIG. 12 .
  • Agate line 114 of the aSi-TFT 1 a is formed on aTFT substrate 100 .
  • the gate line 114 is formed of chromium, molybdenum or the like.
  • a common electrode 123 B extending over a plurality of pixels is formed in a shape of stripes in regions except for the gate line 114 .
  • the common electrode 123 B is made of a first layer transparent electrode such as ITO.
  • a gate insulation film 101 is formed to cover the gate line 114 and the common electrode 123 B.
  • An amorphous silicon layer 102 is formed on the gate insulation film 101 to cover the gate line 114 .
  • a display signal line 118 (drain electrode) and a source electrode 103 are formed in contact with the amorphous silicon layer 102 .
  • An interlayer insulation film 104 is formed over the entire surface and the interlayer insulation film 104 on the source electrode 103 is selectively etched to form a contact hole CH 12 .
  • a pixel electrode 121 B that is connected with the source electrode 103 through the contact hole CH 12 .
  • the pixel electrode 121 B is made of a second layer transparent electrode such as ITO and has a plurality of slits S.
  • the pixel electrode 121 B is formed above the common electrode 123 B, interposing the gate insulation film 101 and the interlayer insulation film 104 between them.
  • An end of the common electrode 123 B is disposed on a periphery of the display region 70 and connected with a peripheral common electric potential line 150 that provides a common electric potential Vcom.
  • a cross-sectional structure of the connecting portion is shown in FIG. 13 .
  • the peripheral common electric potential line 150 is formed of the same layer as a display signal line 118 and is made of metal including aluminum or aluminum alloy or the like.
  • the peripheral common electric potential line 150 is formed on the gate insulation film 101 .
  • the common electrode 123 B is connected with the peripheral common electric potential line 150 through a connection wiring 119 that is made of the second layer transparent electrode and extending through a contact hole CH 13 formed in the gate insulation film 101 and the interlayer insulation film 104 above the common electrode 123 B and a contact hole CH 14 formed in the interlayer insulation film 104 above the peripheral common electric potential line 150 .
  • the peripheral common electric potential line 150 is connected with a terminal (not shown) on the TFT substrate 100 .
  • the common electric potential Vcom is supplied from an IC or the like outside the TFT substrate 100 through the terminal.
  • the counter substrate is disposed so as to face the TFT substrate 100 and that the liquid crystal is sealed-in between the TFT substrate 100 and the counter substrate are the same as in the first and second embodiments, and detailed explanations are omitted.
  • auxiliary common electrode line 15 nor the pad electrode 19 is provided in the liquid crystal display device according to the third embodiment, as in the liquid crystal display devices according to the first and second embodiments.
  • the aperture ratio of the pixel is improved.
  • the common electric potential Vcom is sufficiently supplied to the common electrode 123 B through a low resistance, since the common electrode 123 B extends over all the pixels in the display region 70 and its end is connected with the peripheral common electric potential line 150 .
  • the layouts shown in FIG. 3 through FIG. 8 can be applied to a layout of the peripheral common electric potential line 150 and the common electrode 123 B to obtain the same effects.
  • FIG. 15 is a plan view showing a portion of a display region in the liquid crystal display device.
  • FIG. 16 is a cross-sectional view showing a section X 4 -X 4 in FIG. 15 .
  • FIG. 16 is a cross-sectional view showing a section Y 3 -Y 3 in FIG. 15 .
  • a large number of pixels are disposed in a matrix form in the display region in the actual liquid crystal display device, only three pixels are shown in the plan view.
  • a relationship between vertical locations of the pixel electrode 121 B and the common electrode 123 B in the liquid crystal display device according to the third embodiment is reversed in the liquid crystal display device according to the fourth embodiment.
  • a pixel electrode 121 A is formed of a first layer transparent electrode and a common electrode 123 A is formed of a second layer transparent electrode above it interposing a gate insulation film 101 and an interlayer insulation film 104 between them in the liquid crystal display device according to the fourth embodiment.
  • the common electrode 123 A in an upper layer is provided with a plurality of slits S.
  • An end of the common electrode 123 A is disposed on a periphery of the display region 70 and connected with a peripheral common electric potential line 150 that provides a common electric potential Vcom.
  • a cross-sectional structure of the connecting portion is shown in FIG. 16 .
  • the peripheral common electric potential line 150 is formed of the same layer as a display signal line 118 and is made of metal including aluminum or aluminum alloy or the like.
  • the peripheral common electric potential line 150 is formed on the gate insulation film 101 .
  • the common electrode 123 A is connected with the peripheral common electric potential line 150 through a contact hole CH 15 formed in the interlayer insulation film 104 above the peripheral common electric potential line 150 .
  • Other structures are the same as those in the liquid crystal display device according to the third embodiment.
  • the slits S may extend over a plurality of pixels although the slits S in the common electrode 23 A or 123 A are formed within a single pixel in the liquid crystal display devices according to the first through fourth embodiments.
  • the pixel electrodes 21 B and 121 B may have a comb-shaped slit S that is open at one end.
  • the auxiliary common electrode line in the display region can be removed to improve the aperture ratio of the pixel, since the common electrode is provided with the common electric potential through the peripheral common electric potential line disposed on the periphery of the display region.
  • the common electrode can be sufficiently provided with the common electric potential through the low resistance, because the common electrode is disposed to extend over the plurality of pixels and connected with the peripheral common electric potential line.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
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US11/878,579 2006-07-27 2007-07-25 Liquid crystal display device Abandoned US20080024416A1 (en)

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US13/493,618 US9291863B2 (en) 2006-07-27 2012-06-11 Liquid crystal display device
US15/134,677 US10126608B2 (en) 2006-07-27 2016-04-21 Liquid crystal display device
US15/162,110 US9946125B2 (en) 2006-07-27 2016-05-23 Liquid crystal display device
US15/423,209 US10126609B2 (en) 2006-07-27 2017-02-02 Liquid crystal display device
US16/163,794 US10802353B2 (en) 2006-07-27 2018-10-18 Liquid crystal display device
US16/521,247 US10606133B2 (en) 2006-07-27 2019-07-24 Liquid crystal display device
US16/521,228 US11543708B2 (en) 2006-07-27 2019-07-24 Display device including common line display device including common line
US16/995,368 US11143923B2 (en) 2006-07-27 2020-08-17 Display device
US17/068,039 US11698555B2 (en) 2006-07-27 2020-10-12 Display device
US18/196,725 US12019339B2 (en) 2006-07-27 2023-05-12 Display device
US18/674,187 US12360422B2 (en) 2006-07-27 2024-05-24 Display device

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US15/134,677 Continuation US10126608B2 (en) 2006-07-27 2016-04-21 Liquid crystal display device
US15/162,110 Continuation US9946125B2 (en) 2006-07-27 2016-05-23 Liquid crystal display device

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US13/493,618 Active US9291863B2 (en) 2006-07-27 2012-06-11 Liquid crystal display device
US15/134,677 Active 2027-09-11 US10126608B2 (en) 2006-07-27 2016-04-21 Liquid crystal display device
US15/162,110 Active US9946125B2 (en) 2006-07-27 2016-05-23 Liquid crystal display device
US15/423,209 Active US10126609B2 (en) 2006-07-27 2017-02-02 Liquid crystal display device
US16/163,794 Active US10802353B2 (en) 2006-07-27 2018-10-18 Liquid crystal display device
US16/521,247 Active US10606133B2 (en) 2006-07-27 2019-07-24 Liquid crystal display device
US16/521,228 Active US11543708B2 (en) 2006-07-27 2019-07-24 Display device including common line display device including common line
US16/995,368 Active US11143923B2 (en) 2006-07-27 2020-08-17 Display device
US17/068,039 Active 2028-05-30 US11698555B2 (en) 2006-07-27 2020-10-12 Display device
US18/196,725 Active US12019339B2 (en) 2006-07-27 2023-05-12 Display device
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US15/162,110 Active US9946125B2 (en) 2006-07-27 2016-05-23 Liquid crystal display device
US15/423,209 Active US10126609B2 (en) 2006-07-27 2017-02-02 Liquid crystal display device
US16/163,794 Active US10802353B2 (en) 2006-07-27 2018-10-18 Liquid crystal display device
US16/521,247 Active US10606133B2 (en) 2006-07-27 2019-07-24 Liquid crystal display device
US16/521,228 Active US11543708B2 (en) 2006-07-27 2019-07-24 Display device including common line display device including common line
US16/995,368 Active US11143923B2 (en) 2006-07-27 2020-08-17 Display device
US17/068,039 Active 2028-05-30 US11698555B2 (en) 2006-07-27 2020-10-12 Display device
US18/196,725 Active US12019339B2 (en) 2006-07-27 2023-05-12 Display device
US18/674,187 Active US12360422B2 (en) 2006-07-27 2024-05-24 Display device

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US20190049800A1 (en) 2019-02-14
CN101114086A (zh) 2008-01-30
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US20190346725A1 (en) 2019-11-14
US10126609B2 (en) 2018-11-13
US11143923B2 (en) 2021-10-12
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US12019339B2 (en) 2024-06-25
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US10606133B2 (en) 2020-03-31
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US10802353B2 (en) 2020-10-13
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US20170146873A1 (en) 2017-05-25
US12360422B2 (en) 2025-07-15
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US9291863B2 (en) 2016-03-22
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KR100884126B1 (ko) 2009-02-17
US9946125B2 (en) 2018-04-17

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