TWI822679B - 半導體燒結體、電氣電子構件、以及半導體燒結體的製造方法 - Google Patents

半導體燒結體、電氣電子構件、以及半導體燒結體的製造方法 Download PDF

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TWI822679B
TWI822679B TW107117015A TW107117015A TWI822679B TW I822679 B TWI822679 B TW I822679B TW 107117015 A TW107117015 A TW 107117015A TW 107117015 A TW107117015 A TW 107117015A TW I822679 B TWI822679 B TW I822679B
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sintered body
silicon
particles
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semiconductor
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TW107117015A
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TW201903221A (zh
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貞頼直樹
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日商日東電工股份有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/8556—Thermoelectric active materials comprising inorganic compositions comprising compounds containing germanium or silicon
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/10—Sintering only
    • B22F3/1003—Use of special medium during sintering, e.g. sintering aid
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/10—Sintering only
    • B22F3/105—Sintering only by using electric current other than for infrared radiant energy, laser radiation or plasma ; by ultrasonic bonding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28B—SHAPING CLAY OR OTHER CERAMIC COMPOSITIONS; SHAPING SLAG; SHAPING MIXTURES CONTAINING CEMENTITIOUS MATERIAL, e.g. PLASTER
    • B28B11/00—Apparatus or processes for treating or working the shaped or preshaped articles
    • B28B11/24—Apparatus or processes for treating or working the shaped or preshaped articles for curing, setting or hardening
    • B28B11/243—Setting, e.g. drying, dehydrating or firing ceramic articles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/06—Metal silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/852—Thermoelectric active materials comprising inorganic compositions comprising tellurium, selenium or sulfur
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/853—Thermoelectric active materials comprising inorganic compositions comprising arsenic, antimony or bismuth
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/856—Thermoelectric active materials comprising organic compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/857—Thermoelectric active materials comprising compositions changing continuously or discontinuously inside the material
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/50—Solid solutions
    • C01P2002/52—Solid solutions containing elements as dopants
    • C01P2002/54—Solid solutions containing elements as dopants one element only
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
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    • C01P2002/60—Compounds characterised by their crystallite size
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    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
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    • C01P2004/60—Particles characterised by their size
    • C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
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    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
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    • C01P2006/32—Thermal properties
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties

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  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
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  • Nanotechnology (AREA)
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  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Composite Materials (AREA)
  • Structural Engineering (AREA)
  • Optics & Photonics (AREA)
  • Silicon Compounds (AREA)
  • Powder Metallurgy (AREA)
  • Thermistors And Varistors (AREA)
  • Ceramic Capacitors (AREA)
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TW107117015A 2017-05-19 2018-05-18 半導體燒結體、電氣電子構件、以及半導體燒結體的製造方法 TWI822679B (zh)

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JP2017100107 2017-05-19
JP2017-100108 2017-05-19
JP2017100108 2017-05-19
JP2017-100107 2017-05-19
JP2017-199057 2017-10-13
JP2017199057 2017-10-13

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TWI822679B true TWI822679B (zh) 2023-11-21

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TW107117015A TWI822679B (zh) 2017-05-19 2018-05-18 半導體燒結體、電氣電子構件、以及半導體燒結體的製造方法
TW107117012A TWI802573B (zh) 2017-05-19 2018-05-18 半導體燒結體、電氣電子構件、以及半導體燒結體的製造方法
TW107117013A TWI776897B (zh) 2017-05-19 2018-05-18 半導體燒結體、電氣電子構件、以及半導體燒結體的製造方法

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TW107117013A TWI776897B (zh) 2017-05-19 2018-05-18 半導體燒結體、電氣電子構件、以及半導體燒結體的製造方法

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EP (3) EP3627573B1 (cg-RX-API-DMAC10.html)
JP (3) JP7137963B2 (cg-RX-API-DMAC10.html)
KR (3) KR102579987B1 (cg-RX-API-DMAC10.html)
CN (3) CN110622328B (cg-RX-API-DMAC10.html)
TW (3) TWI822679B (cg-RX-API-DMAC10.html)
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JP7449549B2 (ja) * 2019-12-25 2024-03-14 株式会社テックスイージー 熱電素子及びその製造方法
JP7588811B2 (ja) * 2020-07-16 2024-11-25 国立研究開発法人物質・材料研究機構 熱電変換用の半導体材料およびそれを用いた熱電変換素子
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CN110622328A (zh) 2019-12-27
EP3627573A4 (en) 2021-02-24
EP3627571A1 (en) 2020-03-25
US11616182B2 (en) 2023-03-28
TW201903221A (zh) 2019-01-16
TWI802573B (zh) 2023-05-21
EP3627572B1 (en) 2023-10-04
CN110622327A (zh) 2019-12-27
CN110622326A (zh) 2019-12-27
CN110622327B (zh) 2024-03-12
EP3627572A1 (en) 2020-03-25
EP3627571A4 (en) 2021-02-24
KR20200010243A (ko) 2020-01-30
US20200203590A1 (en) 2020-06-25
WO2018212295A1 (ja) 2018-11-22
WO2018212296A1 (ja) 2018-11-22
CN110622326B (zh) 2023-12-12
US11508893B2 (en) 2022-11-22
KR20200010242A (ko) 2020-01-30
TWI776897B (zh) 2022-09-11
JP2019064899A (ja) 2019-04-25
KR20200010241A (ko) 2020-01-30
US20200075829A1 (en) 2020-03-05
EP3627573B1 (en) 2023-08-30
KR102579986B1 (ko) 2023-09-18
JP2019068038A (ja) 2019-04-25
KR102579987B1 (ko) 2023-09-18
CN110622328B (zh) 2023-12-08
TW201903222A (zh) 2019-01-16
EP3627572A4 (en) 2021-02-24
US11404620B2 (en) 2022-08-02
WO2018212297A1 (ja) 2018-11-22
JP7137963B2 (ja) 2022-09-15
TW201903220A (zh) 2019-01-16
US20200098966A1 (en) 2020-03-26
KR102579525B1 (ko) 2023-09-15
EP3627573A1 (en) 2020-03-25
JP2019068037A (ja) 2019-04-25
EP3627571B1 (en) 2023-09-06

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