TWI776897B - 半導體燒結體、電氣電子構件、以及半導體燒結體的製造方法 - Google Patents

半導體燒結體、電氣電子構件、以及半導體燒結體的製造方法 Download PDF

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TWI776897B
TWI776897B TW107117013A TW107117013A TWI776897B TW I776897 B TWI776897 B TW I776897B TW 107117013 A TW107117013 A TW 107117013A TW 107117013 A TW107117013 A TW 107117013A TW I776897 B TWI776897 B TW I776897B
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sintered body
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TW201903220A (zh
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貞頼直樹
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日商日東電工股份有限公司
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    • B22F3/10—Sintering only
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    • B28—WORKING CEMENT, CLAY, OR STONE
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    • B82—NANOTECHNOLOGY
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    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
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    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
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    • H10N10/85—Thermoelectric active materials
    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
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    • H10N10/851—Thermoelectric active materials comprising inorganic compositions
    • H10N10/853—Thermoelectric active materials comprising inorganic compositions comprising arsenic, antimony or bismuth
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    • H10N10/857—Thermoelectric active materials comprising compositions changing continuously or discontinuously inside the material
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    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
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  • Optics & Photonics (AREA)
  • Silicon Compounds (AREA)
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  • Ceramic Products (AREA)
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TW107117013A 2017-05-19 2018-05-18 半導體燒結體、電氣電子構件、以及半導體燒結體的製造方法 TWI776897B (zh)

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JP2017100108 2017-05-19
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JP2017199057 2017-10-13
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TW107117013A TWI776897B (zh) 2017-05-19 2018-05-18 半導體燒結體、電氣電子構件、以及半導體燒結體的製造方法
TW107117015A TWI822679B (zh) 2017-05-19 2018-05-18 半導體燒結體、電氣電子構件、以及半導體燒結體的製造方法
TW107117012A TWI802573B (zh) 2017-05-19 2018-05-18 半導體燒結體、電氣電子構件、以及半導體燒結體的製造方法

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TW107117012A TWI802573B (zh) 2017-05-19 2018-05-18 半導體燒結體、電氣電子構件、以及半導體燒結體的製造方法

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JP7010474B2 (ja) * 2018-01-10 2022-02-10 国立研究開発法人物質・材料研究機構 断熱材料、その製造方法および内燃機関
KR102183258B1 (ko) 2019-04-18 2020-11-26 주식회사 티씨케이 SiC 소재 및 이의 제조방법
JP7506388B2 (ja) * 2019-12-18 2024-06-26 株式会社テックスイージー 熱電素子の製造方法
JP7449549B2 (ja) * 2019-12-25 2024-03-14 株式会社テックスイージー 熱電素子及びその製造方法
JP7588811B2 (ja) * 2020-07-16 2024-11-25 国立研究開発法人物質・材料研究機構 熱電変換用の半導体材料およびそれを用いた熱電変換素子
CN117069500A (zh) * 2023-08-14 2023-11-17 陕西科技大学 一种硅化镁热电半导体材料及其制备方法和应用

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US11404620B2 (en) 2022-08-02
EP3627571A4 (en) 2021-02-24
TW201903221A (zh) 2019-01-16
EP3627573A4 (en) 2021-02-24
JP7137963B2 (ja) 2022-09-15
TW201903220A (zh) 2019-01-16
EP3627572A4 (en) 2021-02-24
TWI822679B (zh) 2023-11-21
JP2019068037A (ja) 2019-04-25
US20200075829A1 (en) 2020-03-05
CN110622327B (zh) 2024-03-12
KR20200010241A (ko) 2020-01-30
TWI802573B (zh) 2023-05-21
KR102579987B1 (ko) 2023-09-18
CN110622326B (zh) 2023-12-12
US20200098966A1 (en) 2020-03-26
KR20200010243A (ko) 2020-01-30
CN110622326A (zh) 2019-12-27
US20200203590A1 (en) 2020-06-25
CN110622328B (zh) 2023-12-08
CN110622327A (zh) 2019-12-27
JP2019068038A (ja) 2019-04-25
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