TWI674031B - 發光裝置和電子裝置 - Google Patents

發光裝置和電子裝置 Download PDF

Info

Publication number
TWI674031B
TWI674031B TW108100050A TW108100050A TWI674031B TW I674031 B TWI674031 B TW I674031B TW 108100050 A TW108100050 A TW 108100050A TW 108100050 A TW108100050 A TW 108100050A TW I674031 B TWI674031 B TW I674031B
Authority
TW
Taiwan
Prior art keywords
layer
light
insulating layer
emitting device
electrode
Prior art date
Application number
TW108100050A
Other languages
English (en)
Chinese (zh)
Other versions
TW201933938A (zh
Inventor
及川欣聰
江口晉吾
增山光男
片庭正敏
小路博信
中田昌孝
瀨尾哲史
Original Assignee
日商半導體能源研究所股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商半導體能源研究所股份有限公司 filed Critical 日商半導體能源研究所股份有限公司
Publication of TW201933938A publication Critical patent/TW201933938A/zh
Application granted granted Critical
Publication of TWI674031B publication Critical patent/TWI674031B/zh

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/80Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/87Passivation; Containers; Encapsulations
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00Electroluminescent light sources
    • H05B33/02Details
    • H05B33/04Sealing arrangements, e.g. against humidity
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/84Coatings, e.g. passivation layers or antireflective coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/841Self-supporting sealing arrangements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/844Encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/87Passivation; Containers; Encapsulations
    • H10K59/871Self-supporting sealing arrangements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/87Passivation; Containers; Encapsulations
    • H10K59/873Encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12044OLED
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/1201Manufacture or treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
TW108100050A 2008-07-10 2009-07-08 發光裝置和電子裝置 TWI674031B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008180781 2008-07-10
JP2008-180781 2008-07-10

Publications (2)

Publication Number Publication Date
TW201933938A TW201933938A (zh) 2019-08-16
TWI674031B true TWI674031B (zh) 2019-10-01

Family

ID=41507174

Family Applications (5)

Application Number Title Priority Date Filing Date
TW104120727A TWI565354B (zh) 2008-07-10 2009-07-08 發光裝置和電子裝置
TW098123072A TWI500355B (zh) 2008-07-10 2009-07-08 發光裝置和電子裝置
TW108100050A TWI674031B (zh) 2008-07-10 2009-07-08 發光裝置和電子裝置
TW107130866A TWI663892B (zh) 2008-07-10 2009-07-08 發光裝置和電子裝置
TW105131694A TWI663891B (zh) 2008-07-10 2009-07-08 發光裝置和電子裝置

Family Applications Before (2)

Application Number Title Priority Date Filing Date
TW104120727A TWI565354B (zh) 2008-07-10 2009-07-08 發光裝置和電子裝置
TW098123072A TWI500355B (zh) 2008-07-10 2009-07-08 發光裝置和電子裝置

Family Applications After (2)

Application Number Title Priority Date Filing Date
TW107130866A TWI663892B (zh) 2008-07-10 2009-07-08 發光裝置和電子裝置
TW105131694A TWI663891B (zh) 2008-07-10 2009-07-08 發光裝置和電子裝置

Country Status (5)

Country Link
US (7) US8264144B2 (enExample)
JP (9) JP2010040522A (enExample)
KR (5) KR101925772B1 (enExample)
TW (5) TWI565354B (enExample)
WO (1) WO2010005064A1 (enExample)

Families Citing this family (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101925772B1 (ko) 2008-07-10 2018-12-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 전자 기기
JP5216716B2 (ja) * 2008-08-20 2013-06-19 株式会社半導体エネルギー研究所 発光装置及びその作製方法
EP2256814B1 (en) * 2009-05-29 2019-01-16 Semiconductor Energy Laboratory Co, Ltd. Oxide semiconductor device and method for manufacturing the same
TW201110802A (en) * 2009-06-24 2011-03-16 Seiko Epson Corp Electro-optical device, electronic device, and illumination apparatus
JP5533073B2 (ja) * 2010-03-16 2014-06-25 セイコーエプソン株式会社 電気光学装置、および照明装置
TWI474447B (zh) * 2009-06-29 2015-02-21 日月光半導體製造股份有限公司 半導體封裝結構及其封裝方法
US9136286B2 (en) * 2009-08-07 2015-09-15 Semiconductor Energy Laboratory Co., Ltd. Display panel and electronic book
KR20120106950A (ko) * 2009-11-13 2012-09-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 스퍼터링 타겟 및 그 제작 방법 및 트랜지스터
WO2011058882A1 (en) 2009-11-13 2011-05-19 Semiconductor Energy Laboratory Co., Ltd. Sputtering target and manufacturing method thereof, and transistor
DE112011100841B4 (de) * 2010-03-08 2021-11-25 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung und verfahren zur herstellung der halbleitervorrichtung
TW201732525A (zh) * 2010-03-08 2017-09-16 半導體能源研究所股份有限公司 電子裝置及電子系統
KR20110114325A (ko) * 2010-04-13 2011-10-19 삼성모바일디스플레이주식회사 표시 장치
JP2011227369A (ja) 2010-04-22 2011-11-10 Hitachi Displays Ltd 画像表示装置及びその製造方法
CN104465408B (zh) * 2010-04-23 2017-09-15 株式会社半导体能源研究所 半导体装置及半导体装置的制造方法
KR101798487B1 (ko) * 2010-06-01 2017-11-17 삼성디스플레이 주식회사 표시 장치
KR101275792B1 (ko) * 2010-07-28 2013-06-18 삼성디스플레이 주식회사 표시 장치 및 유기 발광 표시 장치
KR101201720B1 (ko) 2010-07-29 2012-11-15 삼성디스플레이 주식회사 표시 장치 및 유기 발광 표시 장치
TWI641287B (zh) 2010-09-14 2018-11-11 半導體能源研究所股份有限公司 固態發光元件,發光裝置和照明裝置
US8633600B2 (en) * 2010-09-21 2014-01-21 Infineon Technologies Ag Device and method for manufacturing a device
KR20120044654A (ko) * 2010-10-28 2012-05-08 삼성모바일디스플레이주식회사 표시 장치, 표시 장치의 제조 방법, 및 유기 발광 표시 장치
JP5827104B2 (ja) 2010-11-19 2015-12-02 株式会社半導体エネルギー研究所 照明装置
KR101757810B1 (ko) * 2010-11-19 2017-07-17 삼성디스플레이 주식회사 표시 장치, 유기 발광 표시 장치, 및 밀봉 기판의 제조 방법
KR20120066354A (ko) * 2010-12-14 2012-06-22 삼성모바일디스플레이주식회사 기판 및 상기 기판을 포함하는 표시 장치
JP6118020B2 (ja) 2010-12-16 2017-04-19 株式会社半導体エネルギー研究所 発光装置
KR101839954B1 (ko) * 2010-12-17 2018-03-20 삼성디스플레이 주식회사 표시 장치 및 유기 발광 표시 장치
US8735874B2 (en) 2011-02-14 2014-05-27 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, display device, and method for manufacturing the same
KR101922603B1 (ko) 2011-03-04 2018-11-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치, 조명 장치, 기판, 기판의 제작 방법
CN202549848U (zh) 2012-04-28 2012-11-21 京东方科技集团股份有限公司 显示装置、阵列基板和薄膜晶体管
KR102079188B1 (ko) * 2012-05-09 2020-02-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 전자 기기
TWI645578B (zh) 2012-07-05 2018-12-21 半導體能源研究所股份有限公司 發光裝置及發光裝置的製造方法
TW201408810A (zh) * 2012-07-12 2014-03-01 Applied Materials Inc 用於沉積貧氧金屬膜的方法
US20150162566A1 (en) * 2012-07-27 2015-06-11 Konica Minolta, Inc. Organic electroluminescent element
KR20140019699A (ko) * 2012-08-07 2014-02-17 삼성디스플레이 주식회사 플렉시블 유기 발광 표시 장치 및 그 제조방법
KR102481056B1 (ko) 2012-08-10 2022-12-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 장치
US9203050B2 (en) * 2013-05-21 2015-12-01 Samsung Display Co., Ltd. Organic light emitting diode display and method of manufacturing the same
US11145838B2 (en) 2013-05-21 2021-10-12 Samsung Display Co., Ltd. Organic light emitting diode display and method of manufacturing the same
US9269914B2 (en) 2013-08-01 2016-02-23 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, electronic device, and lighting device
CN103488003B (zh) * 2013-09-26 2017-02-01 京东方科技集团股份有限公司 一种阵列基板及其制作方法、液晶面板及显示装置
US9229481B2 (en) 2013-12-20 2016-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6262039B2 (ja) * 2014-03-17 2018-01-17 株式会社ディスコ 板状物の加工方法
JP6399801B2 (ja) * 2014-05-13 2018-10-03 株式会社ジャパンディスプレイ 有機エレクトロルミネッセンス表示装置
JP6301203B2 (ja) 2014-06-02 2018-03-28 株式会社ディスコ チップの製造方法
CN106537485B (zh) * 2014-07-25 2019-07-16 株式会社半导体能源研究所 显示装置及电子设备
KR102472238B1 (ko) 2014-10-17 2022-11-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치, 모듈, 전자 기기, 및 발광 장치의 제작 방법
CN107851728B (zh) 2015-07-23 2020-07-14 株式会社半导体能源研究所 显示装置、模块及电子设备
US10978489B2 (en) 2015-07-24 2021-04-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display panel, method for manufacturing semiconductor device, method for manufacturing display panel, and information processing device
KR102632066B1 (ko) 2015-07-30 2024-02-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치의 제작 방법, 발광 장치, 모듈, 및 전자 기기
WO2017103737A1 (en) 2015-12-18 2017-06-22 Semiconductor Energy Laboratory Co., Ltd. Display panel, input/output device, data processing device, and method for manufacturing display panel
WO2017111910A1 (en) * 2015-12-21 2017-06-29 Intel Corporation High performance integrated rf passives using dual lithography process
KR101708049B1 (ko) * 2015-12-21 2017-02-20 삼성디스플레이 주식회사 표시 장치
US10586817B2 (en) * 2016-03-24 2020-03-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method thereof, and separation apparatus
JP6648616B2 (ja) * 2016-04-11 2020-02-14 住友電気工業株式会社 半導体装置
KR102554240B1 (ko) * 2018-02-14 2023-07-11 삼성디스플레이 주식회사 표시 장치 및 표시 장치의 제조 방법
JP7293190B2 (ja) 2018-03-16 2023-06-19 株式会社半導体エネルギー研究所 半導体装置
CN112640577B (zh) * 2018-09-06 2024-05-24 夏普株式会社 显示装置
US11588137B2 (en) 2019-06-05 2023-02-21 Semiconductor Energy Laboratory Co., Ltd. Functional panel, display device, input/output device, and data processing device
US11659758B2 (en) 2019-07-05 2023-05-23 Semiconductor Energy Laboratory Co., Ltd. Display unit, display module, and electronic device
WO2021009587A1 (ja) 2019-07-12 2021-01-21 株式会社半導体エネルギー研究所 機能パネル、表示装置、入出力装置、情報処理装置
CN110429205B (zh) * 2019-07-31 2021-06-01 武汉华星光电半导体显示技术有限公司 一种显示面板及显示装置
WO2021069999A1 (ja) 2019-10-11 2021-04-15 株式会社半導体エネルギー研究所 機能パネル、表示装置、入出力装置、情報処理装置
CN111029480A (zh) * 2019-12-11 2020-04-17 京东方科技集团股份有限公司 一种底发射显示基板、制作方法和显示装置
TWI777887B (zh) * 2020-08-19 2022-09-11 友達光電股份有限公司 元件基板及其製造方法
KR20230038359A (ko) * 2021-09-10 2023-03-20 삼성디스플레이 주식회사 표시 장치 및 표시 장치의 제조방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200426444A (en) * 2003-05-22 2004-12-01 Seiko Epson Corp Thin-film circuit device and its manufacturing method, electro-optical device, and electronic device
TW200427054A (en) * 2003-05-23 2004-12-01 Seiko Epson Corp Manufacturing method of thin film device, optoelectronic device, and electronic machine
TW200711181A (en) * 2005-08-05 2007-03-16 Semiconductor Energy Lab Co Ltd Light-emitting device and manufacturing method thereof

Family Cites Families (142)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4637851A (en) * 1985-01-25 1987-01-20 Shin-Etsu Chemical Co., Ltd. Method for the preparation of a laminate
US4792481A (en) * 1986-11-28 1988-12-20 Phillips Petroleum Company Reinforced plastic
US4943472A (en) * 1988-03-03 1990-07-24 Basf Aktiengesellschaft Improved preimpregnated material comprising a particulate thermosetting resin suitable for use in the formation of a substantially void-free fiber-reinforced composite article
EP0541795B1 (en) * 1989-01-25 1998-04-01 Asahi Kasei Kogyo Kabushiki Kaisha New prepreg and composite molding, and production of composite molding
DE3907757A1 (de) * 1989-03-10 1990-09-13 Mtu Muenchen Gmbh Schutzfolie
JPH05190582A (ja) 1992-01-08 1993-07-30 Oki Electric Ind Co Ltd 樹脂封止半導体装置及びその製造方法
JPH07130472A (ja) * 1993-11-04 1995-05-19 Nippondenso Co Ltd エレクトロルミネッセンス素子
US5879502A (en) * 1994-05-27 1999-03-09 Gustafson; Ake Method for making an electronic module and electronic module obtained according to the method
TW371285B (en) 1994-09-19 1999-10-01 Amp Akzo Linlam Vof Foiled UD-prepreg and PWB laminate prepared therefrom
JP3364081B2 (ja) * 1995-02-16 2003-01-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3406727B2 (ja) 1995-03-10 2003-05-12 株式会社半導体エネルギー研究所 表示装置
US5757456A (en) * 1995-03-10 1998-05-26 Semiconductor Energy Laboratory Co., Ltd. Display device and method of fabricating involving peeling circuits from one substrate and mounting on other
JP3744980B2 (ja) 1995-07-27 2006-02-15 株式会社半導体エネルギー研究所 半導体装置
US6015724A (en) * 1995-11-02 2000-01-18 Semiconductor Energy Laboratory Co. Manufacturing method of a semiconductor device
US6979882B1 (en) 1996-07-16 2005-12-27 Semiconductor Energy Laboratory Co., Ltd. Electronic device and method for manufacturing the same
JP3759999B2 (ja) 1996-07-16 2006-03-29 株式会社半導体エネルギー研究所 半導体装置、液晶表示装置、el装置、tvカメラ表示装置、パーソナルコンピュータ、カーナビゲーションシステム、tvプロジェクション装置及びビデオカメラ
US6482495B1 (en) * 1996-09-04 2002-11-19 Hitachi Maxwell, Ltd. Information carrier and process for production thereof
JPH1092980A (ja) 1996-09-13 1998-04-10 Toshiba Corp 無線カードおよびその製造方法
JPH10198778A (ja) * 1997-01-14 1998-07-31 Rohm Co Ltd Icカード
JP3500908B2 (ja) 1997-04-28 2004-02-23 松下電器産業株式会社 カードリーダ
JPH1126911A (ja) * 1997-07-09 1999-01-29 Nippon Kokuen Kogyo Kk 導電性接点パットとその製造方法
JP3482856B2 (ja) 1998-01-26 2004-01-06 株式会社日立製作所 液晶表示装置およびその製造方法
JPH11317475A (ja) * 1998-02-27 1999-11-16 Canon Inc 半導体用封止材樹脂および半導体素子
JP2006140513A (ja) 1998-10-13 2006-06-01 Murata Mfg Co Ltd セラミック多層基板の製造方法
TW484101B (en) * 1998-12-17 2002-04-21 Hitachi Ltd Semiconductor device and its manufacturing method
JP2000231619A (ja) 1999-02-10 2000-08-22 Nippon Telegr & Teleph Corp <Ntt> 接触型icカード
US6224965B1 (en) 1999-06-25 2001-05-01 Honeywell International Inc. Microfiber dielectrics which facilitate laser via drilling
JP4423779B2 (ja) 1999-10-13 2010-03-03 味の素株式会社 エポキシ樹脂組成物並びに該組成物を用いた接着フィルム及びプリプレグ、及びこれらを用いた多層プリント配線板及びその製造法
JP4682390B2 (ja) * 2000-02-25 2011-05-11 凸版印刷株式会社 高分子el素子
JP4347496B2 (ja) 2000-03-31 2009-10-21 共同印刷株式会社 可逆性感熱記録媒体の製造方法
JP4713010B2 (ja) 2000-05-08 2011-06-29 株式会社半導体エネルギー研究所 発光装置及びその作製方法
US6608449B2 (en) 2000-05-08 2003-08-19 Semiconductor Energy Laboratory Co., Ltd. Luminescent apparatus and method of manufacturing the same
JP3862202B2 (ja) 2000-06-16 2006-12-27 共同印刷株式会社 アクティブマトリックス層および転写方法
TW525216B (en) * 2000-12-11 2003-03-21 Semiconductor Energy Lab Semiconductor device, and manufacturing method thereof
SG111923A1 (en) * 2000-12-21 2005-06-29 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
JP2002352950A (ja) * 2001-02-07 2002-12-06 Semiconductor Energy Lab Co Ltd 発光装置およびその作製方法
JP4101529B2 (ja) * 2001-02-22 2008-06-18 株式会社半導体エネルギー研究所 表示装置及びその作製方法
US6992439B2 (en) 2001-02-22 2006-01-31 Semiconductor Energy Laboratory Co., Ltd. Display device with sealing structure for protecting organic light emitting element
JP2002324904A (ja) 2001-04-24 2002-11-08 Matsushita Electric Ind Co Ltd 薄膜トランジスタ及びその形成方法
JP2002358031A (ja) 2001-06-01 2002-12-13 Semiconductor Energy Lab Co Ltd 発光装置及びその駆動方法
US7211828B2 (en) 2001-06-20 2007-05-01 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic apparatus
JP2003086356A (ja) 2001-09-06 2003-03-20 Semiconductor Energy Lab Co Ltd 発光装置及び電子機器
TW548860B (en) 2001-06-20 2003-08-21 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
US8415208B2 (en) * 2001-07-16 2013-04-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and peeling off method and method of manufacturing semiconductor device
JP4027740B2 (ja) 2001-07-16 2007-12-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR100944886B1 (ko) * 2001-10-30 2010-03-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제조 방법
JP4010394B2 (ja) * 2001-12-14 2007-11-21 大日本印刷株式会社 エレクトロルミネッセント素子
KR100430001B1 (ko) * 2001-12-18 2004-05-03 엘지전자 주식회사 다층기판의 제조방법, 그 다층기판의 패드 형성방법 및 그다층기판을 이용한 반도체 패키지의 제조방법
JP5105690B2 (ja) * 2002-03-26 2012-12-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6853052B2 (en) 2002-03-26 2005-02-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a buffer layer against stress
US7485489B2 (en) * 2002-06-19 2009-02-03 Bjoersell Sten Electronics circuit manufacture
AU2003253227A1 (en) 2002-06-19 2004-01-06 Sten Bjorsell Electronics circuit manufacture
US7132311B2 (en) * 2002-07-26 2006-11-07 Intel Corporation Encapsulation of a stack of semiconductor dice
JP4012025B2 (ja) 2002-09-24 2007-11-21 大日本印刷株式会社 微小構造体付きフィルムの製造方法と微小構造体付きフィルム
JP4531354B2 (ja) * 2002-10-29 2010-08-25 電気化学工業株式会社 熱伝導シート
JP4181060B2 (ja) 2003-02-25 2008-11-12 シャープ株式会社 液晶表示装置
JP4828088B2 (ja) 2003-06-05 2011-11-30 凸版印刷株式会社 Icタグ
JP4181013B2 (ja) * 2003-11-04 2008-11-12 シャープ株式会社 表示装置およびその製造方法
JP4483264B2 (ja) 2003-11-05 2010-06-16 セイコーエプソン株式会社 表示装置及び電子機器
JP4233433B2 (ja) * 2003-11-06 2009-03-04 シャープ株式会社 表示装置の製造方法
JP2005142121A (ja) 2003-11-10 2005-06-02 Hitachi Displays Ltd 有機el表示装置およびその製造方法
WO2005052893A1 (en) 2003-11-28 2005-06-09 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing display device
US7374977B2 (en) * 2003-12-17 2008-05-20 Semiconductor Energy Laboratory Co., Ltd. Droplet discharge device, and method for forming pattern, and method for manufacturing display device
US7495257B2 (en) * 2003-12-26 2009-02-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
JP4063225B2 (ja) 2004-01-21 2008-03-19 ソニー株式会社 液晶表示装置および液晶表示装置の製造方法
WO2005074030A1 (en) * 2004-01-30 2005-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP3994998B2 (ja) 2004-03-03 2007-10-24 セイコーエプソン株式会社 発光装置、発光装置の製造方法及び電子機器
JP2005259469A (ja) 2004-03-10 2005-09-22 Sharp Corp 有機エレクトロルミネッセンス表示装置
JP4457711B2 (ja) 2004-03-18 2010-04-28 セイコーエプソン株式会社 有機el装置の製造方法、有機el装置および電子機器
JP2005298703A (ja) * 2004-04-13 2005-10-27 Mitsui Chemicals Inc 粘着性フィルム、筐体およびそれを用いた有機el発光素子
JP4606767B2 (ja) 2004-04-14 2011-01-05 共同印刷株式会社 表示装置用素子基板の製造方法
EP1589797A3 (en) 2004-04-19 2008-07-30 Matsushita Electric Industrial Co., Ltd. Manufacturing method of laminated substrate, and manufacturing apparatus of semiconductor device for module and laminated substrate for use therein
JP2006004907A (ja) * 2004-05-18 2006-01-05 Seiko Epson Corp エレクトロルミネッセンス装置及び電子機器
JP2005340385A (ja) * 2004-05-25 2005-12-08 Nitto Denko Corp 配線回路基板および配線回路基板の接続構造
WO2005119781A1 (en) * 2004-06-02 2005-12-15 Semiconductor Energy Laboratory Co., Ltd. Laminating system
JP4817730B2 (ja) 2004-07-09 2011-11-16 株式会社半導体エネルギー研究所 表示装置
US7554260B2 (en) 2004-07-09 2009-06-30 Semiconductor Energy Laboratory Co., Ltd. Display device provided with a conductive film connection between a wiring component and a metal electrode film
US7591863B2 (en) * 2004-07-16 2009-09-22 Semiconductor Energy Laboratory Co., Ltd. Laminating system, IC sheet, roll of IC sheet, and method for manufacturing IC chip
JP4193805B2 (ja) 2004-07-27 2008-12-10 セイコーエプソン株式会社 発光装置および画像形成装置
CN100474629C (zh) * 2004-08-23 2009-04-01 株式会社半导体能源研究所 无线芯片及其制造方法
KR100592302B1 (ko) 2004-11-03 2006-06-22 삼성에스디아이 주식회사 박막 트랜지스터를 구비한 기판의 제조방법, 이에 따라제조된 박막 트랜지스터를 구비한 기판, 평판 표시장치의제조방법, 및 이에 따라 제조된 평판 표시장치
US7825582B2 (en) 2004-11-08 2010-11-02 Kyodo Printing Co., Ltd. Flexible display and manufacturing method thereof
JP4589830B2 (ja) 2005-06-29 2010-12-01 共同印刷株式会社 フレキシブルディスプレイ及びその製造方法
JP4707996B2 (ja) 2004-11-08 2011-06-22 共同印刷株式会社 フレキシブルディスプレイ及びその製造方法
JP5062990B2 (ja) * 2004-11-19 2012-10-31 株式会社半導体エネルギー研究所 表示装置
TWI411349B (zh) 2004-11-19 2013-10-01 半導體能源研究所股份有限公司 顯示裝置及電子裝置
US7736964B2 (en) * 2004-11-22 2010-06-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and method for manufacturing the same
JP4484733B2 (ja) * 2005-03-03 2010-06-16 シャープ株式会社 表示装置用プラスチック基板およびその製造方法
JP2006259049A (ja) * 2005-03-16 2006-09-28 Seiko Epson Corp 中吊り広告用情報表示装置
US8300031B2 (en) 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
JP4999351B2 (ja) * 2005-04-20 2012-08-15 株式会社半導体エネルギー研究所 半導体装置及び表示装置
US7727859B2 (en) * 2005-06-30 2010-06-01 Semiconductor Energy Laboratory Co., Ltd Semiconductor device and manufacturing method thereof
US7732330B2 (en) * 2005-06-30 2010-06-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method using an ink-jet method of the same
US7685706B2 (en) * 2005-07-08 2010-03-30 Semiconductor Energy Laboratory Co., Ltd Method of manufacturing a semiconductor device
US7655566B2 (en) * 2005-07-27 2010-02-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2007059821A (ja) * 2005-08-26 2007-03-08 Shinko Electric Ind Co Ltd 配線基板の製造方法
EP1777689B1 (en) 2005-10-18 2016-08-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device and electronic equipment each having the same
JP5142507B2 (ja) 2005-10-18 2013-02-13 株式会社半導体エネルギー研究所 半導体装置及び当該半導体装置を具備する表示装置並びに電子機器
JP4781082B2 (ja) * 2005-10-24 2011-09-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR100754874B1 (ko) 2005-11-15 2007-09-04 삼성전자주식회사 양면 표시 표시장치
JP4251185B2 (ja) 2006-01-23 2009-04-08 ソニー株式会社 半導体集積回路カードの製造方法
JP2007241999A (ja) 2006-02-08 2007-09-20 Semiconductor Energy Lab Co Ltd 半導体装置
DE602007013478D1 (de) * 2006-02-08 2011-05-12 Semiconductor Energy Lab RFID-Vorrichtung
US8222116B2 (en) * 2006-03-03 2012-07-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8173519B2 (en) * 2006-03-03 2012-05-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2007287503A (ja) 2006-04-18 2007-11-01 Sharp Corp 有機elディスプレイ
JP2007299978A (ja) * 2006-05-01 2007-11-15 Seiko Epson Corp 発光装置およびその製造方法ならびに電子機器
JP2007334317A (ja) 2006-05-16 2007-12-27 Semiconductor Energy Lab Co Ltd 液晶表示装置及び半導体装置
TWI764143B (zh) 2006-05-16 2022-05-11 日商半導體能源研究所股份有限公司 液晶顯示裝置
TWI431726B (zh) * 2006-06-01 2014-03-21 Semiconductor Energy Lab 非揮發性半導體記憶體裝置
JP5094232B2 (ja) * 2006-06-26 2012-12-12 株式会社半導体エネルギー研究所 半導体装置を内包する用紙およびその作製方法
EP2038818B1 (en) * 2006-06-26 2014-10-15 Semiconductor Energy Laboratory Co., Ltd. Paper including semiconductor device and manufacturing method thereof
JP5144041B2 (ja) * 2006-07-26 2013-02-13 パナソニック株式会社 有機エレクトロルミネッセンス発光装置及び有機エレクトロルミネッセンス照明装置
JP2008059824A (ja) 2006-08-30 2008-03-13 Fuji Electric Holdings Co Ltd アクティブマトリックス型有機elパネルおよびその製造方法
WO2008032526A1 (en) * 2006-09-15 2008-03-20 Konica Minolta Holdings, Inc. Process for production of flexible sealing film and organic electroluminescent devices made by using the film
JP2008103254A (ja) * 2006-10-20 2008-05-01 Tokai Rubber Ind Ltd 有機elデバイス
TWI442368B (zh) 2006-10-26 2014-06-21 Semiconductor Energy Lab 電子裝置,顯示裝置,和半導體裝置,以及其驅動方法
JP2008134625A (ja) * 2006-10-26 2008-06-12 Semiconductor Energy Lab Co Ltd 半導体装置、表示装置及び電子機器
JP2008140684A (ja) 2006-12-04 2008-06-19 Toppan Printing Co Ltd カラーelディスプレイおよびその製造方法
JP5105842B2 (ja) 2006-12-05 2012-12-26 キヤノン株式会社 酸化物半導体を用いた表示装置及びその製造方法
JP2008151963A (ja) 2006-12-15 2008-07-03 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の駆動方法
JP5138927B2 (ja) 2006-12-25 2013-02-06 共同印刷株式会社 フレキシブルtft基板及びその製造方法とフレキシブルディスプレイ
JP2008159934A (ja) 2006-12-25 2008-07-10 Kyodo Printing Co Ltd フレキシブルtft基板及びその製造方法とフレキシブルディスプレイ
EP1970951A3 (en) * 2007-03-13 2009-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
EP2372756A1 (en) * 2007-03-13 2011-10-05 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and manufacturing method thereof
JP5268395B2 (ja) * 2007-03-26 2013-08-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP1976000A3 (en) * 2007-03-26 2009-05-13 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US7750852B2 (en) * 2007-04-13 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
EP2001047A1 (en) * 2007-06-07 2008-12-10 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device
JP5346497B2 (ja) * 2007-06-12 2013-11-20 株式会社半導体エネルギー研究所 半導体装置
JP5142831B2 (ja) * 2007-06-14 2013-02-13 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
JP5248240B2 (ja) * 2007-08-30 2013-07-31 株式会社半導体エネルギー研究所 半導体装置
JP5473413B2 (ja) * 2008-06-20 2014-04-16 株式会社半導体エネルギー研究所 配線基板の作製方法、アンテナの作製方法及び半導体装置の作製方法
TWI475282B (zh) * 2008-07-10 2015-03-01 Semiconductor Energy Lab 液晶顯示裝置和其製造方法
KR101925772B1 (ko) 2008-07-10 2018-12-06 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 전자 기기
JP5358324B2 (ja) * 2008-07-10 2013-12-04 株式会社半導体エネルギー研究所 電子ペーパー
WO2010035625A1 (en) * 2008-09-25 2010-04-01 Semiconductor Energy Laboratory Co., Ltd. Semi conductor device
US8610155B2 (en) * 2008-11-18 2013-12-17 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, method for manufacturing the same, and cellular phone
US8669702B2 (en) * 2010-11-19 2014-03-11 Semiconductor Energy Laboratory Co., Ltd. Lighting device
KR102040242B1 (ko) * 2011-05-12 2019-11-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 발광 장치를 이용한 전자 기기
TWI730017B (zh) * 2016-08-09 2021-06-11 日商半導體能源研究所股份有限公司 顯示裝置的製造方法、顯示裝置、顯示模組及電子裝置
JP6981812B2 (ja) * 2016-08-31 2021-12-17 株式会社半導体エネルギー研究所 半導体装置の作製方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200426444A (en) * 2003-05-22 2004-12-01 Seiko Epson Corp Thin-film circuit device and its manufacturing method, electro-optical device, and electronic device
TW200427054A (en) * 2003-05-23 2004-12-01 Seiko Epson Corp Manufacturing method of thin film device, optoelectronic device, and electronic machine
TW200711181A (en) * 2005-08-05 2007-03-16 Semiconductor Energy Lab Co Ltd Light-emitting device and manufacturing method thereof

Also Published As

Publication number Publication date
TWI565354B (zh) 2017-01-01
TWI663891B (zh) 2019-06-21
KR102026604B1 (ko) 2019-10-01
KR101925772B1 (ko) 2018-12-06
JP2019140111A (ja) 2019-08-22
JP2017011308A (ja) 2017-01-12
US20190189856A1 (en) 2019-06-20
WO2010005064A1 (en) 2010-01-14
US11101407B2 (en) 2021-08-24
US20100013372A1 (en) 2010-01-21
KR20170076792A (ko) 2017-07-04
JP6840783B2 (ja) 2021-03-10
US8264144B2 (en) 2012-09-11
JP2017216247A (ja) 2017-12-07
US8860306B2 (en) 2014-10-14
TW201547316A (zh) 2015-12-16
TW201902296A (zh) 2019-01-01
JP6510590B2 (ja) 2019-05-08
JP2016012576A (ja) 2016-01-21
KR101802137B1 (ko) 2017-11-28
US20150060890A1 (en) 2015-03-05
US20230170444A1 (en) 2023-06-01
JP2017010063A (ja) 2017-01-12
TWI663892B (zh) 2019-06-21
TW201720225A (zh) 2017-06-01
TWI500355B (zh) 2015-09-11
US20180374995A1 (en) 2018-12-27
JP2023126869A (ja) 2023-09-12
US20210384380A1 (en) 2021-12-09
KR20150068497A (ko) 2015-06-19
KR101588576B1 (ko) 2016-01-26
KR20110038032A (ko) 2011-04-13
JP2014220259A (ja) 2014-11-20
JP6180606B2 (ja) 2017-08-16
JP5829735B2 (ja) 2015-12-09
JP2010040522A (ja) 2010-02-18
US10205062B2 (en) 2019-02-12
JP2021073678A (ja) 2021-05-13
JP6082797B2 (ja) 2017-02-15
US10079330B2 (en) 2018-09-18
US11557697B2 (en) 2023-01-17
US20120326145A1 (en) 2012-12-27
KR101753574B1 (ko) 2017-07-04
TW201014442A (en) 2010-04-01
TW201933938A (zh) 2019-08-16
KR20170129961A (ko) 2017-11-27
JP7651622B2 (ja) 2025-03-26
KR20180129978A (ko) 2018-12-05
JP6177982B2 (ja) 2017-08-09
US11908976B2 (en) 2024-02-20

Similar Documents

Publication Publication Date Title
TWI674031B (zh) 發光裝置和電子裝置

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees