JP2006004907A - エレクトロルミネッセンス装置及び電子機器 - Google Patents
エレクトロルミネッセンス装置及び電子機器 Download PDFInfo
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- JP2006004907A JP2006004907A JP2005063478A JP2005063478A JP2006004907A JP 2006004907 A JP2006004907 A JP 2006004907A JP 2005063478 A JP2005063478 A JP 2005063478A JP 2005063478 A JP2005063478 A JP 2005063478A JP 2006004907 A JP2006004907 A JP 2006004907A
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- light emitting
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- conductive film
- sealing
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Images
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B41/00—Circuit arrangements or apparatus for igniting or operating discharge lamps
- H05B41/14—Circuit arrangements
- H05B41/36—Controlling
- H05B41/38—Controlling the intensity of light
- H05B41/39—Controlling the intensity of light continuously
- H05B41/392—Controlling the intensity of light continuously using semiconductor devices, e.g. thyristor
- H05B41/3921—Controlling the intensity of light continuously using semiconductor devices, e.g. thyristor with possibility of light intensity variations
- H05B41/3922—Controlling the intensity of light continuously using semiconductor devices, e.g. thyristor with possibility of light intensity variations and measurement of the incident light
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B41/00—Circuit arrangements or apparatus for igniting or operating discharge lamps
- H05B41/14—Circuit arrangements
- H05B41/26—Circuit arrangements in which the lamp is fed by power derived from dc by means of a converter, e.g. by high-voltage dc
- H05B41/28—Circuit arrangements in which the lamp is fed by power derived from dc by means of a converter, e.g. by high-voltage dc using static converters
- H05B41/295—Circuit arrangements in which the lamp is fed by power derived from dc by means of a converter, e.g. by high-voltage dc using static converters with semiconductor devices and specially adapted for lamps with preheating electrodes, e.g. for fluorescent lamps
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8428—Vertical spacers, e.g. arranged between the sealing arrangement and the OLED
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
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- H10K59/8722—Peripheral sealing arrangements, e.g. adhesives, sealants
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
- H10K59/8723—Vertical spacers, e.g. arranged between the sealing arrangement and the OLED
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/18—Tiled displays
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
【解決手段】 本発明に係るEL表示装置は、一面側に有機EL素子が設けられた素子基板70と、前記有機EL素子を覆うように前記素子基板70と対向して配置された封止基板30と、前記素子基板70と反対側の封止基板30上に設けられた導電膜36と、を備えている。
【選択図】 図1
Description
図1(a)は、本発明の第1の実施形態であるEL(エレクトロルミネッセンス)表示装置101を示す平面構成図であり、(b)は、同、側面構成図である。
次に、本発明の第2の実施形態について、図5を参照して説明する。図5は本実施形態に係るEL表示装置111の断面構成図である。本実施形態のEL表示装置111は、図5に示す封止基板37及び絶縁膜38を具備し、ボトムエミッション型とされている点に特徴を有しており、その平面構成や回路構成等は、図1から図4に示した先の第1実施形態に係るEL表示装置101と概略同様である。したがって以下の説明では適宜図1から図4を参照しつつ説明する。また図5において図1から図4と同一の符号は同一の構成要素を示している。
次に、本発明に係る第3の実施形態について、図6を参照して説明する。図6は本実施形態に係るEL表示装置に備えられる封止体を示す部分断面構成図である。本実施形態に係るEL表示装置は、先の第1実施形態に係るEL表示装置101について、図6に示す封止体を採用した構成である。すなわち、図6に示すような、封止基板30の外面側(接着層33と反対側)に、導電膜36とチタン酸化物膜81との積層膜が設けられた構造を具備したEL表示装置である。
次に、図7を参照して本発明の第4の実施形態について説明する。図7は本実施形態に係るEL表示装置に備えられる封止体を示す部分断面構成図である。本実施形態に係るEL表示装置は、先の第1実施形態に係るEL表示装置101について、図7に示す封止体を採用した構成である。すなわち、図7に示すような、封止基板30の外面側(接着層33と反対側)に設けられた導電膜36上に、複数(図示では2層)のチタン酸化物膜91と、複数(図示では2層)のシリコン酸化物膜92とを交互に積層した積層膜90が設けられているEL表示装置である。
図8は、本発明に係る電子機器の一例を示す斜視構成図である。
Claims (11)
- 一面側に発光素子が設けられた素子基板と、
前記発光素子を覆うように前記素子基板と対向して配置された封止体と、
前記素子基板と反対側の封止体面に設けられた導電膜と、
を備えたことを特徴とするエレクトロルミネッセンス装置。 - 前記導電膜が、インジウム錫酸化物、インジウム亜鉛酸化物、ガリウム亜鉛酸化物、インジウムセリウム酸化物、酸化錫、酸化亜鉛、酸化インジウムから選ばれる1種以上からなる透光性導電膜であることを特徴とする請求項1に記載のエレクトロルミネッセンス装置。
- 前記封止体面に設けられた前記導電膜上に、チタン酸化物膜が積層されていることを特徴とする請求項1又は2に記載のエレクトロルミネッセンス装置。
- 前記封止体面に設けられた前記導電膜上に、チタン酸化物膜及び/又はシリコン酸化物膜を含む積層膜が設けられていることを特徴とする請求項1から3のいずれか1項に記載のエレクトロルミネッセンス装置。
- 前記導電膜が、金属、金属窒化物、及び金属酸化物のいずれかを含むことを特徴とする請求項1から4のいずれか1項に記載のエレクトロルミネッセンス装置。
- 前記導電膜が、チタン酸化物からなることを特徴とする請求項5に記載のエレクトロルミネッセンス装置。
- 一面側に発光素子が設けられた素子基板と、前記発光素子を覆うように前記素子基板と対向して配置された封止体とを備え、
前記封止体が、導電性基板と絶縁膜とを積層してなる構造を具備し、前記絶縁膜を前記発光素子側に向けて配置されていることを特徴とするエレクトロルミネッセンス装置。 - 一面側に発光素子が設けられた複数の素子基板を平面的に配列するとともに、一の支持基板により一体に支持してなる表示体と、
前記素子基板を挟持して前記支持基板と対向配置された封止体と、
前記封止体の素子基板と反対側面に設けられた導電膜と
を備えたことを特徴とするエレクトロルミネッセンス装置。 - 一面側に発光素子が設けられた複数の素子基板を平面的に配列するとともに、一の支持基板により一体に支持してなる表示体を有し、
前記支持基板上に導電膜が設けられてなることを特徴とするエレクトロルミネッセンス装置。 - 前記発光素子と封止体との間に、樹脂層が設けられていることを特徴とする請求項1から9のいずれか1項に記載のエレクトロルミネッセンス装置。
- 請求項1から10のいずれか1項に記載のエレクトロルミネッセンス装置を備えたことを特徴とする電子機器。
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JP2005063478A JP2006004907A (ja) | 2004-05-18 | 2005-03-08 | エレクトロルミネッセンス装置及び電子機器 |
KR1020050032956A KR100768905B1 (ko) | 2004-05-18 | 2005-04-21 | 일렉트로루미네선스 장치 및 전자기기 |
US11/119,729 US20050258441A1 (en) | 2004-05-18 | 2005-05-03 | Electroluminescent device and electronic apparatus |
TW094114915A TW200607384A (en) | 2004-05-18 | 2005-05-09 | Electroluminescent (EL) device and electronic apparatus |
CN200510071318XA CN1700823B (zh) | 2004-05-18 | 2005-05-18 | 电致发光装置及电子设备 |
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JP2005063478A JP2006004907A (ja) | 2004-05-18 | 2005-03-08 | エレクトロルミネッセンス装置及び電子機器 |
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US (1) | US20050258441A1 (ja) |
JP (1) | JP2006004907A (ja) |
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Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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KR100839754B1 (ko) | 2007-08-14 | 2008-06-19 | 삼성에스디아이 주식회사 | 유기 전계 발광 표시 장치 및 이의 제조 방법 |
KR100839750B1 (ko) | 2007-01-15 | 2008-06-19 | 삼성에스디아이 주식회사 | 유기 전계 발광 표시 장치 |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6825501B2 (en) | 1997-08-29 | 2004-11-30 | Cree, Inc. | Robust Group III light emitting diode for high reliability in standard packaging applications |
TW505685B (en) * | 1997-09-05 | 2002-10-11 | Mitsubishi Materials Corp | Transparent conductive film and composition for forming same |
TW525305B (en) | 2000-02-22 | 2003-03-21 | Semiconductor Energy Lab | Self-light-emitting device and method of manufacturing the same |
JP2002372928A (ja) * | 2001-06-13 | 2002-12-26 | Sony Corp | タイリング型表示装置及びその製造方法 |
KR100464864B1 (ko) * | 2002-04-25 | 2005-01-06 | 엘지.필립스 엘시디 주식회사 | 유기전계발광 소자 및 그의 제조방법 |
KR100477745B1 (ko) * | 2002-05-23 | 2005-03-18 | 삼성에스디아이 주식회사 | 유기 전계발광 소자의 봉지방법 및 이를 이용하는 유기전계발광 패널 |
JP2004140267A (ja) | 2002-10-18 | 2004-05-13 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
KR100460210B1 (ko) * | 2002-10-29 | 2004-12-04 | 엘지.필립스 엘시디 주식회사 | 듀얼패널타입 유기전계발광 소자 및 그의 제조방법 |
-
2005
- 2005-03-08 JP JP2005063478A patent/JP2006004907A/ja not_active Withdrawn
- 2005-04-21 KR KR1020050032956A patent/KR100768905B1/ko active IP Right Grant
- 2005-05-03 US US11/119,729 patent/US20050258441A1/en not_active Abandoned
- 2005-05-09 TW TW094114915A patent/TW200607384A/zh unknown
- 2005-05-18 CN CN200510071318XA patent/CN1700823B/zh active Active
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CN1700823B (zh) | 2011-07-27 |
US20050258441A1 (en) | 2005-11-24 |
KR20060047301A (ko) | 2006-05-18 |
KR100768905B1 (ko) | 2007-10-22 |
TW200607384A (en) | 2006-02-16 |
CN1700823A (zh) | 2005-11-23 |
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