TWI662150B - 可移除的基板托盤和組件以及包含該基板托盤和組件的反應器 - Google Patents

可移除的基板托盤和組件以及包含該基板托盤和組件的反應器 Download PDF

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TWI662150B
TWI662150B TW104107888A TW104107888A TWI662150B TW I662150 B TWI662150 B TW I662150B TW 104107888 A TW104107888 A TW 104107888A TW 104107888 A TW104107888 A TW 104107888A TW I662150 B TWI662150 B TW I662150B
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base
substrate tray
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艾瑞克 希爾
約翰 托勒
馬修 古德曼
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荷蘭商Ａｓｍ智慧財產控股公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45504—Laminar flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
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Abstract

本發明揭示一種基板托盤、一種包含一基板托盤之基座組件以及一種包含一基板托盤及/或基座組件之反應器。該基板托盤經組態以在處理期間保持一基板且其可由一實質上非反應性材料形成。該基板托盤可被由另一材料形成之一基座收納以形成該基座組件。

Description

可移除的基板托盤和組件以及包含該基板托盤和組件的反應器
本發明大體上係關於氣相反應器及系統。更特定而言，本發明係關於用於保持氣相反應器內之一或多個基板的基板托盤、包含托盤之組件及包含托盤及組件之反應器及系統。
諸如化學氣相沈積(CVD)、電漿增強CVD(PECVD)、原子層沈積(ALD)及其類似者之氣相反應器可用於多種應用，包含在基板表面上沈積及蝕刻材料。圖1說明典型氣相反應器系統100，其包含反應器102(包含反應室104、用以在處理期間固持基板130之基座106、用以將一或多個反應物分佈至基板130之表面的氣體分佈系統108)、經由管線116至120流體耦接至反應室104的一或多個反應物源110、112及(視情況)運載及/或沖洗氣體源114及閥或控制器122至126。系統100亦包含真空源128。
在典型氣相反應器中，基板130直接放置於基座106之頂部上，或為促進移除基板130，基板130可置放於自基座106延伸之頂桿或其他突起部頂部上。兩方法皆具有對應缺點。
無論基板130係直接置放於基座106頂部上還是置放於基座 之表面上的頂桿頂部上，歸因於自基板之頂表面至基座之頂表面的高度改變，可在基板之邊緣周圍破壞自氣體分佈系統108通過增壓室132且至真空源128之氣流(例如，層狀氣流)。
另外，基座傾向於由單一材料形成。使用單一材料具有益處(諸如，易於製造)但亦具有缺點。舉例而言，基座可由諸如鋁之金屬形成，鋁易於機器加工、展現高導熱性且相對便宜。然而，諸如鋁之金屬可在基板上產生污染物且可易受腐蝕(尤其在蝕刻或清潔製程期間)。可較不易受腐蝕之其他材料(諸如，碳化矽)亦可用於形成基座106。然而，碳化矽相對昂貴、相對脆性且相對昂貴以進行機器加工。
如上文所提到，基座106可包含其上置放基板之頂桿或其他突起部。突起部可促進移除可由於(例如)基板130與基座106之間的高靜摩擦而以其他方式黏著至基座106之基板。然而，使用此等突起部允許在基板130之底表面上進行沈積及/或蝕刻，此情況可帶來各種問題。另外，相比於當基板130直接接觸基座106之頂表面時可獲得的傳熱，藉由使用頂桿抑制基座106與基板130之間的傳熱。結果，橫跨基板130之表面的沈積及蝕刻速率之不均勻性可隨著頂桿使用而增加。另外，突起部可導致損害基板之底表面。因此，用於保持氣相反應器中之基板的經改良裝置、組件及反應器係所要的。
本發明之各種實施方式係關於基板托盤、包含該等托盤之基座組件以及包含該等基板托盤及/或組件之氣相反應器。雖然下文較詳細論述本發明之各種實施方式解決現有基座及反應器之缺點的方式，但大體而 言，本發明之各種實施方式提供可將熱量分佈至一基板之一表面以及包含該基板托盤之基座組件及反應器的由相對非反應性材料形成之一可替換基板托盤。另外，若(例如)出現污染問題，則本文中所描述之該等基板托盤允許相對容易之替換。例示性基板托盤及基座組件亦可減少製造成本且可減少更換次數，此情況允許一處理工具之較快開發迭代。
根據本發明之例示性實施方式，一種基板托盤由一非金屬形成且其在一氣相反應室環境中相對非反應性。根據例示性態樣，該基板托盤包含：一主體，其包括諸如一非金屬之一相對非反應性材料，諸如選自由氧化鋁、氮化硼及碳化矽組成的群組中之一或多者的一材料；及形成於該主體之一頂表面內的一凹部，該凹部具有實質上等於一基板之一深度的一深度及用於收納一基板之一凹部表面。根據進一步態樣，該凹部表面包含相對平滑(例如，0.4μm或0.4μm以下0.25μm或0.25μm以下之平均粗糙度)以緩解與一基板之一底表面的反應物反應之至少一部分。該整個凹部表面可係平滑的或其一部分可係平滑的(例如，該凹部表面之一外周邊)。根據進一步態樣，該凹部表面係相對平坦的(例如，約25μm)。該基板托盤亦可包含一底表面上之一或多個凹部以促進在一基座上對準該基板托盤及/或自該基座收納推送頂桿以促進自該基座移除該基板。該基座可包括選自由氧化鋁、氮化硼及碳化矽及其組合組成的群組之一材料、基本上由該材料組成或由該材料組成。替代性地，該基座可包含塗佈有氧化鋁、氮化硼及碳化矽中之一或多者的材料。作為特定實例，該主體可由碳化矽組成，其可包含經燒結碳化矽、使用化學氣相沈積所形成碳化矽或塗佈有使用化學氣相沈積所沈積碳化矽之經燒結碳化矽。該凹部可經組態以 收納(例如)諸如一半導體晶圓之一圓柱形基板。在此狀況下，該凹部可實質上為圓柱形且在直徑或其他橫截面量測上較大的略微較大(例如，大於0mm且小於5mm、約0.5mm至約5mm、約1mm至約4mm或約2mm)。根據此等實施方式之再進一步態樣，該基板托盤之一厚度相對較小以促進通過該基板托盤之傳熱。作為實例，該基板托盤可小於5mm厚、介於一基板之一厚度與約5mm厚之間、厚度介於約2mm與4.5mm之間、厚度介於3mm與4mm之間或約3.5mm厚。該基板托盤可包含頂部及/或底部處之圓化邊緣以促進自該托盤移除該基板並將該基板嵌入至該托盤及/或自該基座內之該凹部移除該基板托盤並將該基板托盤嵌入至該凹部。另外或替代性地，該基板托盤可包含一周邊(諸如，一邊緣或一側壁)上之一或多個特徵(諸如，一凹口)以促進自一基座移除該托盤。
根據進一步例示性實施方式，一種基座組件包含一基板托盤(諸如，如本文中所描述之一基板托盤)及一基座。根據此等實施方式之各種態樣，該基板托盤由一第一材料形成且該基座由一第二材料形成。舉例而言，該基座可由亦可具有一相對較高導熱性的相對便宜且易於製造，但若直接接觸該基板置放，則其可係反應性的或可以其他方式染污一基板表面之一材料(諸如，鋁)形成。該基座可由(例如)具有較低導熱性但具有較低反應性及/或較不易於在一基板之一表面上沈積或形成污染的材料(諸如，上文所提到之該等材料)形成。該組件可經組態以藉由(例如)在該基座中形成一凹部及在該基板托盤內形成一凹部而促進橫跨該基板之一整個表面的層流，其中該凹部之一深度大約為該基板托盤之一高度，其中該基板托盤內之凹部的一深度實質上等於一基板之該高度。
根據本發明之再其他實施方式，一種氣相反應器包含一反應室、一基座(諸如，如本文中所描述之一基座)及一基板托盤(諸如，如本文中所描述之一基板托盤)。該氣相反應器亦可包含耦接至該反應室之一真空源及/或一或多個反應物源。
100‧‧‧典型氣相反應器系統
102‧‧‧反應器
104‧‧‧反應室
106‧‧‧基座
108‧‧‧氣體分佈系統
110、112‧‧‧反應物源
114‧‧‧運載/沖洗氣體源
116-120‧‧‧管線
122-126‧‧‧閥/控制器
128‧‧‧真空源
130‧‧‧基板
132‧‧‧增壓室
200‧‧‧基板托盤
202‧‧‧主體
204‧‧‧凹部
206‧‧‧頂表面
208‧‧‧凹部表面
210‧‧‧凹部
212‧‧‧凹部
214‧‧‧底表面
300‧‧‧基座組件
302‧‧‧基座
304‧‧‧基板托盤
306‧‧‧基板
308‧‧‧凹部
310‧‧‧基板托盤
312‧‧‧基座之表面
400‧‧‧反應器
402、404‧‧‧溫度量測裝置
408‧‧‧反應室
410‧‧‧通道
412‧‧‧排氣增壓室
414‧‧‧氣體分佈系統
416、418‧‧‧真空源
502‧‧‧開口
504‧‧‧頂桿
藉由參看實施方式及申請專利範圍，當結合以下說明性諸圖考慮時，可得到對本發明之例示性實施方式的更完全理解。
圖1說明現有技術氣相反應器系統。
圖2(a)至圖2(e)說明根據本發明之例示性實施方式的基板托盤。
圖3說明根據本發明之額外例示性實施方式的基座組件之一部分。
圖4及圖5說明根據本發明之進一步例示性實施方式的包含基座組件之反應器。
將瞭解，諸圖中之元件係為簡單及清楚起見而說明且未必已按比例繪製。舉例而言，諸圖中之一些元件的尺寸可相對於其他元件放大以有助於改良對所說明之本發明實施方式的理解。
下文所提供的對基板托盤、基座組件及反應器之例示性實施方式的描述僅僅係例示性的且僅意欲用於說明目的；以下描述並不意欲限制本發明或申請專利範圍之範圍。此外，具有所陳述特徵之多個實施方式的敍述並不意欲排除具有額外特徵之其他實施方式或併有所陳述特徵之不 同組合的其他實施方式。
本發明大體上係關於基板托盤、包含基板托盤之基座組件以及包含基板托盤及/或組件之氣相反應器。如下文更詳細地闡述，如本文中所描述之基板托盤可用於在氣相反應器中處理基板(諸如，半導體晶圓)。使用基板托盤及包含托盤之組件係有利的，此係因為托盤可由相對較小量之相對非反應物材料形成，使得仍可獲得自基座至基板之所要傳熱。例示性基板托盤可係可移除或可替換的，使得(例如)若受損或斷裂、若出現污染問題及/或出於製程開發可移除基板托盤以進行清洗或替換。另外或替代性地，基板托盤可係可互換的以促進使用具有具各種大小之基板的基座，同時仍促進橫跨基板之整個表面的反應物層流。
圖2(a)至圖2(e)說明根據本發明之例示性實施方式的例示性基板托盤200。圖2(a)說明基板托盤200之俯視平面圖。圖2(b)說明基板托盤200之仰視平面圖。圖2(c)說明基板托盤200之側視圖。圖2(d)說明基板托盤200之邊緣的特寫橫截面圖。且，圖2(e)說明基板托盤200之對準凹部的特寫圖。
如下文較詳細論述，基板托盤200經組態以擬合於基座之凹部內以形成基座組件之部分。相比單式或單片基座之使用，使用基座托盤係有利的，此係因為其允許基座托盤由相比於用於形成基座之第一材料的不同(第二)材料形成，該不同材料為本發明之組件提供優於現有技術組件之優勢。
基板托盤200包含其中形成有凹部204之主體202。根據本發明之各種實施方式，主體202由諸如非金屬材料之相對非反應性材料形 成。適於主體202之例示性材料包含氧化物及氮化物，包含由氧化鋁、氮化硼及碳化矽組成的群組中之一或多者。主體202可包括此等材料、基本上由此等材料組成或由此等材料組成。作為特定實例，主體202包含碳化矽。在此等狀況下，主體202可由經燒結碳化矽、使用氣相處理(諸如，化學氣相沈積)所形成之碳化矽或塗佈有碳化矽之氣相沈積(例如，CVD沈積)的經燒結碳化矽形成。
主體202之厚度可根據待使用基板托盤200處理之基板而變化。作為實例，圖2(c)中指示為「H」之厚度可在大於0mm至小於5mm之範圍內變化、厚度介於約2mm與4.5mm之間、厚度介於3mm與4mm之間或約3.5mm厚。
凹部204形成於主體之頂表面206內。凹部204經組態以在處理期間將基板306保持於適當位置。根據本發明之各種實施方式，凹部204具有實質上等於基板之高度的深度(圖2(d)中說明為「D」)。凹部204亦包含用於收納基板之凹部表面208。根據進一步態樣，凹部表面208包含相對平滑(例如，0.4μm或0.4μm以下或0.25μm或0.25μm以下之平均粗糙度)以緩解與基板之底表面的反應物反應之至少一部分。整個凹部表面可係平滑的或其部分可係平滑的(例如，凹部表面之外周邊)。作為實例，整個凹部表面之至少一部分相對平滑且具有0.4μm或0.4μm以下或0.25μm或0.25μm以下之平均粗糙度。另外或替代性地，凹部表面208可相對平坦(例如，25μm或25μm以下)。
凹部204可經塑形，使得凹部204之周邊實質上遵循基板之周邊。作為實例，當基板大致為圓柱體(例如，晶圓)時，凹部204可具 有扁圓柱體之形狀，其具有實質上等於基板高度之高度及在直徑或其他橫截面量測上較大的略微較大直徑(例如，大於0mm且小於5mm、約0.5mm至約5mm、約1mm至約4mm或約2mm)。
參考圖2(b)，基板托盤200包含形成於主體202之底表面214內的一或多個凹部210，其中形成於主體之底表面214內的一或多個凹部210可用於促進基板托盤在基座上之對準。圖2(e)說明適於對準之例示性凹部210的特寫圖。在所說明之實例中，凹部210並不延伸通過主體202之厚度H且為具有約3.3mm之半徑(r)及約4.3mm之長軸的細長孔。
基板托盤200亦可包含可為通孔之凹部212。凹部212可(例如)自基座收納自基座推送基板之推送頂桿以藉此克服將基板保持至凹部表面208之力及/或以其他方式促進自凹部表面208轉移基板(例如，使用自動化設備)。另外或替代性地，凹部212可用於在基座上對準基板托盤200。
圖3說明基座組件300之一部分且圖4及圖5說明包含基座組件300之反應器400。組件300包含基座302及基板托盤304。
基座302經組態以在處理期間(諸如，沈積或蝕刻製程期間)將基板306收納並保持於適當位置。例示性基座302包含用以收納基板托盤304之凹部308，使得基板托盤310之頂表面與基座之頂表面312實質上共平面。此情況允許實質上橫跨基板托盤310之表面及基座之表面312的層流。如本文中所使用，除非另外提到，否則「實質上」包含加上或減去10%或加上或減去5%之值。基座302亦可包含溫度量測裝置402、404及或加熱及/或冷卻元件(未說明)。使用加熱元件允許反應器400以冷壁/熱基板模式進行操作以減少反應室之壁上的不當沈積或蝕刻。
根據本發明之各種實施方式，凹部308略微大於基板托盤304。作為實例，凹部308之直徑或類似橫截面大於0mm且小於5mm，約0.5mm至約5mm、約1mm至約4mm或比基板托盤304之直徑或類似橫截面大約2mm。凹部308可為實質上相同於基板托盤304之形狀。作為實例，凹部308實質上為圓柱體。
基座302可由多種材料形成。基座302可有利地由相對易於機器加工且亦具有高導熱性之材料(諸如，鋁、鎳包鋁、鎳及鎳合金)形成。
基板托盤304可相同或類似於基板托盤200。如上文所提到，基板托盤200可經組態，使得當基板置放於凹部204內時，基板之頂部與頂表面206實質上共平面。因此，組件300可經組態，使得基座之頂表面312與基板306之頂表面實質上共平面。
根據本發明之各種實例，基座302固定地附接至反應器400且並不相對於反應室408移動以收納或允許移除基板306。實情為，可通過反應器400之側壁中的開口502將基板裝載至基座組件300上或自其移除基板。相比於類似反應器，此情況允許反應器400之簡化較不昂貴設計。
基座組件300亦可包含由(例如)非金屬(諸如，氧化物或氮化物(例如，碳化矽))形成之起模頂桿及/或由相同或類似材料形成之一或多個對準頂桿(諸如，頂桿504)。
現在參考圖4及圖5，反應器400可為任何合適之氣相反應器。舉例而言，反應器400可為化學氣相沈積(CVD)反應器、電漿增強CVD(PECVD)反應器、原子層沈積(ALD)反應器、磊晶反應器或其類 似者。作為實例，反應器400為蝕刻反應器。
反應器400包含反應室408、基座組件300、通道410及排氣增壓室412。在所說明之實例中，反應器400亦包含氣體分佈系統414(諸如，簇射頭或交叉流氣體分佈系統)。適於與組件300及基板托盤200一起使用之例示性反應器描述於2014年3月19日申請的標題為「具有排氣增壓室之氣相反應器及系統以及其部件(GAS-PHASE REACTOR AND SYSTEM HAVING EXHAUST PLENUM AND COMPONENTS THEREOF)」之第14/219,839號申請案中，在此等內容並不衝突本發明的意義下，該申請案之內容以引用的方式併入本文中。
根據本發明之再進一步例示性實施方式的系統包含諸如反應器400之反應器、諸如真空源416或418之真空源及諸如上文結合圖1所描述之源110、112的一或多個反應物源。
儘管本發明之例示性實施方式闡述於本文中，但應瞭解本發明並非如此受限。舉例而言，儘管結合各種特定組態描述基板托盤、基座組件及反應器，但本發明未必限於此等實例。可在不脫離本發明之精神及範圍的情況下對闡述於本文中之系統及方法作出各種修改、變化及增強。
本發明之標的物包含本文中所揭示之各種反應器、系統、部件及組態，及其他特徵、功能、動作及/或性質，以及其任何及所有等效物的所有新穎且非顯而易見組合及子組合。

Claims (20)

  1. 一種基板托盤，其包括：一主體，其包括一頂表面和一凹部表面，且該主體包括選自由氧化鋁、氮化硼及碳化矽組成的群組中之一或多者的一材料；及一凹部，其形成於該主體內，該凹部具有一深度，該深度位於該頂表面和凹部表面之間且實質上等於一基板之一深度，其中該凹部表面之形狀大致上相似該基板並且插入於基板和基座之間，其中該凹部表面接收該基板且該基板接觸該凹部表面，其中該凹部表面跨越該凹部以支撐該基板的一底表面，以及其中凹部表面包括一個或多個通孔。
  2. 如申請專利範圍第1項之基板托盤，其中該一個或多個通孔促進在該基座上對準該基板托盤。
  3. 如申請專利範圍第1項之基板托盤，其中該凹部表面之一平均表面粗糙度小於或等於0.4μm。
  4. 如申請專利範圍第1項之基板托盤，其中該凹部表面之一平均表面粗糙度小於或等於0.25μm。
  5. 如申請專利範圍第1項至第4項中任一項之基板托盤，其中該主體塗佈有選自由氧化鋁、氮化硼及碳化矽組成的群組之一材料。
  6. 如申請專利範圍第1項至第4項中任一項之基板托盤，其中該凹部之一形狀實質上包括具有一直徑之一圓柱體。
  7. 如申請專利範圍第1項至第4項中任一項之基板托盤，其中該主體包括碳化矽。
  8. 如申請專利範圍第1項至第4項中任一項之基板托盤，其中該主體之一厚度小於或等於5mm。
  9. 一種基座組件，其包括：一基座，其包括一第一材料，該基座具有一第一凹部；及一基板托盤，其包括一第二材料且具有一第二凹部，該基板托盤在該第一凹部內，使得該基板托盤之一頂表面與該基座之一頂表面實質上共平面，且該第二凹部包括一凹部表面，其中該凹部表面跨越該凹部以支撐該基板的一底表面，並且插入於基板和基座之間，其中該凹部表面具有25μm或更小的平坦度，以及其中該凹部表面包括一個或多個通孔。
  10. 如申請專利範圍第9項之基座組件，其中該第一材料係選自由鋁、鎳包鋁、鎳及鎳合金組成的群組。
  11. 如申請專利範圍第9項之基座組件，其中該第二材料係選自由氧化鋁、氮化硼及碳化矽組成的群組。
  12. 如申請專利範圍第9項之基座組件，其中該凹部表面之一平均表面粗糙度小於或等於0.4μm。
  13. 如申請專利範圍第9項之基座組件，其中該凹部表面之一平均表面粗糙度小於或等於0.25μm。
  14. 如申請專利範圍第9項之基座組件，其中該第二凹部包括實質上等於該基板托盤之一高度的一高度。
  15. 如申請專利範圍第9項至第14項中任一項之基座組件，其進一步包括一或多個對準頂桿，其中該一或多個對準頂桿由該基座之一頂部及該一個或多個通孔收納。
  16. 如申請專利範圍第9項至第14項中任一項之基座組件，其進一步包括一或多個起模頂桿，其中該等起模頂桿自該基座之一頂表面突起並由該一個或多個通孔收納。
  17. 如申請專利範圍第9項至第14項中任一項之基座組件，其中該第一材料包括碳化矽。
  18. 一種氣相反應器，其包括：一反應器，其包括一反應室；一基座，其包括一第一材料，該基座具有一第一凹部；及一基板托盤，其包括一第二材料且具有一第二凹部，該基板托盤在該第一凹部內，使得該基板托盤之一頂表面與該基座之一頂表面實質上共平面，且該第二凹部包括一凹部表面，該凹部表面的形狀大致上相似一基板，並且跨越該凹部以支撐該基板的一底表面，該凹部表面包括一個或多個通孔。
  19. 如申請專利範圍第18項之氣相反應器，其進一步包括耦接至該反應室之一真空源。
  20. 如申請專利範圍第18項至第19項中任一項之氣相反應器，其進一步包括耦接至該反應室之一或多個反應物源。
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