TWI486479B - 以最高密度配置於基板座上之複數基板之塗佈裝置 - Google Patents

以最高密度配置於基板座上之複數基板之塗佈裝置 Download PDF

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TWI486479B
TWI486479B TW097119018A TW97119018A TWI486479B TW I486479 B TWI486479 B TW I486479B TW 097119018 A TW097119018 A TW 097119018A TW 97119018 A TW97119018 A TW 97119018A TW I486479 B TWI486479 B TW I486479B
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substrate
substrate holder
coating device
substrates
bearing surface
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TW200902752A (en
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Robert Boyd Adam
Saywell Victor
Mulder Jan
Feron Olivier
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Aixtron Ag
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate

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Description

以最高密度配置於基板座上之複數基板之塗佈裝置
本發明係有關一種反應室中基板座承載面上方複數個基板之塗佈裝置，該承載面構成使每一基板邊緣抵靠之抵靠邊。
US 5,814,196提出一種塗佈裝置，其將基板放置在凹槽中，凹槽的外緣配合基板之平面輪廓。凹槽底部構成基板之承載面。基板中心點位在等邊三角形的角點上。
US 2003/0109139 A1提出一種拋光基板之裝置，其將三個基板行星式放置於一基板座上。
DE 10 2004 009 130 A1提出一種反應室中基板座承載面上方複數個基板之塗佈裝置，其承載面構成使每一基板邊緣抵靠之抵靠邊。基板被放置在六個旋轉盤上，該旋轉盤被環繞基板座中心排列成多邊形。
DE 100 43 600 A1提出一種類似之裝置。
習知複數基板之塗佈裝置皆使基板環繞基板座中心排列。第一圈例如有四個基板，其環繞基板座中心均勻分佈。該基板各被容置於基板座表面一凹槽中，各凹槽之中心點位在一圓形線上。第二圈例如有十個基板，其同樣各被容置於一凹槽中。第三圈例如有十六個基板，其同樣各被容置於一凹槽中，該凹槽之中心點與基板座中心點等距。
此種基板座上之基板排列方式有其優點。基板座承載面 上方為一反應室，反應氣體由上方經一進氣機構而被輸入反應室中。反應氣體在氣相或基板表面反應。反應氣體之元素於是沈積於基板上而構成一薄膜。此處基板座通常被由下方加熱。
基板座各凹槽之間的縫隙需避免出現寄生成長。該寄生成長不僅會使氣相貧化，亦會對沈積薄膜的均勻度產生不利影響。
本發明之目的在於改良上述之裝置。
本目的由申請專利範圍所述之本發明達成，其中每一項申請專利範圍皆可獨立及與其他項申請專利範圍組合。
依據本發明，基板之間的基板座自由表面被最小化。基板邊緣抵靠的抵靠邊由突伸出承載面的定位件側壁構成。此處有利的是，使定位件位在一蜂窩狀結構的角點上。定位件可彼此有一距離，使得相鄰基板之邊緣彼此接觸或幾乎接觸。在一較佳實施例中，定位件邊緣配合基板邊緣。由於基板通常為圓形，故定位件具向內彎曲之側壁。定位件的角點位在一等邊三角形的角點上，故定位件之平面輪廓基本上與一個具有向內彎曲之邊的等邊三角形一致。定位件較佳由反應室基板座之凹槽底部凸起。尚為有利的是，使定位件材料不同於基板座材料。基板座通常由石墨或一金屬製成，但亦可由石英製成。此定位件可設作插置件，而插入承載面之插孔中。尤其是使定位件以與基板相同之材料製成，亦即藍寶石或一半導體材料。定 位件表面之物理及化學特性於是與基板表面一致。定位件高度基本上等於基板材料厚度。由於基板邊緣與定位件彎曲側壁接觸，故基板座表面只有一小部份與基板之物理及化學特性不同。因此可提升薄膜均勻度。在本發明另一設計中，基板如先前技術各被容置在一凹槽中。各凹槽之中心點位在等邊三角形所構成格體的角點上。格體常數，亦即角點的距離只略大於基板直徑。此處各凹槽亦構成一圓形承載面以配合基板。各三角形角點的中心設有一三角形定位件，其具向內彎曲之側壁。該側壁構成一橋接部而與相鄰之定位件連接。此處基板座不被基板覆蓋之自由表面亦被最小化。
以下將依據附圖詳細說明本發明。
圖7顯示一種對置於基板座1上方之複數個基板3進行塗佈之裝置的反應器殼體內部。該基板座1基本上由石墨製成，具一水平圓形表面，其構成複數個基板之承載面2。基板座1直徑可達40cm，並可對一旋轉軸A旋轉。
基板座1上方為反應室14，其上方鄰接一進氣機構15下側。進氣機構15具朝下之開孔，其蓮蓬頭狀分佈在進氣機構整個朝下的氣體流出面上，一或數種反應氣體可由該開孔流入反應室14中，而在氣相或被基板座1下方的加熱裝置加熱而在基板表面產生反應。反應氣體含第四族或第三及五族或第二及六族元素，其可為氯化物、氫化物或金屬有機化合物，其經進氣機構而被輸入反應室14 中。上述第二至六族元素凝結而在基板座1上方的基板3表面生成一層晶體薄膜。為使基板3上薄膜的成長為最佳，本發明使基板3以最高密度配置在基板座1上。此處選擇一種六邊形排列方式。如圖2至6所示，基板3中心點10位在一格體的角點上，格體的每一格皆為一等邊三角形。圖6顯示格體之輔助線11，其連接容置基板3之各凹槽12的中心點10。圖2顯示一蜂窩狀結構。由於基板3之多邊形排列，故基板座1未被基板3覆蓋的表面被最小化。
在圖1至4所示第一實施例中，基板座1水平上側設有一個唯一的凹槽，其構成承載面2。承載面2外緣暨凹槽外緣16配合所容置基板之圓弧邊緣8。
承載面2內設有由底部凸起之定位件4。如圖2輔助線7所示，該定位件4之中心點6位在多邊形格體，亦即蜂窩形格體，的角點上。每一格體放置一基板3。定位件4的角點位在一等邊三角形的角點上，定位件4的各邊5為一向內彎曲之線。定位件4各邊構成抵靠邊5，每一基板3的邊緣8抵靠六個定位件4。
兩相鄰定位件4朝向彼此的角點之間有一空隙，基板邊緣8可伸入該縫隙，故兩相鄰基板3的邊緣8可彼此接觸，或彼此只具百分之數毫米的距離。故基板座1自由表面由楔形定位件4表面構成。定位件4彼此之距離約等於定位件4寬側的長度。圖1及2中基板3各被定位在六個定位件4所構成的容置空間中。如基板3偏心時，邊緣8 會超出兩相鄰定位件4角點連接線。
如圖4所示，定位件4在第一實施例中與基板座1材料連接。基板座可由石墨、金屬或石英構成。定位件4為承載基板3之承載面2的凸起。定位件4的高度基本上等於基板3材料厚度。
圖5顯示一第二實施例，其中定位件4之平面輪廓與圖1至圖3者一致。但在該實施例中定位件4為插置件，其不與基板座1材料連接。構成定位件4之插置件被插入承載面2的插孔9中。此處定位件4在承載面2上的高度亦等於基板3材料厚度。在該實施例中，定位件4可由與基板3相同之材料製成。基板座1在凹槽外緣16內的表面幾乎只由具一致化學及物理化學特性的定位件表面及基板表面構成。如此而提高了沈積薄膜之均勻度。
圖6顯示第三實施例，其中基板3各被容置於一凹槽12中。如上所述，各凹槽12之中心點10位在一格體之角點上，該格體之格子為等邊三角形。三角形邊長只略大於基板3或凹槽12直徑。此處在每三個相鄰的凹槽12中各有一個定位件4。兩相鄰定位件4以一橋接部13彼此連接。橋接部13由一收縮部構成。該收縮部，亦即橋接部13，最小寬度基本上等於基板3材料厚度或包圍基板3之定位件4高度。
本案所有揭示特徵本身皆具有發明性質。本發明揭示之特徵完全包含於本案之申請專利範圍中。
1‧‧‧基板座
2‧‧‧承載面
3‧‧‧基板
4‧‧‧定位件
5‧‧‧抵靠邊，側壁
6‧‧‧定位件中心點
7‧‧‧輔助線
8‧‧‧邊緣
9‧‧‧插孔
10‧‧‧基板中心點
11‧‧‧輔助線
12‧‧‧凹槽
13‧‧‧橋接部
14‧‧‧反應室
15‧‧‧進氣機構
16‧‧‧外緣
圖1係本發明第一實施例基板座承載面之俯視圖，其為展示之故而只顯示部份承載基板3。
圖2係如圖1所示之基板座承載面之俯視圖，其中三角形定位件4中心點彼此以輔助線7連接，以顯示蜂窩形結構。
圖3係圖1中線III－III之部份放大圖。
圖4係圖3中線IV－IV之剖面圖。
圖5係本發明第二實施例基板座承載面類似於圖4之部份剖視圖。
圖6係本發明第三實施例基板座承載面類似於圖1之俯視圖。
圖7係本發明裝置的反應器殼體內部示意圖。
1‧‧‧基板座
2‧‧‧承載面
3‧‧‧基板
4‧‧‧定位件
5‧‧‧抵靠邊，側壁
8‧‧‧邊緣
16‧‧‧外緣

Claims (6)

  1. 一種反應室(14)中基板座(1)承載面(2)上方複數個基板(3)之塗佈裝置，該承載面(2)構成使每一基板(3)邊緣抵靠之抵靠邊(5)，其特徵為：抵靠邊(5)由突伸出承載面(2)的數個定位件(4)之側壁(5)構成，諸定位件(4)彼此有一距離，位在一蜂窩狀結構的角點(10)上，且其平面輪廓基本上與一個具有向內彎曲的邊(5)的等邊三角形一致，該等向內彎曲的邊係依循著基板(3)之邊緣(8)，而諸基板(3)則係以使相鄰基板(3)可彼此接觸的方式承載於各個承載面(2)上；以及該等定位件(4)係彼此隔開成使得相鄰基板(3)之邊緣(8)彼此接觸或幾乎接觸，而讓諸定位件(4)和承載面(2)位於基板座(1)之相同一側上。
  2. 如申請專利範圍第1項之塗佈裝置，其中，定位件(4)為插置件，其被插入承載面(2)之插孔(9)中。
  3. 如申請專利範圍第2項之塗佈裝置，其中，插置件以與基板(3)相同之材料製成，尤其是藍寶石或半導體材料。
  4. 如申請專利範圍第1至3項中任一項之塗佈裝置，其中，基板座(1)由石墨或金屬或石英製成。
  5. 如申請專利範圍第1至3項中任一項之塗佈裝置，其中，抵靠邊(5)高度基本上等於基板(3)材料厚度。
  6. 如申請專利範圍第1至3項中任一項之塗佈裝置，其中，基板座(1)上方為反應室(14)，其上方鄰接一進氣機構(15)下側，該進氣機構具朝下之開孔，其蓮蓬頭狀分佈 在進氣機構(15)整個朝下的氣體流出面上，一或數種反應氣體可由該開孔流入反應室(14)中，而在氣相或被基板座(1)下方的加熱裝置加熱而在基板表面產生反應。
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